General purpose transistor (dual transistors)
|
|
- Elwin O’Brien’
- 5 years ago
- Views:
Transcription
1 General purpose transistor (dual transistors) Features 1) Both a SA37AK chip and SC41K chip in a EMT or UMT or SMT package. ) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Unit : mm) EMZ1 3 ROHM : EMT6 (6) (1) Structure NPN / PNP epitaxial planar silicon transistor UMZ1N (6) 1. (1).6 Equivalent circuit EMZ1 / UMZ1N Tr (1) Tr1 (6) Absolute maximum ratings (Ta = C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power EMZ1, UMZ1N dissipation Junction temperature Storage temperature 1 1mW per element must not be exceeded. mw per element must not be exceeded. Tr (6) Tr1 (1) Limits Symbol Unit Tr1 Tr CBO 6 6 CEO EBO 7 6 IC 1 1 ma 1 (TOTAL) 1 PC mw 3 (TOTAL) Tj 1 C Tstg to +1 C ROHM : UMT6 EIAJ : SC-88.3 ROHM : SMT6 EIAJ : SC-74 Min..3to.6 (6) to.8 to.1 (1) Rev.A 1/4
2 Electrical characteristics (Ta = C) Tr1 (NPN) Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BCBO 6 IC= Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency BCEO BEBO ICBO IEBO CE (sat) hfe ft MHz IC=1mA IE= CB=6 EB=7 IC/IB=mA/mA CE=6, IC=1mA CE=1, IE=mA, f=mhz Output capacitance Cob 3. PF CB=1, IE=A, f=1mhz Tr (PNP) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit Conditions BCBO BCEO BEBO ICBO IEBO CE (sat) hfe IC= IC=1mA IE= CB=6 EB=6 IC/IB=mA/mA CE=6, IC=1mA ft 14 MHz CE=1, IE=mA, f=mhz Cob 4 PF CB=1, IE=A, f=1mhz Packaging specifications Package Taping Code TR TR T8 Basic ordering Type unit (pieces) EMZ1 UMZ1N Electrical characteristic curves Tr1 (NPN) 1 Ta= C C C CE= Ta= C ma.4ma.4ma.3ma.3ma ma ma ma ma.ma IB=A Ta= C IB=A BASE TO EMITTER OLTAGE : BE () COLLECTOR TO EMITTER OLTAGE : CE () COLLECTOR TO EMITTER OLTAGE : CE () Fig.1 Grounded emitter propagation characteristics Fig. Grounded emitter output characteristics ( I ) Fig.3 Grounded emitter output characteristics ( II ) Rev.A /4
3 Ta= C CE= Ta= C CE= C C 1 COLLECTOR SATURATION OLTAGE : CE (sat) ()...1 IC/IB= Ta= C 1 Fig.4 DC current gain vs. collector current ( I ) Fig. DC current gain vs. collector current ( II ) Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) COLLECTOR SATURATION OLTAGE : CE (sat) ()...1 Ta= C C C IC/IB= 1 Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) COLLECTOR SATURATION OLTAGE : CE (sat) ()...1 Ta= C C C IC/IB= 1 Fig.8 Collector-emitter saturation voltage vs. collector current ( III ) TRANSITION FREQUENCY : ft (MHz) Ta= C CE=6 1 Fig.9 Gain bandwidth product vs. COLLECTOR OUTPUT CAPACITANCE : Cob (pf) EMITTER INPUT CAPACITANCE : Cib (pf) 1 Cib Cob Ta= C f=1mhz IE=A IC=A 1 COLLECTOR TO BASE OLTAGE : CB () EMITTER TO BASE OLTAGE : EB () Fig. Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) 1 Ta= C f=3mhz CB=6 Fig.11 Base-collector time constant vs. Rev.A 3/4
4 Tr (PNP) COLLECTOR CURRENT : Ic (ma) 1 Ta= C C 4 C CE= BASE TO EMITTER OLTAGE : BE () Fig.1 Grounded emitter propagation characteristics Ta= C IB= COLLECTOR TO EMITTER OLTAGE : CE () Fig.13 Grounded emitter output characteristics ( I ) Ta= C IB= COLLECTOR TO EMITTER OLTAGE : CE () Fig.14 Grounded emitter output characteristics ( II ) Ta= C CE= Ta= C C 4 C CE=6 1 COLLECTOR SATURATION OLTAGE : CE (sat) () 1 Ta= C IC/IB=. 1 Fig.1 DC current gain vs. collector current ( I ) Fig.16 DC current gain vs. collector current ( II ) Fig.17 Collector-emitter saturation voltage vs. collector current ( I ) COLLECTOR SATURATION OLTAGE : CE (sat) () 1. Ta= C C 4 C lc/lb= 1 Fig.18 Collector-emitter saturation voltage vs. collector current ( II ) TRANSITION FREQUENCY : ft (MHz) 1 Ta= C CE=1 Fig.19 Gain bandwidth product vs. COLLECTOR OUTPUT CAPACITANCE : Cob (pf) EMITTER INPUT CAPACITANCE : Cib (pf) Cib Cob Ta= C f=1mhz IE=A IC=A COLLECTOR TO BASE OLTAGE : CB () EMITTER TO BASE OLTAGE : EB () Fig. Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 4/4
5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1
General purpose(dual transistors)
General purpose(dual transistors) FMY FMY Features ) Both the SA4K and SC3906K chips in an SMT package. ) PNP and NPN chips are connecter in a common emitter. External dimensions (Unit : mm) SMT.9..9 0.9
