SD233N/R SERIES 235A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2094 rev. B 10/06. case style B-8.

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1 SD33N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series.5 µs recovery time High voltage ratings up to 5V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version case style B-8 Maximum junction temperature 5 C RoHS Compliant 35A Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics Parameters SD33N/R Units I F(AV) 35 T C C I F(RMS) 37 A I 5Hz 55 Hz 57 A I 5Hz 5 KA Hz 38 KA s V RRM range 3 to 5 V t rr.5 T J 5 C T J - to 5 C case style B-8

2 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V RRM repetitive V RSM, maximum non- I RRM Type number Code peak and off-state voltage repetitive peak voltage T J = 5 C V V ma SD33N/R Forward Conduction Parameter SD33N/R Units Conditions I F(AV) Max. average forward current 35 A 8 conduction, half sine Case temperature C I F(RMS) Max. RMS current 37 5 C case temperature I FSM Max. peak, one-cycle 55 t = ms No voltage non-repetitive forward current 57 t = 8.3ms reapplied 3 A t = ms 5% V RRM 8 t = 8.3ms reapplied Sinusoidal half wave, I t Maximum I t for fusing 5 t = ms No voltage Initial T J 38 KA s t = 8.3ms reapplied 7 t = ms 5% V RRM 98 t = 8.3ms reapplied I t Maximum I t for fusing 5 KA s t =. to ms, no voltage reapplied V F(TO) Low level of threshold voltage.5 (.7% x π x I F(AV) < I < π x I F(AV) ), T J V V F(TO) High level of threshold voltage.8 (I > π x I F(AV) ), T J r f Low level of forward slope resistance. m Ω (.7% x π x I F(AV) < I < π x I F(AV) ), T J r f High level of forward slope resistance.53 (I > π x I F(AV) ), T J V FM Max. forward voltage 3. V I pk = A, T J = 5 C, t p = µs square pulse Recovery Characteristics Code T J = 5 o C Test conditions Max. T J = 5 C typical t rr I pk di/dt (*) V r t rr Q rr I 5% I RRM Square 5% I RRM (μs) (A) (A/μs) (V) (μs) (μc) (A) S (*) di/dt = T J = 5 C

3 Thermal and Mechanical Specification Parameter SD33N/R Units Conditions T J Max. operating temperature range - to 5 T stg Max. storage temperature range - to 5 C R thjc Max. thermal resistance, junction to case. DC operation K/W R thcs Max. thermal resistance, case to heatsink. Mounting surface, smooth, flat and greased T Mounting torque ± % 5 Nm Not lubricated threads wt Approximate weight 5 g Case style B-8 See Outline Table ΔR thjc Conduction (The following table shows the increment of thermal resistence R thjc when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions 8..8 T J K/W Ordering Information Table Device Code SD 3 3 N 5 S5 P S C - Diode - Essential part number = Fast recovery - N = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud) 5 - Voltage code: Code x = V RRM (see Voltage Ratings table) - t rr code (see Recovery Characteristics table) 7 - P = Stud base B-8 3/" UNF-A M = Stud base B-8 M X S = Isolated lead with silicone sleeve (Red = Reverse Polarity; Blue = Normal Polarity) T = Threaded Top Terminal 3/8" UNF-A None = Not isolated lead 9 - C = Ceramic housing

4 Outlines Table CERAMIC HOUSING (.3) 5(.) ±.3(.) (.7) MIN..5 (.) DIA. C.S. 7mm Case Style B-8 All dimensions in millimeters (inches) 5 (9.5) 7.5 (.8) 55 (.) 5 (.5) MIN. 38 (.5) DIA. (.83) 7 (.85) SW 5 8 (3.5) 3/"-UNF-A * * FOR METRIC DEVICE: M x.5 - LENGHT SCREW (.83) CERAMIC HOUSING 7 (.7) DIA. 3/8"-UNF-A 5 (.98) Case Style B-8 with top thread terminal 3/8" All dimensions in millimeters (inches) 77.5 (3.5) 8.5 (3.7) 38 (.5) DIA. (.83) 7 (.85) 7.5 (.8) SW 5 3/"-UNF-A * * FOR METRIC DEVICE: M x.5 - LENGHT SCREW (.83)

