MAC210A8, MAC210A10. Thyristors. Surface Mount 400V - 800V > MAC210A8, MAC210A10. Description

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1 MAC210A8, MAC210A10 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full wave silicon gate controlled solid state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features Blocking Voltage to 600 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Four Modes (Quadrants) Pin Out Pb Free Packages are Available Functional Diagram CASE 221A STYLE 4 MT2 G MT1 1 2 Additional Information Datasheet Resources Samples

2 Maximum Ratings (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage (Note 1) ( 40 to 125 C, Sine Wave, 50 to 60 Hz, Gate Open) MAC210A8 V DRM, V RRM 600 V MAC210A On-State RMS Current (Full Cycle Sine Wave, 50 to 60 Hz, T C = 70 C) I T (RMS) 10 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, T c = +25 C) Preceded and followed by rated current I TSM 100 A Circuit Fusing Consideration (t = 8.3 ms) I 2 t 40 A²sec Peak Gate Power (T C = +80 C, Pulse Width = 1.0 µs) P GM 20 W Average Gate Power (t = 8.3 ms, T C = 80 C) P G (AV) 0.35 W Peak Gate Current (T C = +70 C, Pulse Width = 10 s) I GM A Operating Junction Temperature Range T J -40 to +125 C Storage Temperature Range T stg -40 to +150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case (AC) Junction to Ambient R 8JC R 8JA 62.5 C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T L 260 C

3 Electrical Characteristics - OFF (T J = 25 C unless otherwise noted ; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current = V DRM = V RRM ; Gate Open) T J = 25 C I DRM, μa I RRM T J = 125 C - - ma Electrical Characteristics - ON (T J = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak On State Voltage (TM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%) MT2(+), G(+) 1.6 V Gate Trigger Current (Continuous dc) = 12 V, R L = 100 Ohms) MT2(+), G( ) I GT MT2( ), G( ) MT2( ), G(+) ma MT2(+), G(+) 0.9 Gate Trigger Voltage (Continuous dc) = 12 V, R L = 100 Ω) MT2(+), G( ) 0.9 V GT MT2( ), G( ) 1.1 MT2( ), G(+) V Holding Current = 12 V dc, Gate Open, Initiating Current = ±150 ma)) I H ma Turn-On Time (Rated V DRM, I TM = 14 A) (I GT = 120 ma, Rise Time = 0.1 s, Pulse Width = 2 s) t gt 1.5 μs Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Commutation Voltage = Rated V DRM, I TM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70 C) (di/dt)c 5.0 A/ms Critical Rate of Rise of Off-State Voltage = Rated V DRM, Exponential Waveform, Gate Open, T C = +70 C) dv/dt 100 V/µs

4 Voltage Current Characteristic of SCR Symbol Parameter +C urrent V DRM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + I DRM Peak Forward Blocking Current I RRM at V RRM on state I H V RRM I RRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Quadrant 3 I H off state +V oltage I DRM at V DRM I H Holding Current Quadrant Definitions for a Triac Quadrant II Quadrant I I Quadrant III Quadrant IV All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used.

5 Figure 1. Current Derating Figure 2. Power Dissipation Figure 3. Maximum On State Characteristics Figure 4. Maximum Non Repetitive Surge Current Figure 5. Typical Gate Trigger Voltage V GT, GATE TRIGGER VOLTAGE (NORMALIZED) OFF-STATE VOLTAGE = 12 Vdc ALL MODES T C, CASE TEMPERATURE (ϒC) 60 80

6 Figure 6. Typical Gate Trigger Current Figure 7. Typical Holding Current I GT, GATE TRIGGER CURRENT (NORMALIZED) OFF-STATE VOLTAGE = 12 Vdc ALL MODES T C, CASE TEMPERATURE (ϒC) I H, HOLDING CURRENT (NORMALIZED) OFF-STATE VOLTAGE = 12 Vdc ALL MODES T C, CASE TEMPERATURE (ϒC) 60 80

7 Dimensions Part Marking System SEATING PLANE B F T C S Q 4 A MAC210AxG AYWW H Z 12 3 K U STYLE 4 L V G N D R J x= 8 or 10 A= Assembly Location Y= Year WW = Work Week Pin Assignment Dim Inches Millimeters Min Max Min Max A B C D F G H J K L N Q R S T U V Z Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 Ordering Information Device Package Shipping MAC210A8 MAC210A8G MAC210A10 MAC210A10G (Pb-Free) (Pb-Free) 500 Units/ Box 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:

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