More informationNew Designs. Not Recommended for. General purpose transistor (isolated transistor and diode) QSL11 QSL11. Transistors. Rev.A 1/4
General purpose transistor (isolated transistor and diode) A 2SB7 and a RB46F are housed independently in a TSMT5 package. Applications DC / DC converter Motor driver Features ) Tr : Low CE(sat) Di : Low
More informationNPN General Purpose Transistor
NPN General Purpose Transistor Features 1) BCEO < 45 (IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) Package, marking, and Packaging specifications Part No. Packaging type SST3 Marking
More informationPower management (dual transistors)
Power management (dual transistors) 2SA208 and DTC44EE are housed independently in a UMT package. Application Power management circuit Dimensions (Units : mm) UMT6 Features ) Power switching circuit in
More informationNPN General Purpose Transistor
NPN General Purpose Transistor!Features 1) BCEO > 4 (IC = 1mA) 2) Complements the UMT39 / SST39 / MMST39 / 2N39.!External dimensions (Units : mm) UMT394 ROHM : UMT3 EIAJ : SC7 2.±.2 1.3±.1...3 1.2±.1 2.1±.1.9±.1.2.7±.1.1±.
More informationPower Transistor (80V, 1A)
Power Transistor (80V, A) SD898 / SD733 / SD768S / SD863 SD898 / SD733 / SD768S / SD863!Features ) High VCEO, VCEO=80V ) High IC, IC=A (DC) 3) Good hfe linearity 4) Low VCE (sat) ) Complements the SB60
More informationNPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / Features 1) BCEO > 4 (IC=mA) 2) Complements the UMT297A / SST297A / MMST297A. Package, marking, and packaging
More informationPower management (dual transistors)
Power management (dual transistors) SC8 and SK39 are housed independently in a UMT package. Application Power management circuit Dimensions (Units : mm) Features ) Power switching circuit in a single package.
More informationNPN General Purpose Transistor
UMT39 / SST39 / MMST39 Transistors NPN General Purpose Transistor UMT39 / SST39 / MMST39 Features 1) BCEO > (IC = 1mA) 2) Complements the UMT39 / SST39 / MMST39. Dimensions (Unit : mm) UMT39 ROHM : UMT3
More informationMedium Power Transistor ( 32V, 1A)
Medium Power Transistor ( 32, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon
More informationLow V CE(sat) transistor (strobe flash)
Low CE(sat) transistor (strobe flash) SD8 Features ) Low CE(sat). CE(sat) = (Typ.) (IC/IB = 4A / 0.A) ) Excellent DC current gain characteristics. 3) Complements the SB4. Dimensions (Unit : mm) SD8 Structure
More informationGeneral purpose transistor (dual transistors)
General purpose transistor (dual transistors) EMZ1FHA / UMZ1N / UMZ1NFHA / IMZ1A / IMZ1AFRA EMZ1FHA / UMZ1NFHA EMZ1 / UMZ1N / IMZ1AFRA / AEC-Q1 Qualified Features 1) Both a SA37AKFRA chip and SC41KFRA
More informationDimensions (Unit : mm) 2SB EIAJ : SC-62 (3) Emitter Abbreviated symbol: BA
Medium Power Transistor ( 32, 1A) / 2SA1515S / Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon transistor Dimensions
More informationMedium Power Transistor (32V, 1A)
Medium Power Transistor (3, A) SD664 / SD88 Features ) Low CE(sat) =.(Typ.) (lc / lb = ma / ma) ) Compliments SB3 / SB37 Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 4..3
More informationMedium Power Transistor ( 32V, 1A)
Medium Power Transistor ( 32, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon
More informationDual comparators BA10393 / BA10393F / BA10393N. Standard ICs
Dual comparators BA9 / BA9F / BA9N The BA9, BA9F, and BA9N are dual comparators with open-collector output which allows wired OR connections. The operating power supply voltage ranges from to 6V for a
More informationPower management (dual transistors)
Power management (dual transistors) EMF3 / UMF3N DTA43T and SK39 are housed independently in a EMT6 package. Application Power management circuit Dimensions (Unit : mm) Features ) Power switching circuit
More informationQuad 2-input AND gate
Quad 2-input AND gate BU40B / BU40BF / BU40BF The BU40B, BU40BF, and BU40BF are dual-input positive-logic AND gates with four circuits mounted on a single chip. An inverter-type buffer is added to the
More informationHex Schmitt trigger BU4584B / BU4584BF / BU4584BFV. Standard ICs
Hex Schmitt trigger BU44B / BU44BF / BU44BF The BU44B, BU44BF, and BU44BF are inverter-type Schmitt trigger circuits, with six circuits mounted on a single chip. These are ideal when enhanced noise immunity
More informationQuad 2-channel analog multiplexer / demultiplexer
Quad 2-channel analog multiplexer / demultiplexer BU4B / BU4BF / BU4BF The BU4B, BU4BF, and BU4BF are multiplexers / demultiplexers capable of selecting and combining analog signals and digital signals
More informationQuad 2-input NAND Schmitt trigger
Quad 2-input NAND Schmitt trigger BU4093B / BU4093BF / BU4093BF The BU4093B, BU4093BF, and BU4093BF are 4-circuit, 2-input NAND gates whose input pins all have a Schmitt trigger function. As the circuit
More informationBA6840BFS / BA6840BFP-Y / BA6840BFP / BA6842BFS
3-phase motor driver BA6840BFS / BA6840BFP-Y / BA6840BFP / BA6842BFS The BA6840BFS, BA6840BFP-Y, BA6840BFP, and BA6842BFS are one-chip ICs designed for driving CD-ROM motors. They are high performance-ics
More informationInfrared light emitting diode, top view type
Infrared light emitting diode, top view type The has the response speed and luminous output necessary for image transmission in audio-visual applications. It can support almost all types of optical transmission
More informationQuad operational amplifier
Quad operational amplifier BA7 / BA7F The BA7 and BA7F are monolithic ICs with four operational amplifiers featuring internal phase compensation mounted on a single silicon chip. Either a dual or single
More informationDual high slew rate operational amplifier
Dual high slew rate operational amplifier BA6 / BA6F / BA6N The BA6, BA6F, and BA6N are dual operational amplifiers which achieve approximately twice the high output current of the BA, as well as featuring
More informationInfrared light emitting diode, top view type
Infrared light emitting diode, top view type The is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 9nm peak wavelength suitable for silicon
More informationHigh voltage, high current Darlington transistor array
BA2B / BA23B / BA23BF / BA24B High voltage, high current Darlington transistor array BA2B / BA23B / BA23BF / BA24B The BA2B, BA23B, BA23BF, and BA24B are high voltage, high current, high sustain voltage
More informationVideo signal switcher
Video signal switcher BA76N / BA76F The BA76N and BA76F are three-channel analog multiplexers with built-in mute, 6dB amplifier and 75Ω driver. The ICs designed for use in video cassette recorders, and
More informationVideo signal switcher
Video signal switcher BA76N / BA76F The BA76N and BA76F are three-channel analog multiplexers with built-in mute, 6dB amplifier and 7Ω driver. The ICs designed for use in video cassette recorders, and
More informationFM / TV front end BA4424N. Audio ICs
FM / TV front end The is a monolithic IC designed for FM front end use. It consists of an RF amplifier circuit, mixer circuit, local oscillation circuit, IF buffer amplifier, and a variable capacitor-diode
More informationMedium power transistor (60V, 0.5A)
Medium power traistor (, 0.5A) Features ) High speed switching. (Tf : Typ. : 80 at = 500mA) 2) Low saturation voltage, typically (Typ. : 75m at = ma, IB = ma) 3) Strong discharge power for inductive load
More informationReversible motor driver
Reversible motor driver The BA6209 and BA6209N are reversible-motor drivers suitable for brush motors. Two logic inputs allow three output modes : forward, reverse, and braking. The motor revolving speed
More informationSwitching ( 30V, 4.5A)
Switching ( 30V, 4.5) Features ) Low On-resistance. (57mΩ at 4.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive. (4.5V) External dimensions (Unit : mm) SOP8 0.4 (8) (5) () (4).27
More information4V Drive Nch MOS FET RHU002N06 RHU002N06. Transistors. Rev.B 1/4. External dimensions (Unit : mm) Structure Silicon N-channel MOS FET transistor
