DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) Rating Symbol Value Units Collector-Base Voltage. 50 V Collector-Emitter Voltage
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1 DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP) general-purpose transistors. This device is ideal for portable applications where board space is at a premium. SOT- 363 FEATURES Electrically-Isolated Complimentary Transistor Pairs Lead free in compliance with EU RoHS 2. Green molding compound as per IEC standard APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: 47P MAXIMUM RATINGS - NPN = 25 C Unless otherwise noted Rating Symbol alue Units Collector-Base oltage CBO 5 Collector-Emitter oltage CEO 45 Emitter-Base oltage oltage EBO 6. Collector Current 1 ma MAXIMUM RATINGS - PNP T = 25 C Unless otherwise noted J Rating Symbol alue Units Collector-Base oltage CBO -5 Collector-Emitter oltage CEO -45 Emitter-Base oltage oltage EBO -5. Collector Current -1 ma THERMAL CHARACTERISTICS Characteristic Symbol alue Units Total Power Dissipation (Note 1) Operating Junction Temperature Range Storage Temperature Range P D 2 mw TJ -55 to +15 Tstg -55 to +15 Thermal Resistance, Junction to Ambient (Note 1) R thja 556 Note 1. FR-4 board 7 x 6 x 1mm with minimum recommended pad layout C C C/W February 1,218-RE.3 Page 1
2 NPN ELECTRICAL CHARACTERISTICS (Note 2) Note 2. Short duration test pulse used to minimize self-heating T = 25 C Unless otherwise noted J Parameter Symbol Conditions Min Typ Max Units Collector-Emitter Breakdown oltage (BR)CEO = 1mA Collector-Emitter Breakdown oltage (BR)CES = 1uA, EB= Collector-Base Breakdown oltage (BR)CBO = 1uA Emitter-Base Breakdown oltage (BR)EBO I E = 1.uA Collector Cutoff Current BO CB= 3, I E= na =15 C ua Emitter Cutoff Current I EBO EB= 5, = na DC Current Gain h FE CE= 5, = 2.mA Collector-Emitter Saturation oltage CE(SAT) = 1mA, I B=.5mA = 1mA, I B= 5mA Base-Emitter Saturation oltage BE(SAT) = 1mA, I B =.5mA Base-Emitter oltage BE CE= 5, = 2.mA Gain-Bandwidth Product f T CE= 5, = 1mA f = 1MHz MHz Collector-Base Capacitance CCBO CB= 1, f =1.MHz pf Emitter-Base Capacitance CEBO EB=.5, f =1.MHz pf PNP ELECTRICAL CHARACTERISTICS (Note 2) T = 25 C Unless otherwise noted Parameter Symbol Conditions J Min Typ Max Units Collector-Emitter Breakdown oltage (BR)CEO = -1mA Collector-Emitter Breakdown oltage (BR)CES = -1uA, EB= Collector-Base Breakdown oltage (BR)CBO = -1uA Emitter-Base Breakdown oltage (BR)EBO I E = -1.uA Collector Cutoff Current BO na CB= -3, I E= =15 C ua Emitter Cutoff Current I EBO EB= -5, = na DC Current Gain h FE CE= -5, = -2.mA Collector-Emitter Saturation oltage CE(SAT) = -1mA, I B= -.5mA = -1mA, I B = -5mA Base-Emitter Saturation oltage BE(SAT) = -1mA, I B = -.5mA Base-Emitter oltage BE CE= -5, = -2.mA Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance f T CE= -5, = -1mA f = 1MHz MHz CCBO CB= -1, f =1.MHz pf CEBO EB= -.5, f =1.MHz pf February 1,218-RE.3 Page 2
3 ELECTRICA5L CHARACTERISTICS CURE 1 5 B, Collector Current (na) 1 1 CB =3 hfe =25 C =15 C CE =5 =1 C Junction Temperature, ( O C) Collector Current, IC (ma) Fig. 1. Typical B vs. Junction Temperature Fig. 2. Typical h FE vs. Collector Current BE(ON), (m) = 1 C = 25 C CE(sat), (m) 1 = 15 C = 25 C = 1 C 2 = 15 C CE =5 /I B = Collector Current, (ma) Fig. 3. Typical BE(ON) vs. Collector Current Collector Current, (ma) Fig. 4. Typical CE(SAT) vs. Collector Current = 25 C C ib (EB) = 25 C BE(sat), (m) = 1 C Capacitance, C (pf) C ob (CB) 2 = 15 C /I B = Collector Current, (ma) Fig. 5. Typical BE(SAT) vs. Collector Current Reverse oltage () Fig. 6. Typical Capacitances vs. Reverse oltage February 1,218-RE.3 Page 3
4 PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS SOT-363 Unit: inch(mm).87(2.2).74(1.9).1(.25).54(1.35).45(1.15).3(.75).21(.55).56(1.4).47(1.2).1(.25).3(.8).4(.1).(.).12(.3).5(.15) ORDERING INFORMATION BC847BPN T/R7-3, units per 7 inch reel BC847BPN T/R13-1, units per 13 inch reel February 1,218-RE.3 Page 4
5 Part No_packing code_ersion BC847BPN_R1_1 BC847BPN_R2_1 For example : RB5-4_R2_1 Part No. Serial number ersion code means HF Packing size code means 13" Packing type means T/R Packing Code XX ersion Code XXXXX Packing type 1 st Code Packing size code 2 nd Code HF or RoHS 1 st Code 2 nd ~5 th Code Tape and Ammunition Box (T/B) Tape and Reel (T/R) Bulk Packing (B/P) Tube Packing (T/P) Tape and Reel (Right Oriented) (TRR) Tape and Reel (Left Oriented) (TRL) FORMING A N/A HF serial number R 7" 1 RoHS 1 serial number B 13" 2 T 26mm X S 52mm Y L F PANASERT T/B CATHODE UP (PBCU) PANASERT T/B CATHODE DOWN (PBCD) U D February 1,218-RE.3 PAGE. 5
6 Disclaimer Reproducing and modifying information of the document is prohibited without permission from Panjit International Inc.. Panjit International Inc. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. Panjit International Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Panjit International Inc. for any damages resulting from such improper use or sale. Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when complaining. February 1,218-RE.3 PAGE. 6
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BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon
BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2
NPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.
BC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =
DUAL 6 NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: CEO =6; I C = ; h FE =1-3 PNP: CEO =-6; I C = -; h FE =1-3 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6
MCC BC558A/B/C. Features. PNP Silicon Amplifier Transistor 625mW
omponents 2736 Marilla Street Chatsworth!"# $%!"# BC556A/B/C BC557A/B/C A/B/C Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) 15 o C Junction Temperature
BC856ALT1 Series. General Purpose Transistors. PNP Silicon. MAXIMUM RATINGS (T A = 25 C unless otherwise noted) MARKING DIAGRAM
Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit CollectorEmitter oltage BC856 BC857 BC858, BC859 CollectorBase oltage BC856 BC857
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free
-HF Thru. -HF Series (PNP) RoHS Device Halogen Free Features - Ideally suited for automatic insertion - Power dissipation PCM:.25W (@T=25 C) - Low current.(max. 1m) - Collector-base voltage CBO: = -8 =
MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW
MUN52xxDWT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors;
5 to 70 Volt DEVICES FOR BIPOLAR APPLICATIONS
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watt STAND-OFF VOLTAGE 5 to 70 Volt Recongnized File # E210467 FEATURES For surface mounted applications in order to optimize board space AEC-Q101 qualified
BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856
UNISONIC TECHNOLOGIES CO., LTD MPSA92/93
UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
Dual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
PNT723T503E0-2 High EB High DC gain Ultra-Small package switch transistor
Feature This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. Package: SOT-723 Emitter -Base Breakdown Voltage 11V High DC current gain typical 38 Low Saturation Voltage 8mv.15 continuous collector
Dual Bias Resistor Transistors
DATA SHEET SEMICONDUCTOR MUN5DW Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
Darlington Amplifier Transistor
We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
MMBT3904. REVERSE VOLTAGE 60 Volts FORWARD CURRENT 0.2 Amperes NPN GENERAL PURPOSE TRANSISTOR SOT-23
MMBT394 NPN GENERAL PURPOSE TRANSISTOR REVERSE VOLTAGE 6 Volts FORWARD CURRENT.2 Amperes FEATURES For switching and amplifier applications. Complementary PNP type available (MMBT396) SOT-23 MECHANICAL
Device Symbol. Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC846ASQ-7-F Automotive KNS 7 8 3,000
KNS YM 65V DUAL NPN SMALL SIGNAL TRANSISTOR Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV CEO
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
DATA SHEET. BC847BVN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Aug 30
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistor Supersedes data of 2001 Aug 30 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package
7X = Device Marking. Symbol
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4140DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2001 Dec 13
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low V CEsat NPN/PNP transistor 2001 Dec 13 FEATURES 600 mw total power dissipation Low collector-emitter saturation voltage High
BC856ALT1G Series. General Purpose Transistors. PNP Silicon
General Purpose Transistors PNP Silicon Features S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
DATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 NPN/PNP general purpose transistor Supersedes data of 1999 Apr 26 2001 Oct 26 FEATURES Low collector capacitance Low collector-emitter saturation
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: V CEO =15V; V CE(sat) =.1V; I C = 1.5A; PNP: V CEO =-12V; V CE(sat) =-.1V; I C = -1.25A; DESCRIPTION This new combination device comprises
Obsolete Product(s) - Obsolete Product(s)
PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
2N7002K. 60V N-Channel Enhancement Mode MOSFET - ESD Protected I D T A C C P D T J FEATURES MECHANICAL DATA
6 N-hannel Enhancement Mode MOFET - E Protected FEATURE R (ON), G @,I @5mA=3Ω R (ON), G @4.5,I @ma=4ω Advanced Trench Process Technology High ensity ell esign For Ultra Low On-Resistance ery Low Leakage
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30