MC4DCM, MAC4DCN. Thyristors. Surface Mount 600V - 800V > MC4DCM, MAC4DCN. Description

Size: px

Start display at page:

Download "MC4DCM, MAC4DCN. Thyristors. Surface Mount 600V - 800V > MC4DCM, MAC4DCN. Description"

Eunice Walsh
5 years ago
Views:

MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.

1 MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking oltage to 800 On State Current Rating of.0 A RMS at 108C High Immunity to dv/dt 500 /µs at 125C High Immunity to di/dt 6.0 A/ms at 125C Pin Out Epoxy Meets UL in ESD Ratings: Human Body Model, 3B > 8000 Machine Model, C > 00 Pb Free Packages are Available Functional Diagram MT2 G Additional Information Datasheet Resources Samples

2 Maximum Ratings (T J = 25C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive Off-State oltage (Note 1) (Gate Open, Sine Wave 50 to 60 Hz, T J = -0 to 125C) MACDCM MACDCM DRM, RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T C = 108C) I T (RMS).0 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, T C = 125C) I TSM 0 A Circuit Fusing Consideration (t = 8.3 msec) I 2 t 6.6 A²sec Peak Gate Current (Pulse Width 20 µsec, T C = 108C) I GM.0 W Peak Gate Power (Pulse Width 10 µsec, T C = 108C) P GM 2.0 W Average Gate Power (t = 8.3 msec, T C = 108C) P G(A) 1.0 W Operating Junction Temperature Range T J -0 to +125 C Storage Temperature Range T stg -0 to +125 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol alue Unit Thermal Resistance, Junction to Case (AC) R θjc 3.5 Junction to Ambient Junction to Ambient (Note 2) R θja R θja C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (Note 3) T L 260 C 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8" from case for 10 seconds.

3 Electrical Characteristics - OFF (T J = 25C unless otherwise noted ; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current T J = 25C = DRM = RRM ; Gate Open) T J = 110C I DRM, I RRM ma Electrical Characteristics - ON (T J = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak On State oltage (Note ) (I TM = ±6.0 A) TM Gate Trigger Current (Continuous dc) = 12, R L = 100 Ω) MT2(+), G(+) MT2(+), G( ) I GT MT2( ), G( ) ma Holding Current = 12, Gate Open, Initiating Current = ±200 ma) I H ma MT2(+), G(+) Latching Current = 12, I G = 35 ma) I L MT2(+), G( ) MT2( ), G( ) ma Gate Trigger oltage (Continuous dc) = 12, R L = 100 Ω) MT2(+), G(+) MT2(+), G( ) GT MT2( ), G( ) Gate Non Trigger oltage (T J = 125C) = 12, R L = 100 Ω) MT2(+), G(+) MT2(+), G( ) GD MT2( ), G( ) Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.

4 Dynamic Characteristics Characteristic Symbol Min Typ Max Unit RRate of Change of Commutating Current = 00, I TM =.0 A, Commutating dv/dt = 18 /µsec, Gate Open, T J = 125C, f = 250 Hz, C L = 5.0 µf, LL = 20 mh, No Snubber) (See Figure 16) Critical Rate of Rise of Off-State oltage = 0.67 x DRM, Exponential Waveform, Gate Open, T J = 125C) (di/dt)c A/ms d/dt /µs oltage Current Characteristic of SCR Symbol Parameter +C urrent DRM I DRM RRM Peak Repetitive Forward Off State oltage Peak Forward Blocking Current Peak Repetitive Reverse Off State oltage I RRM at RRM on state I H TM Quadrant 1 MainTerminal 2 + I RRM Peak Reverse Blocking Current I H off state + oltage I DRM at DRM TM I H Maximum On State oltage Holding Current Quadrant 3 MainTerminal 2 TM Quadrant Definitions for a Triac MT2 POSITIE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II ( ) I GT GATE (+) I GT GATE Quadrant I REF REF I GT +I GT ( ) MT2 ( ) MT2 Quadrant III ( ) I GT GATE (+) I GT GATE Quadrant I REF REF MT2 NEGATIE (Negative Half Cycle) All polarities are referenced to. With in phase signals (using standard AC lines) quadrants I and III are used.

