Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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1 12V 3A Module RoHS Features 3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included Applications AC motor control Motion/servo control Photovoltaic/Fuel cell Inverter and power supplies Module Characteristics ( max Max. Junction Temperature 15 C op Operating Temperature C T stg Storage Temperature C V isol Insulation Test Voltage AC, t=1min 3 V CTI Comparative Tracking Index 21 Torque Module-to-Sink Recommended (M5) N m Torque Module Electrodes Recommended (M6) 3 5 N m Weight 35 g Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C 12 V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 5 A =8 C 3 A I CM Repetitive Peak Collector Current t p =1ms 6 A P tot Power Dissipation Per 14 W V RRM Repetitive Reverse Voltage =25 C 12 V I F(AV) =25 C 3 A Average Forward Current =8 C 18 A I FRM Repetitive Peak Forward Current t p =1ms 6 A I 2 t =125 C, t=1ms, V R =V 175 A 2 s Littelfuse, Inc Revised:1/5/16
2 12V 3A Module Electrical and Thermal Specifications ( V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =12mA V (sat) Collector - Emitter I C =3A, V GE =15V, =25 C 1.7 V Saturation Voltage I C =3A, V GE =15V, =125 C 2. V I ICES Collector Leakage Current =12V, V GE =V, =25 C 1 ma =12V, V GE =V, =125 C 5 ma I GES Gate Leakage Current =V, V GE =±15V, =125 C -4 4 na R Gint Integrated Gate Resistor 2.5 Ω Q ge Gate Charge =6V, I C =3A, V GE =±15V 2.7 μc C ies Input Capacitance 21 nf =25V, V GE =V, f =1MHz C res Reverse Transfer Capacitance 1. nf t d(on) t r t d(off) t f Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =6V I C =3A R G =2.4Ω V GE =±15V Inductive Load =25 C 16 ns =125 C 17 ns =25 C 45 ns =125 C 5 ns =25 C 46 ns =125 C 53 ns =25 C 1 ns =125 C 15 ns =25 C 13 mj =125 C 2 mj =25 C 25 mj =125 C 37 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =125 C, V CC =9V 12 A R thjc Junction-to-Case Thermal Resistance (Per ).9 K/W V F Forward Voltage I F =3A, V GE =V, =25 C 1.65 V I F =3A, V GE =V, =125 C 1.6 V t RR Reverse Recovery Time I F =3A, V R =6V 225 ns I RRM Max. Reverse Recovery Current di F /dt=-48a/µs 255 A E rec Reverse Recovery Energy =125 C 24 mj R thjcd Junction-to-Case Thermal Resistance (Per ).16 K/W NTC Characteristics ( R 25 Resistance T c =25 C 5 KΩ B 25/ K Littelfuse, Inc Revised:1/5/16
3 12V 3A Module Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics V GE =15V =25 C V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V =125 C 2 1 =125 C V V Figure 3: Typical Transfer Characteristics Figure 4: Switching Energy vs. Gate Resistor =2V =25 C =125 C Eon Eoff (mj) =6V I C=3A =125 C V GE V R G Ω Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area Eon Eoff (mj) =6V R G=2.4Ω =125 C R G=2.4Ω =125 C I C A V Littelfuse, Inc Revised:1/5/16
4 12V 3A Module Figure 7: Forward Characteristics for Inverter Figure 8: Switching Energy vs. Gate Resistort for Inverter I F=3A =6V =125 C IF (A) =125 C Erec (mj) =25 C V F V R G Ω Figure 9: Transient Thermal Impedance of and Inverter Figure 1: NTC Characteristics 1 1 ZthJC (K/W).1 1 R Rectangular Pulse Duration (seconds) C Circuit Diagram Littelfuse, Inc Revised:1/5/16
5 12V 3A Module Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q 35g Bulk Pack 6 Part Numbering System Part Marking System MG123 WB - B N2 MM PRODUCT TYPE M: Power Module MODULE TYPE G: VOLTAGE RATING 12: 12V CURRENT RATING 3: 3A ASSEMBLY SITE WAFER TYPE CIRCUIT TYPE 2x(+FWD) PACKAGE TYPE LOT NUMBER Space reserved for QR code Littelfuse, Inc Revised:1/5/16
Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Insulated Gate Bipolar Transistor (Ultrafast IGBT), A SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC A at 8 C V CE(on) typical at A, 5 C.93 V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single
IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
STGW25H120DF2, STGWA25H120DF2
STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
AOT15B65M1/AOB15B65M1
AOT5B65M/AOB5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOTFBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
Applications: AC motor drives Solar inverter Air-conditioning systems high power converters UPS
IGBT Module MITH300PF1200LP CES I C25 CE(sat) = 1200 = 420 = 1.85 Phase leg Part number MITH300PF1200LP Features / dvantages: Trench IGBT - low CE(sat) - easy paralleling due to the positive temperature
Features. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 3 A VS-GA3TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
STGW40S120DF3, STGWA40S120DF3
STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Features Datasheet - production data Figure 1. Internal schematic diagram 10 µs of short-circuit withstand time
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.7V TO-220F C G E. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTF5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling diode
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 400 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 4 A VS-GA4TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
Insulated Gate Bipolar Transistor (Trench IGBT), 180 A
Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C(DC) 85 A at 9 C V CE(on) typical at A, 5 C.55 V I F(DC) 3 A at 9 C Speed 8 khz to 3 khz Package
Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A
VSMTUFAPbF Full Bridge IGBT MTP (Ultrafast NPT IGBT), A FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient μs short circuit capability HEXFRED antiparallel
Primary MTP IGBT Power Module
Primary MTP IGBT Power Module MTP PRIMARY CHARACTERISTICS FRED Pt AP DIODE, T J = 5 C V RRM 6 V I F(DC) at C A V F at 25 C at 6 A 2.8 V IGBT, T J = 5 C V CES 6 V V CE(on) at 25 C at 6 A.98 V I C at C 83
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V TO-263 D 2 PAK C E E G E AOB5B65M1. Symbol V GE I C I CM I LM I F I FM. t SC P D T L.
AOTBM/AOBBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode
IGBT Module Sixpack MWI 15-12A7. I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.0 V. Short Circuit SOA Capability Square RBSOA
MWI 15127 IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 30 CES = 1200 CE(sat) typ. = 2.0 Part name (Marking on product) MWI15127 13 1 5 9 2 10 1 15 14 E72873 Pin confi guration see
V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AODBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
Industry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 62mm IGBT module MIAA-HB12FA-3N 12 V 3 A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L
AOKB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
CM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT >
CM8HCB-34N CM24HCB-34N I C 8 A V CES 7 V -element in pack Insulated type CSTBT TM / Soft recovery diode AlSiC baseplate APPLICATION Traction drives,
Data Sheet GHIS040A060S A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =600V I C = 40A @T C = 100 0 C Features Field StopTrench Fast IGBT Low voltage drop Low tail current Switching frequency up to 50 khz Low leakage