Applications: AC motor drives Solar inverter Air-conditioning systems high power converters UPS

Transcription

1 IGBT Module MITH300PF1200LP CES I C25 CE(sat) = 1200 = 420 = 1.85 Phase leg Part number MITH300PF1200LP Features / dvantages: Trench IGBT - low CE(sat) - easy paralleling due to the positive temperature coeffi cient of the on-state voltage - Tvjm = square 2x Ic - short circuit rated for 10 µsec. - low gate charge - low EMI Free wheeling diode - fast and soft reverse recovery - low operating forward voltage T2 D2 pplicatio: C motor drives Solar inverter ir-conditioning systems high power converters UPS T1 D Package: Y3-M6 Isolation oltage: 4000 ~ Industry standard outline RoHS compliant Copper base plate internally DCB isolated ultrasonic welded power terminals advanced power cycling Terms & Conditio of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifi catio of our components may not be coidered as an assurance of component characteristics. The information in the valid application- and assembly notes must be coidered. Should you require product information in excess of the data given in this product data sheet or which concer the specifi c application of your product, please contact the sales offi ce, which is respoible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales offi ce, which is respoible for you. Should you intend to use the product in aviation, in health or live endangering or life support applicatio, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, test conditio and dimeio IXYS ll rights reserved 1-5

2 IGBT T1, T2 Symbol Definitio Conditio min. typ. max. CES collector emitter voltage T J = GES max. DC gate voltage I C25 collector current T C = 25 I C80 T C = 80 I CRM repetitive peak collector current Pulse width and repetition rate should not be such that device junction temperature (T J ) does not exceed the max. rating of P tot total power dissipation T C = W CE(sat) collector emitter saturation voltage I C = 300 ; GE = 15 T J = 25 on die level T J = 150 I C = 300 ; GE = 15 T J = 25 between power terminals T J = GE(th) gate emitter threshold voltage I C = 12 m; CE = GE T J = I CES collector emitter leakage current CE = 1200 ; GE = 0 T J = 25 T J = µ µ I GES gate emitter leakage current GE = ±20 ; CE = n R G internal gate resistance 2.5 Ω C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f E on E off E rec(off) SCSO t SC I SC R thjc R thjh input capacitance output capacitance reverse trafer (Miller) capacitance total gate charge gate source charge gate drain (Miller) charge turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off short circuit safe operating area short circuit duration short circuit current thermal resistance junction to case thermal resistance junction to heatsink CE = 25 ; GE = 0 ; f = 1 MHz T J = 25 CE = 600 ; GE = -8 /15 ; I C = 300 Inductive switching CE = 600 ; I C = 300 T J = 150 GE = ±15 ; R G = 2.5 Ω (external) CEmax = 1200 CE = 720 ; GE = ±20 T J = 150 non-repetitive nf pf pf 3310 nc nc nc per IGBT with heatsink compound; IXYS test setup µs 0.11 K/W K/W IXYS reserves the right to change limits, test conditio and dimeio IXYS ll rights reserved 2-5

3 Diode D1, D2 Symbol Definitio Conditio min. typ. max. RRM max. repetitive reverse voltage T J = I F25 forward current T C = 25 I F80 T C = 80 F forward voltage I F = 300 ; GE = 0 T J = 25 on die level T J = 150 I R Q RM I RM t rr E rec Q RM I RM t rr E rec R thjc R thjh reverse current * not applicable, see Ices at IGBT reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy I F = 300 ; GE = 0 T J = 25 between power terminals T J = R = RRM T J = 25 T J = 150 * R = 600, I F = 300, -di F /dt = 5000 /µs R = 600, I F = 300, -di F /dt = 5000 /µs T J = 25 T J = 125 thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup 0.24 Equivalent Circuits for Simulation I 0 R 0 0 max R 0 max 0 max R 0 max threshold voltage slope resistance * threshold voltage slope resistance * *on die level T J = 150 T J = 175 IGBT T1, T Diode D1, D mω mω * m m µc µc 0.17 K/W K/W IXYS reserves the right to change limits, test conditio and dimeio IXYS ll rights reserved 3-5

4 Package Y3-M6 Symbol Definitio Conditio min. typ. max. Unit I RMS RMS current per terminal 300 T stg T op T J storage temperature operation temperature virtual junction temperature Weight 340 g M S mounting torque for screws to heatsink M6 to heatsink 3 5 Nm M T mounting torque for terminal screws M6 to terminals Nm ISOL isolation voltage t = 1 minute, 50 / 60 Hz, RMS 4000 R terminal-chip resistance terminal to chip 0.5 mω C P coupling capacity per switch between shorted pi of switch and back side metallization pf Circuit Part Number Lot.No: xxxxxx Date Code Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MITH300PF1200LP MITH300PF1200LP Part number M = Module I = IGBT T = Trench IGBT H = Gen = Current Rating [] PF = phase leg 1200 = Reverse oltage [] LP = Y3-M IXYS reserves the right to change limits, test conditio and dimeio IXYS ll rights reserved 4-5

5 Outlines Y3-M6 0,75 C 3x 14 ±0,2 2,8-0,1 x 0,5 ±0,03 61,4 ±0,4 30,5 ±0,7 29 ±0,5 48 ±0,25 23 ±0,5 20 ±0,8 28 ±0,4 93 ±0,3 3x M6 106,4 ±0, ±0,4 10 ±0,5 5,4 ±0,3 30,9 ±0,5 T2 T1 C 20 ±0,4 6 ±0,3 15 ±0,4 6 ±0,3 Ø 6,4 ±0,36 4x D2 D IXYS reserves the right to change limits, test conditio and dimeio IXYS ll rights reserved 5-5