Triacs. ( Amps) Features
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1 Selected Packages* U.L. RECOGNIZED File #E71639 THERMOTAB TO-22AB TO - 92 TO-22AB G Triacs (.8 25 ) 2 General Description These gated triacs from Teccor Electronics are part of a broad line of bidirectional semiconductors. The devices range in current ratings from.8 to 25 amperes and in voltages from 2 to 8 volts. The triac may be gate triggered from a blocking to conduction state for either polarity of applied voltage and is designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls and static switching relays. The triggering signal is normally applied between the gate and. Teccor's gated triacs are available in a choice of different packages as shown above. Isolated packages are offered with internal construction, having the case or mounting tab electrically isolated from the semiconductor chip. This feature facilitates the use of low-cost assembly and convenient packaging techniques. Tape-and-reel capability is available. See Packing Options section of this catalog. All Teccor triacs have glass-passivated junctions to ensure long term device reliability and parameter stability. Teccor's glass offers a rugged, reliable barrier against junction contamination. Variations of devices covered in this data sheet are available for custom design applications. Please consult factory for more information. Features Electrically-isolated packages Glass-passivated junctions Voltage capability up to 8 Volts Surge capability up to 2 Teccor Electronics, Inc. 2-1 Triacs (972)
2 Electrical Specifications I T(RMS) RMS On-State Conduction Angle of 36 (4) MAX.8 Amp 1. Amp G TO-92 Part Number Isolated Non-Isolated G G G THERMOTAB TO-22AB TO-22AB TO-22AB V DRM I GT I DRM V TM V GT Repetitive Peak Blocking Voltage (1) Volts DC Gate Trigger in Specific Operating Quadrants V D = 12VDC R L = 6Ω (3) (7) m QI QII QIII QIV QIV 25 C Peak Off-State Gate Open V DRM = Max Rated Value (1) (16) m 1 C 125 C Peak On-State Voltage at Max Rated RMS 25 C (1) (5) Volts DC Gate Trigger Voltage V D = 12VDC R L = 6Ω (2) (6) (18) See Package Dimensions section for variations. MIN MAX TYP MAX MAX MIN MAX Q2X8E Q4X8E Q5X8E Q6X8E Q2X8E Q4X8E Q5X8E Q6X8E Q21E Q41E Q51E Q61E Q21E Q41E Q51E Q61E Q24L3 Q24F Q44L3 Q44F Q54L3 Q54F Q64L3 Q64F Q24L4 Q24F Q44L4 Q44F Q54L4 Q54F Q64L4 Q64F Q74L Q84L Q26L4 Q26F41 Q26R Q46L4 Q46F41 Q46R Q56L4 Q56F41 Q56R Q66L5 Q66F51 Q66R Q76L5 Q76R Q86L5 Q86R Q28L4 Q28F41 Q28R Q48L4 Q48F41 Q48R Q58L4 Q58F41 Q58R Q68L5 Q68F51 Q68R Q78L5 Q78R Q88L5 Q88R C Volts 25 C See General Notes and Electrical Specification Notes on page 2-4. Triacs 2-2 Teccor Electronics, Inc. (972)
3 Triacs I H I GTM P GM P G(AV) I TSM dv/dt (c) dv/dt t gt I 2 t di/dt Holding (DC) Gate Open (1) (8) (12) m Peak Gate Trigger (14) Peak Gate Average Power Dissipation Dissipation Gate Power (14) I GT I GTM Peak One Cycle Surge (9) (13) Critical Rate-of-Rise of Commutation Voltage at Rated V DRM and I T(RMS) Commutating di/dt =.54 Rated I T(RMS) /ms Gate Unenergized (1) (4) (13) Volts/µSec Critical Rate-of- Rise of Off-State Voltage at Rated V DRM Gate Open (1) Volts/µSec 1 C 125 C Gate Controlled Turn-On Time I GT = 2mA.1µs Rise Time (1) µsec RMS Surge (Non- Repetitive) On-State for Period of 8.3ms for Fusing Maximum Rate-of- Change of On-State I GT = 2mA with.1µs Rise Time MAX Watts Watts 6Hz 5Hz TYP MIN TYP Amp 2 Sec /µsec See General Notes and Electrical Specification Notes on page 2-4. Teccor Electronics, Inc. 2-3 Triacs (972)
4 Electrical Specifications I T(RMS) RMS On-State Conduction Angle of 36 (4) (16) Isolated G Part Number Non-Isolated G G V DRM I GT I DRM V GT Repetitive Peak Blocking Voltage (1) DC Gate Trigger In Specific Operating Quadrants V D = 12VDC (3) (7) (15) m Peak Off-State Gate Open V DRM = Max Rated Value (1) (16) m DC Gate Trigger Voltage V D = 12VDC (2) (6) (15) (18) THERMOTAB TO-22AB TO-22AB TO-22AB Volts QI QII QIII QIV QIV 25 C 1 C 125 C 125 C 25 C MAX See Package Dimensions section for variations. MIN MAX TYP MAX MIN MAX Q21L5 Q21F51 Q21R Q41L5 Q41F51 Q41R Q51L5 Q51F51 Q51R Q61L5 Q61F51 Q61R Q71L5 Q71R Q81L5 Q81R Q215L5 Q215R Q415L5 Q415R Q515L5 Q515R Q615L5 Q615R Q715L5 Q715R Q815L5 Q815R Q225R Q425R Q525R