Part Number Order Number Package Quantity Supplying Form. (Pb-Free)
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1 <R> NESGM NPN SiGe RF Transistor for Low Noise, High-in Amplification Flat-Lead -Pin Thin-Type Super Minimold (M) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications. =.8 db TYP., = 7. db V CE = V, I C = ma, f = GHz =. db TYP., G a =. db V CE = V, I C = ma, f =. GHz Maximum stable power gain: =. db V CE = V, I C = ma, f = GHz High breakdown voltage technology for SiGe Tr. adopted: V CEO (absolute maximum ratings) =. V Flat-lead -pin thin-type super minimold (M) package ORDERING IORMATION Data Sheet Part Number Order Number Package Quantity Supplying Form NESGM NESGM-A Flat-lead -pin thintype pcs 8 mm wide embossed supper minimold (Non reel) taping NESGM-T NESGM-T-A (M, PKG) (Pb-Free) kpcs/reel Pin (Collector), Pin (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is pcs. ABSOLUTE MAXIMUM RATINGS (T A = + C) Parameter Symbol Ratings Unit Collector to Base Voltage V CBO. V Collector to Emitter Voltage V CEO. V Emitter to Base Voltage V EBO. V Collector Current I C ma Total Power Dissipation Note P tot 7 mw Junction Temperature T j C Storage Temperature T stg to + C Note: Mounted on.8 cm. mm (t) glass epoxy PCB CAUTION R9DSEJ Rev.. Jun, Observe precautions when handling because these devices are sensitive to electrostatic discharge. R9DSEJ Jun, Rev.. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Page of
2 NESGM <R> <R> ELECTRICAL CHARACTERISTICS (T A = + C) DC Characteristics Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current I CBO V CB = V, I E = na Emitter Cut-off Current I EBO V EB = V, I C = na DC Current in Note h FE V CE = V, I C = ma 9 RF Characteristics in Bandwidth Product f T V CE = V, I C = ma, f = GHz GHz Insertion Power in S e V CE = V, I C = ma, f = GHz. 8. db Noise Figure () V CE = V, I C = ma, f = GHz,.8. db Z S = Z Sopt, Z L = Z Lopt Noise Figure () V CE = V, I C = ma, f =. GHz,. db Z S = Z Sopt, Z L = Z Lopt Associated in () G a V CE = V, I C = ma, f = GHz,. 7. db Z S = Z Sopt, Z L = Z Lopt Associated in () G a V CE = V, I C = ma, f =. GHz,. db Z S = Z Sopt, Z L = Z Lopt Reverse Transfer Capacitance C re Note V CB = V, I E =, f = MHz.. pf Maximum Stable Power in Note V CE = V, I C = ma, f = GHz 9.. db in db Compression Output Power rd Order Intermodulation Distortion Output Intercept Point P O ( db) OIP Notes:. Pulse measurement: PW μs, Duty Cycle %. Collector to base capacitance when the emitter grounded. = h FE CLASSIFICATION Rank Marking S S FB/YFB TH h FE Value to V CE = V, I C = ma, f = GHz, dbm Z S = Z Sopt, Z L = Z Lopt V CE = V, I C = ma, f = GHz, dbm Z S = Z Sopt, Z L = Z Lopt R9DSEJ Jun, Rev.. Page of
3 NESGM TYPICAL CHARACTERISTICS (T A = + C, unless otherwise specified) Total Power Dissipation Ptot (mw) 7 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass Epoxy PCB (.8 cm. mm (t) ) VCE = V Ambient Temperature TA ( C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Base to Emitter Voltage VBE (V) Reverse Transfer Capacitance Cre (pf)... REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = MHz Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = V Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector to Emitter Voltage VCE (V) μa 8 μa μa μa μa μa 8 μa μa μa IB = μa R9DSEJ Jun, Rev.. Page of
4 NESGM DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = V DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = V DC Current in hfe DC Current in hfe.. DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current in hfe. R9DSEJ Jun, Rev.. Page of
5 NESGM in Bandwidth Product ft (GHz) in Bandwidth Product ft (GHz) Insertion Power in Se (db) GAIN BANDWIDTH PRODUCT VCE = V f = GHz GAIN BANDWIDTH PRODUCT f = GHz INSERTION POWER GAIN,, vs. FREQUENCY Se VCE = V IC = ma. Frequency f (GHz) in Bandwidth Product ft (GHz) Insertion Power in Se (db) Insertion Power in Se (db) GAIN BANDWIDTH PRODUCT VCE = V f = GHz INSERTION POWER GAIN,, vs. FREQUENCY Se Frequency f (GHz) VCE = V IC = ma. INSERTION POWER GAIN,, vs. FREQUENCY Se Frequency f (GHz) IC = ma. R9DSEJ Jun, Rev.. Page of