4 Drive Nch MOS FET Structure Silicon N-channel MOS FET traistor External dimeio (Unit : mm) UMT3 Features ) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4). 5) Drive
More informationDC-DC Converter ( 20V, 1.0A)
DC-DC Converter ( 20V,.0) Features ) Low on-resistance. (80mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) pplications DC-DC converter External dimensions (Unit
More informationSwitching (60V, 300mA)
Switching (60, 300mA)!Features ) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4). 5) Easily designed drive circuits. 6) Easy to use in parallel.!external dimeio (Units
More informationDatasheetArchive.com. Request For Quotation
DatasheetArchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative
More informationDC-DC Converter ( 20V, 4.0A)
DC-DC Converter ( 20V, 4.0)!Features ) Low on-resistance. (mω at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V)!External dimensions (Unit : mm) TSMT6 0.4 2.8.6 (3) ()
More informationSwitching ( 30V, 5.0A)
Switching ( 30V, 5.0) Features ) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). External dimensions (Unit : mm) SOP8 0.4 (8) (5) () (4).27 5.0 pplication
More information2.5V Drive Pch+Pch MOSFET
2.5V Drive Pch+Pch MOSFET Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TUMT6 Features ) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half.
More information16-bit stereo D / A converter for audio applications
6-bit stereo D / A converter for audio applications The is a 6-bit stereo D / A converter designed for audio applications, and has an internal 2 oversampling circuit. Applications 6-bit stereo D / A converter
More information4V Drive Nch+SBD MOSFET
4 Drive Nch+SBD MOSFET Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions ( : mm) TUMT5 2. Features ) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching,
More information2.5V Drive Pch MOS FET
2.5V Drive Pch MOS FET Features ) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). External dimensions (Unit : mm) TSMT3.0MX 2.9 0.85 0.4 0.7 (3) pplication
More information2.5V Drive Pch MOS FET
2.5V Drive Pch MOS FET Structure Silicon P-channel MOS FET Features ) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). External dimensions (Unit : mm) TSMT3
More informationSwitching SP8M3 SP8M3. Transistors. External dimensions (Unit : mm)
Switching Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). External dimensions (Unit : mm) SOP8 5.±.2 (5) (8) pplication Power switching, DC /
More information2.5V Drive Nch+SBD MOSFET
2.5 Drive Nch+SBD MOSFET US5U US5U Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions ( : mm) TUMT5 2.0 Features ) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2)
More informationCPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN CPH61 CPH61 Features NPN / PNP Epitaxial Planar Silicon Transistors Video Output Driver,High-Frequency Amplifier Applications Composite type with NPN transistor and PNP transistor
More information4V Drive Nch MOS FET RSS085N05 RSS085N05. Transistor 1/4. Structure Silicon N-channel MOS FET. External dimensions (Unit : mm)
4V Drive Nch MOS FET Sucture Silicon N-channel MOS FET External dimensions (Unit : mm) SOP8 5.0 0.4.75 Features ) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (8) (5) () (4)
More informationCircuit protection elements
Circuit protection elements IC protector Circuit protection elements Rohm s circuit protectors have a very reliable current cut-off capability that protects ICs and their circuits from accidental short
More information2.5V Drive Pch MOS FET
2.5V Drive Pch MOS FET Structure Silicon P-channel MOS FET Features ) Low on-resistance. (90mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) External dimensions
More information4V+2.5V Drive Nch+Pch MOSFET
4V+2.5V Drive Nch+Pch MOSFET US6M US6M Sucture Silicon N-channel / P-channel MOSFET Dimensions (Unit : mm) TUMT6 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package
More informationMidium Power Transistors (±50V / ±3A)
Midium Power Transistors (±50V / ±3A) MP6Z3 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features ) Low saturation voltage, typically V CE (sat) = 0.35V (Max.)
