Lead-free Green. 200 ma LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH PULL DOWN RESISTOR General Description

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Lead-free Green LMNB NEW PROUCT m LO SWITCH FETURING PRE-BISE PNP TRNSISTOR N N-MOSFET WITH PULL OWN RESISTOR General escription LMNB is best suited for applications where the load needs to be turned

1 Lead-free Green LMNB NEW PROUCT m LO SWITCH FETURING PRE-BISE PNP TRNSISTOR N N-MOSFET WITH PULL OWN RESISTOR General escription LMNB is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators, etc., particularly at a point of load. It features a discrete pass transistor with stable V CE(ST) which does not depend on the input voltage and can support continuous maximum current of m. It also contains a discrete N-MOSFET that can be used as control. This N-MOSFET also has a built-in pull down resistor at its gate. The component can be used as a part of a circuit or as a stand alone discrete device. Features Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-own Resistor Surface Mount Package Ideally Suited for utomated ssembly Processes Lead Free By esign/rohs Compliant (Note ) "Green" evice (Note ) Mechanical ata Case: SOT-6 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 9V- Moisture sensitivity: Level per J-ST-C Terminal Connections: See iagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-ST-, Method 8 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight:.6 grams (approximate) 6 C_Q C TBJU_IE Q B R PNP 7 E R 3 K B_Q 5 R3 37K G S_Q S SNM67_IE 3 E_Q G_Q _Q Q NMOS Fig. Schematic and Pin Configuration 6 Fig. : SOT-6 5 Sub-Components Reference evice Type R (NOM) R (NOM) R3 (NOM) Figure TBJU_IE Q PNP Transistor K 7 SNM67_IE Q N-MOSFET 37K Maximum Ratings, Total T = 5 C unless otherwise specified Characteristic Symbol Value Unit Power issipation (Note 3) P d 3 mw Power erating Factor above 5 C P der. mw/ C Output Current I out m Thermal Characteristics Characteristic Symbol Value Unit Junction Operation and Storage Temperature Range T j,t stg -55 to +5 C Thermal Resistance, Junction to mbient ir (Note3) (Equivalent to one heated junction of PNP transistor) R θj 7 C/W Notes:. No purposefully added lead.. iodes Inc.'s "Green" policy can be found on our website at 3. evice mounted on FR- PCB, inch x.85 inch x.6 inch; pad layout as shown on iodes Inc. suggested pad layout document P, which can be found on our website at S365 Rev. 7 - of LMNB iodes Incorporated

2 NEW PROUCT Maximum Ratings: Sub-Component evice: Pre-Biased PNP Transistor T = 5 C unless otherwise T = 5 C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage V CBO -5 V Collector-Emitter Voltage V CEO -5 V Supply Voltage V cc -5 V Input Voltage V in +5 to -6 V Output Current I C - m Sub-Component evice: N-MOSFET with Gate Pull-own Resistor (Q) Characteristic Symbol Value Unit rain-source Voltage V SS 6 V rain Gate Voltage (R GS MΩ) V GR 6 V Gate-Source Voltage Continuous V GSS +/- (tp<5 us) +/- V rain Current (Page : Note 3) Continuous (V gs = V) 5 I (tp < us, uty Cycle <%) 8 m Continuous Source Current I S 5 m S365 Rev. 7 - of LMNB

3 Electrical Characteristics: Pre-Biased PNP Transistor T = 5 C unless otherwise specified NEW PROUCT OFF CHRCTERISTICS Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Cut Off Current I CBO - n V CB = -5V, I E = Collector-Emitter Cut Off Current I CEO -5 n V CE = -5V, I B = Emitter-Base Cut Off Current I EBO m V EB = -5V, I C = Emitter-Base Cut Off Current V (BR)CBO -5 V I C = -µ, I E = Collector-Base Breakdown Voltage V (BR)CEO -5 V I C = - m, I B = Collector-Emitter Breakdown Voltage V I(OFF) V V CE = -5V, I C = -µ Output Voltage V OH -.9 V V CC = -5V, V B = -.5V, R L = K Output Current (leakage current same as I CEO ) I O(OFF) -5 n V CC = -5V, V I = V ON CHRCTERISTICS Collector-Emitter Saturation Voltage V CE(ST) -.5 V I C = - m, I B = -.5 m -. V I C = -5m, I B = -5m -. V I C = -m, I B = -m -.5 V I C = -m, I B = -m -.5 V I C = -m, I B = -m -.3 V I C = -m, I B = -m Equivalent on-resistance* R CE(ST).5 Ω I C = -m, I B = -m C Current Gain h FE 6 5 V CE = -5V, I C = - m 6 5 V CE = -5V, I C = -5 m 6 5 V CE = -5V, I C = - m 6 5 V CE = -5V, I C = - m Input On Voltage V I(ON) V V O = -.3V, I C = - m Output Voltage (equivalent to V CE(ST) or V O(on) ) V OL V Input Current I i m V I = -5V V CC = -5V, V B = -.5V, I o /I I = -5m /-.5m Base-Emitter Turn-on Voltage V BE(ON) V V CE = -5V, I C = -m I C = -5m, I B = -5m Base-Emitter Saturation Voltage V BE(ST) V I C = -8m, I B = -8m Input Resistor (Base), +/- 3% R.7 KΩ Pull-up Resistor (Base to Vcc supply), +/- 3% R KΩ Resistor Ratio (Input Resistor/Pullup resistor), +/ -% R/R SMLL SIGNL CHRCTERISTICS Transition Frequency (gain bandwidth product) f T MHz Collector capacitance, (Ccbo-Output Capacitance) C C pf V CE = -V, I E = -5m, f = MHz V CB = -V, I E =, f = MHz * Pulse Test: Pulse width, tp<3 µs, uty Cycle, d<=.. S365 Rev. 7-3 of LMNB

