NPN SILICON RF TWIN TRANSISTOR
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1 FEATURES LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE:. mm x.8 mm LOW HEIGHT PROFILE: Just. mm high TWO LOW NOISE OSCILLATOR TRANSISTORS: NE8 IDEAL FOR - GHz OSCILLATORS DESCRIPTION The contains two NE8 high frequency silicon bipolar chips. The NE8 is an excellent oscillator chip, featuring low /f noise and high immunity to pushing effects. The new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications. ELECTRICAL CHARACTERISTICS (TA = C) Q And Q PART NUMBER PACKAGE OUTLINE NPN SILICON RF TWIN TRANSISTOR SILICON TRANSISTOR OUTLINE DIMENSIONS (Units in mm) ±. Package Outline TD (TOP VIEW).± KP.± ORDERING INFORMATION C E C TD (Top View) Q Q 4 B E B PIN CONNECTIONS. Collector (Q). Emitter (Q). Collector (Q) 4. Base (Q). Emitter (Q). Base (Q) PART NUMBER QUANTITY PACKAGING -T-A K Pcs./Reel Tape & Reel SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = V, IE = na IEBO Emitter Cutoff Current at VEB = V, IC = na hfe DC Current Gain at VCE = V, IC = 7 ma 4 ft Gain Bandwidth at VCE = V, IC = ma, f = GHz GHz.. Cre Feedback Capacitance at VCB = V, IE =, f = MHz pf.. 8 SE Insertion Power Gain at VCE = V, IC = ma, f = GHz db. 4. S SE E Insertion Power GainIat VCE = V, IC = ma, f = GHz db 4.. NF Noise Figure at VCE = V, IC = ma, f = GHz db.9. Notes:. Pulsed measurement, pulse width μs, duty cycle %.. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter.
2 ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V TYPICAL PERFORMANCE CURVES (TA = C) Total Power Dissipation, Ptot (mw)... TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Elements 9 8 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = V Element Mounted on Glass Epoxy PCB (.8 cm x. mm (t) ) 7 Ambient Temperature, TA ( C) Q Q 9 9 VCEO Collector to Emitter Voltage V.. VEBO Emitter to Base Voltage V.. IC Collector Current ma PT Total Power Dissipation mw 9 for element for elements TJ Junction Temperature C TSTG Storage Temperature C - to + Note:. Operation in excess of any one of these parameters may result in permanent damage.. Mounted on.8cm x. mm(t) glass epoxy substrate. Noise Figure, NF (db) Reverse Transfer Capacitance, Cre (pf) REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE... NOISE FIGURE, ASSOCIATED GAIN VCE = V f = GHz Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = V f = MHz Ga NF 8 9 Associated Gain, Ga (db) Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V)
3 TYPICAL PERFORMANCE CURVES (TA = C) DC Current Gain, HFE Insertion Power Gain, Se (db) Maximum Stable Gain, MSG(dB) 4 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 4 µa µa µa 8 µa 4 µa µa µa µa 8 µa IB = 4 µa Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN VCE = V. INSERTION POWER GAIN,, MSG vs. FREQUENCY MSG Se Frequency, f (GHz) VCE = V IC = ma. Insertion Power Gain, Se (db) Maximum Stable Gain, MSG(dB) Gain Bandwidth Product, ft (GHz) DC Current Gain, HFE 8 4 GAIN BANDWIDTH PRODUCT VCE = V f = GHz DC CURRENT GAIN VCE = V. INSERTION POWER GAIN,, MSG vs. FREQUENCY Frequency, f (GHz) VCE = V IC = ma MSG Se.
