Thyristor \ Diode Module

Transcription

1 hyristor \ Diode Module = 2x16 M = 85 A A = 1.34 Phase leg Part number MCD72-16io1B Backside: isolated Features / Advantages: Applications: Package: O-24AA hyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 5/6 Hz Softstart AC motor control Motor control Power converter AC power control Lighting and temperature control solation oltage: 36 ~ ndustry standard outline ohs compliant Soldering pins for PCB mounting Base plate: B ceramic educed weight Advanced power cycling erms Conditions of usage: he data contained in this product data sheet is exclusively intended for technically trained staff. he user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. he specifications of our components may not be considered as an assurance of component characteristics. he information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 216 XYS all rights reserved Data according to EC 6747and per semiconductor unless otherwise specified b

2 ectifier Symbol Definition Conditions = 16 = 16 = 25 C J atings typ. max. 17 forward voltage drop = 15 A = 25 C 1.34 SM/DSM M/DM /D A (MS) = = = 3 A 15 A 3 A C= 85 C = 25 C J = 25 C J threshold voltage J.85 for power loss calculation only r slope resistance 3.2 mω thermal resistance junction to case.3 K/W thjc P tot total power dissipation = 25 C 333 W P GM P GA J J SM max. forward surge current t = 1 ms; (5 Hz), sine J = 45 C t = 8,3 ms; (6 Hz), sine = C J junction capacitance = 4 f = 1 MHz = 25 C 119 max. gate power dissipation t P= 3 µs C 1 average gate power dissipation t = 1 ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine J C min t = 3 µs 5 P J ²t value for fusing t = 1 ms; (5 Hz), sine = 45 C (di/dt) cr average forward current MS forward current critical rate of rise of current 18 sine t = 8,3 ms; (6 Hz), sine t = 1 ms; (5 Hz), sine t = 8,3 ms; (6 Hz), sine J = = J J = Unit µa ma A A ²s ²s ²s ²s J pf J ; f = 5 Hz t P= 2 µs; di G /dt =.45 A/µs; G =.45A; = ⅔ repetitive, = 25 A (dv/dt) critical rate of rise of voltage = ⅔ DM J cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current /D /D thch thermal resistance case to heatsink.2 K/W GK = ; method 1 (linear voltage rise) G gate trigger voltage = 6 = 25 C D DM J J = -4 C W W W A/µs A/µs /µs 2.5 G gate trigger current D = 6 J = 25 C 15 ma J = -4 C ma GD gate non-trigger voltage = ⅔ J = C.2 D DM 125 GD gate non-trigger current 1 ma L latching current t p = 1 µs J = 25 C 45 ma G =.45A; di G /dt =.45 A/µs H holding current D = 6 GK = J = 25 C 2 ma t gd gate controlled delay time = ½ J = 25 C 2 µs D DM G =.45A; di G /dt =.45A/µs non-repet., = t q turn-off time = 1 ; = 15 A; = ⅔ DM J = 1 C 185 µs di/dt = 1 A/µs dv/dt = 2 /µs t p = 2 µs 85 A 216 XYS all rights reserved Data according to EC 6747and per semiconductor unless otherwise specified b

3 Package atings Symbol Definition Conditions min. typ. max. Unit MS MS current per terminal 2 A J virtual junction temperature C op operation temperature -4 1 C Weight M D M dspp/app dspb/apb O-24AA stg storage temperature C SOL mounting torque 2.5 terminal torque 2.5 creepage distance on surface striking distance through air isolation voltage t = 1 second t = 1 minute terminal to terminal terminal to backside 5/6 Hz, MS; SOL 1 ma g Nm Nm mm mm Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. MCD72-16io1B MCD72-16io1B Box Similar Part Package oltage class MCMA85PD16B O-24AA-1B 16 MCMA11PD16B O-24AA-1B 16 Equivalent Circuits for Simulation * on die level = 125 C hyristor J max threshold voltage.85 max slope resistance * 2 mω 216 XYS all rights reserved Data according to EC 6747and per semiconductor unless otherwise specified b

4 Outlines O-24AA XYS all rights reserved Data according to EC 6747and per semiconductor unless otherwise specified b

5 hyristor SM FSM Hz, 8% M J = 45 C t 1 4 [A 2 s] = J = 45 C J AM 1 18 sin J t [s] Fig. 1 Surge overload current SM, FSM : Crest value, t: duration t [ms] Fig. 2 2 t versus time (1-1 ms) C Fig. 3 Maximum forward current at case temperature P thja [K/W] G [] P GM = 12 W 6 W P GA = 8 W t p = 3 µs t p = 5 µs [W] AM, FAM 18 sin A C 25 C GD G G ( J = -4 C) G ( J = C) G ( J = 25 C) Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode) Fig. 5 Gate trigger characteristics 12 thka [K/W].1 1 J = 25 C t gd P tot 6 [W] 4 Circuit B6 3x MCC72 or 3x MCD [µs] 1 limit typ dam A Fig. 6 hree phase rectifier bridge: Power dissipation versus direct output current and ambient temperature G Fig. 7 Gate trigger delay time 216 XYS all rights reserved Data according to EC 6747and per semiconductor unless otherwise specified b

6 ectifier P tot 15 1 thja [KW] [W] 5 Circuit W3 3x MCC72 or 3x MCD MS A Fig. 8 hree phase AC-controller: Power dissipation versus MS output current and ambient temperature thjc for various conduction angles d: Constants for Z thjc calculation: Fig. 9 ransient thermal impedance junction to case (per thyristor) thjk for various conduction angles d: Constants for Z thjk calculation: Fig. 1 ransient thermal impedance junction to heatsink (per thyristor) 216 XYS all rights reserved Data according to EC 6747and per semiconductor unless otherwise specified b