4 NEW PROUCT Electrical Characteristics: N-MOSFET with Gate Pull-own Resistor T = 5 C unless otherwise specified OFF CHRCTERISTICS (Note ) Characteristic Symbol Min Typ Max Unit Test Condition rain-source Breakdown Voltage, BVSS V (BR)SS 6 V V GS = V, I = µ Zero Gate Voltage rain Current (rain Leakage Current) I SS µ V GS =V, V S = 6V Gate-Body Leakage Current, Forward I GSSF.95 m V GS = V, V S = V Gate-Body Leakage Current, Reverse I GSSR -.95 m V GS = -V, V S = V ON CHRCTERISTICS (Note ) Gate Source Threshold Voltage (Control Supply Voltage) V GS(th).86. V V S = V GS, I =.5m.8.5 V GS = 5V, I = 5m Static rain-source On-State Voltage V S(on) V V GS = V, I = 5m On-State rain Current I (on) 5 m V GS = V, V S V S(ON).55 3 V GS = 5V, I = 5m Static rain-source On Resistance R S(on) Ω. V GS = V, I = 5m 8 V S V S(ON), I = 5 m Forward Transconductance g FS ms 8 35 V S V S(ON), I = m Gate Pull-own Resistor, +/- 3% R3 37 KΩ YNMIC CHRCTERISTICS Input Capacitance C iss 5 pf Output Capacitance C oss 5 pf Reverse Transfer Capacitance C rss 5 pf SWITCHING CHRCTERISTICS* V S = -5V, V GS = V, ƒ= MHz Turn-On elay Time td (on) ns V = 3V, V GS =V, I = m, Turn-Off elay Time td (off) ns R G = 5Ω, R L = 5Ω SOURCE-RIN (BOY) IOE CHRCTERISTICS N MXIMUM RTINGS rain-source iode Forward On-Voltage V S.88.5 V V GS = V, I S = 5 m* Maximum Continuous rain-source iode Forward Current (Reverse rain Current) Maximum rain-source iode Forward Current * Pulse Test: Pulse width, tp<3 µs, uty Cycle, d<=.. Notes:. Short duration test pulse used to minimize self-heating effect. I S 5 m I SM 8 m Typical Characteristics 35 3 P, POWER ISSIPTION (mw) T, MBIENT TEMPERTURE ( C) Fig. 3, Max Power issipation vs mbient Temperature S365 Rev. 7 - of LMNB

5 Typical Pre-Biased PNP Transistor (Q) Characteristics NEW PROUCT V CE(ST), COLLECTOR VOLTGE (V)..3.. I /I = C B T = 5 C T = 5 C T = 5 C T = T = 85 C V CE(ST), COLLECTOR VOLTGE (V) I /I = C B T = 5 C T = 5 C T = 5 C T = 85 C T =.... I C, COLLECTOR CURRENT () Fig. VCE(ST) vs. IC I C, COLLECTOR CURRENT () Fig. 5 VCE(ST) vs. IC V BE(ST), BSE EMITTER VOLTGE (V) I /I = C B T = 85 C T = 5 C T = 5 C T = 5 C T = V BE(ON), BSE EMITTER VOLTGE (V) I /I = C B V = 5V CE T = 5 C T = T = 85 C T = 5 C T = 5 C I C, COLLECTOR CURRENT (m) Fig. 6 VBE(ST) vs. IC I C, COLLECTOR CURRENT (m) Fig. 7 V BE(ON) vs. IC V = 5V CE T = 5 C h FE, C CURRENT GIN 3 T = 85 C T = 5 C T = 5 C T = I C, COLLECTOR CURRENT (m) Fig. 8 h FE vs. IC S365 Rev. 7-5 of LMNB

