General Purpose Transistors
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1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ S 7 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol B856 B857 B858 Unit ollector Emitter oltage EO ollector Base oltage BO Emitter Base oltage EBO ollector urrent ontinuous I madc LB856AWTG, BWTG LB857AWTG, BWTG LB858AWTG, BWTG S-LB856AWTG, BWTG S-LB857AWTG, BWTG S-LB858AWTG, BWTG 3 2 SOT 323 / S-7 THERMAL HARATERISTIS haracteristic Symbol Max Unit Total Device Dissipation FR 5 Board, () P D 5 mw T A = 25 Thermal Resistance, Junction to Ambient R θja 833 /W Junction and Storage Temperature T J, T stg 55 to +5 DEIE MARKING S-LB856AWTG= 3A; S-LB856BWTG= 3B;S-LB857AWTG= 3E; S-LB857BWTG = 3F; S-LB857= 3G;S-LB858AWTG= 3J; S-LB858BWTG= 3K;S-LB858= 3L BASE 3 OLLETOR 2 EMITTER ELETRIAL HARATERISTIS (T A = 25 unless otherwise noted.) OFF HARATERISTIS haracteristic Symbol Min Typ Max Unit ollector Emitter Breakdown oltage LB856 Series 65 (I = ma) LB857 Series (BR)EO 45 v 3 ollector Emitter Breakdown oltage LB856 Series 8 (I = µa, EB = ) LB857B Only (BR)ES 5 v 3 ollector Base Breakdown oltage LB856 Series 8 (I = µa) LB857 Series (BR)BO 5 v 3 Emitter Base Breakdown oltage LB856 Series 5. (I E =. µa) LB857 Series (BR)EBO 5. v 5. ollector utoff urrent ( B = 3 ) I BO 5 na ( B = 3, T A = 5 ) 4. µa.fr 5=. x.75 x.62in Rev.O /6
2 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, ELETRIAL HARATERISTIS (T A = 25 unless otherwise noted) (ontinued) haracteristic Symbol Min Typ Max Unit ON HARATERISTIS D urrent Gain h FE (I = ma, E = 5. ) LB856A, LB857A, LB858A LB856B,LB857B, LB858B LB857, LB ollector Emitter Saturation oltage (I = ma, I B =.5 ma).3 E(sat) ollector Emitter Saturation oltage (I = ma, I B = 5. ma).65 Base Emitter Saturation oltage (I = ma, I B =.5 ma).7 BE(sat) Base Emitter Saturation oltage (I = ma, I B = 5. ma).9 Base Emitter oltage (I = ma, E = 5. ).6.75 BE(on) Base Emitter oltage (I = ma, E = 5. ).82 SMALL SIGNAL HARATERISTIS urrent Gain Bandwidth Product f T MHz (I = ma, E = 5. dc, f = MHz) Output apacitance ( B =, f =. MHz) ob 4.5 pf Noise Figure (I = ma, E= 5. dc, R S= kω, f =. khz, BW= 2 Hz) NF db ORDERING INFORMATION ( Pb Free ) Device Package Shipping LB856AWTG series LB856AWT3G series SOT-23 SOT-23 3/Tape & Reel /Tape & Reel Rev.O 2/6
3 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, LB857/LB858 h FE, NORMALIZED D URRENT GAIN.5 E = T = 25 A , OLTAGE (OLTS)..9 T = 25 I /I = BE(sat) = BE(on) I /I = E(sat) B I, OLLETOR URRENT (madc) Figure. Normalized D urrent Gain I, OLLETOR URRENT (madc) Figure 2. Saturation and On oltages E, OLLETOR EMITTER OLTAGE ().6.2 I = ma I = 2 ma I = 5 ma T A = 25 I = 2 ma I = ma θ B, TEMPERATURE OEFFIIENT (m/ ) to I, BASE URRENT (ma) B Figure 3. ollector Saturation Region I, OLLETOR URRENT (ma) Figure 4. Base Emitter Temperature oefficient. 4, APAITANE(pF) ib ob. T =25 A 2 = E f T, URRENT GAIN BANDWIDTH PRODUT (MHz) T A = , REERSE OLTAGE (OLTS) R Figure 5. apacitances I, OLLETOR URRENT (madc) Figure 6. urrent Gain Bandwidth Product Rev.O 3/6
