LJxx08xx & QJxx08xHx Series

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Gladys Fleming
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RoHS Description This 8 A High Temperature Alternistor Triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation

Alternistor type components only operate in quadrants I, II, & III and are used in circuits requiring high dv/dt capability.

Surge capability up to 84A at 6Hz half cycle Solid-state switching eliminates arcing or contact bounce that create voltage transients No contacts to wear out from reaction of switching events

1 RoHS Description This 8 A High Temperature Alternistor Triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Sensitive type components guarantee gate control in Quadrants I & IV needed for digital control circuitry. Alternistor type components only operate in quadrants I, II, & III and are used in circuits requiring high dv/dt capability. Main Features Symbol Value Unit I T(RMS) 8 A V DRM /V RRM 4 or 6 V (Q1) 1 to 35 ma Schematic Symbol Features & Benefits RoHS compliant 15 C maximum junction temperature Voltage capability up to 6V Surge capability up to 84A at 6Hz half cycle Solid-state switching eliminates arcing or contact bounce that create voltage transients No contacts to wear out from reaction of switching events Restricted (or limited) RFI generation, depending on activation point of sine wave Requires only a small gate activation pulse in each half-cycle Halogen free and RoHS compliant G Applications Excellent for AC switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are AC solid-state switches, light dimmers, power tools, home/brown goods and white goods appliances. Alternistor Triacs (no snubber required) are used in applications with high inductive loads requiring the highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage.

2 Absolute Maximum Ratings Sensitive Triac (4 Quadrants) Symbol Parameter Value Unit V DSM /V RSM Peak non-repetitive blocking voltage Pw=1 μs 7 V I T(RMS) RMS on-state current (full sine wave) LJxx8Vy/LJxx8Dy T C = 13 C 8 A I TSM Non repetitive surge peak on-state current (full cycle, initial = 25 C) f = 5 Hz t = 2 ms 7 f = 6 Hz t = 16.7 ms 84 I 2 t I 2 t Value for fusing t p = 8.3 ms 29 A 2 s di/dt Critical rate of rise of on-state current I G = 5mA with.1µs rise time f = 6 Hz = 15 C 15 A/μs M Peak gate trigger current t p 1 μs = 15 C.2 A P G(AV) Average gate power dissipation = 15 C.3 W T stg Storage temperature range -4 to 15 C Operating junction temperature range -4 to 15 C Note: xx=voltage/1, y = sensitivity A Absolute Maximum Ratings Alternistor (3 Quadrants) Symbol Parameter Value Unit V DSM /V RSM Peak non-repetitive blocking voltage Pw=1 μs 7 V I T(RMS) RMS on-state current (full sine wave) QJxx8VHy/QJxx8DHy T C = 12 C 8 A I TSM Non repetitive surge peak on-state current (full cycle, initial = 25 C) f = 5 Hz t = 2 ms 7 f = 6 Hz t = 16.7 ms 84 A I 2 t I 2 t Value for fusing t p = 8.3 ms 29 A 2 s di/dt Critical rate of rise of on-state current f = 6 Hz = 15 C 7 A/μs M Peak gate trigger current t P 1 μs; M = 15 C 1.6 A P G(AV) Average gate power dissipation = 15 C = 1mA.4 W T stg Storage temperature range -4 to 15 C Operating junction temperature range -4 to 15 C Note: xx=voltage/1, y = sensitivity Electrical Characteristics ( = 25 C, unless otherwise specified) Sensitive Triac (4 Quadrants) Symbol Test Conditions Quadrant LJxx8x8 Unit V D = 12V R L = 6 Ω I II III IV V GT ALL MAX. 1.3 V V GD V D = V DRM R L = 3.3 kω = 15 C ALL MIN..15 V I H I T = 1mA MAX. 25 ma dv/dt V D = V DRM Gate Open = 15 C MAX V 8 TYP. 6V 5 (dv/dt)c (di/dt)c = 4.3 A/ms = 15 C TYP. 2 V/μs t gt I G = 1mA PW = 15µs I T = 11.3 A(pk) TYP. 12 μs Note: xx=voltage/1, x = package, ma V/μs

