Phase Control SCR, 70 A

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1 Phase Control SCR, 70 A 70TPS..PbF High oltage Series ishay High Power Products 2 (A) DESCRIPTION/FEATURES The 70TPS..PbF High oltage Series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control applications. Available RoHS* COMPLIANT Super (K) (G) 3 PRODUCT SUMMARY T at 100 A < 1.4 I TSM 1400 A RRM 1200/1600 Typical applications are in input rectification (soft start) or AC-switches or high current crow-bar as well as others phase-control circuits. These products are designed to be used with ishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free ( PbF suffix). MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS ALUES UNITS I T(A) Sinusoidal waveform 70 A I RMS Lead current limitation 75 RRM / DRM Range 1200/1600 I TSM 1400 A T 100 A, T J = 25 C 1.4 d/dt 500 /µs di/dt 150 A/µs T J - 40 to 125 C OLTAGE RATINGS PART NUMBER RRM / DRM, MAXIMUM REPETITIE PEAK AND OFF-STATE OLTAGE RSM, MAXIMUM NON-REPETITIE PEAK REERSE OLTAGE I RRM /I DRM AT 125 C ma 70TPS12PbF TPS16PbF * Pb containing terminations are not RoHS compliant, exemptions may apply 1

2 70TPS..PbF High oltage Series ishay High Power Products Phase Control SCR, 70 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum average on-state current I T(A) T C = 82 C, 180 conduction half sine wave 70 Maximum continuous RMS on-state I T(RMS) Lead current limitation 75 current as AC switch A Maximum peak, one-cycle 10 ms sine pulse, rated RRM applied 1200 I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1400 Maximum I 2 t for fusing I 2 t 10 ms sine pulse, rated RRM applied Initial T J = T J maximum ms sine pulse, no voltage reapplied A 2 s Maximum I 2 t for fusing I 2 t t = 0.1 to 10 ms, no voltage reapplied A 2 s Low level value of threshold voltage T(TO) High level value of threshold voltage T(TO) T J = 125 C Low level value of on-state slope resistance r t mω High level value of on-state slope resistance r t Maximum peak on-state voltage TM 100 A, T J = 25 C 1.4 Maximum rate of rise of turned-on current di/dt T J = 25 C 150 A/µs Maximum holding current I H 200 T J = 25 C Maximum latching current I L 400 T J = 25 C 1.0 Maximum reverse and direct leakage current I RRM /I DRM T J = 125 C R = Rated RRM / DRM 15 ma Maximum rate of rise of off-state voltage d/dt T J = 125 C 500 /µs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum peak gate power P GM 10 T = 30 µs Maximum average gate power P G(A) 2.5 W Maximum peak gate current I GM 2.5 A Maximum peak negative gate voltage - GM 10 GT Maximum required DC gate voltage to trigger T J = 25 C Anode supply = 6 resistive load 1.5 T J = - 40 C 4.0 T J = 125 C 1.1 T J = 25 C 100 ma T J = - 40 C 270 T J = 125 C 80 Maximum DC gate voltage not to trigger GD T J = 120 C, DRM = Rated value 0.25 Maximum DC gate current not to trigger I GD 6 ma 2

3 Phase Control SCR, 70 A 70TPS..PbF High oltage Series ishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum junction temperature range T J - 40 to 125 C Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, R thjc DC operation 0.27 junction to case Maximum thermal resistance, R thja 40 C/W junction to ambient Typical thermal resistance, R thcs Mounting surface, smooth and greased 0.2 case to heatsink 6 g Approximate weight 0.21 oz. Mounting torque Marking device minimum 6 (5) kgf cm maximum 12 (10) (lbf in) 70TPS12 Case style Super TPS16 ΔR thj-hs CONDUCTION PER JUNCTION SINE HALF WAE CONDUCTION RECTANGULAR WAE CONDUCTION DEICE UNITS TPS C/W Note The table above shows the increment of thermal resistance R thj-hs when devices operate at different conduction angles than DC 3

4 70TPS..PbF High oltage Series ishay High Power Products Phase Control SCR, 70 A ORDERING INFORMATION TABLE Device code 70 T P S 16 PbF Current rating (70 = 70 A) 2 - Circuit configuration: T = Thyristor 3 - Package: 4 - P = Super-247 Type of silicon: S = Standard recovery rectifier 5 - oltage code x 100 = RRM 6 - None = Standard production PbF = Lead (Pb)-free 12 = =

5 TO-247, TO-247 modified Outline Dimensions ishay High Power Products DIMENSIONS in millimeters (inches) Case style TO (0.626) (0.602) 3.65 (0.144) 3.55 (0.139) DIA (0.209) 4.70 (0.185) 2.50 (0.098) 1.50 (0.059) 5.70 (0.225) 5.30 (0.208) (0.800) (0.775) 5.50 (0.217) 4.50 (0.177) (2 places) 4.30 (0.170) 3.70 (0.145) (0.583) (0.559) 1.40 (0.056) 1.00 (0.039) (0.430) (0.427) 2.20 (0.087) 0.80 (0.032) 0.40 (0.016) 2.40 (0.095) Case style TO-247 (modified) (0.626) (0.602) 3.65 (0.144) 3.55 (0.139) DIA (0.209) 4.70 (0.185) 2.50 (0.098) 1.50 (0.059) 5.70 (0.225) 5.30 (0.208) (0.800) (0.775) 5.50 (0.217) 4.50 (0.177) (2 places) (0.170) 3.70 (0.145) (0.583) (0.559) 1.40 (0.056) 1.00 (0.039) (0.430) (0.427) 2.20 (0.087) 0.80 (0.032) 0.40 (0.016) 2.40 (0.095) 1

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