C 2 B 1 E 1 E 2 B 2 C 1. Top View

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MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power

1 MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) Mechanical Data Case: SOT-363 Case Material: Molded Plastic, Green Molding Compound, Note 5. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD-2D Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-22, Method 28 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight:.6 grams (approximate) C 2 B E E, B, C = PNP426 Section E2, B2, C2 = NPN424 Section E 2 B 2 C Top View Device Schematic Maximum Ratings, NPN 424 A = 25 C unless otherwise specified Collector-Base Voltage V CBO 3 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 5. V Collector Current Continuous (Note ) I C 2 ma Maximum Ratings, PNP 426 A = 25 C unless otherwise specified Collector-Base Voltage V CBO -25 V Collector-Emitter Voltage V CEO -25 V Emitter-Base Voltage V EBO -4 V Collector Current - Continuous (Note ) I C -2 ma Thermal Characteristics Total Device Power Dissipation (Note, 2) P D 2 mw Thermal Resistance, Junction to Ambient (Note ) R θja 625 C/W Notes:. Device mounted on FR-4 PCB, inch x.85 inch x.62 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP2, which can be found on our website at 2. Maximum combined dissipation. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at 5. Product manufactured with Date Code UO (week 4, 27) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMDT446 Document number: DS362 Rev. - 2 of 5

2 MMDT446 Electrical Characteristics, NPN 424 A = 25 C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V (BR)CBO 3 V I C = μa, I E = Collector-Emitter Breakdown Voltage V (BR)CEO 25 V I C =.ma, I B = Emitter-Base Breakdown Voltage V (BR)EBO 5. V I E = μa, I C = Collector Cutoff Current I CBO 5 na V CB = 2V, I E = V Emitter Cutoff Current I EBO 5 na V EB = 3.V, I C = V ON CHARACTERISTICS (Note 6) DC Current Gain h FE 2 36 I C = 2.mA, V CE =.V 6 I C = 5mA, V CE =.V Collector-Emitter Saturation Voltage V CE(SAT).3 V I C = 5mA, I B = 5.mA Base-Emitter Saturation Voltage V BE(SAT).95 V I C = 5mA, I B = 5.mA SMALL SIGNAL CHARACTERISTICS Output Capacitance C obo 4. pf V CB = 5.V, f =.MHz, I E = Input Capacitance C ibo 8. pf V EB =.5V, f =.MHz, I C = Small Signal Current Gain h fe 2 48 V CE =.V, I C = 2.mA, f =.khz Current Gain-Bandwidth Product f T 3 MHz V CE = 2V, I C = ma, f = MHz Noise Figure NF 5. db V CE = 5.V, I C = μa, R S =.kω, f =.khz Electrical Characteristics, PNP 426 A = 25 C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage V (BR)CBO -25 V I C = -μa, I E = Collector-Emitter Breakdown Voltage V (BR)CEO -25 V I C = -.ma, I B = Emitter-Base Breakdown Voltage V (BR)EBO -4. V I E = -μa, I C = Collector Cutoff Current I CBO -5 na V CB = -2V, I E = V Emitter Cutoff Current I EBO -5 na V EB = -3.V, I C = V ON CHARACTERISTICS (Note 6) DC Current Gain h FE 2 36 I C = -2.mA, V CE = -.V 6 I C = -5mA, V CE = -.V Collector-Emitter Saturation Voltage V CE(SAT) -.4 V I C = -5mA, I B = -5.mA Base-Emitter Saturation Voltage V BE(SAT) -.95 V I C = -5mA, I B = -5.mA SMALL SIGNAL CHARACTERISTICS Output Capacitance C obo 4.5 pf V CB = -5.V, f =.MHz, I E = Input Capacitance C ibo pf V EB = -.5V, f =.MHz, I C = Small Signal Current Gain h fe 2 48 V CE = -.V, I C = -2.mA, f =.khz Current Gain-Bandwidth Product f T 25 MHz V CE = -2V, I C = -ma, f = MHz Noise Figure NF 4. db V CE = -5.V, I C = -μa, R S =.kω, f =.khz Notes: 6. Short duration pulse test used to minimize self-heating effect. MMDT446 Document number: DS362 Rev of 5

3 MMDT446, P D, POWER DISSIPATION (mw) h FE, DC CURRENT GAIN 5 RθJA = 625 C/W T A, AMBIENT TEMPERATURE ( C) Fig. Power Dissipation vs. Ambient Temperature (Total Device, Note )., Fig. 2 Typical DC Current Gain vs. Collector Current (PNP-426) V CE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V).., Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-426) V BE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) I C I B =.5 Fig. 4 Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-426), CAPACITANCE (pf) h FE, DC CURRENT GAIN. V R, REVERSE VOLTAGE (V) Fig. 5 Typical Capacitance Characteristics (PNP-426)., I C, COLLECTOR CURRENT (ma) Fig. 6 Typical DC Current Gain vs. Collector Current (NPN-424) MMDT446 Document number: DS362 Rev of 5

4 V CE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)..., Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-424) 5 V BE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) MMDT446.., Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-424) CAPACITANCE (pf) 5. V R, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance Characteristics (NPN-424) Ordering Information (Note 7) Part Number Case Packaging MMDT446-7-F SOT-363 3/Tape & Reel Notes: 7. For packaging details, go to our website at Marking Information K2 YM K2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 22) M = Month (ex: 9 = September) Date Code Key Year Code J K L M N P R S T U V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code O N D MMDT446 Document number: DS362 Rev of 5

5 MMDT446 Package Outline Dimensions A K J H D F B C L M SOT-363 Dim Min Max A..3 B.5.35 C D.65 Typ F.4.45 H J. K.9. L.25.4 M..22 α 8 All Dimensions in mm Suggested Pad Layout C2 C2 Z G Y X C Dimensions Value (in mm) Z 2.5 G.3 X.42 Y.6 C.9 C2.65 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMDT446 Document number: DS362 Rev of 5

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