More information2SA2016 / 2SC5569 2SA2016 / 2SC5569. Applications. Features. Specifications ( ) : 2SA2016. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN69B SA16 / SC69 SA16 / SC69 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption
More informationBP5232A25/BP5232A33/BP5233A33/BP5234A33 Power Module BP5232A25 / BP5232A33 / BP5233A33 / BP5234A33
BP55/BP5/BP5/BP5 Power Module DC / DC converter BP55 / BP5 / BP5 / BP5 The BP55, BP5, BP5 and BP5 are DC / DC converters that use PWM system and FM system. They contain control circuits, switching devices
More informationDATA SHEET AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
DATA SHEET SILICON TRANSISTOR SC6 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES High DC Current Gain: hfe = TYP. (VCE = 6. V, IC =. ma) High Voltage: VCEO
More informationunit:mm 2009B Tc=25 C V V
Ordering number:enn9d PNP/NPN Epitaxial Planar Silicon Transistors SA9/SC911 16/14mA High- Switching and AF W Predriver Applications Features Adoption of FBET process. High breakdown voltage. Good linearity
More informationMCH6101 / MCH6201 MCH6101 / MCH6201. Applications. Features. Specifications ( ) : MCH6101. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN68A PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT processes.
More information2SB1202/2SD Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection
Ordering number : EN11D SB/SD18 SANYO Semiconductors DATA SHEET SB/SD18 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET and MBIT processes Large
More informationTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: Cob = 2.5 pf (typ.) High Transition
More informationTaping code. Reel size (mm) 2SCR512P MPT T ,000 NB
2SCR52P NPN 2.0A 30 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 30 I C 2.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR52P
More informationSILICON TRANSISTOR 2SC4227
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4227 DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF
More informationDATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD SILICON TRANSISTOR SC957 FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre =
More informationTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Amplifier Applications Unit: mm Small collector output capacitance: C ob =.8 pf (typ.) High transition frequency: f T = 2 MHz
More information2SB1201/2SD Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA)
Ordering number : EN11C SB1/SD181 SANYO Semiconductors DATA SHEET SB1/SD181 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes
More informationDATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4226 DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF
More informationTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High
More informationDATA SHEET AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS
DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES Low VCE(sat) VCE(sat) = 5 V Max (@lc/lb = 1.0 A/50 ma) High DC Current Gain hef = 150
More informationHN1B01F HN1B01F. Audio-Frequency General-Purpose Amplifier Applications Q1: Q2: Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50
More information2SA1593/2SC4135. SANYO Semiconductors DATA SHEET 2SA1593/2SC4135. Applications. Specifications ( ): 2SA1593
Ordering number : EN11B SA19/SC41 SANYO Semiconductors DATA SHEET SA19/SC41 Applications Power supplies, relay derivers, lamp drivers Features Adoption of FBET, MBT processes High breakdown voltage and
More informationTOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3225. JEITA Storage temperature range T stg 55 to 150 C
2SC22 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC22 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm High DC current gain: h FE = (min) (I C = 4 ma) Low collector-emitter
More information2SA2099 / 2SC5888. Collector Dissipation Tc=25 C 25 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : EN1A SA99 / SC888 SANYO Semiconductors DATA SHEET SA99 / SC888 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications Relay drivers, lamp drivers,
More information2SC5645. unit : mm 2106A 0.3 3
Ordering number : ENN688 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features Low noise : NF=1.dB typ (f=ghz). High cutoff frequency : ft=ghz typ (VCE=).
