MCC BC558A/B/C. Features. PNP Silicon Amplifier Transistor 625mW

Size: px
Start display at page:

Download "MCC BC558A/B/C. Features. PNP Silicon Amplifier Transistor 625mW"

Transcription

1 omponents 2736 Marilla Street Chatsworth!"# $%!"# BC556A/B/C BC557A/B/C A/B/C Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 15 o C Junction Temperature Through Hole Package Epoxy meets UL 94 - flammability rating Moisure Sensitivity Level 1 Marking:Type Number Halogen free available upon request by adding suffix "-HF" Mechanical Data Case: TO-92, Molded Plastic Polarity: indicated as below. PNP Silicon Amplifier Transistor 625mW TO-92 A E B Maximum 25 o C Unless Otherwise Specified Charateristic Symbol alue Unit Collector-Emitter oltage BC556 BC557 CEO -45 Collector-Base oltage BC556 BC557 CBO -5 Emitter-Base oltage EBO -5. Collector Current(DC) I C -1 ma Power Dissipation@T A =25 o 625 mw C P d 5. mw/ o C Power Dissipation@T C =25 o 1.5 W C P d 12 mw/ o C Thermal Resistance, Junction to Ambient Air R JA 2 o C/W Thermal Resistance, Junction to Case R JC 83.3 o C/W Operating & Storage Temperature T j,t STG -55~15 o C G D C BE INCHES MM DIM MIN MAX MIN MAX NOTE A B C D E G Straight Lead Bent Lead * For ammo packing detailed specification, click here to visit our website of product packaging for details. C STRAIGHT LEAD BULK PACK DIMENSIONS C B E BENT LEAD AMMO PACK 1 of 5

2 ELECTRICAL CHARACTERISTICS (T a =25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit BC556-8 Collector-base BC557 (BR)CBO I C = -.1mA,I E = -5 breakdown voltage BC Collector-emitter BC557 (BR)CEO I C =-2mA,I B = -45 breakdown voltage Emitter-base breakdown voltage (BR)EBO I E =-1μA,I C = -5 BC556 CB =-7,I E = -.1 μa Collector cut-off current Collector cut-off current I CBO BC557 CB =-45,I E = -.1 μa CB =-25,I E = -.1 μa BC556 CE =-6,I B = -.1 μa I CEO BC557 CE =-4,I B = -.1 μa CE =-25,I B = -.1 μa Emitter cut-off current I EBO EB =-5,I C = -.1 μa * DC current gain h FE CE =-5, I C =-2mA 12 8 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage CE(sat) BE(sat) BE I C =-1mA,I B =-.5mA -.3 I C =-1mA,I B =-5mA -.65 I C =-1mA,I B =-.5mA -.8 I C =-1mA,I B =-5mA -1 CE =-5, I C =-2mA CE =-5, I C =-1mA -.82 Collector output capacitance C ob CB =-1,I E =, f=1mhz 6 pf BC MHz Transition frequency BC557 CE=-5,IC=-1mA, f=1mhz 315 MHz f T 15 MHz CLASSIFICATION of h FE RANK A B C RANGE of 5

3 BC556A thru C MCC BC557/ hfe, NORMALIZED DC CURRENT GAIN CE = 1, OLTAGE (OLTS) IC/IB = 1 CE = 1 IC/IB = Figure 1. Normalized DC Current Gain Figure 2. Saturation and On oltages CE, COLLECTOR EMITTER OLTAGE () IC = 1 ma IC = 2 ma IC = 5 ma IB, BASE CURRENT (ma) IC = 2 ma IC = 1 ma 2 B, TEMPERATURE COEFFICIENT (m/ C) θ C to +125 C Figure 3. Collector Saturation Region Figure 4. Base Emitter Temperature Coefficient C, CAPACITANCE (pf) Cib Cob R, REERSE OLTAGE (OLTS) f, CURRENT GAIN BANDWIDTH PRODUCT (MHz) T CE = 1 Figure 5. Capacitances Figure 6. Current Gain Bandwidth Product 3 of 5

4 BC556A thru C MCC BC556 hfe, DC CURRENT GAIN (NORMALIZED).5.2 CE = 5., OLTAGE (OLTS).6.2 IC/IB = 1 CE = 5. IC/IB = IC, COLLECTOR CURRENT (AMP) Figure 7. DC Current Gain Figure 8. On oltage CE, COLLECTOR EMITTER OLTAGE (OLTS) IC = 1 ma 2 ma 5 ma 1 ma 2 ma IB, BASE CURRENT (ma) 2 B, TEMPERATURE COEFFICIENT (m/ C) θ θb for BE 55 C to 125 C Figure 9. Collector Saturation Region Figure 1. Base Emitter Temperature Coefficient C, CAPACITANCE (pf) 4 2 Cib Cob R, REERSE OLTAGE (OLTS) f T, CURRENT GAIN BANDWIDTH PRODUCT CE = Figure 11. Capacitance Figure 12. Current Gain Bandwidth Product 4 of 5

5 Ordering Information : Device Part Number-AP Part Number-BP Note : Adding "-HF" suffix for halogen free, eg. Part Number-AP-HF Packing Ammo Packing: 2Kpcs/Carton Bulk: 1Kpcs/Carton ***IMPORTANT NOTICE*** Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Corp. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights,nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Corp. and all the companies whose products are represented on our website, harmless against all damages. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 5 of 5 3

MCC. 2N5401 )HDWXUHV. PNP Silicon Amplifier Transistor 625mW 0HFKDQLFDO'DWD TO-92

MCC.  2N5401 )HDWXUHV. PNP Silicon Amplifier Transistor 625mW 0HFKDQLFDO'DWD TO-92 omponents 20736 Marilla Street Chatsworth!"# $%!"# 2N5401 )HDWXUHV Through Hole Package 1 o C Junction Temperature Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)

More information

MCC. BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW. Features. NPN General Purpose Transistors. Maximum Ratings SOT-323

MCC.   BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW. Features. NPN General Purpose Transistors. Maximum Ratings SOT-323 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low current (max. 100mA) Low voltage (max. 65V) Epoxy meets UL 94 V-0 flammability rating Moisure

More information

MCC. MMDT3904V

MCC.   MMDT3904V Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epitaxial Die Construction Ideal for

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

M C C 3EZ5.1D5 THRU 3EZ75D5. Features. 3 W Glass Passivated Junction Silicon Zener Diode Volts. Mechanical Data DO-15

M C C 3EZ5.1D5 THRU 3EZ75D5.   Features. 3 W Glass Passivated Junction Silicon Zener Diode Volts. Mechanical Data DO-15 Features Low Profile Package Glass Passivated Junction Excellent Clamping Capability Lead Free Finish/RoHS Compliant(Note C)("P" Suffix Designates Compliant. See Ordering Information) Halogen free available

More information

M C C. SMCJ1.5KE6.8(C)A THRU SMCJ1.5KE550(C)A. Features. Transient Voltage Suppressor 6.8 to 550 Volts 1500 Watt.

M C C.  SMCJ1.5KE6.8(C)A THRU SMCJ1.5KE550(C)A. Features. Transient Voltage Suppressor 6.8 to 550 Volts 1500 Watt. omponents 20736 Marilla Street Chatsworth!"# $%!"# SMCJ1.5KE6.8(C)A THRU SMCJ1.5KE550(C)A Features For surface mount applicationsin in order tooptimize board space Lead Free Finish/Rohs Compliant (Note1)

More information

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2

More information

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS.  THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

MCC. P6KE6.8 THRU. Features. Maximum Ratings APPLICATION DO WATTS TRANSIENT VOLTAGE SUPPRESSOR 6.

MCC.  P6KE6.8 THRU. Features. Maximum Ratings APPLICATION DO WATTS TRANSIENT VOLTAGE SUPPRESSOR 6. Features Epoxy meets UL 94 V- flammability rating Moisture Sensitivity Level 1 omponents 2736 Marilla Street Chatsworth!"# $%!"# and suffix"c" designates bidirectional type Lead Free Finish/Rohs Compliant

More information

MCC. SS220-L THRU. Features. 2 Amp Schottky Rectifier 20 to 200 Volts DO-214AC (SMA) (LEAD FRAME) Maximum Ratings

MCC.  SS220-L THRU. Features. 2 Amp Schottky Rectifier 20 to 200 Volts DO-214AC (SMA) (LEAD FRAME) Maximum Ratings Features Guard Ring Protection Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) Low Forward High Current Capability Halogen free available upon request

More information

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed

More information

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.

