I CM Repetitive Peak Collector Current tp=1ms. 150 P tot T J = I 2 t. A 2 J =125, t=10ms, V R =0V
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1 MMGTU7QCH6C 7 IGBT Module July ersion RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery PPLICTIONS Welding Machine Power Supplies Others BSOLUTE MXIMUM RTINGS Parameter/Test Conditio alues Unit CES Collector Emitter oltage GES I C Gate Emitter oltage T C = DC Collector Current T C = ± 7 I CM Repetitive Peak Collector Current tp=ms P tot Power Dissipation Per IGBT W BSOLUTE MXIMUM RTINGS Parameter/Test Conditio alues Unit RRM I F() I FRM Repetitive Reverse oltage verage Forward Current T C = Repetitive Peak Forward Current tp=ms 7 I t T J =, t=ms, R = S MacMic Science & Technology Co., Ltd. dd:#, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R.of China Tel.: Fax: Post Code: Website:
2 MMGTU7QCH6C ELECTRICL CHRCTERISTICS GE(th) CE(sat) I CES I GES R gint Q g C ies C res t d(on) t r Gate Emitter Threshold oltage Collector Emitter Saturation oltage Collector Leakage Current Gate Leakage Current Integrated Gate Resistor Gate Charge Input Capacitance Reverse Trafer Capacitance Turn on Delay Time Rise Time Parameter/Test Conditio CE = GE, I C =m I C =7, GE =, I C =7, GE =, CE =, GE =, CE =, GE =, CE =, GE =±, CE =6, I C =7, GE = CE =, GE =, f =MHz CC =6,I C =7 R G =Ω, GE =±, Inductive Load Min. Typ. Max. Unit CC =6,I C =7 6 t d(off) Turn off Delay Time R G =Ω, GE =±, t f Fall Time Inductive Load 6 CC =6,I C =7 E on Turn on Energy R G =Ω, GE =±,. E Inductive Load off Turn off Energy. I SC Short Circuit Current tpsc µs, GE =, CC = µ m n Ω µc nf pf R thjc Junction to Case Thermal Resistance ( Per IGBT). K /W ELECTRICL CHRCTERISTICS Parameter/Test Conditio F t rr Typ. Reverse Recovery Time I F =, R =6 I RRM Max. Reverse Recovery Current di F /dt=-/μs 6 Reverse Recovery Charge 7. Q RR E rec R thjcd Forward oltage Reverse Recovery Energy Junction to Case Thermal Resistance ( Per Diode) I F =, GE =, I F =, GE =, Min Max...9 Unit µc K /W
3 MMGTU7QCH6C MODULE CHRCTERISTICS Parameter/Test Conditio T Jmax T Jop T stg isol Torque Weight Max. Junction Temperature Operating Temperature Storage Temperature Isolation Breakdown oltage to heatsink to terminal alues Unit -~ -~ C, Hz(R.M.S), t=minute Recommended(M6) Recommended(M) ~.~ Nm Nm g ge=7 ge= ge= ge= ge= CE () CE () Figure. Typical Output Characteristics Figure. Typical Output Characteristics 9 6 CE = 7 9 E on E off () 6 CE =6 I C =7 GE =± Eon Eoff GE () Rg(Ω) ( ) Figure. Typical Trafer characteristics Figure. Switching Energy vs Gate Resistor
4 MMGTU7QCH6C E on E off () 6 CE =6 R g =Ω GE =± Eon Eoff R g =Ω GE =± CE () Figure. Switching Energy vs Collector Current Figure 6. Reverse Biased Safe Operating rea 7 DC I F () DC 7 T C ( ) Figure 7. Collector Current vs Case temperature IGBT -inverter 7 T C ( ) Figure. Forward current vs Case temperature 7 6 CE =6 I F = I F () E REC () F () Rg(Ω) Figure 9. Diode Forward Characteristics Figure. Switching Energy vs Gate Resistor
5 MMGTU7QCH6C CE =6 R g =Ω E REC () Z thjc (K/W).. IGBT DIODE 6 7 I F ().... Rectangular Pulse Duration (s) Figure. Switching Energy vs Forward Current Figure. Traient Thermal Impedance of Diode and Figure. Circuit Diagram Dimeio in (mm) Figure. Package Outline
T C =25 75 T C = Symbol Parameter/Test Conditions Values Unit
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