4 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, LB856 h FE, D URRENT GAIN (NORMALIZED), OLLETOR EMITTER OLTAGE (OLTS) E = 5. E T = 25 A I = ma I, OLLETOR URRENT (ma) Figure 7. D urrent Gain 2mA ma I, BASE URRENT (ma) B Figure 9. ollector Saturation Region 2mA T J = θ B, TEMPERATURE OEFFIIENT (m/ ), OLTAGE (OLTS) T J = 25 I /I B = E = 5. I /I B = mA I, OLLETOR URRENT (ma) Figure 8. On oltage θ B for BE 55 to I, OLLETOR URRENT (ma) Figure. Base Emitter Temperature oefficient, APAITANE (pf) 4 T = 25 J 2 ib ob f T, URRENT GAIN BANDWIDTH PRODUT T E = , REERSE OLTAGE (OLTS) R Figure. apacitance I, OLLETOR URRENT (ma) Figure 2. urrent Gain Bandwidth Product Rev.O 4/6
5 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, I, OLLETOR URRENT (ma) r( t), TRANSIENT THERMAL RESISTANE (NORMALIZED) D=.5..5 SINGLE PULSE SINGLE PULSE T A = 25 T J = 25 B558 B557 B556 BONDING WIRE LIMIT THERMAL LIMIT SEOND BREAKDOWN LIMIT E, OLLETOR EMITTER OLTAGE () Figure 4. Active Region Safe Operating Area s P (pk) t, TIME (ms) Figure 3. Thermal Response 3 ms t t 2 Z θj (t) = r(t) R θj R θj = 83.3 /W MAX Z θja (t) = r(t) R θja R θja = 2 /W MAX D URES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T = P (pk) R θj (t).3.2 DUTY YLE, D = t /t k k 5.k k The safe operating area curves indicate I E limits of the transistor that must be observed for reliable operation. ollector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 4 is based upon T = 5 ; T or T J(pk) A is variable depending upon conditions. Pulse curves are valid for duty cycles to % provided T < 5. T may be calculated from the data in Figure 3. At high case or ambient J(pk) J(pk) temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Rev.O 5/6
6 LB856AWTG, BWTG LB857AWTG, BWTG, LB858AWTG, BWTG, S-LB856AWTG, BWTG S-LB857AWTG, BWTG, S-LB858AWTG, BWTG, S-7 / SOT-323 H E D e 3 2 e E A b A2 c NOTES:. DIMENSIONING AND TOLERANING PER ANSI Y4.5M, ONTROLLING DIMENSION: INH. MILLIMETERS INHES DIM MIN NOM MAX MIN NOM MAX A A A2.7 REF.28 REF b c D E e e.65 BS.26 BS L.425 REF.7 REF H E (.2) A L GENERI MARKING DIAGRAM SOLDERING FOOTPRINT* XX M XX M = Specific Device ode = Date ode = Pb Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot, may or may not be present SALE : mm inches Rev.O 6/6
General Purpose Transistors
General Purpose ransistors PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323/ S 7 which is designed for low power surface mount applications.
