TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
|
|
- Bryan Norman
- 5 years ago
- Views:
Transcription
1 2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general purpose amplifier and switching applications at collector currents of µa to ma. Sourced from Process 66. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol Parameter alue Units EO ollector-emitter oltage 4 BO ollector-base oltage 4 EBO Emitter-Base oltage 5. I ollector urrent - ontinuous 2 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +5 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : ) These ratings are based on a maximum junction temperature of 5 degrees. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
2 2N396 / MMBT396 / MMPQ396 / PZT396 Electrical haracteristics TA = 25 unless otherwise noted Symbol Parameter Test onditions Min Max Units OFF HARATERISTIS (BR)EO ollector-emitter Breakdown oltage* I =. ma, I B = 4 (BR)BO ollector-base Breakdown oltage I = µa, I E = 4 (BR)EBO Emitter-Base Breakdown oltage I E = µa, I = 5. I BL Base utoff urrent E = 3, BE = 3. 5 na I EX ollector utoff urrent E = 3, BE = 3. 5 na ON HARATERISTIS h FE D urrent Gain * I =. ma, E =. I =. ma, E =. I = ma, E =. I = 5 ma, E =. I = ma, E =. E(sat) ollector-emitter Saturation oltage I = ma, I B =. ma I = 5 ma, I B = 5. ma BE(sat) Base-Emitter Saturation oltage I = ma, I B =. ma I = 5 ma, I B = 5. ma SMALL SIGNAL HARATERISTIS f T urrent Gain - Bandwidth Product I = ma, E = 2, f = MHz obo Output apacitance B = 5., I E =, f = khz ibo Input apacitance EB =.5, I =, f = khz NF Noise Figure (except MMPQ396) I = µa, E = 5., R S =.kω, f= Hz to 5.7 khz 25 MHz 4.5 pf. pf 4. db SWITHING HARATERISTIS (except MMPQ396) t d Delay Time = 3., BE =.5, 35 ns t r Rise Time I = ma, I B =. ma 35 ns t s Storage Time = 3., I = ma 225 ns t f Fall Time I B = I B2 =. ma 75 ns *Pulse Test: Pulse Width 3 µs, Duty ycle 2.% Spice Model PNP (Is=.4f Xti=3 Eg=. af=8.7 Bf=8.7 Ne=.5 Ise= Ikf=8m Xtb=.5 Br=4.977 Nc=2 Isc= Ikr= Rc=2.5 jc=9.728p Mjc=.5776 jc=.75 Fc=.5 je=8.63p Mje=.3677 je=.75 Tr=33.42n Tf=79.3p Itf=.4 tf=4 Xtf=6 Rb=)
3 2N396 / MMBT396 / MMPQ396 / PZT396 Thermal haracteristics TA = 25 unless otherwise noted Symbol haracteristic Max Units 2N396 *PZT396 P D Total Device Dissipation Derate above , 8. mw mw/ R q J Thermal Resistance, Junction to ase 83.3 /W R q JA Thermal Resistance, Junction to Ambient 2 25 /W Symbol haracteristic Max Units P D R q JA Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Effective 4 Die Each Die **MMBT *Device mounted on FR-4 PB 36 mm X 8 mm X.5 mm; mounting pad for the collector lead min. 6 cm 2. **Device mounted on FR-4 PB.6" X.6" X.6." MMPQ396, mw mw/ /W /W /W Typical haracteristics h - TYPIAL PULSED URRENT GAIN FE Typical Pulsed urrent Gain vs ollector urrent ce = I - OLLETOR URRENT (ma) ESAT ollector-emitter Saturation oltage vs ollector urrent β = 25 º 25-4 º 2 I - OLLETOR URRENT (ma) - BASE EMITTER OLTAGE () BESAT Base-Emitter Saturation oltage vs ollector urrent β = - 4 º º 2 I - OLLETOR URRENT (ma) - BASE EMITTER ON OLTAGE () BEON Base Emitter ON oltage vs ollector urrent - 4 º º E =. 25 I - OLLETOR URRENT (ma)
4 2N396 / MMBT396 / MMPQ396 / PZT396 Typical haracteristics I - OLLETOR URRENT (na) BO. ollector-utoff urrent vs. Ambient Temperature = 25 B T A- AMBIENT TEMPERATURE ( ) º APAITANE (pf) ommon-base Open ircuit Input and Output apacitance vs Reverse Bias oltage obo ibo. REERSE BIAS OLTAGE () NF - NOISE FIGURE (db) Noise Figure vs Frequency = 5. E I = µa, R S = 2 Ω I =. ma, R = 2 Ω S I = µa, R = 2. k Ω S. f - FREQUENY (khz) NF - NOISE FIGURE (db) Noise Figure vs Source Resistance I =. ma I = µa E= 5. f =. khz. R S - SOURE RESISTANE ( kω) 5 Switching Times vs ollector urrent 5 Turn On and Turn Off Times vs ollector urrent TIME (ns) t r I c I B= I B2= t d I - OLLETOR URRENT (ma) t s t f TIME (ns) I c t on I B = =.5 BE(OFF) I c t off I B= I B2= t off t on I - OLLETOR URRENT (ma)
