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1 Distributed by: The content and copyrights of the attached material are the property of its owner.
2 MMT424 NPN SMLL SIGNL SURF MOUNT TRNSISTOR Features pitaxial Planar Die onstruction omplementary PNP Type vailable (MMT426) Ideal for Medium Power mplification and Switching Lead Free/RoHS ompliant (Note 2) SOT-23 Dim Min Max Mechanical Data TOP VIW D G D ase: SOT-23 ase Material: Molded Plastic. UL Flammability lassification Rating 94V- Moisture Sensitivity: Level per J-STD-2 Terminal onnections: See Diagram Terminals: Solderable per MIL-STD-22, Method 28 Lead Free Plating (Matte Tin Finish annealed over lloy 42 leadframe). Marking (See Page 2): K Ordering & Date ode Information: See Page 2 Weight:.8 grams (approximate) H J K L M G H J.3. K.93. L.45.6 M ll Dimensions in mm Maximum T = 25 unless otherwise specified haracteristic Symbol MMT424 Unit ollector-ase Voltage V O 3 V ollector-mitter Voltage V O 25 V mitter-ase Voltage V O 5. V ollector urrent - ontinuous (Note ) I 2 m Power Dissipation (Note ) P d 3 mw Thermal Resistance, Junction to mbient (Note ) R J 47 /W Operating and Storage and Temperature Range T j, T STG -55 to +5 Notes:. Device mounted on FR-4 P, inch x.85 inch x.62 inch; pad layout as shown on Diodes Inc. suggested pad layout document P2, which can be found on our website at 2. No purposefully added lead. DS35 Rev. 9-2 of 4 MMT424 Diodes Incorporated
3 lectrical T = 25 unless otherwise specified OFF HRTRISTIS (Note 3) haracteristic Symbol Min Max Unit Test ondition ollector-ase reakdown Voltage V (R)O 3 V I =, I = ollector-mitter reakdown Voltage V (R)O 25 V I =.m, I = mitter-ase reakdown Voltage V (R)O V I =, I = ollector utoff urrent I O 5 n V = 2V, I = V mitter utoff urrent I O 5 n V = 3.V, I = V ON HRTRISTIS (Note 3) D urrent Gain h F I = 2.m, V =.V I = 5m, V =.V ollector-mitter Saturation Voltage V (ST).3 V I = 5m, I = 5.m ase-mitter Saturation Voltage V (ST).95 V I = 5m, I = 5.m SMLL SIGNL HRTRISTIS Output apacitance obo 4. pf V = 5.V, f =.MHz, I = Input apacitance ibo 8. pf V =.5V, f =.MHz, I = Small Signal urrent Gain h fe 2 48 urrent Gain-andwidth Product f T 3 MHz V =.V, I = 2.m, f =.khz V = 2V, I = m, f = MHz Ordering Information (Note 4) Device Packaging Shipping MMT424-7-F SOT-23 3/Tape & Reel Notes: 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at Marking Information K YM K = Product Type Marking ode YM = Date ode Marking Y = Year ex: N = 22 M = Month ex: 9 = September Date ode Key Year ode J K L M N P R S T U V W Month Jan Feb March pr May Jun Jul ug Sep Oct Nov Dec ode O N D DS35 Rev of 4 MMT424
4 5 P D, POWR DISSIPTION (mw) IO, INPUT PITN (pf) OO, OUTPUT PITN (pf) 5 ibo f = MHz 5 obo T, MINT TMPRTUR ( ) Fig., Max Power Dissipation vs mbient Temperature V, OLLTOR-S VOLTG (V) Fig. 2, Input and Output apacitance vs. ollector-ase Voltage I I = h F, D URRNT GIN T = -25 T = 25 T = +25 V (ST), OLLTOR-MITTR (V) STURTION VOLTG.. I, OLLTOR URRNT (m) Fig. 3, Typical D urrent Gain vs ollector urrent V =.V.. I, OLLTOR URRNT (m) Fig. 4, Typical ollector-mitter Saturation Voltage vs. ollector urrent I I = V (ST), S-MITTR (V) STURTION VOLTG.. I, OLLTOR URRNT (m) Fig. 5, Typical ase-mitter Saturation Voltage vs. ollector urrent DS35 Rev of 4 MMT424
5 IMPORTNT NOTI Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIF SUPPORT The products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS35 Rev of 4 MMT424
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Green 800W SURFCE MOUNT TRNSIENT VOLTGE SUPPRESSOR Product Summary V RWM V BR Min I PPM Max 28V 3V 4 Features and Benefits Uni-directional polarity Low profile thermally efficient package Compliant with
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NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high
