2SB1203/2SD1803. Relay drivers, high-speed inverters, converters, and other general high-current switching applications

Transcription

1 Ordering number : EN8C SB/SD8 SANYO Semiconductors DATA SHEET SB/SD8 Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage High current and high ft Excellent linearity of hfe Fast switching speed Small and slim package making it easy to make SB/SD8-applied sets smaller Specifications ( ): SB Absolute Maximum Ratings at Ta= C PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)6 V Collector-to-Emitter Voltage VCEO (--) V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--) A Collector Current (Pulse) ICP (--)8 A Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) SBS-E SBS-H SDT-E SDT-H SB8S-E SB8S-H SD8T-E SD8T-H : Base : Collector : Emitter : Collector SANYO : TP to.. Continued on next page. SBS-TL-E SBS-Tl-H SBT-TL-E SBT-Tl-H SB8S-TL-E SB8S-Tl-H SB8T-TL-E SB8T-Tl-H : Base : Collector : Emitter : Collector SANYO : TP-FA Product & Package Information Package : TP Package : TP-FA JEITA, JEDEC : SC-6, TO- JEITA, JEDEC : SC-6, TO- Minimum Packing Quantity : pcs./bag Minimum Packing Quantity : pcs./reel Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA), B D8, RANK LOT No. RANK LOT No. TL SB SD8 66EA TKIM TA-, TA-/NTN (KT)/998HA (KT)/89MO/9AT, TS No.8-/

2 SB/SD8 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC W Tc= C W Junction Temperature Tj C Storage Temperature Tstg -- to + C Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)V, IE=A (--) μa Emitter Cutoff Current IEBO VEB=(--)V, IC=A (--) μa DC Current Gain hfe VCE=(--)V, IC=(--).A * * hfe VCE=(--)V, IC=(--)A Gain-Bandwidth Product ft VCE=(--)V, IC=(--)A ()8 MHz Output Capacitance Cob VCB=(--)V, f=mhz (6) pf Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)A, IB=(--).A (--8) (--) mv Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)A, IB=(--).A (--).9 (--). V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)μA, IE=A (--)6 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)mA, RBE= (--) V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)μA, IC=A (--)6 V Turn-On Time ton () ns Storage Time tstg See specified Test Circuit. () ns Fall Time tf () ns * : The SB/SD8 are classified by.a hfe as follows : Rank Q R S T hfe to to to 8 to Switching Time Test Circuit PW= s D.C. % IB IB OUTPUT INPUT VR RB RL + + F F VBE= --V VCC=V IC=IB= --IB=A For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo SBS-E TP pcs./bag Pb Free SBS-H TP pcs./bag Pb Free and Halogen Free SDT-E TP pcs./bag Pb Free SDT-H TP pcs./bag Pb Free and Halogen Free SB8S-E TP pcs./bag Pb Free SB8S-H TP pcs./bag Pb Free and Halogen Free SD8T-E TP pcs./bag Pb Free SD8T-H TP pcs./bag Pb Free and Halogen Free SBS-TL-E TP-FA pcs./reel Pb Free SBS-Tl-H TP-FA pcs./reel Pb Free and Halogen Free SBT-TL-E TP-FA pcs./reel Pb Free SBT-Tl-H TP-FA pcs./reel Pb Free and Halogen Free SB8S-TL-E TP-FA pcs./reel Pb Free SB8S-Tl-H TP-FA pcs./reel Pb Free and Halogen Free SB8T-TL-E TP-FA pcs./reel Pb Free SB8T-Tl-H TP-FA pcs./reel Pb Free and Halogen Free No.8-/

3 SB/SD SB From top --ma --9mA --8mA --ma --6mA --ma --ma --ma --ma --ma SD8 From top ma ma ma ma ma ma ma ma ma ma I B = Collector-to-Emitter Voltage, V CE -- V ITR98 -- SB ma --ma --ma --ma --ma --ma I B = Collector-to-Emitter Voltage, V CE -- V ITR98 SD8 ma ma ma ma ma ma I B = Collector-to-Emitter Voltage, V CE -- V ITR98 IC -- VBE --6 SB V CE = --V -- I B = 6 8 Collector-to-Emitter Voltage, V CE -- V ITR98 IC -- VBE 6 SD8 V CE =V C Ta= C -- C C Ta= C -- C DC Current Gain, h FE Base-to-Emitter Voltage, V BE -- V ITR98 hfe -- IC SB V CE = --V Ta= C C -- C DC Current Gain, h FE Base-to-Emitter Voltage, V BE -- V ITR98 hfe -- IC SD8 V CE =V Ta= C C -- C ITR986 ITR98 No.8-/

4 SB/SD8 Gain-Bandwidth Product, ft -- MHz ft -- IC SB V CE = --V Gain-Bandwidth Product, ft -- MHz ft -- IC SD8 V CE =V ITR988 Cob -- VCB SB f=mhz.. ITR989 Cob -- VCB SD8 f=mhz Output Capacitance, Cob -- pf Output Capacitance, Cob -- pf Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv Collector-to-Base Voltage, V CB -- V ITR99 VCE(sat) -- IC SB I C / I B = Ta= C -- C C Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv. ITR99 Collector-to-Base Voltage, V CB -- V VCE(sat) -- IC Ta= C -- C C SD8 I C / IB= Base-to-Emitter Saturation Voltage, V BE (sat) -- V ITR99 VBE(sat) -- IC -- SB I C / I B = --. Ta= -- C C C Base-to-Emitter Saturation Voltage, V BE (sat) -- V... ITR99 VBE(sat) -- IC SD8 SD66 I C / I B =. Ta= -- C C C Collector Current, I C A ITR99 ITR99 No.8-/

5 SB/SD8 I CP I C. ms A S O DC operation Ta= C SB / SD8 ms ms DC operation Tc= C. Tc= C Single pulse For PNP, the minus sign is omitted.... Collector-to-Emitter Voltage, V CE -- V ITR996 Collector Dissipation, P C -- W 6 8 PC -- Ta SB / SD8 Ideal heat dissipation No heat sink Ambient Temperature, Ta -- C ITR99 No.8-/

6 SB/SD8 Taping Specification SBS-TL-E, SBS-Tl-H, SBT-TL-E, SBT-Tl-H, SB8S-TL-E, SB8S-Tl-H, SB8T-TL-E, SB8T-Tl-H No.8-6/

7 SB/SD8 Outline Drawing Land Pattern Example SBS-TL-E, SBS-Tl-H, SBT-TL-E, SBT-Tl-H, SB8S-TL-E, SB8S-Tl-H, SB8T-TL-E, SB8T-Tl-H Mass (g) Unit.8 * For reference mm Unit: mm No.8-/