5 I Thyristors Figure 1. Typical RMS Current Derating Figure 2. On-State Power Dissipation α α α α Figure 3. On State Characteristics Figure. Transient Thermal Response, INSTANTANEOUS ON-STATE CURRENT (AMPS) T T J = 25ϒC J T= 125ϒC J T= 25ϒC T, INSTANTANEOUS ON-STATE OLTAGE (OLTS) r (t), TRANSIENT RESISTANCE (NORMALIZED) Z JC(t) = R JC(t) r(t) t, TIME (ms) 10 k Figure 5. Typical Gate Trigger Current vs, Junction Temperature Figure 6. Typical Gate Trigger oltage vs. Junction Temperature

6 Figure 7. Typical Holding Current vs. Junction Temperature Figure 8. Typical Latching Current vs.junction Temperature Figure 9. Exponential Static dv/dt vs. Gate Resistance, MT2(+) Figure 10. Exponential Static dv/dt vs. Gate Resistance, MT2(-) Figure 11. Exponential Static dv/dt vs. Peak oltage, MT2(+) Figure 9. Exponential Static dv/dt vs. Peak oltage, MT2(-)

7 Figure 13. Typical Exponential Static dv/dt vs.junction Temperature, MT2(+) Figure 13. Typical Exponential Static dv/dt vs.junction Temperature, MT2(-) 10 K STATIC dv/dt (/ s) 8.0 K 6.0 K.0 K 2.0 K PK = 00 GATE OPEN T J, JUNCTION TEMPERATURE (ϒC) 125 Figure 15. Critical Rate of Rise of Commutating oltage Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) L L 1N RMS ADJUST FOR I TM, 60 Hz AC MEASURE I CHARGE TRIGGER CHARGE CONTROL C L TRIGGER CONTROL 1N91 51 MT2 G Note: Component values are for verification of rated (di/dt)c. See AN108 for additional information

8 Dimensions Soldering Footprint DPAK CASE 369C ISSUE O B C T SEATING PLANE S R 12 3 A K E U Z SCALE 3: mm inches F L J H D 2 PL G 0.13 (0.005) M T Dim Inches Millimeters Min Max Min Max A B C D E F G BSC 2.29 BSC H J K R S Z DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, CONTROLLING DIMENSION: INCH. STYLE 6: PIN MT2 3. GATE. MT2

9 Dimensions Part Marking System B DPAK CASE 369C ISSUE O C DPAK CASE 369C STYLE 6 YWW AC DCxG R E S T SEATING PLANE F 12 3 G A K J D 3 PL 0.13 (0.005) M T H Z DPAK 3 CASE 369D STYLE 6 Y= Y ear WW = Work Week ACDCx = Device Code x= M or N G= Pb Free Package YWW AC DCxG Dim Inches Millimeters Min Max Min Max A B C D E F G BSC 2.29 BSC H J K R S Z DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, CONTROLLING DIMENSION: INCH. STYLE 6: PIN MT2 3. GATE. MT2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: Pin Assignment 1 Main Terminal 1 2 Main Terminal 2 3 Gate Main Terminal 2 Ordering Information Device Package Type Package Shipping MACDCM 001 DPAK 3 369D 75 Units / Rail MACDCM 1G DPAK 3 (Pb Free) 369D MACDCMT DPAK 3 369C MACDCMTG DPAK 3 (Pb Free) 369C 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel MACDCN 001 DPAK 3 369D 75 Units / Rail MACDCN 1G DPAK 3 (Pb Free) 369D MACDCNT DPAK 3 369C MACDCNTG DPAK 3 (Pb Free) 369C 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel

BTA16-600BW3G, BTA16-800BW3G,

BTA16-600BW3G, BTA16-800BW3G, BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to