5 Maximum Allowable Case Temperature ( C) 3 SD33N/ R Se rie s R thjc (DC) =. K/W Conduction Angle Maximum Allowable Case Temperature ( C) 3 R thjc (DC) =. K/ W 9 Conduction Period DC 3 3 Average Forward Current (A) Average Forward Current (A) Fig. - Current Ratings Characteristics Fig. - Current Ratings Characteristics Maximum Average Forward Power Loss (W) RMS Lim it Conduction Angle T = 5 C J Maximum Average Forward Power Loss (W) DC RMS Limit Conduction Period T = 5 C J Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. - Forward Power Loss Characteristics Peak Half Sine Wave Forward Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) At Any Rated Load Condition And With 5% Rated V RRM Applied Following Surge Initial T J= 5 Hz.83 5 Hz. s Fig. 5 - Maximum Non-repetitive Surge Current Peak Half Sine Wave Forward Current (A) 5 3 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J= 5 C No Voltage Reapplied 5% Rated V RRM Reapplied.. Pulse Train Duration (s) Fig. - Maximum Non-repetitive Surge Current 5

6 Instantaneous Forward Current (A) T = 5 C J T = 5 C J Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance Z (K/ W) thjc.. Steady State Value: R thjc =. K/ W (DC Operation).... Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristic 5 Forward Recovery (V) 5 V FP T = 5 C I J T J = 5 C Rate Of Rise Of Forward Current - di/ dt (A/ us) Fig. 9 - Typical Forward Recovery Characteristics Maximum Reverse Recovery Time - Trr (µs) T J= 5 C; V r > V I FM = A Sine Pulse 5 A 5 A Ra t e Of Fa ll Of Fo rwa rd Current - d i/ d t (A/ µs) Maximum Reverse Recovery Charge - Qrr (µc) 8 I = A FM Sine Pulse 5 A 5 A T J= 5 C; V r > V Rate Of Fall Of Forward Current - di/dt (A/µs) Maximum Reverse Recovery Current - Irr (A) 5 3 I FM = A Sine Pulse 5 A 5 A T J= 5 C; V r > V Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. - Recovery Time Characteristics Fig. - Recovery Charge Characteristics Fig. - Recovery Current Characteristics

7 .3.5 E SD33N/ R Se rie s Sinusoidal Pulse T J = 5 C, V RRM = 5V dv/ dt = V/ µs joules per pulse 5 Hz Sinusoidal Pulse T C= 55 C, V RRM = 5V d v/ dt = V/ us E Fig. 3 - Maximum Total Energy Loss Per Pulse Characteristics Fig. - Frequency Characteristics.3.5 E SD33N/R Series Trapezoidal Pulse T J= 5 C, V RRM = 5V dv/ dt = V/ µs di/ dt = 3A/ µs joules per pulse Fig. 5 - Maximum Total Energy Loss Per Pulse Characteristics 5 Trapezoidal Pulse T C= 55 C, V RRM = 5V dv/ dt = V/ us, di/dt = 3A/us 5 Hz E Pulse Ba sewid th (µs) Fig. - Frequency Characteristics SD33N/ R Se rie s Trapezoidal Pulse T J= 5 C, V RRM = 5V dv/ dt = V/ µs di/dt = A/µs.3.5 joules per pulse Trapezoidal Pulse T C= 55 C, V RRM = 5V dv/ dt = V/ us di/ dt = A/ us 5 5 Hz E Fig. 7 - Maximum Total Energy Loss Per Pulse Characteristics E Fig. 8 - Frequency Characteristics 7

8 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 33 Kansas St., El Segundo, California 95, USA Tel: (3) 5-75 TAC Fax: (3) Visit us at for sales contact information. / 8