5 2N396 / MMBT396 / MMPQ396 / PZT396 Typical haracteristics Power Dissipation vs Ambient Temperature P - POWER DISSIPATION (W) D TO-92 SOT-23 SOT o TEMPERATURE ( )
6
MMBT2907A. SOT-23 Mark: 2F. SOT-6 Mark:.2B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
B E PN297A TO-92 MMPQ297 E B E B E B E B SOI-6 MMBT297A This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5 ma. Sourced from Process 63. SOT-23 Mark:
More informationFMB3906. pin #1. SuperSOT -6 Mark:.2A Dot denotes pin #1 T A. = 25 C unless otherwise noted. Symbol Parameter Value Units
S7-6 Mark:.2A FFB396 B2 E2 pin # 2 B E NOTE: The pinouts are symmetrical; pin and pin are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of
More informationMMBT2222A. SOT-23 Mark: 1P. SOT-6 Mark:.1B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN2222A TO-92 MMPQ2222 SOI-6 MMT2222A SOT-23 Mark: P PZT2222A SOT-223 NMT2222 SOT-6 Mark:. 2 Discrete POWR & Signal Technologies 2 2 This device is for use as a medium power amplifier and switch requiring
More informationTO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N44 MMBT44 2N44 / MMBT44 B E TO-92 SOT-23 Mark: 83 B E This device is designed for use as general purpose amplifiers and switches requiring collector currents to 5 ma. Absolute Maximum Ratings* TA = 25
More informationSOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at collector
More informationTO-92 SOT-23 Mark: 3G. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
MPSH MMBTH MPSH / MMBTH E B TO-92 SOT-2 Mark: G B E This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the µa to ma range to MHz, and low frequency
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089
B E N588 N589 TO-9 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. MMBT588 MMBT589 OT- Mark: Q / R B E Absolute Maximum Ratings*
More informationTO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.
More informationECE351 Darlington Push-Pull Amplifier Design
EE35 Darlington Push-Pull Amplifier Design Specify the Design Parameters. Load Resistance R L := 8 ohm Load tolerance 5% R Ltol :=.5 Minimum power to load P L := 4 watt Minimum Load Resistance Maximum
More informationDistributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. PN2222A MMBT2222A PZT2222A EB E TO-92 SOT-23 B SOT-223 Mark:P B E NPN General
More informationLaboratory 5. Transistor and Photoelectric Circuits
Laboratory 5 Transistor and Photoelectric Circuits Required Components: 1 330 resistor 2 1 k resistors 1 10k resistor 1 2N3904 small signal transistor 1 TIP31C power transistor 1 1N4001 power diode 1 Radio
More information2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier
2N396 / MMBT396 / PZT396 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of ma to ma. EB Ordering Information
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
More informationTO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
B E TO-92 MMBT396 SOT-23 Mark: 2A B E / MMBT396 / PZT396 PZT396 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
E SOT-23 Mark: ED B This device is designed for general purpose amplifier applications at collector currents to 5 ma. Sourced from Process 19. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
More informationSOT-23 Mark: 1A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
B E TO-92 MMBT394 SOT-23 Mark: A B E / MMBT394 / PZT394 PZT394 SOT-223 B E NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends
More informationNPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS(1) ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMIONDUTOR TEHNIAL DATA Order this document by 2N393/D NPN Silicon *Motorola Preferred Device OLLETOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit ollector Emitter Voltage VEO 4 Vdc ollector
More informationGeneral Purpose Transistors
General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ S 7 which is designed for low power surface mount applications.
