DDC (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
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1 DD (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFAE MOUNT TRANSISTOR Features Epitaxial Planar Die onstruction omplementary PNP Types Available (DDA) Built-In Biasing Resistors Lead Free/RoHS ompliant (Note ) "Green" Device (Note 4 and 5) A B SOT-6 Dim Min Max A.. B Mechanical Data ase: SOT-6 ase Material: Molded Plastic. UL Flammability lassification Rating 94- Moisture Sensitivity: Level per J-STD-2 Terminals: Solderable per MIL-STD-22, Method 28 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal onnections: See Diagram Marking Information: See Diagrams & Page 5 Ordering Information: See Page 5 Weight:.6 grams (approximate) K J H D F L M D.65 Nominal F..4 H J. K.9. L.25.4 M..25 α 8 All Dimensions in mm P/N R R2 MARKING DD24EU DD44EU DD4YU DD2JU DD4EU DDTU 22KΩ KΩ 2.2KΩ KΩ KΩ 22KΩ KΩ N7 N2 N4 N6 N N DD4TU 4.7KΩ N7 DD4TU KΩ N2 Maximum A = 25 unless otherwise specified R R 2 R R 2 R R 2 2 R, R2 R Only SHEMATI DIAGRAM haracteristic Symbol alue Unit Supply oltage, (6) to () and () to (4) 5 Input oltage, (2) to () and (5) to (4) DD24EU DD44EU DD4YU - to +4 - to +4-6 to +4 DD2JU -5 to +2 DD4EU IN - to +4 DDTU DD4TU DD4TU Output urrent DD24EU DD44EU DD4YU DD2JU DD4EU DDTU DD4TU DD4TU Output urrent All I (Max) ma Power Dissipation (Total) P d 2 mw Thermal Resistance, Junction to Ambient Air (Note ) R θja 625 /W Operating and Storage Temperature Range T j, T STG -55 to +5 Notes:. Mounted on FR4 P Board with recommended pad layout at mW per element must not be exceeded.. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at 5. Product manufactured with Date ode UO (week 4, 27) and newer are built with Green Molding ompound. Product manufactured prior to Date ode UO are built with Non-Green Molding ompound and may contain Halogens or Sb2O Fire Retardants. I O 7 5 ma DS45 Rev. 9-2 of 5 DD (xxxx) U
2 Electrical A = 25 unless otherwise specified haracteristic Symbol Min Typ Max Unit Test ondition (DDTU & DD4TU & DD4TU only) ollector-base Breakdown oltage B BO 5 I = 5μA ollector-emitter Breakdown oltage B EO 5 I = ma Emitter-Base Breakdown oltage B EBO 5 I E = 5μA ollector utoff urrent I BO.5 μa B = 5 Emitter utoff urrent I EBO.5 μa EB = 4 ollector-emitter Saturation oltage E(sat). I /I B = 2.5mA /.25mA I /I B = ma /.ma I /I B = ma / ma DD4TU DD4TU DDTU D urrent Transfer Ratio h FE 25 6 I = ma, E = 5 Input Resistor (R ) Tolerance ΔR - + % Gain-Bandwidth Product* f T 25 MHz E =, I E = -5mA, f = MHz Input oltage Output oltage Input urrent haracteristic Symbol Min Typ Max Unit Test