Standard 12A Silicon Controlled Rectifier TCR12FWMT. Features. Mechanical Data. Maximum Ratings

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1 Standard 12A Silicon Controlled Rectifier Standard 12A Silicon Controlled Rectifier Features Sensitive gate triggering with low gate current drive Glass Passivated die junctions High surge current capability and low on stage voltage Allowing direct drive from μc and other logic circuit MSL level 3 RoHS compliant TO-220AB Mechanical Data Case: TO-220AB, molded plastic Epoxy: Plastic package has UL flammability classification 94V-0 Terminals: Matte tin plated Lead, solderable per MIL-STD-750, Method 2026 Mounting Torque: Weight: 0.8N.m 0.08 ounces, 2.24 grams Maximum Ratings Symbol Description Value Unit Conditions IT(RMS) On-state RMS Current (full sine wave) 12 A TC=90 C VDRM/VRRM Off-state Peak Repetitive Voltage 600 V ITSM On-state Non-repetitive Peak Surge Current 100 A Full Cycle,50Hz, (t=20ms) I 2 t Circuit Fusing 60 A 2 s tp=10ms, Half Cycle Di/dt 50 A/μs F=120Hz, TJ=125 C IGM Peak Gate Current 4 A tp=20us, TJ=125 C PG(AV) Average Gate Power Dissipation 1.0 W TJ=125 C TJ Operating Junction Temperature -40 to +150 C -- TSTG Storage Temperature -40 to +125 C -- TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFAX (800) (661) Page 1 of 7

2 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Value Symbol Description Unit Min Max Conditions IGT Gate Trigger Current ma VD=12VDC, IT =0.1A VGT Gate Trigger Voltage V VD = 12VDC, IT =0.1A IH Holding Current ma VD = 12VDC, IT =0.1A dv/dt Critical Rate of Rise of off-state voltage V/μs VD=0.67 x VDRM VTM Peak On-state Voltage V IT=24 A IDRM -- 5 μa VD=VDRM, TJ=25 C Off-State peak repetitive blocking current IRRM -- 2 ma VD=VDRM, TJ=125 C Thermal Resistances Symbol Description Value Unit Conditions Rth(j-c) Thermal Resistance Junction-Case(AC) 1.3 C /W Rth(j-a) Thermal Resistance Junction-Ambient 60 C /W Page 2 of 7

3 Typical Characteristics Curves Standard 12A Silicon Controlled Rectifier Maximum Power Dissipation P (W) Fig.1-Maximum power dissipation versus RMS on-state current (full cycle) RMS On-state Current (full cycle) IT (RMS) (A) RMS On-state Current I T (RMS) (A) Fig.2- RMS on-state current versus Case temperature (full cycle) Case Temperature (full cycle) T C ( C ) Fig.3-Surge peak on-state current versus Number of cycles Fig.4- On-state characteristics (maximum values) Surge Peak On-state Current ITSM (A) On-state Current ITM (A) Number of Cycles On-State Voltage VTM (V) Page 3 of 7

4 Fig.5-Relative variation of gate trigger current, holding current and latching versus Junction temperature (typical values) Relative Variation of Gate Trigger Current, Holding Current and Latching IGT,IH,IL[TJ]/IGT,IH,IL,[TJ=25 C ] Junction Temperature (typical values) T J ( C) Marking information Page 4 of 7

5 Dimensions in mm TO-220AB REF Dimensions Dimensions REF Min Max Min Max A e a1 3.75Typ. F a ØI B I b L b I C I c M 2.6Typ. c Page 5 of 7

6 Packing Information Quantity PCS per Tube PCS per Inner box PCS per Carton -Tube 50 1,000 5,000 How to order: TCR 12 FW M T TU Packing: TU: Tube, RoHS Factory Location Code Outline Code: T: TO-220AB, Off-State Voltage Code: M: 600V I GT Code: FW Trigger Current: 15 ma, High Commutation Type. On-State Current: 12 Amp Taitron Silicon Controlled Rectifier Page 6 of 7

7 How to contact us USA HEADQUARTERS WEST HARRISON PARKWAY, VALENCIA, CA Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFAX (800) (661) TAITRON COMPONENTS INCORPORATED TAIWAN BRANCH 6F., NO.190, SEC. 2, ZHONGXING RD., XINDIAN DIST., NEW TAIPEI CITY 23146, TAIWAN R.O.C. Tel: Fax: TAITRON COMPONENT TECHNOLOG SHANGHAI CORPORATION SUITE 1503, METROBANK PLAZA, 1160 WEST YAN AN ROAD, SHANGHAI, , CHINA Tel: Fax: Page 7 of 7