Features. Applications. This device is phase control : V DRM =600V. Marking Diagram SCT04N60D TO-252 SCT04N600. Triac TO-252. Rating.
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1 Triac 600V, 4 STNDRD TRIC This device is suitable for low power C switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. Features Repetitive Peak Off-State Voltage : V DRM =600V R.M.S On-State Current : I T(RMS) =4 High Commutation: (di/dt) C =3.7 / ms (Min) 4 2, 4 1: T1 2, 4: T : Gate 3 1 TO-252 Product Characteristics Symbol Rating I T(RMS) V DRM 4 600V pplications Switching mode power supply, light dimmet TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool Marking Diagram SCT 04N60 YWW Ordering Information Device Marking Code SCT04N600 Package TO-252 Column 1, 2 : Device Code Column 3: Year & Week Code bsolute Maximum Ratings (Limiting Values) Characteristicc Symbol Value Unit Repetitive Peak Off-state Voltage V DRM 600 V RMS on-state current (full sine wave) I T(RMS) 4 Non- repetitive surge peak on-state current (full cycle, Tj initial = 25 ) I TSM 38 I 2 t Value for fusing I 2 t 6 2 s Peak gate current I GM 4 Peak gate power dissipation P GM 5 W verage gate peak dissipation P G(V) 0.5 W Storage temperature range T stg -40 to +150 Operating junction temperature range T j -40 to +125 KSD-S6O
2 Thermal Characteristics Characteristic Symbol Value Unit Maximum thermal resistance junction to case (C) R th(j-c) 3.2 /W Maximum thermal resistance junction to ambient (C) R th(j-a) 70 /W Electrical Characteristics (TJ=25, unless otherwise specified) Off Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Repetitive peak Off-state current I DRM V D = V DRM u Repetitive peak reverse current I RRM V R = V RRM μ On Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak On-state voltage V TM I T = V Holding current I H V D = 12V, I T = m Gate trigger current I GT (Ⅰ-Ⅱ-Ⅲ) V D = 12V, R L = 30Ω m I GT (Ⅳ) m Gate trigger voltage V GT (Ⅰ-Ⅱ-Ⅲ) V D = 12V, R L = 30Ω V Gate Non-trigger voltage V GD V D = 2/3 V DRM, T j = V Dynamic Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Critical rate of rise of Off-state Voltage Rate of Change of Commutation Current Critical rate of rise of on-state current (dv/dt) S V D = 2/3 V DRM, T j = V/ μs (di/dt) C di/dt (dv/dt) C =10V/ μs, T j =125 f=120hz, I G = 2 I GT t r 100 ns, T j = / ms / μs Simple circuit for (dv/dt) S Simple circuit for (di/dt) C vs (dv/dt) C Simple circuit for di/dt KSD-S6O
3 Electrical Characteristic Curves Fig. 1 P I T(RMS) Fig. 2 I T(RMS) T C W Fig. 3 I T - V T Fig. 4 (di/dt) C - (dv/dt) C ms μs Fig. 5 I GT- T j Fig. 6 I T - I GT m m m KSD-S6O
4 Electrical Characteristic Curves Fig. 7 V GT- T j Fig. 8 I T - V GT m Fig. 9 I H- V T m KSD-S6O
5 Outline Dimension Recommend PCB solder land [Unit: mm] KSD-S6O
6 The UK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these UK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). UK Corp. cannot accept liability to any damage which may occur in case these UK Corp. products were used in the mentioned equipments without prior consultation with UK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-S6O
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