Small Signal General Purpose Transistors (PNP) BC556/BC557/BC558. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)

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1 Small Signal General Purpose Transistors (PNP) Small Signal General Purpose Transistors (PNP) Features PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance Mechanical Data TO-92 Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description BC556 BC557 BC558 Unit VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous 100 ma Ptot Total Device Dissipation Alumina Substrate TA=25 C 625 mw/ C TJ, TSTG Junction and Storage Temperature Range -55 to +150 C TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFAX (800) (661) Page 1 of 7

2 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO IEBO Description Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-off Current Collector-Base Cutoff Current Emitter-Base Cutoff Current BC556 BC557 BC558 Unit Conditions Min. Max. Min. Max. Min. Max V IC=-2mA, IB= V IC=100µA, IE= V IE=100µA, IC= μa VCE=-60V, IB=0 VCE=-40V, IB=0 VCE=-25V, IB= μa VCB=-70V, IE=0 VCB=-45V, IE=0 VCB=-25V, IE= μa VEB=-5.0V, IC=0 On Characteristics Symbol Description BC556 BC557 BC558 Min. Max. Min. Max. Min. Max. Unit Conditions hfe D.C. Current Gain VCE=-5V, IC=-2mA VCE(sat) VBE(sat) ft Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency V IC=-100mA, IB=-5mA V IC=-100mA, IB=-5mA MHz VCE=-5V, IC=-10mA, f=100mhz hfe Classification Classification BC556A BC557A BC558A BC556B BC557B BC558B BC557C BC558C hfe 120~ ~ ~800 Page 2 of 7

3 Typical Characteristics Curves BC557/BC558 Fig.1- Normalized DC Current Gain Fig.2- Saturation and On Voltages hfe, Normalized DC Current Gain V, Voltage (V) IC, Collector Current (madc) IC, Collector Current (madc) Fig.3- Collector Saturation Region Fig.4- Base-Emitter Temperature Coefficient VCE, Collector-Emitter Voltage (V) θvb, Temperature Coefficient (mw/ C) IB, Base Current (ma) Page 3 of 7

4 Fig.5- Capacitance Fig.6- Current Gain Bandwidth Product C, Capacitance (pf) ft, Current Gain Bandwidth Product (MHz) VR, Reverse Voltage (V) IC, Collector Current (madc) BC556 Fig.7- Normalized DC Current Gain Fig.8- On Voltages hfe, Normalized DC Current Gain V, Voltage (V) IC, Collector Current (A) Page 4 of 7

5 Fig.9- Collector Saturation Region Fig.10- Base-Emitter Temperature Coefficient VCE, Collector-Emitter Voltage (V) θvb, Temperature Coefficient (mw/ C) IB, Base Current (ma) Fig.11- Capacitance Fig.12- Current Gain Bandwidth Product C, Capacitance (pf) ft, Current Gain Bandwidth Product (MHz) VR, Reverse Voltage (V) Page 5 of 7

6 Dimensions in mm 1. EMITTER 2. BASE 3. COLLECTOR TO-92 Page 6 of 7

7 How to contact us: US HEADQUARTERS WEST HARRISON PARKAWAY, VALENCIA, CA Tel: (800) TAITRON (800) (661) Fax: (800) TAITFAX (800) (661) TAITRON COMPONENTS MEXICO, S.A.DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P MEXICO Tel: Fax: TAITRON COMPONENTS INCORPORATED TAIWAN, TAIPEI 5F-2, NO. 77, SEC. 1, HSIN TAI WU ROAD, HSI-CHIH, TAIPEI HSIEN, TAIWAN R.O.C. Tel: Fax: TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN AN ROAD, SUITE 1503, SHANGHAI, , CHINA Tel: Fax: Page 7 of 7