IGBT Module Sixpack MWI 15-12A7. I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.0 V. Short Circuit SOA Capability Square RBSOA
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1 MWI IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 30 CES = 1200 CE(sat) typ. = 2.0 Part name (Marking on product) MWI E72873 Pin confi guration see outlines Features: NPT IGBT technology low saturation voltage positive temperature coeffi cient for easy paralleling low switching losses switching frequency up to 30 khz square RBSO, no latch up high short circuit capability MOS input, voltage controlled ultra fast free wheeling diodes solderable pi for PCB mounting space savings reduced protection circuits pplication: C motor control C servo and robot drives power supplies Package: UL registered Industry standard E2pack package with copper base plate package designed for wave soldering 201 IXYS ll rights reserved 1
2 MWI IGBTs Symbol Definitio Conditio min. typ. max. Unit CES collector emitter voltage T J = 25 C to 150 C 1200 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient I C25 collector current T C = 25 C I C80 T C = 80 C P tot total power dissipation T C = 25 C 140 W CE(sat) collector emitter saturation voltage I C = 15 ; GE = 15 T J = 25 C T J = 125 C ±20 ± GE(th) gate emitter threshold voltage I C = 0. m; GE = CE T J = 25 C I CES collector emitter leakage current CE = CES ; GE = 0 T J = 25 C T J = 125 C m m I GES gate emitter leakage current CE = 0 ; GE = ± n C ies input capacitance CE = 25 ; GE = 0 ; f = 1 MHz 1000 pf Q G(on) total gate charge CE = 00 ; GE = 15 ; I C = nc t d(on) t r t d(off) t f E on E off turnon delay time current rise time turnoff delay time current fall time turnon energy per pulse turnoff energy per pulse inductive load T J = 125 C CE = 00 ; I C = 15 GE = ±15 ; R G = 82 W I CM reverse bias safe operating area RBSO; GE = ±15 ; R G = 82 W L = 100 µh; clamped induct. load T J = 125 C CEmax = CES L S di/dt 35 t SC short circuit safe operating area CE = CES ; GE = ±15 ; T J = 125 C 10 µs (SCSO) R G = 82 W; nonrepetitive R thjc thermal resistance junction to case (per IGBT) 0.88 K/W mj mj Diodes Symbol Definitio Conditio min. typ. max. Unit RRM max. repetitve reverse voltage T J = 150 C 1200 I F25 I F80 forward current T C = 25 C T C = 80 C F forward voltage I F = 15 ; GE = 0 T J = 25 C T J = 125 C I RM t rr E rec(off) max. reverse recovery current reverse recovery time reverse recovery energy R = 00 di F /dt = 400 /µs T J = 125 C I F = 15 ; GE = mj R thjc thermal resistance junction to case (per diode) 2.1 K/W T C = 25 C unless otherwise stated 201 IXYS ll rights reserved 2
3 MWI Module Symbol Definitio Conditio min. typ. max. Unit T J T JM T stg operating temperature max. virtual junction temperature storage temperature C C C ISOL isolation voltage I ISOL < 1 m; 50/0 Hz 2500 ~ M d mounting torque (M4) Nm d S d creep distance on surface strike distance through air Weight 180 g R thch thermal resistance case to heatsink with heatsink compound 0.02 K/W mm mm Equivalent Circuits for Simulation I 0 R 0 Symbol Definitio Conditio min. typ. max. Unit 0 R 0 0 R 0 R 1 R 2 C 1 C 2 IGBT Diode R1 R2 R3 R4 C1 C2 C3 C4 T1 T T J = 125 C D1 D T J = 125 C n t Zth( t) = R i 1 exp τ i i = 1 τ i = R i C i IGBT Diode mw mw 201 IXYS ll rights reserved 3
4 MWI Outline Drawing Dimeio in mm (1 mm = ) 0.8 ± ±1 1.2 ±0.05 Ø ± ±0.05 Ø Ø 2.5 Ø 2.1 Ø 0.4 B Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MWI MWI15127 Box IXYS ll rights reserved 4
5 MWI Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. trafer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. Typ. turn off characteristics of free wheeling diode 201 IXYS ll rights reserved 5
6 MWI Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. traient thermal impedance 201 IXYS ll rights reserved
IGBT Module Sixpack MWI 25-12A7(T) I C25 = 50 A V CES = 1200 V V CE(sat) typ. = 2.2 V. Short Circuit SOA Capability Square RBSOA
MWI 25127(T) IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 50 CES = 1200 CE(sat) typ. = 2.2 Part name (Marking on product) MWI25127 MWI25127T 13 T version 1 5 9 T 2 10 1 15 14 E72873
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IGBT XPT Module H Bridge Preliminary data CES = 12 25 = 85 CE(sat) = 1.8 Part name (Marking on product) MIX 61H12ED 13 1 T1 D1 9 T5 D5 2 1 16 E72873 14 3 T2 D2 11 T6 D6 4 12 17 Features: Easy paralleling
IGBT Module H Bridge MIEB 101H1200EH. = 1200 V = 183 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIEB101H1200EH
