Features / Advantages: Applications: Package: TO-240AA
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- Madlyn Maxwell
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1 hyristor Module RRM = 2x 2 A = 6A =.2 Phase leg Part number MCD56-2ioB Backside: isolated Features / Advantages: Applications: Package: O-2AA hyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 5/6 Hz Softstart AC motor control Motor control Power converter AC power control Lighting and temperature control solation oltage: 36 ~ ndustry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: B ceramic Reduced weight Advanced power cycling 23 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 2365a
2 Rectifier Symbol Definition = 2 = 25 C J = 25 C Ratings min. typ. max. 3 forward voltage drop = A = 25 C.26 A (RMS) = = = Conditions 2 A A 2 A C = 85 C 8 sine = 25 C J = 25 C J threshold voltage J = 25 C.85 for power loss calculation only r slope resistance 3.7 mω R thermal resistance junction to case.5 K/W thjc P tot total power dissipation C = 25 C 222 W SM max. forward surge current t = ms; (5 Hz), sine J = 5 C.5 ka t = 8,3 ms; (6 Hz), sine R =.62 ka t = ms; (5 Hz), sine J = 25 C.28 ka t = 8,3 ms; (6 Hz), sine R =.38 ka ²t value for fusing t = ms; (5 Hz), sine J = 5 C.3 ka²s t = 8,3 ms; (6 Hz), sine R =.9 ka²s t = ms; (5 Hz), sine J = 25 C 8.3 ka²s t = 8,3 ms; (6 Hz), sine = 7.87 ka²s P GM RSM/DSM RRM/DRM R/D P GA average forward current RMS forward current J J = 25 C C J junction capacitance = f = MHz = 25 C 7 max. gate power dissipation t P = 3 µs C = 25 C t = 3 µs 5 average gate power dissipation P J J = 25 C R Unit R J pf (di/dt) cr critical rate of rise of current J = 25 C; f = 5 Hz repetitive, = 5 A t P = 2 µs; di G /dt =.5A/µs; G =.5A; D = ⅔ DRM non-repet., = 6 A (dv/dt) critical rate of rise of voltage = ⅔ =25 C cr max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage reverse current, drain current = 2 R R/D R/D R thch thermal resistance case to heatsink.2 K/W D GK = ; method (linear voltage rise) G gate trigger voltage D = 6 J = 25 C J = - C DRM J 5 5 µa ma A A W W W A/µs A/µs /µs.5.6 G gate trigger current D = 6 J = 25 C ma J = - C 2 ma GD gate non-trigger voltage D = ⅔ DRM J = 25 C.2 GD gate non-trigger current ma L latching current t p = µs J = 25 C 5 ma G =.5A; di G /dt =.5A/µs H holding current D = 6 R GK = J = 25 C 2 ma t gd gate controlled delay time D = ½ DRM J = 25 C 2 µs G =.5A; di G /dt =.5A/µs t q turn-off time R = ; = 5 A; D = ⅔ DRM J = 25 C 5 µs di/dt = A/µs; dv/dt = 2/µs; t p = 2 µs 23 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 2365a
3 Package O-2AA Ratings Symbol Definition Conditions min. typ. max. Unit RMS RMS current per terminal 2 A J virtual junction temperature - 25 C op operation temperature - C stg storage temperature - 25 C Weight M D M d Spp/App d Spb/Apb SOL mounting torque 2.5 terminal torque 2.5 creepage distance on surface striking distance through air isolation voltage t = second t = minute terminal to terminal terminal to backside 5/6 Hz, RMS; SOL ma g Nm Nm mm mm Ordering Standard Part Number Marking on Product Delivery Mode Quantity Code No. MCD56-2ioB MCD56-2ioB Box Similar Part Package oltage class MCMA65PD2B O-2AA-B 2 MCMA85PD2B O-2AA-B 2 Equivalent Circuits for Simulation * on die level J = 25 C hyristor R max threshold voltage.85 R max slope resistance * 2.5 mω 23 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 2365a
4 Outlines O-2AA XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 2365a
5 hyristor Hz, 8% R = RRM 2 8 sin SM FSM 5 J = 25 C J = 5 C 2 t [A 2 s] J = 5 C J = 25 C 8 AM t [s] Fig. Surge overload current SM, FSM : Crest value, t: duration t [ms] Fig. 2 2 t versus time (- ms) 5 5 C Fig. 3 Maximum forward current at case temperature 5 R thja [K/W].8 : G, J =25 C 2: G, J = 25 C 3: G, J =- C P [W] 5 8 sin AM, FAM 5 5 A Fig. Power dissipation vs. onstate current and ambient temperature (per thyristor/diode) G [] : P GA =.5W GD, J =25 C 5: P GM = 5W 6: P GM =W. 2 3 G [ma] Fig. 5 Gate trigger charact R thka [K/W]. J =25 C typ. Limit P tot.3 t gd [W] 3. [µs] 2 Circuit B6 3x MCC56 or 3x MCD dam A Fig. 6 hree phase rectifier bridge: Power dissipation versus direct output current and ambient temperature G [ma] Fig. 7 Gate trigger delay time 23 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 2365a
6 Rectifier 6 5 R thja [KW] P tot 3 [W] 2 Circuit W3 3x MCC56 or 3x MCD Fig. 8 RMS A hree phase AC-controller: Power dissipation vs. RMS output current and ambient temperature R thjc for various conduction angles d: Constants for Z thjc calculation: Fig. 9 ransient thermal impedance junction to case (per thyristor) R thjk for various conduction angles d: Constants for Z thjk calculation: Fig. ransient thermal impedance junction to heatsink (per thyristor) 23 XYS all rights reserved Data according to EC 677and per semiconductor unless otherwise specified 2365a
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