General purpose transistor (dual transistors)

Transcription

1 General purpose transistor (dual transistors) Features 1) Both a SA37AK chip and SC41K chip in a EMT or UMT or SMT package. ) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Unit : mm) EMZ1 3 ROHM : EMT6 (6) (1) Structure NPN / PNP epitaxial planar silicon transistor UMZ1N (6) 1. (1).6 Equivalent circuit EMZ1 / UMZ1N Tr (1) Tr1 (6) Absolute maximum ratings (Ta = C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power EMZ1, UMZ1N dissipation Junction temperature Storage temperature 1 1mW per element must not be exceeded. mw per element must not be exceeded. Tr (6) Tr1 (1) Limits Symbol Unit Tr1 Tr CBO 6 6 CEO EBO 7 6 IC 1 1 ma 1 (TOTAL) 1 PC mw 3 (TOTAL) Tj 1 C Tstg to +1 C ROHM : UMT6 EIAJ : SC-88.3 ROHM : SMT6 EIAJ : SC-74 Min..3to.6 (6) to.8 to.1 (1) Rev.A 1/4

2 Electrical characteristics (Ta = C) Tr1 (NPN) Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BCBO 6 IC= Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency BCEO BEBO ICBO IEBO CE (sat) hfe ft MHz IC=1mA IE= CB=6 EB=7 IC/IB=mA/mA CE=6, IC=1mA CE=1, IE=mA, f=mhz Output capacitance Cob 3. PF CB=1, IE=A, f=1mhz Tr (PNP) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit Conditions BCBO BCEO BEBO ICBO IEBO CE (sat) hfe IC= IC=1mA IE= CB=6 EB=6 IC/IB=mA/mA CE=6, IC=1mA ft 14 MHz CE=1, IE=mA, f=mhz Cob 4 PF CB=1, IE=A, f=1mhz Packaging specifications Package Taping Code TR TR T8 Basic ordering Type unit (pieces) EMZ1 UMZ1N Electrical characteristic curves Tr1 (NPN) 1 Ta= C C C CE= Ta= C ma.4ma.4ma.3ma.3ma ma ma ma ma.ma IB=A Ta= C IB=A BASE TO EMITTER OLTAGE : BE () COLLECTOR TO EMITTER OLTAGE : CE () COLLECTOR TO EMITTER OLTAGE : CE () Fig.1 Grounded emitter propagation characteristics Fig. Grounded emitter output characteristics ( I ) Fig.3 Grounded emitter output characteristics ( II ) Rev.A /4

3 Ta= C CE= Ta= C CE= C C 1 COLLECTOR SATURATION OLTAGE : CE (sat) ()...1 IC/IB= Ta= C 1 Fig.4 DC current gain vs. collector current ( I ) Fig. DC current gain vs. collector current ( II ) Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) COLLECTOR SATURATION OLTAGE : CE (sat) ()...1 Ta= C C C IC/IB= 1 Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) COLLECTOR SATURATION OLTAGE : CE (sat) ()...1 Ta= C C C IC/IB= 1 Fig.8 Collector-emitter saturation voltage vs. collector current ( III ) TRANSITION FREQUENCY : ft (MHz) Ta= C CE=6 1 Fig.9 Gain bandwidth product vs. COLLECTOR OUTPUT CAPACITANCE : Cob (pf) EMITTER INPUT CAPACITANCE : Cib (pf) 1 Cib Cob Ta= C f=1mhz IE=A IC=A 1 COLLECTOR TO BASE OLTAGE : CB () EMITTER TO BASE OLTAGE : EB () Fig. Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) 1 Ta= C f=3mhz CB=6 Fig.11 Base-collector time constant vs. Rev.A 3/4

4 Tr (PNP) COLLECTOR CURRENT : Ic (ma) 1 Ta= C C 4 C CE= BASE TO EMITTER OLTAGE : BE () Fig.1 Grounded emitter propagation characteristics Ta= C IB= COLLECTOR TO EMITTER OLTAGE : CE () Fig.13 Grounded emitter output characteristics ( I ) Ta= C IB= COLLECTOR TO EMITTER OLTAGE : CE () Fig.14 Grounded emitter output characteristics ( II ) Ta= C CE= Ta= C C 4 C CE=6 1 COLLECTOR SATURATION OLTAGE : CE (sat) () 1 Ta= C IC/IB=. 1 Fig.1 DC current gain vs. collector current ( I ) Fig.16 DC current gain vs. collector current ( II ) Fig.17 Collector-emitter saturation voltage vs. collector current ( I ) COLLECTOR SATURATION OLTAGE : CE (sat) () 1. Ta= C C 4 C lc/lb= 1 Fig.18 Collector-emitter saturation voltage vs. collector current ( II ) TRANSITION FREQUENCY : ft (MHz) 1 Ta= C CE=1 Fig.19 Gain bandwidth product vs. COLLECTOR OUTPUT CAPACITANCE : Cob (pf) EMITTER INPUT CAPACITANCE : Cib (pf) Cib Cob Ta= C f=1mhz IE=A IC=A COLLECTOR TO BASE OLTAGE : CB () EMITTER TO BASE OLTAGE : EB () Fig. Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 4/4

5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1