NSVT65011MW6T1G. Dual Matched General Purpose Transistor. NPN Matched Pair

Transcription

1 ual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultrasmall SOT363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are urrent Mirrors; ifferential, Sense and Balanced Amplifiers; Mixers; etectors and Limiters. omplementary PNP equivalent NST65010MW6T1G is available. Features urrent Gain Matching to 10% BaseEmitter Voltage Matched to 2 ropin Replacement for Standard evice NSV Prefix for Automotive and Other Applications Requiring Unique Site and ontrol hange Requirements; AEQ101 Qualified and PPAP apable These evices are PbFree, Halogen Free/BFR Free and are RoHS ompliant MAXIMUM RATINGS Rating Symbol Value Unit ollectoremitter Voltage V EO 65 V ollectorbase Voltage V BO 80 V EmitterBase Voltage V EBO 6.0 V ollector urrent ontinuous I 100 madc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL HARATERISTIS haracteristic Symbol Max Unit Total evice issipation Per evice FR5 Board (Note 1) erate Above 25 Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR5 = x 0.75 x in P mw mw/ R JA 328 /W T J, T stg 55 to +150 Q 1 (3) SOT363 ASE 419B STYLE 1 (2) (1) Q 2 (4) (5) (6) ORERING INFORMATION evice Package Shipping NST65011MW6T1G MARKING IAGRAMS 2G = evice ode M = ate ode = PbFree Package (Note: Microdot may be in either location) NSVT65011MW6T1G 2G M SOT363 (PbFree) SOT363 (PbFree) 3,000 / Tape & Reel 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BR8011/. Semiconductor omponents Industries, LL, 2015 July, 2015 Rev. 0 1 Publication Order Number: NST65011MW6/

2 ELETRIAL HARATERISTIS ( unless otherwise noted) haracteristic Symbol Min Typ Max Unit OFF HARATERISTIS ollectoremitter Breakdown Voltage, (I = 10 ma) V (BR)EO 65 V ollectoremitter Breakdown Voltage, (I = 10 A, V EB = 0) V (BR)ES 80 V ollectorbase Breakdown Voltage, (I = 10 A) V (BR)BO 80 V EmitterBase Breakdown Voltage, (I E = A) V (BR)EBO 6.0 V ollector utoff urrent (V B = 30 V) (V B = 30 V, T A = 150 ) I BO 15 na A ON HARATERISTIS urrent Gain (I = 10 A, V E = V) (I = ma, V E = V) (I = ma, V E = V) (Note 2) h FE h FE(1)/ h FE(2) ollectoremitter Saturation Voltage (I = 10 ma, I B = 0.5 ma) (I = 100 ma, I B = ma) V E(sat) BaseEmitter Saturation Voltage (I = 10 ma, I B = 0.5 ma) (I = 100 ma, I B = ma) V BE(sat) BaseEmitter On Voltage (I = ma, V E = V) (I = 10 ma, V E = V) (I = ma, V E = V) (Note 3) V BE(on) V BE(1) V BE(2) SMALLSIGNAL HARATERISTIS urrentgain Bandwidth Product, (I = 10 ma, V E = 5 Vdc, f = 100 MHz) f T 100 MHz Output apacitance, (V B = 10 V, f = MHz) ob 4.5 pf Noise Figure, (I = 0.2 ma, V E = 5 Vdc, R S = 2 k, f = 1 khz, BW = Hz) NF 10 db Product parametric performance is indicated in the Electrical haracteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical haracteristics if operated under different conditions. 2. h FE(1) /h FE(2) is the ratio of one transistor compared to the other transistor within the same package. The smaller h FE is used as numerator. 3. V BE(1) V BE(2) is the absolute difference of one transistor compared to the other transistor within the same package

3 TYPIAL HARATERISTIS hfe, NORMALIZE URRENT GAIN V E = 10 V V, VOLTAGE (VOLTS) V I /I B = 10 V V E = 10 V V I /I B = Figure 1. Normalized urrent Gain Figure 2. Saturation and On Voltages VE, OLLETOR-EMITTER VOLTAGE (V) I = 10 ma I = 20 ma I = 50 ma I B, BASE URRENT (ma) I = ma I = 100 ma 20 VB, TEMPERATURE OEFFIIENT (/ ) θ -55 to I, OLLETOR URRENT (ma) Figure 3. ollector Saturation Region Figure 4. BaseEmitter Temperature oefficient, APAITANE (pf) ib 3.0 ob V R, REVERSE VOLTAGE (VOLTS) f, T URRENT-GAIN - BANWITH PROUT (MHz) V E = 10 V Figure 5. apacitances Figure 6. urrentgain Bandwidth Product 3

4 TYPIAL HARATERISTIS I, OLLETOR URRENT (ma) s T J = 25 BONING WIRE LIMIT THERMAL LIMIT SEON BREAKOWN LIMIT 3 ms The safe operating area curves indicate I V E limits of the transistor that must be observed for reliable operation. ollector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 7 is based upon T J(pk) = 150 ; T or T A is variable depending upon conditions V E, OLLETOR-EMITTER VOLTAGE (V) Figure 7. Active Region Safe Operating Area 4

5 PAKAGE IMENSIONS E 2X bbb H e 6X ccc A B TOP VIEW SIE VIEW A1 2X E1 aaa H aaa 2X 3 TIPS 6X b ddd M A2 A L2 ETAIL A SEATING PLANE S88 (SOT363) ASE 419B02 ISSUE Y A-B REOMMENE SOLERING FOOTPRINT* 6X 0.30 H L ETAIL A EN VIEW GAGE PLANE c 6X 0.66 NOTES: 1. IMENSIONING AN TOLERANING PER ASME Y14.5M, ONTROLLING IMENSION: MILLIMETERS. 3. IMENSIONS AN E1 O NOT INLUE MOL FLASH, PROTRUSIONS, OR GATE BURRS. MOL FLASH, PROTRU- SIONS, OR GATE BURRS SHALL NOT EXEE 0.20 PER EN. 4. IMENSIONS AN E1 AT THE OUTERMOST EXTREMES OF THE PLASTI BOY AN ATUM H. 5. ATUMS A AN B ARE ETERMINE AT ATUM H. 6. IMENSIONS b AN c APPLY TO THE FLAT SETION OF THE LEA BETWEEN 0.08 AN 0.15 FROM THE TIP. 7. IMENSION b OES NOT INLUE AMBAR PROTRUSION. ALLOWABLE AMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXESS OF IMENSION b AT MAXIMUM MATERIAL ONI- TION. THE AMBAR ANNOT BE LOATE ON THE LOWER RAIUS OF THE FOOT. MILLIMETERS IM MIN NOM MAX A 1.10 A INHES MIN NOM MAX A b E E e 0.65 BS BS L L BS BS aaa bbb ccc ddd STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. OLLETOR 1 4. EMITTER 1 5. BASE 1 6. OLLETOR PITH IMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution enter for ON Semiconductor P.O. Box 5163, enver, olorado USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NST65011MW6/