Fast Recovery Diodes (Hockey PUK Version), 375 A

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1 VS- Fast Recovery Diodes (Hockey PUK Version), 375 A B-PUK (DO-AB) PRIMARY CHARACTERISTICS I F(AV) 375 A Package B-PUK (DO-AB) Circuit configuration Single FEATURES High power fast recovery diode series 4.5 μs recovery time High voltage ratings up to 4 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC B-PUK (DO-AB) Maximum junction temperature 25 C Material categorization: for definitions of compliance please see TYPICAL APPLICATIONS Snubber diode for GTO High voltage freewheeling diode Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 375 A I F(AV) T hs 55 C I F(RMS) 48 Hz 5 A I FSM 6 Hz 576 V RRM Range to 4 V 4.5 μs t rr T J 25 C T J -4 to +25 ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD263C..SL VOLTAGE CODE V RRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V I RRM MAXIMUM AT T J = T J MAXIMUM ma Revision: -Jan-8 Document Number: 9373 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS- FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current conduction, half sine wave 375 () A I at heatsink temperature F(AV) Double side (single side) cooled 55 (85) C Maximum RMS forward current I F(RMS) 25 C heatsink temperature double side cooled 725 t = ms No voltage 5 Maximum peak, one-cycle forward, t = 8.3 ms reapplied 576 A I non-repetitive surge current FSM t = ms % V RRM 463 t = 8.3 ms reapplied Sinusoidal half wave, 48 initial T J = T J t = ms No voltage maximum 5 reapplied Maximum I 2 t for fusing I 2 t = 8.3 ms 38 t ka 2 s t = ms % V RRM 7 t = 8.3 ms reapplied 98 Maximum I 2 t for fusing I 2 t t =. to ms, no voltage reapplied 5 ka 2 s Low level value of threshold voltage V F(TO) (6.7 % x x I F(AV) < I < x I F(AV) ), T J = T J maximum.56 High level value of threshold voltage V F(TO)2 (I > x I F(AV) ), T J = T J maximum.7 V Low level value of forward slope resistance r f (6.7 % x x I F(AV) < I < x I F(AV) ), T J = T J maximum.64 High level value of forward slope resistance r f2 (I > x I F(AV) ), T J = T J maximum.53 mw Maximum forward voltage drop V FM I pk = A, T J = T J maximum, t p = ms sinusoidal wave 3.2 V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT T J = 25 C TEST CONDITIONS TYPICAL VALUES AT T J = C CODE t rr AT 25 % I RRM (μs) I pk SQUARE PULSE (A) di/dt () (A/μs) V r (V) t rr AT 25 % I RRM (μs) Q rr (μc) S I rr (A) I FM dir dt t rr Q rr t I RM(REC) Note () di/dt = 25 A/μs, T J = 25 C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating T temperature range J -4 to 25 C Maximum storage temperature range T Stg -4 to Maximum thermal resistance, DC operation single side cooled. R junction to heatsink thj-hs DC operation double side cooled.5 K/W Mounting force, ± % 98 () N (kg) Approximate weight 23 g Case style See dimensions - link at the end of datasheet B-PUK (DO-AB) R thj-hs CONDUCTION SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE TEST CONDITIONS T J = T J maximum Note The table above shows the increment of thermal resistance R thj-hs when devices operate at different conduction angles than DC Revision: -Jan-8 2 Document Number: 9373 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT UNITS K/W