More information2N5551- MMBT5551 NPN General Purpose Amplifier
2N5551- MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551
More informationE C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N441 MMBT441 2N441 / MMBT441 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 5 ma.
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba
More information2N4403 / MMBT4403 PNP General-Purpose Amplifier
2N443 / MMBT443 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 5 ma. EB TO-92 SOT-23 Mark:2T B E Figure. 2N443
More informationGeneral Purpose Transistors
General Purpose ransistors PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323/ S 7 which is designed for low power surface mount applications.
More informationMMBT2222A. SOT-23 Mark: 1P. = 25 C unless otherwise noted T A. Symbol Parameter Value Units
B E PN2222A TO-92 MMBT2222A This device is fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Surced frm Prcess 9. SOT-23 Mark: P B E PZT2222A E B SOT-223 Abslute Maximum
More information2N5210/MMBT5210 B E. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
N5/MMBT5 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. N5/MMBT5 BE TO-9 B E OT- Mark: M Absolute Maximum Ratings* TA =
More informationSOT-23 MARK: U92. Absolute Maximum Ratings *T a = 25 C unless otherwise noted Symbol Parameter Value Units
BSR17A NPN General Purpose Amplifier C B E June 2007 NPN General Purpose Amplifier SOT-23 MARK: U92 Features This device is designed as a general purpose amplifier and switch. The useful dynamic range
More informationNSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m
4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
BP52 BP52 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1. A. Sourced from Process
More informationGeneral Purpose Transistors
PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323 which is designed for low power surface mount applications. Features Ideally suited for
More informationTO-92 SOT-23 Mark: ZC. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
N MMBT N / MMBT B E TO-9 SOT-3 Mark: Z B E This device is designed as a general purpse amplifier and switch. The useful dynamic range extends t ma as a switch and t MHz as an amplifier. Abslute Maximum
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089
B E 2N5088 2N5089 TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 50 ma. MMBT5088 MMBT5089
More informationLOW V CE(SAT) PNP SURFACE MOUNT TRANSISTOR
DPLS16 LOW V E(ST) PNP SURFE MOUNT TRNSISTOR NEW PRODUT Features Epitaxial Planar Die onstruction omplementary NPN Type vailable (DNLS16) Surface Mount Package Suited for utomated ssembly Lead Free/RoHS
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
BV26 BV26 E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 8 ma. Sourced from Process 61. Absolute Maximum Ratings*
More informationUNISONIC TECHNOLOGIES CO., LTD MMBT4401
UNISONIC TECHNOLOGIES CO., LTD MMBT441 NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION The UTC MMBT441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. 2 1
More information参考資料 E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N44 MMBT44 2N44 / MMBT44 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupse Amplifier This device is designed fr use as a medium pwer amplifier and switch requiring cllectr currents up t 5 ma. Abslute Maximum
More information12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m. MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM
NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high
More informationNSS12100UW3TCG. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 400 m
NSSUWTG, A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current
More informationNSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor
NSSF8TG V, 8. A, Low V E(sat) NPN Transistor ON Semiconductor's e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
More informationUNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2N441 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. ORDERING
More informationSOT-23 Mark: 2A. = 25 C unless otherwise noted T A. Symbol Parameter Value Units
B E 2N3906 TO-92 MMBT3906 SOT-23 Mark: 2A B E PZT3906 B SOT-223 E 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications
More informationDDC (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
DD (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFAE MOUNT TRANSISTOR Features Epitaxial Planar Die onstruction omplementary PNP Types Available (DDA) Built-In Biasing Resistors Lead Free/RoHS ompliant
More informationNSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m
NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
More informationUNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA. SOT-89 *Pb-free plating
More informationDZTA42. Features. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 DZTA42
3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully
More informationLow Noise Transistor LMBT5087LT3G. PNP Silicon LESHAN RADIO COMPANY, LTD. 1/7 ORDERING INFORMATION MAXIMUM RATINGS DEVICE MARKING
Low Noise Transistor PNP ilicon We declare that the material of product compliance with oh requirements. 3 ODEING INFOMATION Device Marking hipping 2Q 3/Tape & eel 1 2 LMBT587LT3G 2Q /Tape & eel OT 23