General Purpose Transistors
PNP Silicon hese transistors are designed for general purpose amplifier applications. hey are housed in the SO 323 which is designed for low power surface mount applications. Features Ideally suited for
TO-92 SOT-23 Mark: 83. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N44 MMBT44 2N44 / MMBT44 B E TO-92 SOT-23 Mark: 83 B E This device is designed for use as general purpose amplifiers and switches requiring collector currents to 5 ma. Absolute Maximum Ratings* TA = 25
Dual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
TO-92 SOT-23 Mark: 2A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N396 / MMBT396 / MMPQ396 / PZT396 N Discrete POWER & Signal Technologies 2N396 MMBT396 E B E TO-92 SOT-23 Mark: 2A B MMPQ396 PZT396 E B E B E B E B SOI-6 SOT-223 B E This device is designed for general
TO-92 SOT-23 Mark: 3G. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
MPSH MMBTH MPSH / MMBTH E B TO-92 SOT-2 Mark: G B E This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the µa to ma range to MHz, and low frequency
Low Noise Transistor LMBT5087LT3G. PNP Silicon LESHAN RADIO COMPANY, LTD. 1/7 ORDERING INFORMATION MAXIMUM RATINGS DEVICE MARKING
Low Noise Transistor PNP ilicon We declare that the material of product compliance with oh requirements. 3 ODEING INFOMATION Device Marking hipping 2Q 3/Tape & eel 1 2 LMBT587LT3G 2Q /Tape & eel OT 23
BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon
BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
General Purpose Transistors
General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
NSVT65011MW6T1G. Dual Matched General Purpose Transistor. NPN Matched Pair
ual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultrasmall SOT363 package ideally suited for portable products. They are assembled to create a pair of devices
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.
NSS40500UW3T2G. 40 V, 6.0 A, Low V CE(sat) PNP Transistor. 40 VOLTS 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 65 m
4, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current
NSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m
NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
BC856ALT1 Series. General Purpose Transistors. PNP Silicon. MAXIMUM RATINGS (T A = 25 C unless otherwise noted) MARKING DIAGRAM
Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit CollectorEmitter oltage BC856 BC857 BC858, BC859 CollectorBase oltage BC856 BC857
BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856
NSS12100UW3TCG. 12 V, 1 A, Low V CE(sat) PNP Transistor. 12 VOLTS, 1.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 400 m
NSSUWTG, A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high current
12 VOLTS, 6.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 45 m. MAXIMUM RATINGS (T A = 25 C) MARKING DIAGRAM
NSS16F8T1G 1, 6. A, Low E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( E(sat) ) and high
TO-92 SOT-23 Mark: ZF. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N426 MMBT426 2N426 / MMBT426 B E TO-92 SOT-23 Mark: ZF B E This device is designed for general purpose amplifier and switching applications at collector currents to µa as a switch and to ma as an amplifier.
COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
NSS20601CF8T1G 20 V, 8.0 A, Low V CE(sat) NPN Transistor
NSSF8TG V, 8. A, Low V E(sat) NPN Transistor ON Semiconductor's e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and
MMBT2907A. SOT-23 Mark: 2F. SOT-6 Mark:.2B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
B E PN297A TO-92 MMPQ297 E B E B E B E B SOI-6 MMBT297A This device is designed for use as a general purpose amplifier and switch requiring collector currents to 5 ma. Sourced from Process 63. SOT-23 Mark:
BC856ALT1G Series. General Purpose Transistors. PNP Silicon
General Purpose Transistors PNP Silicon Features S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices
2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier
2N396 / MMBT396 / PZT396 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of ma to ma. EB Ordering Information
General Purpose Transistor
General Purpose Transistor Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive
LOW V CE(SAT) PNP SURFACE MOUNT TRANSISTOR
DPLS16 LOW V E(ST) PNP SURFE MOUNT TRNSISTOR NEW PRODUT Features Epitaxial Planar Die onstruction omplementary NPN Type vailable (DNLS16) Surface Mount Package Suited for utomated ssembly Lead Free/RoHS
Dual Bias Resistor Transistors
DATA SHEET SEMICONDUCTOR MUN5DW Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
BC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
2N4403 / MMBT4403 PNP General-Purpose Amplifier
2N443 / MMBT443 PNP General-Purpose Amplifier Description This device is designed for use as a general-purpose amplifier and switch for collector currents to 5 ma. EB TO-92 SOT-23 Mark:2T B E Figure. 2N443
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
BV26 BV26 E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 8 ma. Sourced from Process 61. Absolute Maximum Ratings*
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
DDC (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
DD (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFAE MOUNT TRANSISTOR Features Epitaxial Planar Die onstruction omplementary PNP Types Available (DDA) Built-In Biasing Resistors Lead Free/RoHS ompliant
TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS
TIP7G, TIP8G, TIP5G High oltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
Darlington Amplifier Transistor
We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
BP52 BP52 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1. A. Sourced from Process
MUN5316DW1, NSBC143TPDXV6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN and PNP Transistors with Monolithic Bias Resistor Network
MUN3W, NSB3TPXV omplementary Bias Resistor Transistors R =.7 k, R2 = k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors R1 = 10 k, R2 = 47 k
MUN524W, NSB4YXV6, NSB4YP6 ual NPN Bias Resistor Transistors R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
FMB3906. pin #1. SuperSOT -6 Mark:.2A Dot denotes pin #1 T A. = 25 C unless otherwise noted. Symbol Parameter Value Units
S7-6 Mark:.2A FFB396 B2 E2 pin # 2 B E NOTE: The pinouts are symmetrical; pin and pin are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of
E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N441 MMBT441 2N441 / MMBT441 E B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 5 ma.
