Excellent Integrated System Limited

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1 Datasheet of -7 - TRNS PNP 3V 1 SOT-323 Excellent Integrated System Limited Stocking Distributor Click to view price, real time Inventory, Delivery & Lifecycle Information: Diodes Incorporated -7 For any questions, you can us directly: sales@integrated-circuit.com

2 Datasheet of -7 - TRNS PNP 3V 1 SOT-323 LOW V CE(ST) PNP SURFCE MOUNT TRNSISTOR Features Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideal for Low Power mplification and Switching Complementary NPN Type vailable (2DD2656) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green Device" (Note 2) Mechanical Data Case: SOT-323 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level 1 per J-STD-2D Terminals: Finish Matte Tin annealed over lloy 42 leadframe. Solderable per MIL-STD-22, Method 28 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight:.6 grams (approximate) C B E Top View Device Schematic Maximum = 25 C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage V CBO -3 V Collector-Emitter Voltage V CEO -3 V Emitter-Base Voltage V EBO -6 V Collector Current - Continuous I C -1 Peak Pulse Collector Current I CM -2 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note T = 25 C P D 3 mw Thermal Resistance, Junction to mbient (Note T = 25 C R θj 417 C/W Power Dissipation (Note T = 25 C P D 5 mw Thermal Resistance, Junction to mbient (Note T = 25 C R θj 25 C/W Operating and Storage Temperature Range T J, T STG -55 to +15 C Electrical = 25 C unless otherwise specified Characteristic Symbol Min Typ Max Unit Conditions OFF CHRCTERISTICS Collector-Base Breakdown Voltage V (BR)CBO -3 V I C = -1μ, I E = Collector-Emitter Breakdown Voltage (Note 5) V (BR)CEO -3 V I C = -1m, I B = Emitter-Base Breakdown Voltage V (BR)EBO -6 V I E = -1μ, I C = Collector Cut-Off Current I CBO -.1 μ V CB = -3V, I E = Emitter Cut-Off Current I EBO -.1 μ V EB = -6V, I C = ON CHRCTERISTICS (Note 5) Collector-Emitter Saturation Voltage V CE(ST) mv I C = -5m, I B = -25m DC Current Gain h FE V CE = -2V, I C = -1m SMLL SIGNL CHRCTERISTICS Output Capacitance C obo 16 pf V CB = -1V, I E =, f = 1MHz Current Gain-Bandwidth Product f T 3 MHz V CE = -2V, I C = -1m, f = 1MHz Notes: 1. No purposefully added lead. 2. Diode s Inc. s Green policy can be found on our website at 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Device mounted on FR-4 PCB with 1 inch 2 copper pad layout. 5. Measured under pulsed conditions. Pulse width = 3μs. Duty cycle 2%. Document number: DS3164 Rev of 4

3 Datasheet of -7 - TRNS PNP 3V 1 SOT P D, POWER DISSIPTION (W) (Note 3) (Note 4) T, MBIENT TEMPERTURE ( C) Fig. 1 Power Dissipation vs. mbient Temperature -I C, COLLECTOR CURRENT () I = -5m B I = -4m B I = -3m B I = -2m B I = -1m B V CE, COLLECTOR-EMITTER VOLTGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage h FE, DC CURRENT GIN 1, 1 T = 85 C T = 25 C T = 15 C V = -2V CE -V CE(ST), COLLECTOR-EMITTER STURTION VOLTGE (V) 1.1 I /I = 2 C B T = 15 C T = 85 C T = 25 C -V BE(ON), BSE-EMITTER TURN-ON VOLTGE (V) , 1, -I C, COLLECTOR CURRENT (m) Fig. 3 Typical DC Current Gain T = 25 C T = 85 C V = -2V CE T = 15 C , -I C, COLLECTOR CURRENT (m) Fig. 5 Typical Base-Emitter Turn-On Voltage -V BE(ST), BSE-EMITTER STURTION VOLTGE (V) , -I C, COLLECTOR CURRENT (m) Fig. 4 Typical Collector-Emitter Saturation Voltage I C/IB = 2 T = 25 C T = 85 C T = 15 C , -I C, COLLECTOR CURRENT (m) Fig. 6 Typical Base-Emitter Saturation Voltage Document number: DS3164 Rev of 4

4 Datasheet of -7 - TRNS PNP 3V 1 SOT-323 1, f = 1MHz CPCITNCE (pf) 1 1 C ibo C obo V R, REVERSE VOLTGE (V) Fig. 7 Typical Capacitance Characteristics Ordering Information (Note 6) Part Number Case Packaging -7 SOT-323 3/Tape & Reel Notes: 6. For packaging details, go to our website at Marking Information RP1 YM RP1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 28) M = Month (ex: 9 = September) Date Code Key Year Code V W X Y Z B C Month Jan Feb Mar pr May Jun Jul ug Sep Oct Nov Dec Code O N D Package Outline Dimensions K J G H D B C L M SOT-323 Dim Min Max Typ B C D G H J..1.5 K L M α 8 - ll Dimensions in mm Document number: DS3164 Rev of 4

5 Powered by TCPDF ( Powered by TCPDF ( Distributor of Diodes Incorporated: Excellent Integrated System Limited Datasheet of -7 - TRNS PNP 3V 1 SOT-323 Suggested Pad Layout Z Y X E C Dimensions Value (in mm) Z 2.8 X.7 Y.9 C 1.9 E 1. IMPORTNT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. Document number: DS3164 Rev of 4

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