MMBT2222A SMALL SIGNAL NPN TRANSISTOR
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- Prosper Perry
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1 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter alue Unit CBO Collector-Emitter oltage (IE = 0) 75 CEO Collector-Emitter oltage (I B = 0) 40 EBO Emitter-Base oltage (IC = 0) 6 I C Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A P tot Total Dissipation at T amb = 25 o C 3 mw Tstg Storage Temperature -65 to 1 T j Max. Operating Junction Temperature 1 o C o C February /5
2 THERMAL DATA R thj-amb Thermal Resistance Junction-Ambient Max Device mounted on a PCB area of 1 cm 2. o C/W ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEX Collector Cut-off CE = na Current ( BE = -3 ) IBEX Base Cut-off Current ( BE = -3 ) CE = na ICBO I EBO (BR)CEO (BR)CBO (BR)EBO CE(sat) BE(sat) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter (IB = 0) (I E = 0) Emitter-Base (I C = 0) Collector-Emitter Saturation oltage CB = 75 CB = 75 T j = 1 o C EB = 3 15 na I C = 10 ma 40 I C = 10 µa 75 IE = 10 µa 6 IC = 1 ma I C = 0 ma IB = 15 ma I B = ma I C = 1 ma I B = 15 ma Saturation oltage IC = 0 ma IB = ma hfe DC Current Gain IC = 0.1 ma CE = 10 I C = 1 ma CE = 10 I C = 10 ma CE = 10 I C = 1 ma CE = 10 I C = 1 ma CE = 1 IC = 0 ma CE = ft Transition Frequency IC = 20 ma CE = 20 f = 100MHz 270 MHz IE = 0 CB = 10 f = 1 MHz 4 8 pf Capacitance Emitter-Base I C = 0 EB = 0.5 f = 1MHz pf Capacitance NF Noise Figure IC = 0.1 ma CE = 10 f = 1 KHz 4 db f = 200 Hz R G = 1 KΩ CCBO C EBO hie Input Impedance CE = 10 IC = 1 ma f = 1 KHz h re Reverse oltage Ratio CE = 10 I C = 1 ma f = 1 KHz na µa KΩ KΩ h fe Small Signal Current Gain CE = 10 I C = 1 ma f = 1 KHz hoe Output Admittance CE = 10 IC = 1 ma f = 1 KHz Pulsed: Pulse duration = 300 µs, duty cycle 2 % µs µs 2/5
3 ELECTRICAL CHARACTERISTICS (Continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit t d Delay Time I C = 1 ma I B = 15 ma 5 10 ns tr Rise Time CC = ns ts Storage Time IC = 1 ma IB1 = - IB2 = 15 ma ns tf Fall Time CC = ns Pulsed: Pulse duration = 300 µs, duty cycle 2 % 3/5
4 SOT-23 MECHANICAL DATA DIM. mm mils MIN. TYP. MAX. MIN. TYP. MAX. A B C D E F G H L M N O /B 4/5
5 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 5/5
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