Features / Advantages: Applications: Package: TO-240AA

Transcription

1 MCM4P6 hyristor Module RRM 2x Phase leg Part number MCM4P6 Backside: isolated Features / dvantages: pplications: Package: O-24 hyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded l2o3-ceramic Line rectifying 5/6 Hz Softstart C motor control DC Motor control Power converter C power control Lighting and temperature control solation oltage: 48 ~ ndustry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight dvanced power cycling

2 MCM4P6 hyristor Symbol Definition 6 25 C J 4 C Ratings min. typ. max. 7 forward voltage drop 5 25 C.29 (RMS) Conditions C 85 C 8 sine 25 C J 25 C J threshold voltage J 4 C.85 for power loss calculation only r slope resistance 2.8 mω R thermal resistance junction to case.22 K/ thjc P tot total power dissipation C 25 C 52 SM max. forward surge current t ms; (5 Hz), sine J 45 C 2.4 k t 8,3 ms; (6 Hz), sine R 2.59 k t ms; (5 Hz), sine J 4 C 2.4 k t 8,3 ms; (6 Hz), sine R 2.2 k ²t value for fusing t ms; (5 Hz), sine J 45 C 28.8 k²s t 8,3 ms; (6 Hz), sine R 27.9 k²s t ms; (5 Hz), sine J 4 C 2.8 k²s t 8,3 ms; (6 Hz), sine 2.2 k²s P GM RSM/DSM RRM/DRM P G average forward current RMS forward current J J 25 C C J junction capacitance 4 f MHz 25 C 9 max. gate power dissipation t P 3 µs C 4 C t 3 µs 5 average gate power dissipation P J J 4 C R Unit R J pf (di/dt) cr critical rate of rise of current J 4 C; f 5 Hz repetitive, 45 t P 2 µs; di G /dt.45/µs; G.45; D ⅔ DRM non-repet., 5 (dv/dt) critical rate of rise of voltage ⅔ 4 C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current 6 R R thch thermal resistance case to heatsink.2 K/ D GK ; method (linear voltage rise) G gate trigger voltage D 6 J 25 C J -4 C DRM J 5 5 µ m /µs /µs /µs.5.6 G gate trigger current D 6 J 25 C 5 m J -4 C 2 m GD gate non-trigger voltage D ⅔ DRM J 4 C.2 GD gate non-trigger current m L latching current t p µs J 25 C 2 m G.45; di G /dt.45/µs H holding current D 6 R GK J 25 C 2 m t gd gate controlled delay time D ½ DRM J 25 C 2 µs G.45; di G /dt.45/µs t q turn-off time R ; 5 ; D ⅔ DRM J 4 C 85 µs di/dt /µs; dv/dt 2/µs; t p 2 µs

3 MCM4P6 Package O-24 Ratings Symbol Definition Conditions min. typ. max. Unit RMS RMS current per terminal 2 J virtual junction temperature -4 4 C op operation temperature C stg storage temperature C eight M D M d Spp/pp d Spb/pb SOL mounting torque 2.5 terminal torque 2.5 creepage distance on surface striking distance through air isolation voltage t second t minute terminal to terminal terminal to backside 5/6 Hz, RMS; SOL m g Nm Nm mm mm Part description M C M 4 P 6 Module hyristor (SCR) hyristor (up to 8) Current Rating Phase leg Reverse oltage [] O-24-B Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. MCM4P6 MCM4P6 Box Similar Part Package oltage class MCM4P8 O-24-B 8 Equivalent Circuits for Simulation * on die level J 4 C hyristor R max threshold voltage.85 R max slope resistance *.6 mω

4 MCM4P6 Outlines O

5 MCM4P6 hyristor Hz, 8% RRM 5 R J 25 C 4 C 6 SM 2 J 4 C J 45 C 2 t 4 [ 2 s] J 45 C J 4 C 5 J 25 C [] Fig. Forward characteristics 8.. t [s] Fig. 2 Surge overload current SM : crest value, t: duration t [ms] Fig. 3 2 t versus time (- s). 2 G [] t p 3 µs t p 5µs P GM 2 6 P G 8 25 C 25 C GD G ( J -4 C) G ( J C) G ( J 25 C)... G Fig. 4 Gate voltage & gate current t gd. [μs]. J 25 C lim. typ G Fig. 5 Gate controlled delay time t gd 6 2 M 8 4 dc case [ C] Fig. 6 Max. forward current at case temperature P tot 2 5 [] 5 dc () R thh amb [ C] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature.2.6 Z thjc.2 [K/].8 i R thi (K/) t i (s) t [ms] Fig. 8 ransient thermal impedance junction to case