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Green 6V 7 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max 23mΩ @ V GS = V 28mΩ @ V GS = 4.V Description and Applications I D max T C = +2 C A 4A This MOSFET is designed to meet
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LINEAR LED CONSTANT CURRENT REGULATOR IN SOT26 Description These Linear LED drivers are designed to meet the stringent requirements of automotive applications. The and BCR421U monolithically integrate
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NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
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20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BV DSS 20V R DS(ON) max I D max T A = +25 C 0.99Ω @ V GS = 4.5V 750mA.2Ω @ V GS = 2.5V 680mA.8Ω @ V GS =.8V 555mA 2.4Ω @ V GS
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4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current
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Green 1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@ T A = +25 C) V RRM (V) I O (A) V F Max (V) I R Max (µa) 1000 1 1.1 5 Description and Applications The is a surface mount glass
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60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V (BR)DSS 60V R DS(on) T A = +25 C 66mΩ @ = V 4.4A 97mΩ @ = 4.5V 3.6A Low on-resistance Fast switching speed 0% Unclamped
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Green 3A TRENCH SCHOTTKY BARRIER RECTIFIER SMA Product Summary (@ T A = +25 C ) V RRM (V) I O (A) V F(MAX) (mv) I R(MAX) (µa) 45 3 480 280 Features and Benefits Low Leakage Current Soft, Fast Switching
More informationTop View. Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS ,500
40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS 40V R DS(on) T A = 25 C 34mΩ @ = V 7.2A 59mΩ @ = 4.5V 5.5A Description and Applications This MOSFET has been designed to minimize the on-state
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Green 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary (@T A = +25 C) V RRM (V) I O (A) V F (V) I R (μa) 1000 3.0 1.1 5 Features and Benefits Glass Passivated Die Construction Compact,
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More informationPart Number Case Packaging SDM05U20CSP-7 X3-WLB ,000/Reel
ADVANCED 0.5A SCHOTTKY BARRIER RECTIFER CHI SCALE ACKAGE roduct Summary V RRM (V) I O (A) V F Max (V) I R Max (µa) 20 0.5 0.43 55 Description The is a 20-Volt 0.5A Schottky barrier rectifier that is optimized
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N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary BV SSS R SS(ON) MAX I S T A = +25 C 30V 7.8mΩ @ V GS =V 14.6A Description This new generation MOSFET has been designed to minimize the on-state resistance
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YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C 17mΩ @ V GS = 1V 8.4A 28mΩ @ V GS = 4.5V 6.8A This new generation MOSFET is
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40 1A GATE DRIE SOT363 Description is a high-speed, non-inverting single gate driver for switching MOSFETs. It can transfer up to 1A peak source/sink current into the gate for effective charging and discharging
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NEW PODUCT Green 5 ULT-FST ECOVEY ECTIFIE PowerDI Product Summary (@T = +25 C) V M (V) I O () V F Max (V) I Max (μ) 4 5 1.185 1 Description Features and Benefits Glass Passivated Die Construction Ultra-Fast
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5 to 1mA LED CONSTANT CURRENT REGULATOR in SOT26 Description This Linear LED driver is designed to meet the stringent requirements of automotive applications. The BCR5UW6 monolithically integrates a transistor,
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