ondition DD24EU DD44EU DD4YU DD2JU DD4EU DD24EU DD44EU DD4YU DD2JU DD4EU DD24EU DD44EU DD4YU DD2JU DD4EU DD24EU DD44EU DD4YU DD2JU DD4EU l(off) l(on) O(on).. I l ma = 5, I O = μa O =., I O = 5mA O =., I O = 2mA O =., I O = ma O =., I O = 5mA O =., I O = ma I O /I l = ma /.5mA I O /I l = ma /.5mA I O /I l = 5mA /.25mA I O /I l = 5mA /.25mA I O /I l = ma /.5mA I = 5 Output urrent I O(off).5 μa = 5, I = D urrent Gain DD24EU DD44EU DD4YU DD2JU DD4EU G l O = 5, I O = 5mA O = 5, I O = 5mA O = 5, I O = ma O = 5, I O = ma O = 5, I O = 5mA Input Resistor (R ) Tolerance ΔR - + % Resistance Ratio Tolerance R 2 /R % Gain-Bandwidth Product* f T 25 MHz E =, I E = 5mA, f = MHz * Transistor - For Reference Only DS45 Rev of 5 DD (xxxx) U
3 Typical urves DD2JK P D, POWER DISSIPATION (mw) , -5 5 T A, AMBIENT TEMPERATURE ( ) Fig. Derating urve One Section 5 E(SAT), OLLETOR EMITTER OLTAGE ()... 4 I /I = B I, OLLETOR URRENT (ma) Fig. 2 E(SAT) vs. I f = MHz URRENT GAIN h FE, D OB, APAITANE (pf) 2 I, OLLETOR URRENT (ma) Fig. D urrent Gain R, REERSE BIAS OLTAGE () Fig. 4 Output apacitance 75 = 5 O I, OLLETOR URRENT (ma) in, INPUT OLTAGE () in, INPUT OLTAGE () Fig. 5 ollector urrent vs. Input oltage DS45 Rev. 9-2 of I, OLLETOR URRENT (ma) Fig. 6 Input oltage vs. ollector urrent DD (xxxx) U
4 Typical urves DD4TK P D, POWER DISSIPATION (mw) T A, AMBIENT TEMPERATURE ( ) Fig. Derating urve One Section 5 E(SAT), OLLETOR EMITTER OLTAGE ()... I /I = B I, OLLETOR URRENT (ma) Fig. 2 E(SAT) vs. I, = E 4 f = MHz URRENT GAIN h FE, D OB, APAITANE (pf) 2 I, OLLETOR URRENT (ma) Fig. D urrent Gain R, REERSE BIAS OLTAGE () Fig. 4 Output apacitance =.2 O I, OLLETOR URRENT (ma).. in, INPUT OLTAGE () in, INPUT OLTAGE () Fig. 5 ollector urrent vs. Input oltage DS45 Rev of I, OLLETOR URRENT (ma) Fig. 6 Input oltage vs. ollector urrent DD (xxxx) U
5 Ordering Information (Note 6) Device Packaging Shipping DD24EU-7-F SOT-6 /Tape & Reel DD44EU-7-F SOT-6 /Tape & Reel DD4YU-7-F SOT-6 /Tape & Reel DD2JU-7-F SOT-6 /Tape & Reel DD4EU-7-F SOT-6 /Tape & Reel DDTU-7-F SOT-6 /Tape & Reel DD4TU-7-F SOT-6 /Tape & Reel DD4TU-7-F SOT-6 /Tape & Reel Notes: 6. For packaging details, go to our website at Marking Information NXX = Product Type Marking ode See Page Diagrams YM = Date ode Marking Y = Year ex: T = 26 M = Month ex: 9 = September Date ode Key Year ode N P R S T U W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec ode O N D IMPORTANT NOTIE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS45 Rev of 5 DD (xxxx) U
DCX(xxxx)U. Features. Mechanical Data. Ordering Information (Note 3 & 4) SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR.