6 NESGM Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN,, VCE = V f = GHz Se INSERTION POWER GAIN,, VCE = V f = GHz Se INSERTION POWER GAIN, VCE = V f = GHz Se Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN,, VCE = V f = GHz Se INSERTION POWER GAIN, VCE = V f = GHz Se INSERTION POWER GAIN,, VCE = V f = GHz Se R9DSEJ Jun, Rev.. Page of
7 NESGM Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN,, VCE = V f = GHz Se INSERTION POWER GAIN, f = GHz Se INSERTION POWER GAIN,, f = GHz Se Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN,, f = GHz Se INSERTION POWER GAIN, f = GHz INSERTION POWER GAIN, VCE = V f = GHz Se Se R9DSEJ Jun, Rev.. Page 7 of
8 NESGM Output Power Pout (dbm) Output Power Pout (dbm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER, f = GHz Icq = ma (RF OFF) Pout Input Power Pin (dbm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER, f = GHz Icq = ma (RF OFF) Pout Input Power Pin (dbm) IC IC Output Power Pout (dbm) Output Power Pout (dbm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER, f = GHz Icq = ma (RF OFF) Pout IC Input Power Pin (dbm) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER, f =. GHz Icq = ma (RF OFF) Input Power Pin (dbm) Pout IC R9DSEJ Jun, Rev.. Page 8 of
9 NESGM VCE = V f = GHz VCE = V f = GHz VCE = V f =. GHz 8 Associated in (db) Associated in (db) Associated in (db) VCE = V f = GHz VCE = V f = GHz VCE = V f =. GHz 8 Associated in (db) Associated in (db) Associated in (db) R9DSEJ Jun, Rev.. Page 9 of
10 NESGM f = GHz f = GHz f =. GHz Remark 8 Associated in (db) Associated in (db) Associated in (db) The graphs indicate nominal characteristics. R9DSEJ Jun, Rev.. Page of
11 NESGM <R> S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (SP) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] [RF Devices] [Device Parameters] URL R9DSEJ Jun, Rev.. Page of
12 NESGM PACKAGE DIMENSIONS <R> FLAT-LEAD -PIN THIN-TYPE SUPER MINIMOLD (M, PKG) (UNIT: mm).±...9±. (.). PIN CONNENTION. Base. Emitter. Collector. Emitter (Top View).±..±. TH Remark ( ) : Reference value (Bottom View) (.) R9DSEJ Jun, Rev.. Page of
13 Revision History NESGM Data Sheet Description Rev. Date Page Summary Sep Previous No. : PU89EJVDS. Jun, p. Modification of ORDERING IORMATION p. Modification of ELECTRICAL CHARACTERISTICS Modification of h FE CLASSIFICATION p. Modification of S-PARAMETERS p. Modification of PACKAGE DIMENSIONS All trademarks and registered trademarks are the property of their respective owners. C -
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DATA SHEET MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD. face to perforation side of the tape.
DATA SHEET FEATURES Low Noise, High Gain Operable at Low Voltage Small Feed-back Capacitance Cre =. pf TYP. Built-in Transistors ( SC959) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE µpa86t
NEC's NPN SILICON TRANSISTOR. ñ EIAJ 1 REGISTERED NUMBER PACKAGE OUTLINE
FEATURES NEW MINIATURE M PACKAGE: Small transistor outline. X. X. mm Low profile /. mm package height Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: ft = GHz LOW NOISE FIGURE: =.
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package
AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is
3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form C3V
BIPOLAR ANALOG INTEGRATED CIRCUIT μpc3239tb 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μpc3239tb is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB.
BFP620. Low Noise SiGe:C Bipolar RF Transistor
Low Noise SiGe:C Bipolar RF Transistor Highly linear low noise RF transistor Provides outstanding performance for a wide range of wireless applications Based on Infineon's reliable high volume Silicon
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Product description The BFP8ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for. -. GHz LNA applications. Feature list Unique combination
Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411
Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-111 Features Low Noise Figure: 1. db Typical at 1. GHz 1.8 db Typical at 2. GHz High Associated Gain: 18. db Typical at 1. GHz
RF-amplifier up to GHz range specially for wide band antenna amplifier.
Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. RF-amplifier up to GHz range specially for wide band antenna amplifier. Features High power
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.45 db TYP., Ga =
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor For IF amplifiers in TVsat tuners and for VCR modulators Pbfree (RoHS compliant) package 1) Qualified according AEC Q101 1 2 ESD (Electrostatic discharge) sensitive device, observe
BFR93A/BFR93AR/BFR93AW. Silicon NPN Planar RF Transistor. Vishay Semiconductors. Applications. Features. Absolute Maximum Ratings
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features High power gain High transition frequency Low
Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor Low noise amplifier designed for low voltage applications, ideal for. V or. V supply voltage Common e.g. in cordless phones, satellite receivers and oscillators
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA. SOT-89 *Pb-free plating
techniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC26 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: V CE (sat) =. V (max)
Obsolete Product(s) - Obsolete Product(s)
MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
Silicon Bipolar High f T Low Noise Medium Power 12 Volt Transistors
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Features Low Phase Noise Oscillator Transistor mw Driver Amplifier Transistor Operation to GHz Available as Available in Hermetic Surface
NSVF5501SK RF Transistor for Low Noise Amplifier
RF Transistor for Low Noise Amplifier 10 V, 70 ma, f T =. GHz typ. RF Transistor This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because
Type Marking Pin Configuration Package BFP540 ATs 1=B 2=E 3=C 4=E - - SOT343
BFP Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding G ms =. at.8 GHz Minimum noise figure NF min =.9 at.8 GHz Pbfree (RoHS compliant) and halogenfree package
TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W
TPC69 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC69 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm NPN and PNP transistors are mounted on a compact and slim
Part Ordering code Marking Remarks Package BFR90A BFR90AGELB-GS08 BFR90A Packed in Bulk TO-50(3)
Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1
DATA SHEET NE68119 / 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION DATA SHEET SILICON TRANSISTOR NE68119 / SC7 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD The NE68119 / SC7 is an NPN epitaxial silicon transistor designed for use in low noise
BFQ67 / BFQ67R / BFQ67W
Not for new design, this product will be obsoleted soon Silicon NPN Planar RF Transistor BFQ67 / BFQ67R / BFQ67W Features Small feedback capacitance Low noise figure High transition frequency Lead (Pb)-free
NPN SILICON RF TWIN TRANSISTOR
FEATURES LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE:. mm x.8 mm LOW HEIGHT PROFILE: Just. mm high TWO LOW NOISE OSCILLATOR TRANSISTORS: NE8 IDEAL FOR - GHz OSCILLATORS DESCRIPTION The contains
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
NSVF4017SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ.
RF Transistor for Low Noise Amplifier 1 V, 0 ma, f T = GHz typ. This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment
Type Marking Pin Configuration Package BFR380F FCs 1 = B 2 = E 3 = C TSFP-3
Linear Low Noise Silicon Bipolar RF Transistor High linearity low noise driver amplifier Output compression point 9.5 m @.8 GHz Ideal for oscillators up to 3.5 GHz Low noise figure. at.8 GHz Collector
UNISONIC TECHNOLOGIES CO., LTD MPSA92/93
UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High
MMBT2222A SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY
DATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD
DATA SHEET The µpa801t has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1. db TYP. @ f = 1 GHz,, IC = 7 ma High Gain
Silicon NPN Planar RF Transistor
Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise applications such as preamplifiers, mixers and oscillators in analog and digital
DATA SHEET NE68019 / 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION DATA SHEET The NE6819 / SC8 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current
DATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The PA8T has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1.9 db TYP. @ f = GHz, VCE = 1 V, IC = ma High Gain S1e =
Part Number Order Number Package Marking Supplying Form PD5750T7D-E4A PD5750T7D-E4A-A 6-pin WLBGA (T7D) (Pb-Free)
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function DESCRIPTION Data Sheet The PD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application.
General Purpose Transistors
General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and
2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm High DC current gain: hfe = 4 to (IC =.5 A) Low collector-emitter
4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
DESCRIPTION SILICON POWER MOS FET NE5500234 4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS The NE5500234 is an N-channel silicon power MOS FET specially designed
DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION DATA SHEET SILICON TRANSISTOR NE68519 / 2SC51 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD The NE68519 / 2SC51 is an NPN epitaxial silicon transistor designed for use in low
LMUN2211LT1 SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
DATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The PA8T has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1. db TYP. @ f = 1 GHz,, IC = 7 ma High Gain S1e = 1 db TYP.