2.5V Drive Nch+Pch MOSFET

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1 .V Drive Nch+Pch MOSFET EM6M EM6M Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) EMT6 Features ) Nch MOSFET and Pch MOSFET are put in EMT6 package. ) High-speed switching. 3) Low voltage drive (.V drive). 4) Built-in G-S Protection Diode. Each lead has same dimensions Abbreviated symbol : M Applications Switching Packaging specifications Inner circuit Type EM6M Package Code Basic ordering unit (pieces) Taping TR 8 (6) () (4) Absolute maximum ratings (Ta=) Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation Continuous Channel temperature Range of storage temperature Pw µs, Duty cycle % Mounted on a ceramic board Limits Tr : P-ch Symbol Tr : N-ch VDSS 3 VGSS ± ID ±. IDP ±.4 PD Tch Tstg to + ± ±. ±.4 () () ESD PROTECTION DIODE BODY DIODE Unit V V A A mw / TOTAL mw / ELEMENT C C (3) () Tr (Nch) Source () Tr (Nch) Gate (3) Tr (Pch) Drain (4) Tr (Pch) Source () Tr (Pch) Gate (6) Tr (Nch) Drain Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. /6

2 EM6M N-ch Electrical characteristics (Ta=) Parameter Gate-source leakage Symbol IGSS Min. Typ. Max. ± Unit µa Conditions VGS= ±V, VDS=V Drain-source breakdown voltage V(BR) DSS 3 V ID=µA, VGS=V Zero gate voltage drain current IDSS µa VDS=3V, VGS=V Gate threshold voltage VGS (th).8. V VDS=3V, ID=µA Static drain-source on-state 8 Ω ID=mA, VGS=4V RDS (on) resistance 7 3 Ω ID=mA, VGS=.V Forward transfer admittance Yfs ms VDS=3V, ID=mA Input capacitance Ciss 3 pf VDS=V Output capacitance Coss 9 pf VGS=V Reverse transfer capacitance Crss 4 pf f=mhz Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge td (on) ns VDD V tr 3 ns ID=mA VGS=V td (off) 8 ns RL=Ω 8 ns RG=Ω Qg.9 nc VDD V, ID=.A Qgs. nc VGS=4.V Qgd. nc RL=Ω, RG=Ω P-ch Electrical characteristics (Ta=) Parameter Gate-source leakage Symbol IGSS Min. Typ. Max. ± Unit µa Conditions VGS= ±V, VDS=V Drain-source breakdown voltage V(BR) DSS V ID= ma, VGS=V Zero gate voltage drain current IDSS µa VDS= V, VGS=V Gate threshold voltage VGS (th).7. V VDS= V, ID= ma Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge.. Ω ID=.A, VGS= 4.V RDS (on)..6 Ω ID=.A, VGS= 4V. 3. Ω ID=.A, VGS=.V Yfs. S VDS= V, ID=.A Ciss pf VDS= V Coss pf VGS= V Crss pf f=mhz td (on) 9 ns VDD V tr 6 ns ID=.A VGS= 4.V td (off) 3 ns RL= Ω 4 ns RG= Ω Qg. nc VDD V, ID=.A Qgs. nc VGS= 4.V Qgd. nc RL= 7Ω, RG= Ω /6

3 EM6M N-ch Electrical characteristic curve DRAIN CURRENT : ID(A) m m m m m m VDS=3V m Ta= m.m.m.m 3 4 GATE-SOURCE VOLTAGE : VGS(V) Ta= VGS=4V DRAIN CURRENT : ID(A) Ta= VGS=.V DRAIN CURRENT : ID (A) Fig. Typical Transfer Characteristics Fig. Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) ID=.A ID=.A Ta= GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Gate-Source Voltage FORWARD TRANSFER ADMITTANCE : Yfs (S) Ta= DRAIN CURRENT : ID (A) VDS=3V... Fig. Forward Transfer Admittance vs. Drain Current SOURCE CURRENT : IS (A) m m m m m m m m.m.m.m. Ta= SOURCE-DRAIN VOLTAGE : VSD (V) Fig.6 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) VGS=V. CAPACITANCE : C (pf) Ta= f=mhz VGS=V Ciss Coss Crss SWITHING TIME : t (ns) tr td(on) td(off) Ta= VDD=V VGS=V RG=Ω DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (ma) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics 3/6

4 EM6M P-ch Electrical characteristic curve.. Ta= VDS= V GATE-SOURCE VOLTAGE : VGS (V) Ta= VGS= 4.V... Ta= VGS= 4V... Fig. Typical Transfer Characteristics Fig. Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) Ta= VGS=.V... VGS=.V Ta= VGS= 4V VGS= 4.V ID=.A ID=.A Ta= GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ ) Fig. Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage CAPACITANCE : C (pf) Ciss Coss Crss Ta= f=mhz VGS=V.. DRAIN-SOURCE VOLTAGE : VDS (V) SWITCHING TIME : t (ns) td(off) td(on) tr Ta= VDD= V VGS= 4.V RG=Ω.. GATE-SOURCE VOLTAGE : VGS (V) Ta= VDD= V ID=.A RG= Ω TOTAL GATE CHARGE : Qg (nc) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 4/6

5 EM6M VGS=V SOURCE CURRENT : IS (A). Ta= SOURCE-DRAIN VOLTAGE : VSD (V) Fig. Source Current vs. Source-Drain Voltage N-ch Measurement circuit Pulse Width V GS I D V DS V GS % % % R G D.U.T. R L V DS % % V DD td(on) t r t d(off) ton t off Fig.9 Switching Time Test Circuit Fig. Switching Time Waveforms VG VGS ID VDS Qg IG(Const.) RG D.U.T. RL VGS Qgs Qgd VDD Charge Fig. Gate Charge Measurement Circuit Fig. Gate Charge Waveform /6

6 EM6M P-ch Measurement circuit I D V GS V DS V GS % % Pulse Width % R G D.U.T. R L % % V DD V DS td (on) tr td (off) t on t off Fig. Switching Time Test Circuit Fig. Switching Time Waveforms VG VGS ID VDS Qg IG(Const.) RG D.U.T. RL VGS Qgs Qgd VDD Charge Fig.3 Gate Charge Measurement Circuit Fig.4 Gate Charge Waveform 6/6

7 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co.jp Copyright 8 ROHM CO.,LTD. Saiin Mizosaki-cho, Ukyo-ku, Kyoto 6-88, Japan TEL : FAX : Appendix-Rev.

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