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Distributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. MMT424 NPN SMLL SIGNL SURF MOUNT TRNSISTOR Features pitaxial Planar Die onstruction
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3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully
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FMMT491Q. Mechanical Data. Description. Feature. Ordering Information (Notes 4 & 5) Marking Information 60V NPN MEDIUM POWER TRANSISTOR IN SOT23
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Top View Device Symbol Top View Pin-Out
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Top View BAT54T BAT54AT BAT54CT BAT54ST
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ADVANCED INFORMATION
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NAB YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary R DS(ON) max I D T A = +25 C 2V.55Ω @ V GS = 4.5V 54mA BV DSS Description and Applications This MOSFET is designed to minimize the on-state
SOD123. Top View. M5X = Product Type Marking Code YM = Date Code Marking Y = Year (ex.: E = 2017) M = Month (ex: 9 = September)
0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary V F(MAX) (V) I R(MAX) (µa) V RRM (V) I O (A) @ +25 C @ +25 C 80 0.5 0.80 5 Description and Applications This is a single rectifier packaged
TO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
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BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor
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6V P-HANNEL ENHANEMENT MODE MOSFET Product Summary Features and Benefits ADVANE INFORMATION NEW PRODUT V (BR)DSS -6V Description R DS(on) I D T A = +25 5mΩ @ V GS = -V -3A 85mΩ @ V GS = -4.5V -2.7A This
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Green. Case Material: Molded Plastic. UL Flammability Classification 3.3V - 200V Nominal Zener Voltage Range
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Features OUT R EXT. (Optional) OUT GND
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Features. Bottom View. Top View Bottom View
YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A
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Green. Bottom View. Top View
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NSS12100UW3TCG. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 400 m
NSSUWTG, A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current
NPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
MUN52xxDWT DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Marking R(K) R2(K) Shipping MUN52DWT SOT-363 7A /Tape&Reel MUN522DW
MUN52xxDWT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors;
General Purpose Transistors
PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323 which is designed for low power surface mount applications. Features Ideally suited for
Dual Bias Resistor Transistors
DATA SHEET SEMICONDUCTOR MUN5DW Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
BV26 BV26 E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 8 ma. Sourced from Process 61. Absolute Maximum Ratings*
E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N441 MMBT441 2N441 / MMBT441 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 5 ma.
TO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.
Features. Top View Pin-Out
40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
Top View. Part Number Case Packaging DMTH4014LPDQ-13 PowerDI (Type C) 2,500/Tape & Reel
4V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 4V R DS(ON) max I D max T C = +25 C 5mΩ @ V GS = V 43.6A 25mΩ @ V GS = 4.5V 33A Description and Applications This MOSFET is designed
G1 S2. Top View. Part Number Case Packaging DMTH6010LPDQ-13 PowerDI (Type C) 2,500/Tape & Reel
6V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max I D max T C = +25 C mω @ V GS = V 47.6A 6mΩ @ V GS = 4.5V 39.5A Description and Applications This MOSFET is designed
Top View. Part Number Compliance Case Packaging DMN6066SSD-13 Commercial SO-8 2,500/Tape & Reel DMN6066SSDQ-13 Automotive SO-8 2,500/Tape & Reel
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS 60V R DS(on) T A = +25 C 66mΩ @ = V 4.4A 97mΩ @ = 4.5V 3.6A Low on-resistance Fast switching speed 0% Unclamped
B3XXAE B320AE-B345AE. Product Summary. Features and Benefits. Mechanical Data. Description and Applications NEW PRODUCT. Ordering Information (Note 4)
Green 3.0A SCHOTTKY BARRIER RECTIFIER Product Summary B320AE/B330AE/B340AE/B345AE V RRM (V) I O (A) V F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 20 3 0.5 0. 30 3 0.5 0.15 40 3 0.5 0.20 45 3 0.5 0.30 Features
TO-92 SOT-23 Mark: 3G. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
MPSH MMBTH MPSH / MMBTH E B TO-92 SOT-2 Mark: G B E This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the µa to ma range to MHz, and low frequency
Green. Top View Pin Diagram Internal Schematic. Part Number Case Packaging MSB12M-13 MSB 3,000/Tape & Reel
Green.2A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (µa),000.2. 5 Features and Benefits Glass Passivated Die Construction Compact, Thin