NJD1718, NJVNJD1718. Power Transistors. PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
Power Transistors PNP Silicon For Surface Mount pplications Designed for highgain audio amplifier and power switching applications. Features Low ollectoremitter Saturation oltage High Switching Speed Epoxy
MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6
MUN5333W, NSB43ZPXV6, NSB43ZPP6 omplementary Bias Resistor Transistors R = 4.7 k, R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed
7X = Device Marking. Symbol
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors
MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = 47 k
MUN5335W, NSB3JPXV6, NSB3JPP6 omplementary Bias Resistor Transistors R =. k, R = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
DPAK For Surface Mount Applications
SEMIONDUTOR TEHNIAL DATA Order this document by MJD/D DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications
MUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6. Complementary Bias Resistor Transistors R1 = 47 k, R2 = 47 k
MUN533W, NSB44EPXV6, NSB44EPP6 omplementary Bias Resistor Transistors R = 47 k, R2 = 47 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to
DZTA42. Features. Mechanical Data. Applications. Ordering Information (Note 4) Marking Information 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 DZTA42
3V NPN HIGH VOLTAGE TRANSISTOR IN Features BV EO > 3V I = 5mA High ollector urrent 2W Power Dissipation Low Saturation Voltage V E(sat) < 5mV @ 2mA omplementary PNP Type: DZTA92 Totally Lead-Free & Fully
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 k, R2 = 10 k
MUN53W, NSB4EPXV6, NSB4EPP6 omplementary Bias Resistor Transistors R = k, R2 = k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k
MUN532W, NSB24EPXV6, NSB24EPP6 omplementary Bias Resistor Transistors R = 22 k, R2 = 22 k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to
DCX(xxxx)U. Features. Mechanical Data. Ordering Information (Note 3 & 4) SMALL SIGNAL COMPLEMENTARY PRE-BIASED DUAL TRANSISTOR.
DX(xxxx)U SMALL SIGNAL OMPLEMENTARY PRE-BIASED DUAL TRANSISTOR Features Epitaxial Planar Die onstruction Built-In Biasing Resistors Surface Mount Package Suited for Automated Assembly Totally Lead-Free
SOT-23 Mark: 1A. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
B E TO-92 MMBT394 SOT-23 Mark: A B E / MMBT394 / PZT394 PZT394 SOT-223 B E NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends
MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS(1) ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMIONDUTOR TEHNIAL DATA Order this document by 2N393/D NPN Silicon *Motorola Preferred Device OLLETOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit ollector Emitter Voltage VEO 4 Vdc ollector
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba
MUN5331DW1, NSBC123EPDXV6. Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
MUN5W, NSBEPXV6 omplementary Bias Resistor Transistors R =. k, R =. k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Emitter Base Voltage V EBO 4. Vdc Collector Current
INSULATED GATE BIPOLAR TRANSISTOR. E n-channel
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.780 UltraFast IGBT Features Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency
BC817-16Q /-40Q. Mechanical Data. Description. Features. Ordering Information (Notes 4 and 5) Marking Information
45V NPN SMALL SIGNAL TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features BV EO > 45V I =.5A
BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
MJD (NPN) MJD7 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in
FMMT491Q. Mechanical Data. Description. Feature. Ordering Information (Notes 4 & 5) Marking Information 60V NPN MEDIUM POWER TRANSISTOR IN SOT23
60V NPN MEDIUM POWER TRANSISTOR IN Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Feature BV EO > 60V = 1A
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
E SOT-23 Mark: ED B This device is designed for general purpose amplifier applications at collector currents to 5 ma. Sourced from Process 19. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
B E TO-92 MMBT396 SOT-23 Mark: 2A B E / MMBT396 / PZT396 PZT396 SOT-223 B E PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents
IRGPC40S PD TO-247AC. Features V CES = 600V. V CE(sat) 1.8V. Description. Absolute Maximum Ratings. Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.692 IRGP4S Standard Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for line frequency operation (to 4Hz) See Fig. for urrent vs.
BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector
Top View Device Symbol Top View Pin-Out
YWW NEW PRODUT 500V PNP HIGH PERFORMANE TRANSISTOR IN Features BV EO > -500V I = -150mA High ontinuous urrent I M = -500mA Peak Pulse urrent Totally Lead-Free & Fully RoHS ompliant (Notes 1 & 2) Halogen
MJ21195 PNP MJ21196 NPN
MJ21195 PNP MJ21196 NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
MPSA Amplifier Transistor NPN Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4. Vdc Collector
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
TA = 25 C unless otherwise noted. Symbol Parameter Value Units
2N425 2N425 B E TO-92 This device is designed for use as general purpose amplifiers and switches requiring collector currents of µa to ma. Absolute Maximum Ratings* TA = 25 unless otherwise noted Symbol
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
TA = 25 C unless otherwise noted. Symbol Parameter Value Units. V V V CBO Collector-Base Voltage 2N5088 2N5089
B E N588 N589 TO-9 This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from µa to 5 ma. MMBT588 MMBT589 OT- Mark: Q / R B E Absolute Maximum Ratings*
MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
Bias Resistor Transistor
SEMICONDUCTOR TECHNICAL DATA DTC ~ 8 DTC ~ / /7 DTC / Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed
Distributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. PN2222A MMBT2222A PZT2222A EB E TO-92 SOT-23 B SOT-223 Mark:P B E NPN General
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor omponents Industries, LL dba
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
BCW68G PNP General-Purpose Amplifier
BW68G PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at currents to 5 ma. Sourced from process 63. SOT-23 Mark: DG B E March
N Channel Enhancement Mode Silicon Gate
SEMIONDUTOR TEHNIAL DATA Order this document by MGPN6ED/D N hannel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and
SOT-563 Plastic-Encapsulate Transistors
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC T SOT-563 Plastic-Encapsulate Transistors BC847BVN DUAL TRANSISTOR (NPN+PNP) SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W)
BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector
MD9 (PNP) MD3 (NPN) ÎÎ ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) ÎÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS Î Col
MD9 (PNP) MD3 (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Applications
MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
MJD (NPN) MJD7 (PNP) Preferred Device Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications
BC846ALT1G Series. General Purpose Transistors. NPN Silicon
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: > 4 V ESD Rating Machine Model: > 4 V S and NSV Prefix for Automotive and Other
LMUN2211LT1 SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
C 2 B 1 E 1 E 2 B 2 C 1. Top View
MMDT446 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 424-Type NPN One 426-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification
MJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
MJD (NPN) MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
MMUN2111LT1 SERIES. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
DSS5240T. Features. Mechanical Data NEW PRODUCT. Application. Ordering Information (Note 4 & 5) Marking Information
YM NEW PRODUT 40V PNP LOW STURTION TRNSISTOR IN SOT23 Features BV EO > -40V I = -2 high ontinuous ollector urrent I M = -3 Peak Pulse urrent Low Saturation Voltage -225mV Max @ I = -. R E(ST) = 90mΩ at