More information

C 2 B 1 E 1 E 2 B 2 C 1. Top View

C 2 B 1 E 1 E 2 B 2 C 1. Top View MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification

More information

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.

More information

omponents Marilla Street Chatsworth nadc Vdc ms

omponents Marilla Street Chatsworth nadc Vdc ms Features Symbol ating ating Unit V DS Drain -source Voltage 60 V V GS Gate -source Voltage ±20 V I D Drain Current 115 ma P D Total Power Dissipation 200 mw JA Thermal esistance Junction to Ambient 625

More information

M C C. Revision: B 2016/10/10 MCQ4503 SOP-8. Features Halogen free available upon request by adding suffix "-HF"

M C C.   Revision: B 2016/10/10 MCQ4503 SOP-8. Features Halogen free available upon request by adding suffix -HF omponents 736 Marilla Street Chatsworth!"# $%!"# MCQ43 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/ohs Compliant ("P"Suffix designates ohs Compliant. See ordering

More information

BC857BTT1G. General Purpose Transistor. PNP Silicon

BC857BTT1G. General Purpose Transistor. PNP Silicon General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.

More information

BC856ALT1G Series. General Purpose Transistors. PNP Silicon

BC856ALT1G Series. General Purpose Transistors. PNP Silicon General Purpose Transistors PNP Silicon Features S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices

More information

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed

More information

BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)

BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features.   MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856

More information

MCC. P6KE6.8 THRU P6KE540(C)A. Features. Maximum Ratings APPLICATION DO WATTS TRANSIENT VOLTAGE SUPPRESSOR 6.

MCC.  P6KE6.8 THRU P6KE540(C)A. Features. Maximum Ratings APPLICATION DO WATTS TRANSIENT VOLTAGE SUPPRESSOR 6. Features omponents 2736 Marilla Street Chatsworth!"# $%!"# Economical series Available in both unidirectional and bidirectionalconstruction and suffix"c" designates bidirectional type Lead Free Finish/Rohs

More information

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. MAXIMUM RATINGS (T A = 25 C unless otherwise noted) MARKING DIAGRAM

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)   MARKING DIAGRAM Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit CollectorEmitter oltage BC856 BC857 BC858, BC859 CollectorBase oltage BC856 BC857

More information

300mW, NPN Small Signal Transistor

300mW, NPN Small Signal Transistor 300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE

More information

DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) Rating Symbol Value Units Collector-Base Voltage. 50 V Collector-Emitter Voltage

DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) Rating Symbol Value Units Collector-Base Voltage. 50 V Collector-Emitter Voltage DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP) general-purpose transistors. This device is ideal for portable applications

More information

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

More information

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES

BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC85-AU SERIES NPN GENERAL PURPOSE TRANSISTORS OLTAGE 3/45/65 olt POWER 33 mwatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design

More information

BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free

BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free -HF Thru. -HF Series (PNP) RoHS Device Halogen Free Features - Ideally suited for automatic insertion - Power dissipation PCM:.25W (@T=25 C) - Low current.(max. 1m) - Collector-base voltage CBO: = -8 =

More information

UNISONIC TECHNOLOGIES CO., LTD MPSA92/93

UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High

More information

BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor

BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor NPN Transistor A/B/C ~ BC550A/B/C FEATURES For switching and AF amplifier applications These types are subdivided into three groups A, B and C according to their current gain Moisture sensitivity level

More information

General Purpose Transistors

General Purpose Transistors General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and

More information

BC846BM3T5G. General Purpose Transistor. NPN Silicon

BC846BM3T5G. General Purpose Transistor. NPN Silicon General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter

More information

BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor

BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications

More information

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS MJE24G (NPN), MJE25G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL

More information

Micro Commercial Components Marilla Street, Chatsworth, CA91311 Tel: Fax: Process Change Notification.

Micro Commercial Components Marilla Street, Chatsworth, CA91311 Tel: Fax: Process Change Notification. M C C 076 Marilla Street, Chatsworth, CA9 Tel:88-70-49 ax:88-70-499 Process Change Notification Jan- st -0 Subject : MCC Process Change Notification#PCN_00 Title: MCC revise the pn# designation for MMBD50A~MMBD505A

More information

MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction

MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector

More information

TO-92 NPN Bipolar Transistor

TO-92 NPN Bipolar Transistor /Y/R/BL FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, R, BL - Pb free and RoHS compliant NPN Bipolar Transistor MECHANICAL DATA - Case: small outline

More information

Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000

Applications Q2 E2. Device Symbol. Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2063E6TA ,000 YM ADVANCE INFORMATION 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features NPN + PNP Combination BV CEO > 40 (-40)V BV ECO > 6 (-3)V M = 9 (-9)A Peak Pulse Current V CE(sat) < 60 (-90)mV @ 1A R

More information

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other

More information

BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector

More information

0.3W, PNP Plastic-Encapsulate Transistor

0.3W, PNP Plastic-Encapsulate Transistor 0.3W, PNP Plastic-Encapsulate Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to

More information

BC846ALT1G Series. General Purpose Transistors. NPN Silicon

BC846ALT1G Series. General Purpose Transistors. NPN Silicon BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: > 4 V ESD Rating Machine Model: > 4 V S and NSV Prefix for Automotive and Other

More information

MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications MJD (NPN) MJD7 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in

More information

M C C. Revision: A 2016/02/07 MCMNP517 DFN2020-6U

M C C.  Revision: A 2016/02/07 MCMNP517 DFN2020-6U omponents 2736 Marilla Street Chatsworth!"# $%!"# MCMNP517 Features Halogen free available upon request by adding suffix "-HF" Super High Density Cell Design for Extremely Low DS(ON) Lead Free Finish/ohs

More information

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector

More information

2N6520 PNP Epitaxial Silicon Transistor

2N6520 PNP Epitaxial Silicon Transistor 2N6520 PNP Epitaxial Silicon Transistor Features High oltage Transistor Collector-Emitter oltage: CBO = -350 Collector Dissipation: P C (max)=625mw Complement to 2N6517 Absolute Maximum Ratings* T A =

More information

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS.  MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase

More information

Device Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000

Device Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000 KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO

More information

KSP44/45 NPN Epitaxial Silicon Transistor

KSP44/45 NPN Epitaxial Silicon Transistor KSP44/45 NPN Epitaxial Silicon Transistor Features High-oltage Transistor Collector-Emitter oltage: CEO = KSP44: KSP45: 350 Collector Power Dissipation: P C (max) = 625mW Ordering Information October 202

More information

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface

More information

NSV1C301ET4G. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS 12.5 WATTS NPN LOW V CE(sat) TRANSISTOR

NSV1C301ET4G. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS 12.5 WATTS NPN LOW V CE(sat) TRANSISTOR NSSC3ET4G, 3. A, Low CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and high current

More information

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2N441 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. ORDERING

More information

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter

More information

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.

More information

300mW, NPN Small Signal Transistor

300mW, NPN Small Signal Transistor 300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High

More information

2N6515, 2N6517, 2N6520. High Voltage Transistors NPN and PNP

2N6515, 2N6517, 2N6520. High Voltage Transistors NPN and PNP 2N6515, 2N6517, 2N65 High Voltage Transistors NPN and PNP Features Voltage and Current are Negative for PNP Transistors PbFree Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N6515 2N6517

More information

ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =

ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO = DUAL 6 NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: CEO =6; I C = ; h FE =1-3 PNP: CEO =-6; I C = -; h FE =1-3 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6

More information

BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage

More information

KSP44 / KSP45 NPN Epitaxial Silicon Transistor

KSP44 / KSP45 NPN Epitaxial Silicon Transistor KSP44 / KSP45 NPN Epitaxial Silicon Transistor Features High-oltage Transistor Collector-Emitter oltage: CEO = KSP44: 400 KSP45: 350 TO-92. Emitter 2. Base 2 3 2 3. Collector 3 Straight Lead Bent Lead

More information

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector

More information

BC546, B BC547, A, B, C BC548, A, B, C

BC546, B BC547, A, B, C BC548, A, B, C NPN Silicon MAXIMUM RATINGS Rating Symbol BC546 BC547 Unit Collector Emitter oltage CEO 65 45 30 dc Collector Base oltage CBO 80 50 30 dc Emitter Base oltage EBO 6.0 dc Collector Current Continuous I C

More information

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)

More information

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon BC87-6L, SBC87-6L, BC87-25L, SBC87-25L, BC87-4L, SBC87-4L General Purpose Transistors NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: Cob = 2.5 pf (typ.) High Transition

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.

More information

MJE243 - NPN, MJE253 - PNP

MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter

More information

Excellent Integrated System Limited

Excellent Integrated System Limited Datasheet of -7 - TRNS PNP 3V 1 SOT-323 Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Diodes Incorporated -7 For any

More information

KSC2383 NPN Epitaxial Silicon Transistor

KSC2383 NPN Epitaxial Silicon Transistor KSC2383 NPN Epitaxial Silicon Transistor TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92

More information

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω

NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications

More information

NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS

NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors.  MAXIMUM RATINGS - MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase

More information

NPN Silicon Planar High Voltage Transistor

NPN Silicon Planar High Voltage Transistor NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21

More information

Micro Commercial Components MCP140N10Y N-Channel Enhancement Mode Field Effect Transistor TO-220 Symbol Parameter Rating Unit 1 2 3

Micro Commercial Components MCP140N10Y N-Channel Enhancement Mode Field Effect Transistor TO-220 Symbol Parameter Rating Unit 1 2 3 omponents 2736 Marilla Street Chatsworth!"# $%!"# MCP4NY Features Trench Power MV MOSFET technology Low DS(ON) Halogen free available upon request by adding suffix "-HF" Low Gate Charge Optimized for fast-switching

More information

BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector

More information

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component

More information

SOT-563 Plastic-Encapsulate Transistors

SOT-563 Plastic-Encapsulate Transistors JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC T SOT-563 Plastic-Encapsulate Transistors BC847BVN DUAL TRANSISTOR (NPN+PNP) SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W)

More information

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor NSSC2MZ4, NSVC2MZ4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage

More information

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22

More information

MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Emitter Base Voltage V EBO 4. Vdc Collector Current

More information

MJD44H11 (NPN) MJD45H11 (PNP)

MJD44H11 (NPN) MJD45H11 (PNP) MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

More information

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth

More information

NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m

NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m NSS22WTG 2, 2 A, Low CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and

More information

BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS

BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT package which is designed for medium power surface

More information

M C C. MCAC48N10Y. Features. N-Channel Power MOSFET DFN5060. C Unless Otherwise Specified. Micro Commercial Components

M C C.   MCAC48N10Y. Features. N-Channel Power MOSFET DFN5060. C Unless Otherwise Specified. Micro Commercial Components omponents 736 Marilla treet Chatsworth!"# $%!"# MCC48NY Features Trench Power MV MOFET technology Very low on-resistance (ON) Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94

More information

MUN5311DW1T1G Series.

MUN5311DW1T1G Series. MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

More information

MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS

MPSA18G. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45

More information

MPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION

MPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS.  MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc

More information

UNISONIC TECHNOLOGIES CO., LTD MMBT4401

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 UNISONIC TECHNOLOGIES CO., LTD MMBT441 NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION The UTC MMBT441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. 2 1

More information

Dual General Purpose Transistors

Dual General Purpose Transistors DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for

More information

MMBT2222A SMALL SIGNAL NPN TRANSISTOR

MMBT2222A SMALL SIGNAL NPN TRANSISTOR SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY

More information

UMC2NT1, UMC3NT1, UMC5NT1

UMC2NT1, UMC3NT1, UMC5NT1 UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor

More information

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

More information

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and

More information

NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter

More information