Q625R Q725R Q825R Volts General Notes All measurements are made at 6 Hz with a resistive load at an ambient temperature of +25 C unless specified otherwise. Operating temperature range (T J ) is -65 C to +125 C for TO-92, and -4 C to +125 C for all other devices Storage temperature range (T S ) is -65 C to +15 C for TO-92, and -4 C to +15 C for TO-22 devices, and -4 C to +125 C for all other devices. Lead solder temperature is a maximum of 23 C for 1 seconds, maximum; 1/16" (1.59mm) from case The case temperature (T C ) is measured as shown on the dimensional outline drawings. See Package Dimensions section of this catalog. Electrical Specification Notes (1) For either polarity of with reference to terminal. (2) For either polarity of gate voltage (V GT ) with reference to terminal. (3) See Definition of Quadrants. (4) See Figures 2.1 through 2.7 for current rating at specific operating temperature. (5) See Figures 2.8 through 2.1 for i T vs v T. (6) See Figure 2.12 for V GT vs T C. (7) See Figure 2.11 for I GT vs T C. (8) See Figure 2.14 for I H vs T C. (9) See Figure 2.13 for surge rating with specific durations. (1) See Figure 2.15 for t gt vs I GT. (11) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number. (12) Initial on-state current = 2mA(DC) for.8-1 amp devices, 4 ma(dc) for 15 amp to 25 amp devices. (13) See Figures 2.1 through 2.6 for maximum allowable case temperature at maximum rated current. (14) Pulse width 1µs. (15) R L = 6Ω for.8-1 amp triacs; R L = 3Ω for amp triacs. (16) T J for test conditions in off-state. (17) I GT =5 ma for 25 amp devices. (18) Quadrants I, II, and III only. Triacs 2-4 Teccor Electronics, Inc. (972)
5 Triacs V TM I H I GTM P GM P G(AV) I TSM dv/dt(c) dv/dt tgt I 2 t di/dt Peak On- State Voltage at Maximum Rated RMS 25 C (1) (5) Holding (DC) Gate Open (1) (8) (12) Peak Gate Trigger (14) Peak Gate Power Dissipation (14) I GT I GTM Average Gate Power Dissipation Peak One-Cycle Surge (9) (13) Critical Rate-of-Rise of Commutation Voltage at Rated V DRM & I T(RMS) Commutating di/dt =.54 Rated I T(RMS) /ms Gate Unenergized (1) (4) (13) Critical Rate-of- Rise of Off-State Voltage at Rated V DRM Gate Open (1) Volts/µSec Gate Controlled Turn-On Time I GT = 2mA.1µs Rise Time (1) (17) RMS Surge (Non- Repetitive) On- State for Period of 8.3ms For Fusing Maximum Rate-of- Change of On-State I GT = 2mA with.1µs Rise Time Volts m Watts Watts 6Hz 5Hz Volts/µSec 1 C 125 C µsec 2 Sec /µsec MAX MAX TYP MIN TYP Teccor Electronics, Inc. 2-5 Triacs (972)
6 Electrical Specifications Gate Characteristics Teccor triacs may be turned on between gate and terminals in the following ways: With in-phase signals (using standard AC line) Quadrants I and III are used. By applying unipolar pulses (gate always positive or negative) with negative gate pulses Quadrants II and III are used and with positive gate pulses Quadrants I and IV are used. However, due to higher gate requirements for Quadrant IV, it is recommended that only negative pulses be applied. If positive pulses are required, see sensitive triac sections of catalog or contact factory. In all cases, if maximum surge capability is required, pulses should be a minimum of one magnitude above I GT rating with a steep rising waveform ( 1 µsec rise time). Electrical Isolation Teccor s isolated triac packages will withstand a minimum high potential test of 25VAC (RMS) from leads to mounting tab, over the operating temperature range of the device. See isolation table below for standard and optional isolation ratings. ELECTRICAL ISOLATION FROM LEADS TO MOUNTING TAB Isolated ** VAC (RMS) TO-22AB 25 Standard 4 Optional * * For 4V isolation, use V suffix in part number. ** UL Recognized File E71639 POSITIVE + (-) I GT GATE (+) I GT GATE I GT - REF REF + I GT (-) I GT GATE (+) I GT GATE REF - NEGATIVE REF Definition of Quadrants THERMAL RESISTANCE (STEADY STATE) R θ JC [R θ JA ] (TYP.) C/W Type TO-92 TYPE 1 TO-22AB TYPE 2 TO-22AB THERMOTAB TO-22AB NON-ISOLATED TO-22AB.8 Amp 6 [135] 1. Amp 5 [95] [45] 6 [7] 3.6 [5] [45] Triacs 2-6 Teccor Electronics, Inc. (972)
7 Triacs AMP TO-92 CONDUCTION ANGLE: 36 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 1 AMP TO RMS On-State [l T(RMS) ] - AMPS AMP TO-22 CONDUCTION ANGLE: 36 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 1 AMP TO-22 (NON-ISOLATED) RMS On-State [l T(RMS) ] - AMPS Figure 2.1 (.8 and 1. Amp) Figure 2.4 (1 Amp) AMP TO-22 (TYPE 2 & 4) 6 AMP TO-22 (NON-ISOLATED) 4 AMP TO -22 (ISOLATED) 4 AMP TO-22 (TYPE 1 & 3) CONDUCTION ANGLE: 36 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 6 AMP TO-22 (ISOLATED) & 6 AMP TO RMS On-State [l T(RMS) ] - AMPS AMP TO-22 (ISOLATED) CONDUCTION ANGLE: 36 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 15 AMP TO-22 (NON-ISOLATED) RMS On-State [l T(RMS) ] - AMPS Figure 2.2 (4 and 6 Amp) Figure 2.5 (15 Amp) AMP TO-22 (NON- ISOLATED) 8 AMP TO-22 (ISOLATED) 8 AMP TO-22 CONDUCTION ANGLE: 36 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 1 AMP TO-22 (ISOLATED) RMS On-State [l T(RMS) ] - AMPS AMP TO-22 (NON-ISOLATED) CONDUCTION ANGLE: 36 CASE TEMPERATURE: Measured as shown on Dimensional Drawing RMS On-State [l T(RMS) ] - AMPS Figure 2.3 (8 and 1 Amp) Figure 2.6 (25 Amp) Teccor Electronics, Inc. 2-7 Triacs (972)
8 Electrical Specifications 12 Maximum Allowable Ambient Temperature (TA) C AMP TO-92 CONDUCTION ANGLE: 36 FREE AIR RATING NO HEATSINK TO-22 (TYPE 2 & 4) TO-22 DEVICES & TO-22 (TYPE 1 & 3).8 AMP TO Positive or Negative Instantaneous On-State (i T ) C 15 & 25 AMP TO RMS On-State [I T (RMS) ] Positive or Negative Instantaneous On-State Voltage (v T ) - Volts Figure 2.7 Maximum Allowable Ambient Temperature vs On-State Figure 2.1 On-State vs On-State Voltage (Typical) (15 and 25 Amp) Positive or Negative Instantaneous On-State (i T ) C 1. AMP DEVICES.8 AMP DEVICES Positive or Negative Instantaneous On-State Voltage (v T ) - Volts I GT I GT (25 C) Ratio of Case Temperature (T C ) - C Figure 2.8 On-State vs On-State Voltage (Typical) (.8 and 1. Amp) Figure 2.11 Normalized DC Gate Trigger for All Quadrants vs Case Temperature Positive or Negative Instantaneous On-State (i T ) C 6-1 AMP DEVICES 4 AMP DEVICES Positive or Negative Instantaneous On-State Voltage (v T ) - Volts V GT V GT (25 C) Ratio of Case Temperature (T C ) - C Figure 2.9 On-State vs On-State Voltage (Typical) (4, 6, 8, and 1 Amp) Figure 2.12 Normalized DC Gate Trigger Voltage for All Quadrants vs Case Temperature Triacs 2-8 Teccor Electronics, Inc. (972)
9 Triacs Peak Surge (Non-Repetitive) On-State (l TSM ) SUPPLY FREQUENCY: 6 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [lt(rms)]: Maximum Rated Value at Specified Case Temperature NOTES: 1) GATE CONTROL MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT INTERVAL. 2) OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE. 25 AMP TO AMP DEVICES 1 AMP DEVICES 8 AMP DEVICES 6 AMP DEVICES 4 AMP DEVICES 1 AMP DEVICES.8 AMP DEVICES Surge Duration - full cycles Figure 2.13 Peak Surge vs Surge Duration 4. 8 I H I H (25 C) Ratio of INITIAL ON-STATE CURRENT = 2 ma (DC) 1-1 AMP DEVICES = 4 ma (DC) AMP DEVICES Typical Turn-On Time (tgt) - µsec DEVICES WITH lgt=1ma DEVICES WITH lgt=25ma DEVICES WITH lgt=5ma 25 C Case Temperature (T C ) - C DC Gate Trigger (l GT ) - ma Figure 2.14 Normalized DC Holding vs Case Temperature Figure 2.15 Turn-On Time vs Gate Trigger (Typical) Teccor Electronics, Inc. 2-9 Triacs (972)
10 Electrical Specifications Average On-State Power Dissipation [P D(AV) ] - Watts CONDUCTION ANGLE: 36.8 AMP DEVICES 1. AMP DEVICES Average On-State Power Dissipation [P D(AV) ] - Watts CONDUCTION ANGLE: AMP DEVICES RMS On-State [I T(RMS) ] - RMS On-State [I T(RMS) ] - Figure 2.16 Power Dissipation (Typical) vs On-State (.8 and 1. Amp) Figure 2.19 Power Dissipation (Typical) vs RMS On-State (4 Amp) Average On-State Power Dissipation [P D(AV) ] - Watts AMP TO-22 & TO AMP TO-22 CONDUCTION ANGLE: RMS On-State [l T(RMS) ] - AMPS Figure 2.17 Power Dissipation (Typical) vs On-State (6-1 and 15 Amp) Average On-State Power Dissipation [P D(AV) ] - Watts AMP TO-22 CONDUCTION ANGLE: RMS On-State [l T(RMS) ] - AMPS Figure 2.18 Power Dissipation (Typical) vs On-State (25 Amp) Triacs 2-1 Teccor Electronics, Inc. (972)
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More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. * Selected Packages U.L. RECONIZED File #E71639 E4 *TO-22 *TO-218X *TO-218
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Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon
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Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
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MCR12DG, MCR12MG, MCR12NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
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MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
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Triac 600V, 25A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static
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MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
More informationFeatures. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J
Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated
More information2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
More informationBTA30H-600CW3G, BTA30H-800CW3G
BTA30H-600CW3G, BTA30H-800CW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
More informationBTB08-600BW3G, BTB08-800BW3G
BTB08-600BW3G, BTB08-800BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
More informationSCT04N60FD 600V, 4A STANDARD TRIAC. Features. Applications. Ordering Information. Absolute Maximum Ratings (Limiting Values)
Triac 600V, 4A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static
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Copyright 997, Power Innovations Limited, UK JULY 975 - REVISED MARCH 997 Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max I GT of 5 ma (Quadrant ) MT
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Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
More informationMCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
More informationMCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
More informationKxxxzy SIDAC. Teccor brand Thyristors Standard Bidirectional SIDACs. Description
Kxxxzy SIDAC Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance
More informationTeccor brand Thyristors High Energy Bidirectional SIDACs
Kxxx0yH Series RoHS Description The new Kxxx0yH is a higher energy SIDAC switch for gas ignition applications requiring higher current pulse current especially at low repetition rate. It is offered in
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Overvoltage protected AC switch Datasheet production data Features AC switch with self over voltage protection Microcontroller direct driven (low gate current max. 10 ma) Three quadrants (Q1, Q2 and Q3)
More informationBTA10, BTB10 T1035, T1050 Datasheet
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MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
More informationSilicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to
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MCR8SDG, MCR8SMG, MCR8SNG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
More informationSymbol Parameter Value Unit. Repetitive F = 50 Hz. Non Repetitive. Storage and operating junction temperature range - 40 to to + 125
STANDARD TRIACS FEATURES HIGH SURGE CURRENT CAPABILITY. COMMUTATION : (dv/dt)c > 10V/µs BTA Family : INSULATING VOLTAGE = 2500V (RMS) (UL RECOGNIZED : E81734) A 2 G A1 DESCRIPTION The BTA25 A/B triac family
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Glass passivated triac in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability
More informationBTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
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More informationUNISONIC TECHNOLOGIES CO., LTD
UT6FF/FG UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Glass passivated triac in a full pack plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage
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Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever
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Triac 600V, 4 STNDRD TRIC This device is suitable for low power C switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching
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MAC5 Series Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as solidstate relays, motor controls, heating controls and power supplies; or wherever
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