Standard Rectifier Module

Transcription

1 Standard Module 3~ M = 6 I = 45 A DA FSM = 3 I A 3~ Bridge Part number - ~ ~ ~ + Features / Advantages: Applications: Package: FO-F-B Package with DCB ceramic educed weight Improved temperature and power cycling Planar passivated chips ery low forward voltage drop ery low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Isolation oltage: 36~ Industry standard outline ohs compliant ¼ fast-on terminals Easy to mount with two screws Base plate: DCB ceramic educed weight Advanced power cycling

2 Symbol SM M I I Definition Conditions max. non-repetitive reverse blocking voltage T J = 25 C max. repetitive reverse blocking voltage T J = 25 C reverse current = 6 = 6 J T = 5 C atings typ. max. 7 6 F forward voltage drop I = 5 A. DA F I F = 45 A I = F 5 A I F = 45 A T C = C rectangular F threshold voltage T J = 5 C.8 for power loss calculation only r F slope resistance 2.9 mω thjc thermal resistance junction to case 2 K/W thermal resistance case to heatsink.4 K/W thch bridge output current d = ⅓ P tot total power dissipation T C = 25 C 6 W I FSM max. forward surge current T J = 45 C 3 A = 325 A T J = 5 C 255 A = 275 A I²t value for fusing T J = 45 C 45 A²s = 44 A²s T J = 5 C 325 A²s = 35 A²s C J junction capacitance = 4 ; f = MHz J J T = 25 C J T J = 5 C min Unit µa J pf ma A

3 Package FO-F-B atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal A T stg storage temperature C T J virtual junction temperature -4 5 C Weight 45 g M D mounting torque Nm d Spp/App creepage distance on surface striking distance through air terminal to terminal mm d Spb/Apb terminal to backside 26.. mm isolation voltage t = second 36 ISOL 5/6 Hz, MS; I ISOL ma t = minute 3 Date Code + Assembly line yywwx Part Number Lot Number Ordering Standard Part Number Marking on Product Delivery Mode Quantity Code No. Box 4265 Equivalent Circuits for Simulation * on die level T J = 5 C I max threshold voltage.8 max slope resistance *.7 mω

4 Outlines FO-F-B x ~ ~ ~ _ 8 _ x ~ ~ ~ +

5 Hz.8 x M 5 = I F I FSM 75 5 T J =5 C T J =45 C I 2 t 3 [A 2 s] T J =45 C T J =5 C T J = 25 C 5 C T J =25 C F [] t [s] t [ms] Fig. Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode Fig. 3 I 2 tvs.timeperdiode P tot [W] DC = thja :.6 KW.8 KW KW 2 KW 4 KW 8 KW I F(A)M 3 DC = I F(A)M T A [ C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode T C [ C] Fig. 5 Max. forward current vs. case temperature per diode Z thjc. [K/W].5. t [ms] Fig. 6 Transient thermal impedance junctiontocasevs. timeper diode Constants for Z thjc calculation: i th (K/W) t i (s)