Features / Advantages: Applications: Package: SOT-227B (minibloc) Diode for main rectification For single and three phase bridge configurations

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1 DM5Y6N Standard ectifier 3~ ectifier M 6 I 5 D FSM 8 I Half 3~ Bridge, Common node Part number DM5Y6N Backside: isolated Features / dvantages: pplications: Package: Planar passivated chips ery low leakage current ery low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Isolation oltage: 3 ~ Industry standard outline ohs compliant Epoxy meets UL 94- Base plate: Copper internally DCB isolated dvanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

2 DM5Y6N ectifier Symbol SM M I I Definition 6 6 T 25 C J T 5 C atings typ. max. 7 F forward voltage drop I 5 T 25 C.2 F T C 95 C thermal resistance junction to case.6 K/W D max. non-repetitive reverse blocking voltage reverse current I F Conditions 5 T 25 C J F threshold voltage T J 5 C.87 for power loss calculation only r F slope resistance 5.6 mω thjc thch max. repetitive reverse blocking voltage T 25 C J bridge output current thermal resistance case to heatsink I F 5 I F 5 rectangular d ⅓ P tot total power dissipation T 25 C 65 W J J T 25 C I FSM max. forward surge current t ms; (5 Hz), sine T J 45 C t 8,3 ms; (6 Hz), sine t ms; (5 Hz), sine t 8,3 ms; (6 Hz), sine C J junction capacitance 4 ; f MHz T 25 C 27 J C T J 5 C I²t value for fusing t ms; (5 Hz), sine T 45 C t 8,3 ms; (6 Hz), sine t ms; (5 Hz), sine t 8,3 ms; (6 Hz), sine T J 5 C T 5 C J J min Unit µ m K/W k²s k²s k²s k²s J pf

3 DM5Y6N Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal 5 T J virtual junction temperature -4 5 C T op operation temperature C Weight M D M T dspp/pp dspb/pb T stg storage temperature -4 5 C ISOL mounting torque. terminal torque. creepage distance on surface striking distance through air isolation voltage t second t minute terminal to terminal terminal to backside 5/6 Hz, MS; I ISOL m g Nm Nm mm mm Logo Product Marking Part No. XXXXX Zyyww abcd ssembly Line DateCode ssembly Code Part description D M 5 Y 6 N Diode Standard ectifier (up to 8) Current ating [] Half 3~ Bridge, Common node everse oltage [] Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. DM5Y6N DM5Y6N Tube 598 Similar Part Package oltage class DM5YC6N 6 Equivalent Circuits for Simulation * on die level T 5 C I ectifier J max threshold voltage.87 max slope resistance * 4.4 mω

4 DM5Y6N Outlines 3 2 4

5 DM5Y6N ectifier Hz, 8% M T J 45 C I F [] I FSM [] 5 T J 45 C I 2 t 3 [ 2 s] T J 5 C 5 T J 5 C T J 25 C T J 25 C F [] Fig. Forward current versus voltage drop per diode 4 T J 5 C 3... t [s] Fig. 2 Surge overload current vs. time per diode t [ms] Fig. 3 I 2 t versus time per diode 8 6 P tot 4 [W] DC thh.2 K/W.4 K/W.6 K/W.8 K/W. K/W 2. K/W 5 I F()M [] 5 DC I F()M [] T amb [ C].7 Fig. 4 Power dissipation vs. forward current and ambient temperature per diode T C [ C] Fig. 5 Max. forward current vs. case temperature per diode.6.5 Z thjc.4 [K/W].3.2. Constants for Z thjc calculation: i thi (K/W) t i (s) t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode