R L = 60 Ω. DC Gate Trigger Voltage. = 1 kω T J = 125 C = V DRM. / V RRM Exponential Waveform R GK I G. = 10mA PW = 15μsec I T. = 3.

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1 S602ECS RoHS Description This new.8 A sensitive gate SCR in an TO-92 package with a GAK pin out, offers a high static component series with a high static dv/dt and a low turn off (t q ) time by the use of small die planar construction implementation. All SCR s junctions are glass-passivated to ensure long term reliability and parametric stability. Features Main Features Symbol Value Unit I T(RMS) A V DRM /V RRM 600 V I GT 0 µa Surge capability >15Amps High dv/dt noise immunity Improved turn-off time (t q ) 35 μs Schematic Symbol TO-92 G-A-K pinout Sensitive gate for direct microprocessor interface RoHS compliant and Halogen-Free A/2 Applications The S602ECS is specifically designed for Gas Ignition applications that require high pulse surge current capability. G/1 K/3 Absolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) T C = 65 C A I T(AV) Average on-state current T C = 65 C 0.95 A I TSM Non repetitive surge peak on-state current (Single cycle, initial = 25 C) F = 50 Hz 14.0 F = 60 Hz 16.8 A I 2 t I 2 t Value for fusing t p = ms F = 50 Hz 0.78 t p = 8.3 ms F = 60 Hz 0.93 A 2 s di/dt Critical rate of rise of on-state current IG = ma = 125 C 50 A/μs I GM Peak gate current t p = μs = 125 C A P G(AV) Average gate power dissipation = 125 C 0.1 W T stg Storage junction temperature range -40 to 150 C Operating junction temperature range -40 to 125 C S602ECS Sx02xS Series

2 Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol Description Test Conditions Min S602ECS Max Unit I GT DC Gate Trigger Current V D = 12V 20 0 µa V GT DC Gate Trigger Voltage R L = 60 Ω 0.8 V V GRM Peak Reverse Gate Voltage I RG = μa 5 V I H Holding Current 3 ma (dv/dt)s Critical Rate-of-Rise of Off-State Voltage = 125 C V D = V DRM / V RRM Exponential Waveform 50 V/μs t q Turn-Off Time = V 35 μs t gt Turn-On Time I G = ma PW = 15μsec I T = 3.0A (pk) 3 μs Static Characteristics ( = 25 C, unless otherwise specified) Symbol Description Test Conditions Min Value Max Unit V TM Peak On-State Voltage I TM = 4A (pk) 1.8 V I DRM Off-State Current, Peak Repetitive = 25 V D = V DRM = 125 V D = V DRM 5 μa 500 μa Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (AC) I T = A (RMS), 60Hz AC resistive load 50 C/W R θ(j-a) Junction to ambient condition, 0% conduction. 160 C/W Figure 1: Normalized DC Gate Trigger Current Figure 2: Normalized DC Holding Current Normalized Gate: Trigger Current I T j / I 25ºC 2.0 Normalized Holding Current (I / I C) Junction Temperature ( Junction Temperature (

3 Figure 3: Normalized DC Gate Trigger Voltage Figure 4: On-State Current vs. On-State Voltage (Typical) Normalized Gate: Trigger Voltage (V T j / V 25ºC) Junction Temperature ( Instantaneous On-state Current (IT) Amps Instantaneous On-state Voltage (VT) Volts Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum Allowable Case Temperature vs. On-State Current Average Power Dissipation, P D (Watts) RMS On-state Current [I T(RMS) ] (Amps) Max Allowable Case Temperature, T C (Celsius) CASE TEMPERATURE: Measured as shown on dimensional drawings RMS On-state Current [I T (RMS) ] (Amps) Figure 6: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-State Current (I TSM ) Amps A Devices Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [I T(RMS) ]: Max Rated Value at Specific Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration Full Cycle

4 Figure 7: Typical DC Gate Trigger Current with RGK Figure 8: Typical DC Holding Current with RGK 0 IGT (ma) Normalized Gate: Trigger Voltage (V T j / V 25ºC) RGK=Ω RGK=0Ω No RGK Junction Junction Temperature Temperature (TJ) --(T ( C) J 0 Instantaneous On-state IH (ma) Current (IT) Amps 1 8 RGK=0Ω RGK=Ω No RGK Junction 1.2Temperature 1.4 (TJ) ( C) Instantaneous On-state Voltage (VT) Volts Figure 9: Typical Turn Off Time with RGK Figure : Typical Static DV/DT with RGK 35 Turn off time Tq (µs) Average Power Dissipation, P D (Watts) RGK=0Ω RGK=Ω Junction Temperature (TJ) -- ( C) RMS On-state Current [I T(RMS) ] (Amps) Static dv/dt (V/μs) Max Allowable Case Temperature, T C (Celsius) CASE TEMPERATURE: Measured as shown on dimensional drawings RGK=0Ω RGK=220Ω RMS On-state 65 Current [I 85 T (RMS) ] (Amps) Junction Temperature (TJ) -- ( C)

5 Temperature Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 150 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs Average ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Time (min to max) (t s ) seconds Peak Temperature (T P ) /-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations 0% Matte Tin-plated. UL Recognized epoxy meeting flammability rating V-0. Copper Alloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test AC Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-40, Cond A Applied Peak AC 125 C for 08 hours MIL-STD-750, M-51, 0 cycles; -40 C to +150 C; 15-min dwell-time EIA / JEDEC, JESD22-A1 08 hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-31, 08 hours; 150 C 08 hours; -40 C MIL-STD-750 Method 2031 ANSI/J-STD-002, category 3, Test A MIL-STD-750, M-2036 Cond E

6 A T MEASURING POINT C Inches Millimeters Min Max Min Max B A B C ANODE SEATING PLANE C D E F G GATE G H I CATHODE H I D J J F E F Packing Options Part Number Marking Weight Packing Mode Base Quantity S602ECS S602ECS g Bulk 2500 S602ECSAP S602ECS g Ammo Pack 2000 S602ECSRP S602ECS g Tape & Reel 2000 Part Numbering System Part Marking System S6 02 EC S xx SCR SERIES PACKING TYPE Blank: Bulk RP: Reel Pack VOLTAGE AP: Ammo Pack 6: 600V SENSITIVITY S: 0µA Sensitive SCR CURRENT 02: A PACKAGE TYPE EC: TO-92 TO92 SOT223 Line1 = Littelfuse Part Number Line2 = continuation Littelfuse P Y = Last Digit of Calendar Year M = Letter Month Code (A-L for Jan L = Location Code DD = Calendar Date

7 TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EIA-468-C Standards 1.6 (4) (6.0) 0.02 () (2.5) MAX 1.26 (32.0) (18.0) (9.0) (12.7) 0.1 (2.54) 14.17(360.0) Gate Cathode 0.2 (5.08) Anode DIA (4.0) Flat up 1.97 (50.0) Direction of Feed are in inches (and millimeters). TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications Meets all EIA-468-C Standards 1.62 (41.2) (18.0) (6.0) (9.0) 0.02 () (12.7) Directionof Feed 0.1 (2.54) Gate Cathode 0.2 (5.08) Anode (2.5) MAX DIA (4.0) Flat down 1.27 (32.2) 25 Devices per fold 1.85 (47.0) 12.2 (3.0) 1.85 (47.0) are in inches (and millimeters) (338.0) Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at