Features / Advantages: Applications: Package: SMPD

Transcription

1 XP GB x 100 CES 8 C CE(sat) 1.8 SOPLUS Surface Mount Power Device Phase leg SCR / GB Part number 1 9 Backside: isolated E Features / dvantages: pplications: Package: SMPD XP GB - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits Sonic diode - fast reverse recovery - low operating forward voltage - low leakage current - low temperature dependency of reverse recovery hyristor Phaseleg - buck-boost chopper Full bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier hree phase bridge - C drives - controlled rectifier solation oltage: 3000~ ndustry convenient outline RoHS compliant Epoxy meets UL 94-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight dvanced power cycling XYS all rights reserved

2 GB Symbol CES GES GEM C C 80 collector current Conditions C C 80 C Ratings min. typ. max. 100 P tot total power dissipation C C 100 W CE(sat) collector emitter saturation voltage C 1; GE 1 J C J 1 C GE(th) gate emitter threshold voltage C 0.6 m; GE CE J C CES collector emitter leakage current CE CES; GE 0 J C 0.1 m 1 C 0.1 m GES t RBSO Definition collector emitter voltage max. DC gate voltage max. transient gate emitter voltage gate emitter leakage current ±0 GE C J QG(on) total gate charge CE 600 ; GE 1 ; C 1 48 nc t r t t f E E d(on) d(off) on off CM SCSO t SC turn-on delay time 70 ns current rise time 40 ns inductive load J 1 C turn-off delay time 0 ns CE 600 ; C 1 current fall time 100 ns GE ±1 ; R G 6 Ω turn-on energy per pulse 1. mj turn-off energy per pulse 1.7 mj reverse bias safe operating area GE ±1 ; R G 6 Ω J 1 C 4 CEmax 100 short circuit safe operating area short circuit duration CEmax ; ±1 CE GE C 1 C SC short circuit current R G 6 Ω; non-repetitive 60 R thjc thermal resistance junction to case 1. K/W R thch thermal resistance case to heatsink 0.40 K/W J J ±0 tbd Unit n µs Diode RRM F max. repetitive reverse voltage C J forward current C F 80 C 80 C F forward voltage 0 C F C J 1 C J R reverse current R RRM J C 0.03 m J 1 C 0.1 m Qrr reverse recovery charge 3 µc R 600 RM max. reverse recovery current 0 -di F /dt 400 /µs J 1 C t rr reverse recovery time 30 ns F 0 ; GE 0 E rec reverse recovery energy 0.7 mj R thjc thermal resistance junction to case 1. K/W R thch thermal resistance case to heatsink 0. K/W XYS all rights reserved

3 hyristor Symbol Definition 100 C J 1 C Ratings min. typ. max forward voltage drop 1 C 1.4 (RMS) Conditions C 80 C 180 sine C J C J 0 threshold voltage J 10 C 0.87 for power loss calculation only r slope resistance 3.9 mω R thermal resistance junction to case 1.7 K/W thjc P tot total power dissipation C C 74 W SM max. forward surge current t 10 ms; (0 Hz), sine J 4 C 00 R 0 1 t 10 ms; (0 Hz), sine J 10 C 170 R 0 18 ²t value for fusing t 10 ms; (0 Hz), sine J 4 C 00 ²s R ²s t 10 ms; (0 Hz), sine J 10 C 14 ²s ²s P GM RSM/DSM RRM/DRM R/D P G average forward current RMS forward current J J 1 C C J junction capacitance 0 f 1 MHz C 0 max. gate power dissipation t P 30 µs C 10 C 10 t 300 µs average gate power dissipation P J J 10 C R Unit R J pf (di/dt) cr critical rate of rise of current J 1 C; f 0 Hz repetitive, 0 t P 00 µs; di G /dt 0.3/µs; G 0.3; D ⅔ DRM non-repet., 0 (dv/dt) critical rate of rise of voltage ⅔ 1 C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current 100 R R/D R/D R thch thermal resistance case to heatsink 0.7 D GK ; method 1 (linear voltage rise) G gate trigger voltage D 6 J C J -40 C DRM J µ m W W W /µs /µs /µs 1.. G gate trigger current D 6 J C m J -40 C 0 m GD gate non-trigger voltage D ⅔ DRM J 1 C 0. GD gate non-trigger current 4 m L latching current t p 10µs J C 7 m G 0.3; di G /dt 0.3/µs H holding current D 6 R GK J C 0 m t gd gate controlled delay time D ½ DRM J C µs G 0.3; di G /dt 0.3/µs t q turn-off time R 100 ; 0; D ⅔ DRM J 10 C 40 µs di/dt 10 /µs; dv/dt 0/µs; t p 00 µs K/W XYS all rights reserved

4 Package SMPD Ratings Symbol Definition Conditions min. typ. max. Unit RMS RMS current per terminal 100 stg storage temperature - 10 C J virtual junction temperature - 10 C Weight F C d Spp/pp d Spb/pb SOL mounting force with clip 40 creepage distance on surface striking distance through air terminal to terminal 1.6 terminal to backside 4.0 isolation voltage t 1 second t 1 minute 0/60 Hz, RMS; SOL 1 m g N mm mm Backside DCB Part number Date code ssembly line Data Matrix Code Digits 1 to 19: Part # 0 to 3: Date Code 4 to : ssembly line 6 to 31: Lot # 3: Split Lot 33 to 36: ndividual # UL Logo ~ ~ ~ XXXXXXXXXX yyww Pin 1 identifier Part number X 0 P 100 LB GB XP GB Gen 1 / std Current Rating [] Phase leg SCR / GB Reverse oltage [] SMPD-B Ordering Standard Part Number Marking on Product Delivery Mode Quantity Code No. Blister 4 ape & Reel 00 Equivalent Circuits for Simulation * on die level J 10 C hyristor GB Diode 0 R 0 0 max threshold voltage 0.87 R 0 max slope resistance * mω XYS all rights reserved

5 Outlines SMPD (8:1) ) (6x) 1 `0,0, `0, ,1 c 0,1 1) `0, 0, `0,1 18 `0,1 seating plane 9 `0,1 ) (3x) `0,0 4 `0,0 0, `0, `0, 3,7 `0, `0, 4,8 `0, ) c 0,0,7 `0,1, `0,1 13, `0,1 16, `0,1 19 `0,1 Pin number Notes: 1) potrusion may add 0. mm max. on each side ) additional max. 0.0 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 0 µm convex; position of DCB area in relation to plastic rim: ± µm (measured mm from Cu rim) 4) terminal plating: µm Ni µm Sn (gal v.) cutting edges may be partially free of plating XYS all rights reserved

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