3 VS- Maximum Allowable Heatsink Temperature ( C) (Single Side Cooled) R thj-hs (DC) =. K/W Conduction Angle Average Forward Current (A) Maximum Allowable Heatsink Temperature ( C) 3 2 (Double Side Cooled) R thj-hs (DC) =.5 K/W 9 8 Conduction Period DC 8 Average Forward Current (A) Fig. - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maxim um Allowable Heatsink Tem perature ( C) 3 2 (Single Side Cooled) R th J-hs (D C ) =. K / W 9 8 Conduction Period DC Average Forw ard Current (A) Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) Conduction Angle T J = 25 C 3 Average Forward Current (A) RMS Limit Fig. 5 - Forward Power Loss Characteristics Maxim um Allowable Heatsink Tem perature ( C) 3 SD 2 63C..SL Series 2 (D ouble Side C ooled) R th J-hs (D C ) =. 5 K / W 9 8 Conduction Angle A verag e Fo rw ard C urre nt (A ) Fig. 3 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) DC 6 3 RMS Limit Conduction Period 2 T J = 25 C Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: -Jan-8 3 Document Number: 9373 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS- Pe ak Ha lf Sin e W ave Fo rw a rd Curre nt ( A) At Any Rated Load Condition And With % Rate d V RRMA pplied Follo w ing Surg e Initia l T J = 25 6 Hz.83 Hz. s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous Forward Current (A) T = 25 C J T = 25 C J Instantaneous Forward Voltage (V) Fig. 9 - Forward Voltage Drop Characteristics Peak Half Sine Wave Forward Current (A) Maxim um No n Re pe titive Surg e Current Versus Pulse Train Duration. Initial T J = 25 C N o V o lt ag e R e a pp lie d % Rated V Re applie d RRM SD263C..SL Se ries.. Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Transien t Th erm al Im pedan ce Z (K/W) thj -hs.. Steady State Value R th J-hs =. K/W (Sin gle Side C ooled) R th J-hs =.5 K/W (Double Side Cooled) (D C Operation).... Square W ave Pulse D uratio n (s) Fig. - Thermal Impedance Z thj-hs Characteristic Fo rw ard R ec ov ery (V) 4 V FP I T J = 25 C T J = 25 C 8 8 Rate Of Rise Of Forward Current - di/dt (A/us) Fig. - Typical Forward Recovery Characteristics Revision: -Jan-8 4 Document Number: 9373 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS- Maximum Reverse Recovery Time - Trr (µs) T J = 25 C; V r > V I FM = A Sine Pu lse A A 2 Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 2 - Recovery Time Characteristics E Pulse Basew idth ( µs) jo ules per pulse Sinusoida l Pulse T J = 25 C, V RRM= V dv/dt = V/µs Fig. 5 - Maximum Total Energy Loss Per Pulse Characteristics Maximum Reverse Recovery Charge - Qrr (µc) 8 I FM = A Sine Pulse A A SD 263 C..SL Se rie s T J = 25 C; V r > V 2 3 R ate O f Fall Of Forwa rd Current - d i/dt (A/µs) Fig. 3 - Recovery Charge Characteristics Hz Sinusoid al Pulse T C = 55 C, V RR M= V dv/dt = V/us E Pulse Basew idth (µs) Fig. 6 - Frequency Characteristics M axim um Re verse Rec ove ry C urre nt - Irr (A) 3 I FM = A Sine Pulse A A T J = 25 C ; V r > V 2 3 Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 4 - Recovery Current Characteristics.5.3 E Fig. 7 - Maximum Total Energy Loss Per Pulse Characteristics Pulse Basewidth (µs) 2 Trapezoidal Pulse T J = 25 C, V RRM= V dv/dt = V/µs di/dt = 3A/µs joules per pulse 6 4 Revision: -Jan-8 5 Document Number: 9373 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS- Hz Trapezoidal Pu ls e T C = 5 5 C, V RRM= 5 V dv/dt = V/us, di/dt = 3A/us E Pulse Basewidth (µs) Fig. 8 - Frequency Characteristics Trapezoidal Pu lse T J = 25 C, V RRM= V dv/dt = V/µs di/dt = A/µs.3.5 E Pulse Basewidth (µs) Fig. 9 - Maximum Total Energy Loss Per Pulse Characteristics joules per pulse E Pulse Basew idth (µs) Fig. 2 - Frequency Characteristics Hz Trapezoidal Pulse T C = 55 C, V RRM= V dv/dt = V/us, di/dt = A/us ORDERING INFORMATION TABLE Device code VS- SD 26 3 C 45 S L product 2 - Diode 3 - Essential part number 4-3 = fast recovery 5 - C = ceramic PUK 6 - Voltage code x = V RRM (see Voltage Ratings table) 7 - t rr code 8 - L = PUK case B-PUK (DO-AB) Dimensions LINKS TO RELATED DOCUMENTS Revision: -Jan-8 6 Document Number: 9373 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Outline Dimensions B-PUK (DO-AB) DIMENSIONS in millimeters (inches) 3.5 (.4) DIA. NOM. x.8 (.7) deep MIN. both ends 58.5 (2.3) DIA. MAX..8 (.3) both ends 34 (.34) DIA. MAX. 2 places C 26.9 (.6) 25.4 () A 53 (2.9) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 2-Jul-7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9

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