More informationTaping code. Reel size (mm) 2SCR513P MPT T ,000 NC
2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3) Low CE(sat) CE(sat) =0.35(Max.) (I C /I B =500mA/25mA) 4) Lead Free/RoHS
More informationXN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Composite Transistors. For switching/digital circuits
Composite Transistors XN (XN) Silicon NPN epitaxial planar type (Tr) Silicon PNP epitaxial planar type (Tr) For switching/digital circuits Features Two elements incorporated into one package (Transistors
More informationTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328. JEITA Storage temperature range T stg 55 to 150 C
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC28 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: V CE (sat) =.5 V (max) (I C = A) High-speed
More informationHN1B04FU HN1B04FU. Audio Frequency General Purpose Amplifier Applications. Marking. Q1 Absolute Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: High voltage and high current
More informationTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428. JEITA Junction temperature T j 150 C
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1428 Power Amplifier Applications Power Switching Applications Unit: mm Low collector-emitter saturation voltage: V CE (sat) =.5 V (max) (I
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering
More informationTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) SC Audio Frequency Amplifier Applications Unit: mm Complementary to SA6 Small collector output capacitance: C ob =.8 pf (typ.) High transition
More information2.5V Drive Nch+Pch MOSFET
2.5V Drive Nch+Pch MOSFET Structure Silicon N-channel / P-channel MOSFET Dimensions (Unit : mm) TSMT6 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).
More information2SA1834 V CEO -20V I C -10A. Datasheet. PNP -10A -20V Middle Power Transistor. Outline. Parameter Value CPT3. Features
PNP -10A -20V Middle Power Transistor Datasheet Outline Features Parameter Value CPT3 V CEO -20V I C -10A 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5001 3) Low V CE(sat) V CE(sat)
More informationTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736. mw 1000 (Note 1)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: V CE (sat) =.5 V (max) (I C =.5 A) High speed
More informationSS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz
SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector
More informationQST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline
PNP -5A -30V Middle Power Transistor Datasheet Features Parameter 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QSX2 3) Low V CE(sat) V CE(sat) = -0.25V(Max.) (I C /I B = -2A / -40mA)
More information2SA1418/2SC3648. Bipolar Transistor. ( )160V, ( )0.7A, Low VCE(sat), (PNP)NPN Single PCP. Applicaitons Color TV audio output, inverter
Ordering number : EN188C SA1418/SC648 Bipolar Transistor ( )16V, ( ).A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT
More information(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
More information2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) =. V (max) (IC = A) High-speed switching
More informationTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213. mw 1000 (Note 1)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: V CE (sat) =.5 V (max) (I C = A) High speed
More informationTOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit: mm Low collector saturation voltage: V CE (sat) =.4 V (max) (I C = A) High speed switching
More information2.5V Drive Nch+Pch MOSFET
.V Drive Nch+Pch MOSFET EM6M EM6M Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) EMT6 Features ) Nch MOSFET and Pch MOSFET are put in EMT6 package. ) High-speed switching.
More informationTOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902. Unit PNP NPN V CEX V V CEO
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) Portable Equipment Applications Switching Applications.33±.5 8.5 M A 5 Unit: mm Small footprint due to small and thin package High DC current
More informationStrobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers
Ordering number : EN181B SD168 Bipolar Transistor V, A, Low VCE(sat), NPN Single PCP http://onsemi.com Applications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers Features
More informationIMH21 V CEO V EBO. 20V 12V 600mA 10k R 1. Datasheet. Outline. Parameter Tr1 and Tr2 SMT6
NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting. Datasheet Parameter Tr1 and Tr2 SMT6 V CEO V EBO I C R 1 20V 12V 600mA 10k Outline (3) (2) (1) (4) (5) (6) IMH21 SOT-457
More information2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications
Ordering number : EN18B SD18 Bipolar Transistor V, A, Low VCE(sat), NPN Single NP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption
More informationMCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6
Ordering number : EN8949A MCH641 Bipolar Transistor ( )V, ( )A, Low VCE(sat) Complementary Dual MCPH6 http://onsemi.com Applicaitons MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features
More informationLarge current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.
Ordering number : ENA18B SC6144SG Bipolar Transistor V, A, Low VCE(sat) NPN TO-F-FS http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current
More information2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C
Ordering number : EN066F SD1 Bipolar Transistor 1V, 0.A, Low VCE(sat), NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base
More information30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications
Ordering number : EN8A ACH Bipolar Transistor V,.A, Low VCE(sat) PNP Single CPH http://onsemi.com Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacitance
More informationEMY1 / UMY1N / FMY1A. Emitter common (dual transistors) Datasheet. Parameter Value SOT-553 SOT-353 V CEO -50V I C. -150mA
EMY1 / UMY1N / FMY1A Emitter common (dual transistors) Datasheet loutline Parameter Value SOT-553 SOT-353 V CEO -50V I C -150mA EMY1 UMY1N (EMT5) (UMT5) Parameter Value SOT-25
More informationHigh-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN811A MCH14/MCH4 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption
More information