UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089

Transcription

1 UNISONIC TECHNOLOGIES CO., LTD MMBT5088/ NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 3 The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from μa to 50mA. 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 2 3 Packing MMBT5088L-AE3-R MMBT5088G-AE3-R SOT-23 B E C Tape Reel L-AE3-R G-AE3-R SOT-23 B E C Tape Reel Note: Pin Assignment: B: Base E: Emitter C: Collector MARKING UTC MMBT5088 UTC Q L: Lead Free G: Halogen Free R L: Lead Free G: Halogen Free of 7 Copyright 204 Unisonic Technologies Co., Ltd

2 MMBT5088/ ABSOLUTE MAXIMUM RATING (T A =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter voltage MMBT V CEO 25 V Collector-Base voltage MMBT V CBO 30 V Emitter-base voltage V EBO 4.5 V Collector current-continuous I C 00 ma Total Device Dissipation 350 mw P D Linear Derating Factor above T A = 25 C 2.8 mw/ C Junction Temperature T J +25 C Operating Temperature T OPR -40 ~ +50 C Storage Temperature T STG -40 ~ +50 C Notes:. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These ratings are based on a maximum junction temperature of 50 degrees C. 3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (T A =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Junction to Ambient JA 357 C/W UNISONIC TECHNOLOGIES CO., Ltd 2 of 7

3 MMBT5088/ ELECTRICAL CHARACTERISTICS (T A =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage MMBT V BV CEO I C =.0mA, I B =0 (Note) 25 V Collector-Base Breakdown Voltage MMBT V BV CBO I C =00 A, I E =0 30 V Collector Cut-Off Current MMBT5088 V CB =20V, I E =0 50 na I CBO V CB =5V, I E =0 50 na Emitter Cutoff Current I EBO V EB =3.0V, I C =0 50 na V EB =4.5V, I C =0 00 na ON CHARACTERISTICS MMBT V CE =5.0V, I C =00 A DC Current Gain MMBT h FE V CE =5.0V, I C =.0mA 450 MMBT5088 V CE =5.0V, 300 I C =0mA(Note) 400 Collector-Emitter Saturation Voltage V CE(SAT) I C =0mA, I B =.0mA 0.5 V Base-Emitter On Voltage V BE(ON) I C =0mA, V CE =5.0V 0.8 V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product f T V CE =5.0mA, I C = A, f=20mhz 50 MHz Collector-Base Capacitance C CB V CB =5.0V, I E =0, f=00khz 4 pf Emitter-Base Capacitance C EB V EB =0.5V, I C =0, f=00khz 0 pf Small-Signal Current Gain MMBT5088 V CE =5.0V, I C =.0mA, h FE f=.0khz MMBT5088 V CE =5.0V, I C =00 A, 3.0 db Noise Figure NF R S =0k, f=0khz ~ 5.7kHz 2.0 db Note: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. UNISONIC TECHNOLOGIES CO., Ltd 3 of 7

4 MMBT5088/ TYPICAL CHARACTERISTICS Typical Pulsed Current Gain, hfe Typical Pulsed Current Gain vs Collector Current 25 C V CE =5.0V 25 C -40 C Collector-Emitter Voltage, VCE(sat) (V) β= Collector-Emitter Saturation Voltage vs. Collector Current 25 C 25 C -40 C Collector-Emitter Voltage, VBE(sat) (V) Base-Emitter ON Voltage, VBE(on) (V) 0 Collector-Cutoff Current vs Ambient Temperature V CB =45V 5 Input and Output Capacitance vs Reverse Bias Voltage f=.0mhz 4 3 C te 2 C ob Ambient Temperature, T A ( ) Reverse Bias Voltage (V) UNISONIC TECHNOLOGIES CO., Ltd 4 of 7

5 MMBT5088/ TYPICAL CHARACTERISTICS (Cont.) 0 Contours of Constant Gain Bandwidth Product (f T ) 75MHz 000 Normalized Collector-Cutoff Current vs Ambient Temperature MHz 2 25MHz 00MHz 75MHz Ambient Temperature, T A (2) C Noise Figure, NF (db) Noise Figure, NF (db) 625 Power Dissipation vs Ambient Temperature 0,000 Contours of Constant Narrow Band Noise Figure 3.0dB Power Dissipation, PD (mw) Temperature ( ) 5, dB 2,000, dB 0dB 200 V CE=5.0V f=00hz Bandwidth=20Hz 00 2dB 4dB 0 00,000 Collector Current, I C (µa) UNISONIC TECHNOLOGIES CO., Ltd 5 of 7

6 MMBT5088/ TYPICAL CHARACTERISTICS (Cont.) 0,000 Contours of Constant Narrow Band Noise Figure 0,000 Contours of Constant Narrow Band Noise Figure 5, dB 2, dB, dB V CE=5.0V 8.0dB 200 f=.0khz Bandwidth=200Hz ,000 Collector Current, I C (µa) 5,000 2,000,000.0dB 2.0dB 3.0dB 4.0dB V CE=5.0V 200 f=0khz Bandwidth=2.0KHz 8.0dB ,000 Collector Current, I C (µa) 5.0dB Characteristics Relative To Value (TA=25 ) Characteristics Relative To Value (VCE=5V) V CE =5.0V f=.0khz I C h=.0ma ce h re Typical Common Emitter Characteristics h ie h ie Junction Temperature, T J ( ) h re Characteristics Relative To Value (IC=mA) 00 0 h ie and h re 0. f=.0khz Typical Common Emitter Characteristics hie h re UNISONIC TECHNOLOGIES CO., Ltd 6 of 7

7 MMBT5088/ UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., Ltd 7 of 7