NPN General Purpose Transistor

Transcription

1 NPN General Purpose Transistor!Features 1) BCEO > 4 (IC = 1mA) 2) Complements the UMT39 / SST39 / MMST39 / 2N39.!External dimensions (Units : mm) UMT394 ROHM : UMT3 EIAJ : SC7 2.±.2 1.3± ±.1 2.1±.1.9±.1.2.7±.1.1±. ~.1.1~.4!Package, marking and packaging specifications SST ±.2 1.9± ±.1 Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT394 UMT3 T 3 SST394 SST3 T11 3 MMST394 SMT3 T14 3 2N394 TO92 T93 3 ROHM : SST ± ~.1.2Min. MMST ±.2 1.9± ±.1!Absolute maximum ratings (Ta = 2 C) Parameter Collectorbase voltage Collectoremitter voltage Emitterbase voltage Collector Collector power dissipation 2N394 Junction temperature Storage temperature * UMT394, SST394, MMST394 SST394, MMST394 Symbol CBO CEO EBO IC PC Tj Tstg hen mounted on a 7 x x. mm ceramic board. Limits ~+1 Unit A C C * ROHM : SMT3 EIAJ : SC9 2N394 ROHM : TO92 EIAJ : SC43 4.8±.2 (12.7Min.) ± ±.2 3.7±.2 2.Min ± ~.1.3~.!Electrical characteristics (Ta = 2 C) Parameter Symbol Min. Typ. Max. Unit Conditions Collectorbase breakdown voltage Collectoremitter breakdown voltage Emitterbase breakdown voltage Collector cutoff Emitter cutoff Collectoremitter saturation voltage Baseemitter saturation voltage BCBO BCEO BEBO ICES IEBO CE(sat) BE(sat) na na IC = µa IC = 1mA IE = µa CB = 3 EB = 3.2 IC/IB = ma/1ma.3 IC/IB = ma/ma IC/IB = ma/1ma IC/IB = ma/ma 4 CE = 1, IC =.1mA 7 CE = 1, IC = 1mA DC transfer ratio hfe 3 CE = 1, IC = ma ~ CE = 1, IC = ma 3 CE = 1, IC = ma Transition frequency ft 3 MHz CE = 2, IE = ma, f = MHz Collector output capacitance Cob 4 pf CB =, f = khz Emitter input capacitance Cib 8 pf EB =., f = khz Delay time td 3 ns CC = 3, BE(OFF) =., IC = ma, IB1 = 1mA Rise time tr 3 ns CC = 3, BE(OFF) =., IC = ma, IB1 = 1mA Storage time tstg 2 ns CC = 3, IC = ma, IB1 = IB2 = 1mA Fall time tf ns CC = 3, IC = ma, IB1 = IB2 = 1mA

2 !Electrical characteristic curves IB=µA 2 COLLECTOREMITTER OLTAGE : CE () Fig.1 Grounded emitter output characteristics COLLECTOR EMITTER SATURATION OLTAGE : CE(sat) () IC / IB=.1 1. Fig.2 Collectoremitter saturation voltage vs. collector DC CURRENT GAIN : hfe CE= Fig.3 DC gain vs. collector ( Ι ) DC CURRENT GAIN : hfe Ta=12 C Ta= C.1 1. Fig.4 DC gain vs. collector ( ΙΙ )

3 AC CURRENT GAIN : hfe Fig. AC gain vs. collector f=hz BASE EMITTER SATURATION OLTAGE : BE(sat) () IC / IB=.1 1. Fig. Baseemitter saturation voltage vs. collector BASE EMITTER OLTAGE : BE(ON) () Fig.7 Grounded emitter propagation characteristics TURN ON TIME : ton (ns) CC=3 4 1 IC / IB= 1. Fig.8 Turnon time vs. collector RISE TIME : tr (ns) CC=4 IC / IB= 1. Fig.9 Rise time vs. collector IC=IB1=IB2 CC=4 IC/IB= f=1mhz STORAGE TIME : ts (ns) 4 1 CE=3 FALL TIME : tf (ns) CAPACITANCE (pf) 1 Cib Cob 1. Fig. Storage time vs. collector 1. Fig.11 Fall time vs. collector REERSE BIAS OLTAGE () Fig.12 Input / output capacitance vs. voltage

4 COLLECTOREMITTER OLTAGE : CE () MHz 2MHz 4MHz MHz 3 MHz 1. 3MHz.1 2MHz MHz.1 1. Fig.13 Gain bandwidth product CURRENT GAINBANDIDTH PRODUCT : ft (MHz) 1. Fig.14 Gain bandwidth product vs. collector h PARAMETER NORMALIZED TO 1mA hie hre hoe f=27hz hfe 1 IC=1mA hie=3.84kω hfe=141 hre=.3.1 hoe=.8µs.1 1 Fig.1 h parameter vs. collector COLLECTOR CUTOFF CURRENT : ICBO (A) µ CB=2 1µ n n 1n.1n ANBIENT TEMPERATURE : Ta ( C) Fig.1 Noise characteristics ( Ι ) k k.db 8.dB 3.dB NF=1.dB 1.dB db f=khz Fig.17 Noise characteristics ( ΙΙ ) k k.db 8.dB 3.dB NF=1.dB 1.dB db f=hz Fig.18 Noise characteristics ( ΙΙΙ ) k k.db 8.dB NF=3.dB db f=hz NOISE FIGURE : NF (db) IC=µA RS=kΩ Fig.19 Noise characteristics ( Ι ) k k FREQUENCY : f (Hz) Fig.2 Noise vs. collector

5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, officeautomation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclearreactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 1) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for NonProliferation of eapons of Mass Destruction. Appendix1Rev1.