Green. Part Number Case Packaging DMN3013LFG-7 PowerDI (Type D) 1000 / Tape & Reel DMN3013LFG-13 PowerDI (Type D) 3000 / Tape & Reel
YYWW Green 3V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Device BV DSS R DS(ON) Max Q 3V 4.3m @ V GS = 8V, I D = 4A Q2 3V 4.3m @ V GS = 8V, I D = 4A Description
300mW, NPN Small Signal Transistor
300mW, NPN Small Signal Transistor FEATURES Low power loss, high efficiency Ideal for automated placement High surge current capability Compliant to RoHS directive 2011/65/EU and in accordance to WEEE
Green SOD123F. Date Code Key Year Code C D E F G H I J
DVNCED INFORMTION Green.0 SURFCE MOUNT FST RECOVERY RECTIFIER Product Summary (@T = +25 C) V RRM (V) I O () V F Max (V) I R Max (µ),000.3 Description and pplications The is a rectifier packaged in the
PT23T5401 Transistor. Feature. Mechanical Characteristics. Absolute maximum Top View. Parameter Symbol Value Units
PT23T54 Transistor Feature 3 - Collector PNP epitaxial planar silicon transistor - Base Top View 2 - Emitter Mechanical Characteristics Lead finish:% matte Sn(Tin) Mounting position: Any Qualified max
Green T-DFN Part Number Compliance Case Packaging LBS10-13 Commercial T-DFN ,000/Tape & Reel
Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
Top View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500
40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state
FMB3906. pin #1. SuperSOT -6 Mark:.2A Dot denotes pin #1 T A. = 25 C unless otherwise noted. Symbol Parameter Value Units
S7-6 Mark:.2A FFB396 B2 E2 pin # 2 B E NOTE: The pinouts are symmetrical; pin and pin are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of
Part Number Case Packaging DMN2990UFO-7B X2-DFN k/Tape & Reel
20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BV DSS 20V R DS(ON) max I D max T A = +25 C 0.99Ω @ V GS = 4.5V 750mA.2Ω @ V GS = 2.5V 680mA.8Ω @ V GS =.8V 555mA 2.4Ω @ V GS
Applications. Tape and Reel Device Qualification Packaging AL5802LP4 Commercial X2-DFN ,000/Tape & Reel -7
Description The combines a high-gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver. 30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER Pin Assignments The LED
MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors R1 = 10 k, R2 = 47 k
MUN524W, NSB4YXV6, NSB4YP6 ual NPN Bias Resistor Transistors R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
Part Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
MUN5333W, NSB43ZPXV6, NSB43ZPP6 omplementary Bias Resistor Transistors R = 4.7 k, R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = 47 k
MUN5335W, NSB3JPXV6, NSB3JPP6 omplementary Bias Resistor Transistors R =. k, R = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
Green. Pin Diagram. Part Number Compliance Case Packaging MSB30M-13 Commercial MSBL 2,500/Tape & Reel
Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
Green. Part Number Case Packaging SBRT3U60SAF-13 SMAF 10,000/Tape & Reel
Green 3A Trench SBR TRENCH SUPER BARRIER RECTIFIER Product Summary V V RRM (V) I O (A) F(MAX) (V) I R(MAX) (ma) @ +25 C @ +25 C 60 3 0.53 0.5 Description and Applications The device is a 3A 60V single
7X = Device Marking. Symbol
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors
MUN5331DW1, NSBC123EPDXV6. Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
MUN5W, NSBEPXV6 omplementary Bias Resistor Transistors R =. k, R =. k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6. Complementary Bias Resistor Transistors R1 = 47 k, R2 = 47 k
MUN533W, NSB44EPXV6, NSB44EPP6 omplementary Bias Resistor Transistors R = 47 k, R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to
Features. Top View. Part Number Case Packaging DMN3008SCP10-7 X4-DSN /Tape & Reel
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BV SSS R SS(ON) MAX I S T A = +25 C 30V 7.8mΩ @ V GS =V 14.6A Description This new generation MOSFET has been designed to minimize the on-state resistance
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 k, R2 = 10 k
MUN53W, NSB4EPXV6, NSB4EPP6 omplementary Bias Resistor Transistors R = k, R2 = k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
Green. Features G S. Pin Out Top View. Part Number Case Packaging DMNH6021SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel
Green 6V 7 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max 23mΩ @ V GS = V 28mΩ @ V GS = 4.V Description and Applications I D max T C = +2 C A 4A This MOSFET is designed to meet
Green SMC. Top View Bottom View. Part Number Case Packaging B5XXCE-13 SMC 3,000/Tape & Reel
Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary B520CE/B530CE/B540CE V RRM (V) I O (A) V F Max (V) I R Max (ma) 20 5.0 0.55 0.2 30 5.0 0.55 0.2 40 5.0 0.55 0.2 Features and Benefits
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
BP52 BP52 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1. A. Sourced from Process
Features. Bottom View
YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C 17mΩ @ V GS = 1V 8.4A 28mΩ @ V GS = 4.5V 6.8A This new generation MOSFET is