NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
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1 SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter oltage CEO dc Collector Base oltage CBO 8 5 dc Emitter Base oltage EBO 6. dc Collector Current Continuous IC madc Total Device Derate above 25 C PD mw mw/ C 2 CASE 29 4, STYLE 7 TO 92 (TO 226AA) Total Device TC = 25 C Derate above 25 C PD.5 2 Watt mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 55 to +5 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA C/W Thermal Resistance, Junction to Case R JC 8. C/W ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown oltage ( ma, IB = ) Collector Base Breakdown oltage ( µadc) Emitter Base Breakdown oltage (IE = A, ) Collector Cutoff Current (CE = 7, BE = ) (CE = 5, BE = ) (CE = 5, BE = ) (CE =, TA = 25 C) /547/548 (BR)CEO (BR)CBO 8 5 (BR)EBO ICES na µa RE
2 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) (Continued) ON CHARACTERISTICS DC Current Gain ( µa, CE = 5. ) Characteristic Symbol Min Typ Max Unit A/548A B/547B/548B C hfe ( ma, CE = 5. ) A/548A B/547B/548B C/C ( ma, CE = 5. ) A/548A B/547B/548B C 8 Collector Emitter Saturation oltage ( ma, IB =.5 ma) ( ma, IB = 5. ma) ( ma, IB = See Note ) Base Emitter Saturation oltage ( ma, IB =.5 ma) Base Emitter On oltage ( ma, CE = 5. ) ( ma, CE = 5. ) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product ( ma, CE = 5., f = MHz) Output Capacitance (CB =,, f = MHz) Input Capacitance (EB =.5,, f = MHz) CE(sat).9. 5 BE(sat).7 BE(on) ft MHz Cobo pf Cibo pf Small Signal Current Gain ( ma, CE = 5., f = khz) /548 A/548A B/547B/548B C/548C hfe Noise Figure ( ma, CE = 5., RS = 2 k, f = khz, f = Hz) NF db Note : IB is value for which ma at CE =. 2
3 hfe, NORMALIZED DC CURRENT GAIN.5. CE =, OLTAGE (OLTS) IC/IB = CE = IC/IB = Figure. Normalized DC Current Gain Figure 2. Saturation and On oltages CE, COLLECTOR EMITTER OLTAGE ().6.2 ma ma 5 ma.2. IB, BASE CURRENT (ma) ma ma B, TEMPERATURE COEFFICIENT (m/ C) θ C to +25 C Figure. Collector Saturation Region Figure 4. Base Emitter Temperature Coefficient / C, CAPACITANCE (pf) Cib. Cob R, REERSE OLTAGE (OLTS) f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) CE = Figure 5. Capacitances Figure 6. Current Gain Bandwidth Product
4 / hfe, DC CURRENT GAIN (NORMALIZED).5 CE = 5, OLTAGE (OLTS) IC/IB = CE = 5. IC/IB = Figure 7. DC Current Gain Figure 8. On oltage CE, COLLECTOR EMITTER OLTAGE (OLTS).6.2 ma ma 5 ma ma IB, BASE CURRENT (ma) Figure 9. Collector Saturation Region ma B, TEMPERATURE COEFFICIENT (m/ C) θ.4.8 θb for BE 55 C to 25 C Figure. Base Emitter Temperature Coefficient C, CAPACITANCE (pf) 4 Cib Cob R, REERSE OLTAGE (OLTS) f T, CURRENT GAIN BANDWIDTH PRODUCT 5 5 CE = Figure. Capacitance Figure 2. Current Gain Bandwidth Product 4
5 PACKAGE DIMENSIONS SEATING PLANE R A X X H N F G P N B L K C D J SECTION X X NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH.. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N P R CASE 29 4 (TO 226AA) ISSUE AD STYLE 7: PIN. COLLECTOR 2. BASE. EMITTER 5
COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
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