More informationGeneral Purpose Transistor
General Purpose Transistor Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive
More informationTA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25
More informationUNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089
UNISONIC TECHNOLOGIES CO., LTD MMBT5088/ NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 3 The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from
More informationBSR18A PNP General-Purpose Amplifier
BSR8A PNP General-Purpose Amplifier Description This device is designed as a general-purpose amplifier for switching applications at collector currents of μa to ma. Sourced from process 66. SOT-23 Mark:
More informationDual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
More information2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier
2N394 / MMBT394 / PZT394 NPN General-Purpose Amplifier Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to ma as a switch and to MHz as an
More informationFSB560/FSB560A NPN Low Saturation Transistor
/A NPN Low Saturation Transistor Features These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* T A =25 unless
More informationElectrical haracteristics OFF HARATERISTIS TA = 25 unless otherwise noted PNP RF Transistor (continued) Symbol Parameter Test onditions Min Max Units
MPSH81 MMBTH81 MPSH81 / MMBTH81 E E B TO-92 SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mhz with collector currents in the 1.0 ma
More informationMMBT3904. REVERSE VOLTAGE 60 Volts FORWARD CURRENT 0.2 Amperes NPN GENERAL PURPOSE TRANSISTOR SOT-23
MMBT394 NPN GENERAL PURPOSE TRANSISTOR REVERSE VOLTAGE 6 Volts FORWARD CURRENT.2 Amperes FEATURES For switching and amplifier applications. Complementary PNP type available (MMBT396) SOT-23 MECHANICAL
More informationFMMT491Q. Mechanical Data. Description. Feature. Ordering Information (Notes 4 & 5) Marking Information 60V NPN MEDIUM POWER TRANSISTOR IN SOT23
60V NPN MEDIUM POWER TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BV EO > 60V = 1A
More informationNPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
More informationGeneral Purpose Transistor
NPN Silicon RoHS product for packing code suffix "G", Halogen free product for packing code suffix "H". MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector Emitter Voltage O 3 4 Vdc SOT 23 Collector
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. ORDERING INFORMATION Ordering
More informationTop View Device Symbol Top View Pin-Out
YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen
More informationSOT-563 Plastic-Encapsulate Transistors
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC T SOT-563 Plastic-Encapsulate Transistors BC847BVN DUAL TRANSISTOR (NPN+PNP) SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W)
More informationBC817-16Q /-40Q. Mechanical Data. Description. Features. Ordering Information (Notes 4 and 5) Marking Information
45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A
More informationUNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION
More informationDCX(xxxx)U. Features. Mechanical Data. Ordering Information (Note 3 & 4) SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR.
DX(xxxx)U SMALL SIGNAL OMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Epitaxial Planar Die onstruction Built-In Biasing Resistors Surface Mount Package Suited for Automated Assembly Totally Lead-Free
More informationE C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N4401 MMBT4401 C 2N4401 / MMBT4401 E C B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to
More informationHigh Performance Isolated Collector Silicon Bipolar Transistor. Technical Data HBFP-0450
8 High Performance Isolated ollector Silicon Bipolar Transistor Technical Data HBFP-4 Features Ideal for High Performance, Medium Power, and ow Noise Applications Typical Performance at 1.8 GHz Medium
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION Ordering
More informationObsolete Product(s) - Obsolete Product(s)
PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL
More informationGeneral Purpose Transistors
General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and
More informationMPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
More informationObsolete Product(s) - Obsolete Product(s)
MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
More information7X = Device Marking. Symbol
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors
More informationC 2 B 1 E 1 E 2 B 2 C 1. Top View
MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification
More informationType Marking Pin Configuration Package BFP450 ANs 1 = B 2 = E 3 = C 4 = E SOT343
NPN Silicon RF Transistor For medium power amplifiers Compression point P = +9 m at. GHz maximum available gain G ma = 5.5 at. GHz Noise figure F =.5 at. GHz Transition frequency f T = GHz Gold metallization
More informationUNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION
More informationNZT651 NPN Current Driver Transistor
NZT65 NPN urrent Driver Transistor Description This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from process 4P. November 204 4 3 2 SOT-223.
More informationCOLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
More informationWPT2N32 WPT2N32. Descriptions. Features. Applications. Order information. Http//:
Single, PNP, -30V, -A, Power Transistor with 20V N-MOSFET Http//:www.willsemi.com Descriptions The is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit
More informationNPN SILICON RF TWIN TRANSISTOR
FEATURES LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE:. mm x.8 mm LOW HEIGHT PROFILE: Just. mm high TWO LOW NOISE OSCILLATOR TRANSISTORS: NE8 IDEAL FOR - GHz OSCILLATORS DESCRIPTION The contains
More informationMMBT2222A SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY
More informationE C E B. TO-92 SOT-23 Mark: 3D. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
MPSH81 MMBTH81 MPSH81 / MMBTH81 E E B TO-92 SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mhz with collector currents in the 1.0 ma
More informationDSS5240T. Features. Mechanical Data NEW PRODUCT. Application. Ordering Information (Note 4 & 5) Marking Information
YM NEW PRODUT 40V PNP LOW STURTION TRNSISTOR IN SOT23 Features BV EO > -40V I = -2 high ontinuous ollector urrent I M = -3 Peak Pulse urrent Low Saturation Voltage -225mV Max @ I = -. R E(ST) = 90mΩ at
More informationMUN5316DW1, NSBC143TPDXV6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN and PNP Transistors with Monolithic Bias Resistor Network
MUN3W, NSB3TPXV omplementary Bias Resistor Transistors R =.7 k, R2 = k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
More informationDarlington Amplifier Transistor
We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating
More informationBCW68G PNP General-Purpose Amplifier
BW68G PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at currents to 5 ma. Sourced from process 63. SOT-23 Mark: DG B E March
More informationESD (Electrostatic discharge) sensitive device, observe handling precaution!
NPN Silicon RF Transistor* For low current applications Smallest Package 1.4 x 0.8 x 0.59 mm Noise figure F = 1.25 db at 1.8 GHz outstanding G ms = 23 db at 1.8 GHz Transition frequency f T = 25 GHz Gold
More information120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR FCX705 SUMMARY V CEO =120V; V CE(sat) = 1.3V; I C = -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance
More informationPart Ordering code Marking Remarks MMBT2222A MMBT2222A-GS18 or MMBT2222A-GS08 1P Tape and Reel
Small Signal Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. This transistor is also available in the TO-92 case with the type designation MPS2222A.
More informationBFP420. NPN Silicon RF Transistor
BFP NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization
More informationIRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
More informationMULTI CHIP ARRAY COMPLEMENTARY 4x 2N2222A 4x 2N2907A COMMON EMITTER BIPOLAR TRANSISTORS MCABT8E2207C6
MULTI CHIP ARRAY COMPLEMENTARY 4x 2N2222A 4x 2N2907A Hermetic MO-042AA (LCC6) Silicon Planar Epitaxial 4x 2N2222A NPN & 4x 2N2907A PNP Transistors In A Common Emitter High Speed Low Saturation Switching
More informationNPN 7 GHz wideband transistor IMPORTANT NOTICE. use
Rev. 4 October 7 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 6 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together
More informationB C. absolute maximum ratings at 25 C case temperature (unless otherwise noted) OBSOLETE
,,, 40 W at 25 C Case Temperature A Continuous Collector Current 2 A Peak Collector Current 20 mj Reverse-Energy Rating B C TO-220 PACKAGE (TOP IEW) 2 This series is obsolete and not recommended for new
More informationDual Bias Resistor Transistors
DATA SHEET SEMICONDUCTOR MUN5DW Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
More informationBFP520. NPN Silicon RF Transistor
NPN Silicon RF Transistor For highest gain low noise amplifier at. GHz and ma / V Outstanding Gms =.5 Noise Figure F =.95 For oscillators up to 5 GHz Transition frequency f T = 5 GHz Gold metallisation
More informationBFP405. NPN Silicon RF Transistor
BFP5 NPN Silicon RF Transistor For low current applications For oscillators up to GHz Noise figure F =.5 db at. GHz outstanding G ms = db at. GHz Transition frequency f T = 5 GHz Gold metallization for
More informationPRELIMINARY DATA SHEET PACKAGE OUTLINE
PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES LOW NOISE: :NF = 1.7 db TYP at f = GHz,, lc = 3 ma :NF = 1.5 db TYP at f = GHz, VCE = 3 V, lc = 3 ma HIGH GAIN: : S1E = 3.5 db TYP
More informationPart Type differentiation Ordering code Remarks 2N3904 2N3904-BULK or 2N3904-TAP Bulk / Ammopack
Small Signal Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor 2N3906 is recommended. On special request,
More informationNZT660 / NZT660A PNP Low Saturation Transistor
NZT66 / NZT66A PNP Low Saturation Transistor Description These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. January 24 4 3 2 SOT-223.
More information