6 Typical N-Channel MOSFET (Q) Characteristics NEW PROUCT I, RIN CURRENT () T = 5 C V = 8V GS V = V GS V = V GS V = 6V GS V = 5V GS I, RIN CURRENT () V = V S T = T = 5 C T = 5 C T = 85 C T = 5 C. V = 3V GS V S, RIN-SOURCE VOLTGE (V) Fig. 9 Output Characteristics V GS, GTE-SOURCE VOLTGE (V) Fig. Transfer Characteristics. V GS(th), GTE THRESHOL VOLTGE (V) V S = V V S = VGS I =.5m 5 V = 5V GS 3 T = 5 C T = T = 5 C T = 5 C T = 85 C T, JUNCTION TEMPERTURE ( C) J Fig. Gate Threshold Voltage vs. Junction Temperature... I, RIN CURRENT () Fig. Static rain-source On-Resistance vs. rain Current 7 V = V GS 6 T = 5 C 3 T = 5 C T = 5 C 5 T = 85 C T = 5 C T = 3 I = 5m I = 5m I, RIN CURRENT () Fig. 3 Static rain-source On-Resistance vs. rain Current V GTE SOURCE VOLTGE (V) GS, Fig. Static rain-source On-Resistance vs. Gate-Source Voltage S365 Rev. 7-6 of LMNB

7 NEW PROUCT.5.5 V = V GS I = 5m I = 5m I S, REVERSE RIN CURRENT ().. T = 5 C T = 5 C T = 85 C T = T = 5 C V = 5V GS T, JUNCTION TEMPERTURE ( C) j Fig. 5 Static rain-source On-State Resistance vs. Junction Temperature V S, SOURCE-RIN VOLTGE (V) Fig. 6 Reverse rain Current vs. Source-rain Voltage I S, REVERSE RIN CURRENT ()... V GS = V V GS = 5V T = 5 C =5 C V S, BOY IOE FORWR VOLTGE (V) Fig. 7 Reverse rain Current vs. Body iode Forward Voltage g FS, FORWR TRNSCONUCTNCE (ms) T = 85 C T = 5 C T = 5 C T = T = 5 C I, RIN CURRENT () Fig. 8 Forward Transconductance vs. rain Current (V > I R ) S S(ON) S365 Rev. 7-7 of LMNB iodes Incorporated

8 pplication etails NEW PROUCT PNP Transistor (TBJU) and N-MOSFET (SNM67) with gate pull-down resistor integrated as one in LMNB can be used as a discrete entity for general purpose applications or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 9, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of m. The MOSFET Switch draws no current, hence loading of control circuit is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. for one example of a typical application circuit used in conjunction with voltage regulator as a part of a power management system) Vin Control TBJU E C Q PNP R B K R 7 SNM67 S Q NMOS G R3 Vout LO 37K Fig. 9 Circuit iagram Typical pplication Circuit 5v Supply U Vin Control Logic Circuit (PIC, Comparator etc) OUT Vin Control 3 Load Switch U3 E_Q C_Q G_Q B_Q _Q S_Q 6 5 Vout Gnd U IN OUT Point of Load GN LNMB iodes Inc. Voltage Regulator Fig. S365 Rev. 7-8 of LMNB

9 Ordering Information (Note 5) NEW PROUCT Note: Marking Information evice Marking Code Packaging Shipping LMNB-7 PM SOT-6 3/Tape & Reel 5. For Packaging etails, go to our website at PM YM PM = Product Type Marking Code, YM = ate Code Marking Y = Year ex: T = 6 M = Month ex: 9 = September ate Code Key Fig. Year Code T U V W Month Jan Feb March pr May Jun Jul ug Sep Oct Nov ec Code O N S365 Rev. 7-9 of LMNB

10 Mechanical etails NEW PROUCT K H B C M SOT-6 im Min Max Typ B C F H J.3..5 J F L K.3. L M...5 Fig. α 8 - ll imensions in mm Suggested Pad Layout: (Based on IPC-SM-78) E E Figure 3 imensions SOT-6* Z 3. G.6 Z G C X.55 Y.8 C. Y E.95 X Fig. 3 IMPORTNT NOTICE iodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. iodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold iodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of iodes Incorporated. S365 Rev. 7 - of LMNB

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