MIEB 11HEH IGBT Module H Bridge S 25 = = 183 (sat) = 1.8 Part name (Marking on product) MIEB11HEH 13, 21 1 T1 D1 9 T2 D2 2 1 19 E72873 3 T3 D3 11 T D 1, 2 Features: SPT + IGBT technology low saturation
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= 25 C = 110 C = 150 C. Watts T J = 0V, I C. = 1mA, T j = 25 C) = 25 C) = 35A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)
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Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 7 A VS-GB75LA6UF FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 5 khz Square RBSOA SOT-227
Features / Advantages: Applications: Package: TO-240AA
MCMP6 hyristor Module RRM 2x 6.2 Phase leg Part number MCMP6 Backside: isolated 3 2 6 7 5 4 Features / dvantages: pplications: Package: O-24 hyristor for line frequency Planar passivated chip Long-term
IXBX25N250 = 2500V = 25A 3.3V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor. Symbol Test Conditions Maximum Ratings
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBX25N25 V CES 9 = 25V = 25A V CE(sat) 3.3V Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25 V V CGR = 25 C to 15 C,
Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
6V 6A Module MG66WB-BN4MM RoHS Features High short circuit capability, self limiting short circuit current (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling
QID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection
SUSPM TM DEC LVH200G1201_Preliminary LVH200G1201Z*_Preliminary. SUSPM X 48.5 X 30 mm. 1200V 200A 2-Pack IGBT Module. Features.
DEC 211 LVH2G121_Preliminary LVH2G121Z*_Preliminary SUSPM TM 12V 2A 2-Pack IGBT Module Features Soft Punch Through IGBT(SPT+ IGBT) - Low saturation voltage - Positive temperature coefficient - Fast Switching
Insulated Gate Bipolar Transistor (Trench IGBT), 140 A
Insulated Gate Bipolar Transistor (Trench IGBT), 4 A VS-GT4DA6U PRODUCT SUMMARY SOT-7 V CES 6 V I C DC 4 A at 9 C () V CE(on) typical at A, 5 C.7 V I F DC 7 A at 9 C Speed 8 khz to 3 khz Package SOT-7
MPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS
General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MG3QYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module 3 Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN
MGQYSA Powerex, Inc., E. Hillis Street, Youngwood, Pennsylvania 1597-1 (7) 95-77 Compact IGBT Series Module Amperes/1 Volts J A D K L M N W V E C1 C DETAIL "A" H B F E CE1 U W Outline Drawing and Circuit
Symbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V
STARPOWER SEMICONDUCTOR TM IGBT Preliminary Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
Sonic Fast Recovery Diode
DH2x6-18A Sonic Fast Recovery Diode RRM = 18 I FA = 2x 6 A t = 23 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DH2x6-18A Backside: Isolated 2 1 3
STGW25H120DF2, STGWA25H120DF2
STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
3~ Rectifier Bridge, half-controlled (high-side) + free wheeling Diode 10/11 19/20 21/22. Features / Advantages: Applications: Package: E2-Pack
MCM2UJ8ED hyristor Module 3~ ectifier M 8 2 D FSM 5 3~ ectifier Bridge, half-controlled (high-side) + free wheeling Diode Part number MCM2UJ8ED Backside: isolated 7 5 2 / 8 6 3 9/2 2/3 4/5 6/7 2/22 Pin
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9SAU SOT-7 PRODUCT SUMMARY V CES V V CE(on) typical at 75 A, 5 C. V I C DC 9 A at 9 C Speed 8 khz to khz Package SOT-7 Circuit Single Switch
SiC Schottky Diode. Ultra fast switching Zero reverse recovery DCG85X1200NA. V RRM = 1200 V I FAV = 2x 41 A. prelimininary. Part number DCG85X1200NA
DCG85X12N SiC Schottky Diode RRM = 12 I F = 2x 41 Ultra fast switching Zero reverse recovery Part number DCG85X12N Backside: isolated UL pending 2 3 1 4 Features / dvantages: Ultra fast switching Zero
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC
AOTB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150
General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
Insulated Gate Bipolar Transistor Ultralow V CE(on), 250 A
Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT-7 600 V.33 V 50 A DC to khz SOT-7
MPMC100B120RH NPT & Rugged Type 1200V IGBT Module
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTFB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
5SND 0500N HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 433-2-23 5SND 5N333 HiPak IGBT Module V CE = 33 V I C = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling