Medium power transistor (60V, 0.5A)
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1 Medium power traistor (, 0.5A) Features ) High speed switching. (Tf : Typ. : 80 at = 500mA) 2) Low saturation voltage, typically (Typ. : 75m at = ma, IB = ma) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 Applicatio Small signal low frequency amplifier High speed switching Dimeio (Unit : mm) TSMT (2) () () Base (2) Emitter (3) Collector Each lead has same dimeio Abbreviated symbol : S 0 0. (3) MAX Structure NPN Silicon epitaxial planar traistor Packaging specificatio Type Package Code Basic ordering unit (pieces) Taping TL 3000 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage CBO Collector-emitter voltage CEO Emitter-base voltage EBO 6 Collector current Power dissipation DC Pulsed P PC A A mw 2 Junction temperature Tj 50 C Range of storage temperature 55 to 50 C Pw=ms 2 Each terminal mounted on a recommended land / Rev.A
2 Data Sheet Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Condition Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Traition frequency Corrector output capacitance Turn-on time Storage time Fall time BCEO BCBO BEBO BO IEBO CE (sat) hfe ft Cob Ton Tf Non repetitive pulse 2 See Switching charactaristics measurement circuits μa μa m MHz pf =ma =μa IE=μA CB=40 EB=4 =ma IB=mA CE=2 =50mA CE= IE= ma f=mhz CB= IE=0mA f=mhz =500mA IB=50mA IB2= 50mA CC 25 2 hfe RANK Q R Electrical characteristic curves SWITCHING TIME : () Tf Ton CC=25 / IB= / DC CURRENT GAIN : hfe Ta= 40 C CE=2 DC CURRENT GAIN : hfe CE=5 CE=3 CE= COLLECTOR CURRENT : (A) Fig. Switching Time COLLECTOR CURRENT : (A) Fig.2 DC Current Gain vs. Collector Current (Ι) COLLECTOR CURRENT : (A) Fig.3 DC Current Gain vs. Collector Current (ΙΙ) / IB= / / IB= / COLLECTOR SATURATION OLTAGE : CE (sat) () 0. Ta= 40 C COLLECTOR SATURATION OLTAGE : CE (sat) () 0. / IB=20 / / IB= / BASE EMITTER SATURATION OLTAGE : BE (sat) () 0. Ta= 40 C COLLECTOR CURRENT : (A) Fig.4 Collector-Emitter Saturation oltage vs. Collector Current (Ι) COLLECTOR CURRENT : (A) Fig.5 Collector-Emitter Saturation oltage vs. Collector Current (ΙΙ) COLLECTOR CURRENT : (A) Fig.6 Base-Emitter Saturation oltage vs. Collecter Current 2/ Rev.A
3 Data Sheet COLLECTOR CURRENT : (A) 0. Ta= 40 C CE= BASE TO EMITTER OLTAGE : BE () Fig.7 Grounded Emitter Propagation Characteristics TRANSITION FREQUENCY : ft (MHz) CE= EMITTER CURRENT : IE (A) Fig.8 Traition Frequency COLLECTOR OUTPUT CAPACITANCE : Cob (pf) f=mhz 0. BASE TO COLLECTOR OLTAGE : CB () Fig.9 Collector Output Capacitance Switching characteristics measurement circuits IN IB RL=50Ω PW PW 50 S Duty cycle % IB2 CC 25 IB Base current waveform IB2 90% Collector current waveform % Ton Tf 3/ Rev.A
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EMY1 / UMY1N / FMY1A Emitter common (dual transistors) Datasheet loutline Parameter Value SOT-553 SOT-353 V CEO -50V I C -150mA EMY1 UMY1N (EMT5) (UMT5) Parameter Value SOT-25
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198. JEITA Storage temperature range T stg 55 to 150 C
TOSHIBA Transistor Silicon NPN Triple Diffused Type SC598 Power Amplifier Applications Unit: mm High breakdown voltage: V CEO = 0 V (min) Complementary to SA9 Suitable for use in 70-W high fidelity audio
2SA2066 2SA2066. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA266 High-Speed Switching Applications DC-DC Converter Applications Unit: mm High DC current gain: hfe = 2 to 5 (IC =.2 A) Low collector-emitter saturation
2SB1201/2SD Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA)
Ordering number : EN11C SB1/SD181 SANYO Semiconductors DATA SHEET SB1/SD181 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes
FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V CEO =80V; R SAT = 90m ;I C = 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure
Maintenance/ Discontinued
Small Signal Transistor Arrays UNA225 (UN225) Silicon PNP epitaxial planar type (4 elements) Silicon NPN epitaxial planar type (4 elements) For motor drives Features Small and lightweight Low power consumption
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive
Low-frequency Amplifer, high-speed switching small motor drive, muting circuit
Ordering number : EN16A CMH Bipolar Transistor V,.A, Low VCE(sat) NPN Single MCPH http://onsemi.com Applications Low-frequency Amplifer, high-speed switching small motor drive, muting circuit Features
SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at collector
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C
Ordering number : EN066F SD1 Bipolar Transistor 1V, 0.A, Low VCE(sat), NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1508
2SD8 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD8 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit:
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS SOT-223 SOT-89 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92 TO-92NL TO-26C TO-26 TO- TO-2
Bias Resistor Transistor
SEMICONDUCTOR TECHNICAL DATA DTC ~ 8 DTC ~ / /7 DTC / Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328. JEITA Storage temperature range T stg 55 to 150 C
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC28 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: V CE (sat) =.5 V (max) (I C = A) High-speed
M54516P MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY
-UNIT DARLINGTON TRANSISTOR ARRAY DESCRIPTION is five-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving
2SC3657 2SC3657. Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)
SC67 TOSHIBA Transistor Silicon NPN Triple Diffused Type SC67 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications Unit: mm Excellent switching times: tr
2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications
Ordering number : EN18B SD18 Bipolar Transistor V, A, Low VCE(sat), NPN Single NP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption