4V Drive Nch MOS FET RSS085N05 RSS085N05. Transistor 1/4. Structure Silicon N-channel MOS FET. External dimensions (Unit : mm)

Transcription

1 4V Drive Nch MOS FET Sucture Silicon N-channel MOS FET External dimensions (Unit : mm) SOP Features ) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (8) (5) () (4) pin mark Min. Applications Power switching, DC / DC converter, Inverter Each lead has same dimensions Packaging dimensions Package Type Code Basic ordering unit (pieces) Taping TB 2500 Absolute maximum ratings (Ta=25 C) Symbol Limits Unit Drain-source voltage V DSS 45 V Gate-source voltage V GSS 20 V Drain current Continuous I D ±8.5 A Pulsed I DP * ±34 A Source current Continuous I S.6 A ( Body diode) Pulsed I SP * 34 A Total power dissipation P D *2 2 W Chanel temperature T ch 50 o C Range of Storage temperature T stg -55 to +50 o C * PW µs Duty cycle % *2 Mounted on a ceramic board Equivalent circuit (8) (7) (6) (5) 2 () (2) (3) ESD Protection Diode. 2 Body Diode. (8) (7) (6) (5) () (2) (3) (4) () Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain A protection diode is included between the gate and the source terminals to protect the diode against static elecicity when the product is in use.use a protection circuit when the fixed voltage are exceeded. (4) Thermal resistance Chanel to ambient * Mounted on a ceramic board Symbol Limits Unit R th(ch-a) * 62.5 o C/W /4

2 Elecical characteristics (Ta=25 C) Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward ansfer admittance Input capacitance Output capacitance Reverse ansfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Symbol IGSS V(BR) DSS IDSS (th) RDS (on) Yfs Ciss Coss Crss td (on) td (off) tf Qg Qgs Qgd Min. Typ. Max. Unit Conditions µa =20V, =0V 45 V ID= ma, =0V µa = 45V, =0V V = V, ID= ma 3 8 mω ID= 8.5A, = V 6 23 mω ID= 8.5A, = 4.5V 8 25 mω ID= 8.5A, = 4V 7.0 S = V, ID= 8.5A 500 pf = V 350 pf =0V 70 pf f=mhz 9 ns VDD 25V 25 ns ID= 4.0A = V 7 ns RL=6.3Ω 24 ns RG=Ω nc VDD 25V = 5V 4.4 nc ID= 8.5A 6.0 nc RL=2.9Ω RG=Ω Body diode characteristics (Source-Drain) (Ta=25 C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD.2 V IS= 8.5A, =0V Pulsed 2/4

3 Elecical characteristic curves ] Drain Currnt : I D [A] 0. Ta= V DS =V 00 0 V GS =V Ta= 00 0 V GS =4.5V Ta= Gate-Source Voltage : V GS [V] Fig. Typical Transfer Characteristics Fig.2 Resistance vs. Drain Current () Fig.3 Resistance vs. Drain Current (2) 00 0 V GS =4V Ta= I D =8.5A Ta= Source Current : Is [A] Ta= V GS=0V I D =4.75A Gate-Source Voltage : V GS [V] Source-Drain Voltage : V SD [V] Fig.4 Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source-Current vs. Source-Drain Voltage Capacitance : C [pf Ta= f=mhz =0V Ciss Coss Crss Switching Time : t [ns] kkk td(off) td(on) tf Ta= V DD =25V V GS =V R G =Ω Pulsed Gate-Source Voltage : [V] kk 5 Ta= VDD=25V ID=8.5A RG=Ω Pulsed Drain-Source Voltage : [V] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Total Gate Charge : Qg [nc] Fig.9 Dynamic Input Characteristics 3/4

4 Measurement circuits Pulse Width ID RL 50% % 90% 50% RG D.U.T. % % VDD 90% 90% td(on) td(off) ton toff Fig. Switching Time Test Circuit Fig. Switching Time Waveforms VG ID Qg IG (Const.) RG D.U.T. RL Qgs Qgd VDD Charge Fig.2 Gate Charge Test Circuit Fig.3 Gate Charge Waveform 4/4

5 Appendix Notes No technical content pages of this document may be reproduced in any form or ansmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illusations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or conolled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary eleconic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, elecical appliances and eleconic toys). Should you intend to use these products with equipment or devices which require an exemely high level of reliability and the malfunction of with would directly endanger human life (such as medical insuments, ansportation equipment, aerospace machinery, nuclear-reactor conollers, fuel conollers and other safety devices), please be sure to consult with our sales representative in advance. About Export Conol Order in Japan Products described herein are the objects of conolled goods in Annex (Item 6) of Export Trade Conol Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all conols for Non-Proliferation of Weapons of Mass Desuction. Appendix-Rev.