4 TYPICAL PERFORMANCE CURVES (TA = C) Insertion Power Gain, Se (db) Maximum Stable Gain, MSG(dB) Insertion Power Gain, Se (db) Maximum Stable Gain, MSG(dB) Noise Figure, NF (db) INSERTION POWER GAIN,, MSG vs. FREQUENCY MSG Se Frequency, f (GHz) VCE = V IC = ma. INSERTION POWER GAIN,, MSG VCE = V f = GHz - 4 Se NOISE FIGURE, ASSOCIATED GAIN VCE = V f = GHz Ga NF 8 9 Associated Gain, Ga (db) Insertion Power Gain, Se (db) Maximum Stable Gain, MSG(dB) Insertion Power Gain, Se (db) Noise Figure, NF (db) INSERTION POWER GAIN,, MSG VCE = V f = GHz MSG Se INSERTION POWER GAIN,, MSG VCE = V f = GHz - Se NOISE FIGURE, ASSOCIATED GAIN 8 VCE = V f = GHz 4 Ga 9 NF Associated Gain, Ga (db)
5 TYPICAL SCATTERING PARAMETERS j -j j S -j S Q j -j j -j Q VCE = V, IC = ma Frequency S S S S K GHz ANG ANG ANG ANG (db) º S +8º -º S Q +9º -9º S +4º º Note:. Gain Calculations: = S (K ± K - ). When K, is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S = Maximum Available Gain MSG = Maximum Stable Gain -4º
6 TYPICAL SCATTERING PARAMETERS j -j j S -j S Q j -j j -j Q VCE = V, IC = ma Frequency S S S S K GHz ANG ANG ANG ANG (db) º S +8º -º S Q +9º -9º S +4º º Note:. Gain Calculations: = S (K ± K - ). When K, is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S = Maximum Available Gain MSG = Maximum Stable Gain -4º
7 TYPICAL SCATTERING PARAMETERS j -j j -j S Q j S -j j -j Q VCE = V, IC = ma Frequency S S S S K GHz ANG ANG ANG ANG (db) º +º -º S Q +9º -9º S +4º º Note:. Gain Calculations: = S (K ± K - ). When K, is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S = Maximum Available Gain MSG = Maximum Stable Gain -4º
8 TYPICAL SCATTERING PARAMETERS j -j j -j S Q j S -j j -j Q VCE = V, IC = ma Frequency S S S S K GHz ANG ANG ANG ANG (db) º +º -º S Q +9º -9º S +4º º Note:. Gain Calculations: = S (K ± K - ). When K, is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S = Maximum Available Gain MSG = Maximum Stable Gain -4º
9 NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS () Parameters Q Q Parameters Q Q IS 7e-8 7e-8 MJC.4.4 BF XCJC.. NF CJS VAF.4.4 VJS.7.7 IKF MJS ISE 8.4e- 8.4e- FC.. NE.4.4 TF 8e- 8e- BR XTF.. NR VTF VAR.7.7 ITF.. IKR.. PTF ISC e-8 e-8 TR.e-9.e-9 NC.8.8 EG.. RE.4.4 XTB RB 4 4 XTI RBM KF* IRB AF*. RC.7.7 CJE.4e-.4e- VJE MJE.4.4 CJC.e-.e- VJC.. () Gummel-Poon Model * Set to default value. AF and KF are /f noise parameters and are bias dependent. The appropriate values for the /f noise parameters (AF and KF) shall be chosen from the table below, according to the desired current range. Ic = ma Ic = ma Ic = ma KF 4.47e- 8e-.7e-9 AF.4.. For a better understanding on AF and KF parameters, please refer to AN. MODEL RANGE Frequency:. to. GHz Bias: VCE =. V to V, IC = ma to ma Date: 4/
10 SCHEMATIC Pin_ Pin_ Pin_ LC_P. nh.7 nh C_CE. pf LE_P. nh LC_P. nh CCE. pf LE. nh C_EC. pf LC.7 nh LC CCB. pf CCE CCBPKG. pf C_CB. pf. pf. pf CCB Q Q. pf CCBPKG LB. nh. nh C_EB. pf LE. nh LB. nh. pf CCEPKG C_BB. pf C_BE. pf LB_P LE_P. nh LB_P. nh Pin_ Pin_ Pin_4 MODEL RANGE Frequency:. to. GHz Bias: VCE =. V to V, IC = ma to ma Date: 4/
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DATA SHEET NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
FEATURES Low noise and high gain DATA SHEET NPN SILICON RF TRANSISTOR NE8634 / SC337 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD NF =. db TYP., Ga
NPN 14 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability
Rev. 2 15 September 211 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features and benefits
DATA SHEET NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
DESCRIPTION DATA SHEET NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD The NE46234 / 2SC4703 is designed
DATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The PA8T has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1. db TYP. @ f = 1 GHz,, IC = 7 ma High Gain S1e = 1 db TYP.
Circuit Diagram IN. Type Marking Pin Configuration Package BGA420 BLs 1, IN 2, GND 3, OUT 4, VD SOT ma Device voltage V D
BGA SiMMICAmpliier in SIEGET 5Technologie Cascadable 5 Ωgain block Unconditionally stable Gain S = at. GHz IP out = + m at. GHz (V D = V, I D = typ. 6.7 ma) Noise igure NF =. at. GHz V D Reverse isolation
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400
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High Performance Isolated Collector Silicon Bipolar Transistor. Technical Data HBFP-0450
8 High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-4 Features Ideal for High Performance, Medium Power, and ow Noise Applications Typical Performance at 1.8 GHz Medium
NSVF6003SB6/D. RF Transistor 12 V, 150 ma, ft = 7 GHz, NPN Single
NSVFSB RF Transistor 1 V, 1 ma, ft = GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has
DATA SHEET NE68133 / 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Document No. P6EJVDS (th edition) Date Published March 997 N DATA SHEET SILICON TRANSISTOR NE68 / SC8 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68 / SC8 is an NPN
2SC5645. unit : mm 2106A 0.3 3
Ordering number : ENN688 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features Low noise : NF=1.dB typ (f=ghz). High cutoff frequency : ft=ghz typ (VCE=).
ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA
nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered
2SB1203/2SD1803. Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 SANYO Semiconductors DATA SHEET SB/SD8 Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter
JEITA Part No. 4-pin power minimold (Pb-Free) Note 1 kpcs/reel CAUTION
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES Low distortion: IM2 = 59.0 db TYP., IM3 = 82.0 db TYP. @, IC = 50 ma Low noise NF = 1.5 db TYP. @,
2SC5374A. RF Transistor 10V, 100mA, ft=5.2ghz, NPN Single SMCP. Features. Specifications
Ordering number : ENA19A SC4A RF Transistor 1V, 1mA, ft=.ghz, NPN Single SMCP http://onsemi.com Features High gain : S1e =1.dB typ (f=1ghz) High cut-off frequency : ft=.ghz typ Specifications Absolute
Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product
Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product Physics116A,12/4/06 Draft Rev. 1, 12/12/06 D. Pellett 2 Negative Feedback and Voltage Amplifier AB
The 2SC4177 is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package
DESCRIPTION FEATURES The is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package ORDERING INFORMATION APPLICATIONS Package Type SC-70 Part Number
3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
3 Volt, Low Noise High ft Silicon Transistor Features High Performance at VCE = 3V Low Noise Figure at Small Currents (.3- ma) High Gain (14 db) at 1mA Collector Current High ft (14 GHz) Available on Tape
Up to 6 GHz Medium Power Silicon Bipolar Transistor. Technical Data AT Plastic Package
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SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at collector
DATASHEET HFA3102. Features. Ordering Information. Applications. Pinout/Functional Diagram. Dual Long-Tailed Pair Transistor Array
DATASHEET HFA312 Dual Long-Tailed Pair Transistor Array The HFA312 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1
TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general
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EECS 142 Laboratory #3 High Frequency Amplifiers A. M. Niknejad Berkeley Wireless Research Center University of California, Berkeley 2108 Allston Way, Suite 200 Berkeley, CA 94704-1302 October 27, 2008
55GN01FA. RF Transistor 10V, 70mA, ft=5.5ghz, NPN Single SSFP. Features. Specifications
Ordering number : ENA111A GN01FA RF Transistor V, 70mA, ft=.ghz, NPN Single SSFP http://onsemi.com Features High cut-off frequency : ft=.ghz typ High gain : S1e =11dB typ (f=1ghz) =19dB typ (f=400mhz)
2STR1160. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
DISCRETE SEMICONDUCTORS DATA SHEET. BFG410W NPN 22 GHz wideband transistor. Product specification Supersedes data of 1997 Oct 29.
DISCRETE SEMICONDUCTORS DATA SHEET BFG41W Supersedes data of 1997 Oct 29 1998 Mar 11 BFG41W FEATURES Very high power gain Low noise figure High transition frequency Emitter is thermal lead Low feedback
AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Data Sheet
AT-86 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-86 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-86 is
Table 1: Device summary Order code Marking Package Packing 2STR SOT-23 Tape and reel
Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
CPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN CPH61 CPH61 Features NPN / PNP Epitaxial Planar Silicon Transistors Video Output Driver,High-Frequency Amplifier Applications Composite type with NPN transistor and PNP transistor
techniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package
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UHF POWER TRANSISTOR
NPN SiGe RF TRANSISTOR The is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-3 SMD package. The can be used as a driver device or an output device,
MCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6
Ordering number : EN8949A MCH641 Bipolar Transistor ( )V, ( )A, Low VCE(sat) Complementary Dual MCPH6 http://onsemi.com Applicaitons MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features
2SC5245A. RF Transistor 10V, 30mA, ft=8ghz, NPN Single MCP. Features. Specifications. : NF=1.4dB typ (f=1.5ghz) High gain
Ordering number : ENA1A SCA RF Transistor 1V, ma, ft=ghz, NPN Single MCP http://onsemi.com Features Low-noise : NF=.9dB typ (f=1ghz) : NF=1.dB typ (f=1.ghz) High gain : S1e =1dB typ (f=1.ghz) High cut-off
PT23T2222A NPN switching transistor
NPN switching transistor Description NPN switching transistor in a SOT-23 plastic package. 1 - Base 3 - Collector Feature 2 - Emitter High current (max. 600 ma) Lead finish:100% matte Sn(Tin) Mounting
15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit
Ordering number : ENA 1C1M Bipolar Transistor 1V,.A, Low VCE(sat) NPN Single MCP http://onsemi.com Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter
(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications
Ordering number : EN8A ACH Bipolar Transistor V,.A, Low VCE(sat) PNP Single CPH http://onsemi.com Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacitance
DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage
500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENC SA1416/SC646 Bipolar Transistor ( )1V, ( )1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
High-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN18B MCH1/MCH Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features