Teccor brand Thyristors 12 Amp Standard SCR. Symbol Parameter Test Conditions SRR6012x1 Unit I T(RMS) RMS on-state current T C

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1 RoHS Description Excellent unidirectional switches for phase control and general switching applications such as heating, motor control controls, converters / rectifiers and capacitive discharge ignitions. Sensitive gate SCRs are easily triggered with microamps of current as furnished by sense coils, proximity switches, and microprocessors. Standard phase control SCRs are triggered with few milliamperes of current at less than 1.5V potential. Features & Benefits Main Features Symbol Value Unit I T(RMS) 12 A V DRM /V RRM 600 V I GT 6 ma RoHS compliant Glass passivated junctions Applications Voltage capability up to 600 V Surge capability up to 120 A Typical applications includes capacitive discharge system for motorcycle engine CDI, portable generator engine ignition, strobe lights and nailers, as well as generic rectifiers, battery voltage regulators and converters. Also controls for power tools, home/brown good and white goods appliances. Schematic Symbol A K G Absolute Maximum Ratings Standard SCRs Symbol Parameter Test Conditions SRR6012x1 Unit I T(RMS) RMS on-state current T C = 5 C 12 A I T(AV) Average on-state current T C = 5 C 7.68 A I TSM Peak non-repetitive surge current single half cycle; f = 50Hz; (initial) = 25 C single half cycle; f = 60Hz; (initial) = 25 C I 2 t I 2 t Value for fusing t p = 8.3 ms 60 A 2 s di/dt Critical rate-of-rise of on-state current f = 60 Hz = C A/μs I GM Peak gate current = C 2 A P G(AV) Average gate power dissipation = C 0.5 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to C 120 A

2 Electrical Characteristics ( = 25 C, unless otherwise specified) Standard SCRs I GT Symbol Test Conditions SRR6012x1 Unit V D = 12V R L = 60 Ω MIN. 1.5 ma MAX. 6 ma V GT V D = 12V R L = 60 Ω MAX. 1.5 V V dv/dt D = V DRM ; gate open; = C 300 MIN. V/μs V D = V DRM ; gate open; = C 225 V GD V D = V DRM ; R L = 3.3 kω; = C MIN. 0.2 V I H I T = 200mA (initial) MAX. 30 ma t q (1) MAX. 35 μs t gt I G = 2 x I GT ; PW = 15µs; I T = 20A TYP. 2 μs NOTE: (1) I T =2A; t p =50µs; dv/dt=5v/µs; di/dt=-30a/µs Static Characteristics Symbol Test Conditions Value Unit V TM I T = 24A; t p = 380 µs MAX. 1.8 V I DRM / I RRM V DRM / V RRM = 25 C = C MAX. 200 = C 500 μa Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (AC) 1.45 C/W Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature (Sensitive SCR) Figure 2: Normalized DC Gate Trigger Current vs. Junction Temperature (Standard SCR) Ratio of I GT / I GT ( 3.0 Ratio of I GT / I GT ( Junction Temperature ( Junction Temperature (

3 Figure 3: Normalized DC Gate Trigger Voltage vs. Junction Temperature Figure 4: Normalized DC Holding Current vs. Junction Temperature Ratio of V GT / V GT ( Ratio of I H / I H ( Junction Temperature ( Junction Temperature ( Figure 5: On-State Current vs. On-State Voltage (Typical) Figure 6: Power Dissipation (Typical) vs. RMS On-State Current Instantaneous On-state Current (i T ) Amps 32 = 25ºC Instantaneous On-state Voltage (v T ) Volts Average On-State Power Dissipation [P D(AV) ] -- (Watts) RMS On-State Current [I T(RMS) ] -- (Amps) Figure 7: Maximum Allowable Case Temperature vs. RMS On-State Current Figure 8: Maximum Allowable Case Temperature vs. Average On-State Current Maximum Allowable Case Temperature (T C ) - C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive 75 CONDUCTION ANGLE: 180 FREE AIR RATING RMS On-State Current [I T(RMS) ] - Amps Maximum Allowable Case Temperature (T C ) - C CURRENT WAVEFORM: Sinusoidal 80 LOAD: Resistive or Inductive 75 CONDUCTION ANGLE: 180 FREE AIR RATING Average On-State Current [I T(AVE) ] - Amps

4 Figure 9: Peak Capacitor Discharge Current Figure : Peak Capacitor Discharge Current Derating Peak Discharge Current (I TM ) - Amps I TRM Normalized Peak Current t W Pulse Current Duration (t W ) - ms Case Temperature (T C ) - C Figure 11: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (I TSM ) Amps 0 SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration -- Full Cycles

5 Temperature Teccor brand Thyristors Soldering Parameters T P t P Reflow Condition Pb Free assembly Ramp-up - Temperature Min (T s(min) ) 150 C T L T S(max) t L Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) secs Average ramp up rate (Liquidus Temp) (T L ) to peak T S(max) to T L - Ramp-up Rate Reflow - Temperature (T L ) (Liquidus) 217 C 5 C/second max 5 C/second max - Temperature (t L ) seconds T S(min) 25 t S Preheat time to peak temperature Ramp-down Time Peak Temperature (T P ) /-5 C Time within 5 C of actual peak Temperature (t p ) seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations % Matte Tin-plated UL recognized epoxy meeting flammability classification V-0 Copper Alloy Careful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test AC Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Autoclave Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-750, M-40, Cond A Applied Peak AC C for 8 hours MIL-STD-750, M-51, cycles; -40 C to +150 C; 15-min dwell-time EIA / JEDEC, JESD22-A1 8 hours; 320V - DC: 85 C; 85% rel humidity MIL-STD-750, M-31, 8 hours; 150 C 8 hours; -40 C EIA / JEDEC, JESD22-A2 168 hours (121 C at 2 ATMs) and % R/H MIL-STD-750 Method 2031 ANSI/J-STD-002, category 3, Test A MIL-STD-750, M-2036 Cond E

6 Dimensions TO-252AA (D-Package) D-PAK Surface Mount Anode A B E D T C MEASURING POINT Dimension Inches Millimeters Min Typ Max Min Typ Max A B C Cathode Anode I G P Q GATE F O L N AREA: 40 IN 2 M K J H C D E F G H I J K L M N O P Q Packing Options Part Number Marking Weight Packing Mode Base Quantity SRR6012D1TP SRR6012D1 0.3 g Tube 750 (75 per tube) SRR6012D1RP SRR6012D1 0.3 g Embossed Carrier 2500 Part Numbering System Part Marking System DEVICE TYPE SRR: SCR VOLTAGE RATING 60 : 600V SRR D 1 RP PACKAGING OPTIONS RP: Reel Pack TP: Tube Pack SRR6012D1 SENSITIVE TYPE 1: 6mA YMLDD CURRENT 12: 12A PACKAGE TYPE D:TO-252 (DPAK) Date Code Marking Y:Year Code M: Month Code L: Location Code DD: Calendar Code

7 TO-252 Embossed Carrier Reel Pack (RP) Specifications Meets all EIA Standards (4.0) Gate 59 Dia (1.5) Cathode 0.63 (16.0) (13.3) * XX DC XX DC XX DC * Cover tape (8.0) Anode (13.0) Arbor Hole Dia (33) Dimensions are in inches (and millimeters) (16.3) Direction of Feed