3 Electrical Characteristics ( = 25 C, unless otherwise specified) Alternistor Triac (3 Quadrants) Symbol Test Conditions Quadrant QJxx8xH3 QJxx8xH4 Unit I II III MAX ma V D = 12V R L = 6 Ω V GT I II III MAX. 1.3 V V GD V D = V DRM R L = 3.3 kω = 15 C I II III MIN..15 V I H I T = 1mA MAX ma dv/dt V D = V DRM Gate Open TJ = 15 C MIN. 4V V 1 25 V/μs (dv/dt)c (di/dt)c = 4.3 A/ms = 15 C MIN V/μs t gt I G = 1mA PW = 15µs I T = 11.3 A(pk) TYP. 1 1 μs Note: xx=voltage/1, x = package Static Characteristics Symbol Test Conditions Value Unit V TM I TM = 11.3A t p = 38 µs MAX. 1.5 V = 25 C 1 μa I DRM I RRM V DRM = V RRM LJxx8xy = 125 C.5 ma = 15 C 3 MAX. = 25 C 1 μa QJxx8xHy = 125 C.5 = 15 C 3 ma Note: xx=voltage/1, x=package, y = sensitivity Thermal Resistances Symbol Parameter Value Unit R θ(jc) Junction to case (AC) 1.5 C/W R θ(j-a) Junction to ambient 7 C/W Figure 1: Definition of Quadrants Figure 2: Normalized DC Gate Trigger Current for All Quadrants vs. Junction Temperature ALL POLARITIES ARE REFERENCED TO 1.8 POSITIVE (Positive Half Cycle) (-) REF QII QIII QI QIV (+) REF + Ratio of ( = 25 C) (-) (+).4.2 REF NEGATIVE REF (Negative Half Cycle) NOTE: Alternistors will not operate in QIV Note: Alternistors will not operate in QIV Junction Temperature ( )- ºC

4 Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: Normalized DC Gate Trigger Voltage for All Quadrants vs. Junction Temperature I H Ratio of I H ( = 25 C) V GT Ratio of V GT ( = 25 C) Junction Temperature ( )- ºC Junction Temperature ( )- ºC Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum Allowable Case Temperature vs. On-State Current 8 16 Average On-State Power Dissipation (P D(AV) ) - Watts Maximum Allowable Case Temperature (T C ) - C LJxx8Vy/ LJxx8Dy QJxx8VHy/ QJxx8DHy RMS On-State Current (I T(RMS) ) - Amps RMS On-State Current (I T(RMS) ) - Amps Figure 7: On-State Current vs. On-State Voltage (Typical) 2 18 Postitive or Negative Instantaneous On-State Current (i T ) - Amps Postitive or Negative Instantaneous On-State Voltage (v T ) - Volts

5 Temperature Figure 8: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-Repetitive) On-State Current (I TSM ) - Amps 1 1 SUPPLY FREQUENCY: 6 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value Surge Current Duration- Full Cycles Soldering Parameters Reflow Condition Pre Heat Pb Free assembly - Temperature Min (T s(min) ) 15 C - Temperature Max (T s(max) ) 2 C - Time (min to max) (t s ) 6 18 secs Average ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T S(max) to T L - Ramp-up Rate 5 C/second max - Temperature (T L ) (Liquidus) 217 C Reflow - Time (t L ) 6 15 seconds Peak Temperature (T P ) 26 +/-5 C Time within 5 C of actual peak Temperature (t p ) 2 4 seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 28 C Physical Specifications Terminal Finish Body Material Terminal Material Design Considerations 1% Matte Tin-plated UL recognized compound meeting flammability rating V-. Copper Alloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. T P T L T S(max) T S(min) 25 t S Ramp-up Preheat time to peak temperature Environmental Specifications Test AC Blocking (V DRM ) Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend t P t L Ramp-down Time Specifications and Conditions MIL-STD-75, M-14, Cond A Applied Peak AC 15 C for 18 hours MIL-STD-75, M-151, 1 cycles; -55 C to +15 C; 15-min dwell-time EIA / JEDEC, JESD22-A11 18 hours; 16V - DC: 85 C; 85% rel humidity MIL-STD-75, M-131, 18 hours; 15 C 18 hours; -4 C MIL-STD-75 Method 231 ANSI/J-STD-2, category 3, Test A MIL-STD-75, M-236 Cond E

6 Dimensions TO-251AA (V-Package) V-PAK Through Hole E D T C MEASURING POINT H J AREA:.4 IN Inches Millimeters Dimension Min Typ Max Min Typ Max A A B B C D E C P Q R S K F G H I J I G F L K L P Q R S Dimensions TO-252AA (D-Package) D-PAK Surface Mount A B E D T C MEASURING POINT Dimension Inches Millimeters Min Typ Max Min Typ Max A B C I G P Q F O L N AREA:.4 IN 2 M K J H C D E F G H I J K L M N O 5 5 P Q

7 Product Selector Part Number Voltage Gate Sensitivity Quadrants 4V 6V I II III IV Type Package LJxx8D8 x x 1mA 2mA Sensitive Triac TO-252 D-PAK LJxx8V8 x x 1mA 2mA Sensitive Triac TO-251 V-PAK QJxx8DH3 x x 1mA Alternistor Triac TO-252 D-PAK QJxx8VH3 x x 1mA Alternistor Triac TO-251 V-PAK QJxx8DH4 x x 25mA Alternistor Triac TO-252 D-PAK QJxx8VH4 x x 25mA Alternistor Triac TO-251 V-PAK Note: xx=voltage/1, Packing Options Part Number Marking Weight Packing Mode Base Quantity LJxx8D8TP LJxx8D8.3g Tube Pack 75(75 per tube) LJxx8D8RP LJxx8D8.3g Embossed Carrier 25 LJxx8V8TP LJxx8V8.4g Tube Pack 75(75 per tube) QJxx8DH3TP QJxx8DH3.3g Tube Pack 75(75 per tube) QJxx8DH3RP QJxx8DH3.3g Embossed Carrier 25 QJxx8VH3TP QJxx8VH3.4g Tube Pack 75(75 per tube) QJxx8DH4TP QJxx8DH4.3g Tube Pack 75(75 per tube) QJxx8DH4RP QJxx8DH4.3g Embossed Carrier 25 QJxx8VH4TP QJxx8VH4.4g Tube Pack 75(75 per tube) Note: xx=voltage/1 Part Numbering System Part Marking System COMPONENT TYPE LJ : HT Sensitive Triac QJ : HT Triac or Alternistor VOLTAGE RATING 4 : 4V 6 : 6V CURRENT 8: 8A QJ 6 8 V 8 SENSITIVITY & TYPE Sensitive Triac: 8 : 1 ma (QI, II, III) 2 ma (QIV) Alternistor Triac: H3 : 1 ma (QI, II, III) H4 : 35 ma (QI, II, III) PACKAGE TYPE V : TO-251 (VPAK) D : TO-252 (DPAK) LJ68V8 YMLDD Date Code Marking Y:Year Code M: Month Code L: Location Code DD: Calendar Code

8 TO-252 Embossed Carrier Reel Pack (RP) Specifications Meets all EIA Standards.157 (4.) Gate.59 Dia (1.5).63 (16.).524 (13.3) * XXXXXX XX DC XXXXXX XX DC XXXXXX XX DC XXXXXX * Cover tape.315 (8.).512 (13.) Arbor Hole Dia (33.) Dimensions are in inches (and millimeters)..64 (16.3) Direction of Feed Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at

LJxx08xx & QJxx08xHx Series

LJxx08xx & QJxx08xHx Series LJxx8xx & QJxx8xHx Series RoHS Description This 8 A High Temperature Alternistor Triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature