Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd
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1 2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter Welder SMPS and UPS Induction heating AGENCY AGENCY FILE NUMBER E7639 Module Characteristics ( = 25 C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit R thjc Junction-to-Case Thermal Per IGBT.9 K/W R thjcd Resistance Per Inverse Diode.22 K/W Torque Module-to-Sink Recommended (M6) 3 5 N m Torque Module Electrodes Recommended (M6) N m Weight 285 g Absolute Maximum Ratings ( = 25 C, unless otherwise specified) Symbol Parameters Test Conditions Values Unit IGBT V CES Collector - Emitter Voltage 2 V V GES Gate - Emitter Voltage ±2 V DC Collector Current =25 C 3 A =8 C 2 A puls Pulsed Collector Current =25 C, t p =ms 6 =8 C, t p =ms 42 A P tot Power Dissipation Per IGBT 4 W Junction Temperature Range -4 to +5 C T STG Storage Temperature Range -4 to +25 C V isol Insulation Test Voltage AC, t=min 3 V Diode V RRM Repetitive Reverse Voltage 2 V I F(AV) Average Forward Current =25 C 25 A =8 C 7 A I F(RMS) RMS Forward Current 25 A I FSM Non-Repetitive Surge Forward =45 C, t=ms, Sine 86 Current =45 C, t=8.3ms, Sine 92 A Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated Littelfuse, Inc Revised:7/2/6
2 2V 2A IGBT Module Electrical and Thermal Specifications ( = 25 C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit IGBT V GE(th) Gate - Emitter Threshold Voltage V CE =V GE, =8mA V V CE(sat) Collector - Emitter =2A, V GE =5V, =25 C.8 V Saturation Voltage =2A, V GE =5V, =25 C 2. V ES Collector Leakage Current V CE =2V, V GE =V, =25 C.4. ma V CE =2V, V GE =V, =25 C 6. ma I GES Gate Leakage Current V CE =V,V GE =±2V -4 4 na Q ge Gate Charge V CC =6V, =2A, V GE =±5V 2 nc C ies Input Capacitance 4.9 C oes Output Capacitance V CE =25V, V GE =V, f =MHz.4 nf C res Reverse Transfer Capacitance.7 t d(on) Turn - on Delay Time =25 C 25 ns =25 C 35 ns t r Rise Time V CC =6V =25 C 6 ns =25 C 6 ns =2A T t d(off) Turn - off Delay Time J =25 C 42 ns =25 C 49 ns R G =5Ω T t f Fall Time J =25 C 6 ns V GE =±5V =25 C 75 ns E on Turn - on Energy Inductive Load =25 C 7 mj =25 C 24.8 mj E off Turn - off Energy =25 C 3.6 mj =25 C 2.6 mj Diode V F Forward Voltage I F =2A, V GE =V, =25 C V I F =2A, V GE =V, =25 C V t rr Reverse Recovery Time I F =2A, V R =8V 26 ns I RRM Max. Reverse Recovery Current di F /dt=-a/μs A Q rr Reverse Recovery Charge =25 C 3.5 μc Littelfuse, Inc Revised:7/2/6
3 2V 2A IGBT Module Figure : Typical Output Characteristics Figure 2: Typical Transfer characteristics V CE=2V 4 4 IC (A) 3 2 =25 C =25 C IC (A) 3 2 =25 C =25 C V CE(sat) V V GE V 4 Figure 3: Switching Energy vs. Collector Current Figure 4: Switching Energy vs. Gate Resistor 24 Eon Eoff (mj) V CC=6V R G=5ohm V GE=±5V =25 C E on Eon Eoff (mj) V CC=6V =2A V GE=±5V =25 C E on 4 E off 2 E off A R G ohm 35 Figure 5: Switching Times vs. Collector Current 3 Figure 6: Switching Times vs. Gate Resistor 4 t d(off) 3 t (ns) 2 t d(on) t r t (ns) t d(off) t d(on) t f V CC=6V R G=5ohm V GE=±5V =25 C A t f 2 t r V CC=6V =2A V GE=±5V =25 C R G ohm Littelfuse, Inc Revised:7/2/6
4 2V 2A IGBT Module Figure 7: Gate Charge characteristics Figure 8: Typical Capacitances vs. V CE 25 2 V CC=6V =2A =25 C C ies V GE =V f=mhz VGE (V) 5 C (nf) C oes 5 C res Q g µc V CE V 3 35 Figure 9: Reverse Biased Safe Operating Area Figure : Short Circuit Safe Operating Area ICpuls (A) =5 C =25 C V GE =5V ICsc (A) =5 C =25 C V GE =5V t sc µs V CE V V CE V Figure : Rated Current vs =5 C V GE 5V Figure 2: Diode Forward Characteristics 6 5 IC(A) IF (A) 4 3 =25 C 5 2 =25 C Case Temperature( C) V F V Littelfuse, Inc Revised:7/2/6
5 2V 2A IGBT Module Figure 3: Transient Thermal Impedance of IGBT Figure 4: Transient Thermal Impedance of Diode - - ZthJC (K/W) -2 Duty Single Pulse ZthJC (K/W) -2 Duty Single Pulse Rectangular Pulse Duration (seconds) Rectangular Pulse Duration (seconds) Dimensions-Package D Circuit Diagram 2.8x M Littelfuse, Inc Revised:7/2/6
6 2V 2A IGBT Module Packing Options Part Number Marking Weight Packing Mode M.O.Q 285g Bulk Pack 6 Part Numbering System Part Marking System MG22 D - B A MM PRODUCT TYPE M: Power Module ASSEMBLY SITE 3 2 MODULE TYPE G: IGBT VOLTAGE RATING 2: 2V CURRENT RATING 2: 2A WAFER TYPE CIRCUIT TYPE 2x(IGBT+FWD) PACKAGE TYPE LOT NUMBER Littelfuse, Inc Revised:7/2/6
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HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
STGW25H120DF2, STGWA25H120DF2
STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation
General Description This IGBT is produced using advanced MagnaChip s Field Stop Trench IGBT 2 nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also
T C = 25 C 400 T C = 80 C 300 A
APTGT3A17D3G Phase leg Trench + Field Stop IGBT3 Power Module CES = 17 I C = 3A @ Tc = 8 C 4 Q1 3 Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A
EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 3 A VS-ENQ3L1S EMIPAK-1B (package example) PRODUCT SUMMARY TRENCH IGBT 1 V STAGE V CES 1 V V CE(ON) typical at I C = 3 A 2.12 V I C at T C
provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40
APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.6V. Symbol. Symbol V GE I C I CM I LM 30 I F 15 I FM. t SC P D T J, T STG T L.
AOK5B6D 6V, 5A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.
APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)
APTGSBRDQ(G) APTGSSRDQ(G) V, A, (ON) =.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 3 A VS-GA3TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol. V ±20 V 500ns 24 V V GE V SPIKE I C I CM I LM I F 30 I FM. t SC P D T J, T STG T L
AOKBD V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A
VSMTUFAPbF Full Bridge IGBT MTP (Ultrafast NPT IGBT), A FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient μs short circuit capability HEXFRED antiparallel
Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 7 A VS-GB75LA6UF FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 5 khz Square RBSOA SOT-227
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25
TO-247AC Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, V CC = 72V,, V GE = 5V Combines low conduction losses with
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 400 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 4 A VS-GA4TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
STGW40S120DF3, STGWA40S120DF3
STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Features Datasheet - production data Figure 1. Internal schematic diagram 10 µs of short-circuit withstand time
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.53V. Symbol V GE I C I CM I LM 20 I F 10 I FM. t SC P D T J, T STG T L. R θ JA
AOBB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
AOKS40B65H1/AOTS40B65H1
AOKS4B5H/AOTS4B5H 5V, 4AAlpha IGBT TM General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching
FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
n-channel TO-220AB 1
PD -949A IRG4BC3KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, t sc =µs,
Insulated Gate Bi-Polar Transistor Type T1600GB45G
Date:- 1 Nov, 214 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V CES Collector emitter voltage 45 V V DC link Permanent DC voltage
FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage:
Features. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @36V V CE (start), T J = 25 C, V GE = 5V Combines low conduction
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), A VS-GASA6UP SOT-7 PRIMARY CHARACTERISTICS V CES 6 V V CE(on) (typical).9 V V GE 5 V I C A Speed 8 khz to 3 khz Package SOT-7 Circuit configuration
RGT00TS65D 650V 50A Field Stop Trench IGBT
RGTTS65D 65V 5A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V 277W P D ()(2)(3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage 2) Low Switching
Packing Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V,
FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj