Phase Control Thyristors (Stud Version), 110 A
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1 Phase Control Thyristors (Stud Version), 110 A TO-209AC (TO-94) PRODUCT SUMMARY I T(AV) 110 A V DRM /V RRM 400 V, 1600 V V TM 1.52 V I GT 150 ma T J -40 C to 140 C Package TO-209AC (TO-94) Diode variation Single SCR FEATURES Center gate International standard case TO-209AC (TO-94) Compression bonded encapsulation for heavy duty operations such as severe thermal cycling Hermetic glass-metal case with ceramic insulator (Glass-metal seal over 1200 V) Designed and qualified for industrial level Material categorization: For definitions of compliance please see TYPICAL APPLICATIONS DC motor controls Controlled DC power supplies AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I T(AV) 110 A T C 90 C I T(RMS) 175 I 50 Hz 2700 TSM 60 Hz 2830 A I 2 t 50 Hz Hz 33.2 ka 2 s V DRM /V RRM 400 to 1600 V t q Typical μs T J -40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE V DRM /V RRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V I DRM /I RRM MAXIMUM AT T J = T J MAXIMUM ma VS-ST110S Revision: 11-Mar-14 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current 110 A I T(AV) 180 conduction, half sine wave at case temperature 90 C Maximum RMS on-state current I T(RMS) DC at 85 C case temperature 175 t = 10 ms No voltage 2700 Maximum peak, one-cycle t = 8.3 ms reapplied 2830 A I TSM non-repetitive surge current t = 10 ms % V RRM 2270 t = 8.3 ms reapplied Sinusoidal half wave, 2380 t = 10 ms No voltage initial T J = T J maximum 36.4 t = 8.3 ms reapplied 33.2 Maximum I 2 t for fusing I 2 t ka 2 s t = 10 ms % V RRM 25.8 t = 8.3 ms reapplied 23.5 Maximum I 2 t for fusing I 2 t t = 0.1 to 10 ms, no voltage reapplied 364 ka 2 s Low level value of threshold voltage V T(TO)1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 0.90 High level value of threshold voltage V T(TO)2 (I > x I T(AV) ), T J = T J maximum 0.92 V Low level value of on-state slope resistance r t1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 1.79 High level value of on-state slope resistance r t2 (I > x I T(AV) ), T J = T J maximum 1.81 m Maximum on-state voltage V TM I pk = 350 A, T J = T J maximum, t p = 10 ms sine pulse 1.52 V Maximum holding current I H 600 T J = 25 C, anode supply 12 V resistive load Typical latching current I L 0 ma SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of Gate drive 20 V, 20, t r 1 μs di/dt rise of turned-on current T J = T J maximum, anode voltage 80 % V DRM 500 A/μs Gate current 1 A, di g /dt = 1 A/μs Typical delay time t d V d = 0.67 % V DRM, T J = 25 C 2.0 I TM = A, T J = T J maximum, di/dt = 10 A/μs, Typical turn-off time t q V R = 50 V, dv/dt = 20 V/μs, gate 0 V, t p = 500 μs μs BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dv/dt T J = T J maximum linear to 80 % rated V DRM 500 V/μs Maximum peak reverse and off-state leakage current I RRM, I DRM T J = T J maximum, rated V DRM /V RRM applied 20 ma Revision: 11-Mar-14 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 DC gate current required to trigger I GT TRIGGERING VALUES PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS Maximum peak gate power P GM T J = T J maximum, t p 5 ms 5 Maximum average gate power P G(AV) T J = T J maximum, f = 50 Hz, d% = 50 1 W Maximum peak positive gate current I GM 2.0 A Maximum peak positive gate voltage + V GM T J = T J maximum, t p 5 ms 20 Maximum peak negative gate voltage - V GM 5.0 V T J = 25 C Maximum required gate trigger/ ma T J = -40 C T J = 125 C current/voltage are the lowest 40 - T J = -40 C value which will trigger all units DC gate voltage required to trigger V GT T J = 25 C 6 V anode to cathode applied V T J = 125 C Maximum gate current/voltage not to trigger is the maximum 10 ma T J = T J maximum value which will not trigger any DC gate voltage not to trigger V GD unit with rated V DRM anode to cathode applied 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction T J -40 to 125 temperature range C Maximum storage temperature range T Stg -40 to 150 Maximum thermal resistance, R thjc DC operation junction to case K/W Maximum thermal resistance, R thcs Mounting surface, smooth, flat and greased 0.08 case to heatsink Non-lubricated threads 15.5 (137) Nm Mounting torque, ± 10 % Lubricated threads 14 (120) (lbf in) Approximate weight 130 g Case style See dimensions - link at the end of datasheet TO-209AC (TO-94) R thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS T J = T J maximum Note The table above shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC K/W Revision: 11-Mar-14 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 Maximum Allowable Case Temperature ( C) 130 R thjc (DC) = K/W Conduction Angle Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Allowable Case Temperature ( C) 130 R thjc (DC) = 1.95 K/W Conduction Period DC Average On-state Current (A) Maximum Average On-state Power Loss (W) RMS Limit Conduction Angle 0.4 K/ W 0.5 K/ W 0.6 K/ W 0.8 K/W R = 0.1 K/ W - Delta R 20 T J = 125 C Average On-state Current (A) 1 K/ W 1.2 K/ W 0.3 K/ W 0.2 K/ W Maximum Allowable Ambient Temperature ( C) Fig. 3 - On-State Power Loss Characteristics thsa Maximum Average On-state Power Loss (W) DC RMS Limit 80 Conduction Period T J = 125 C Average On-state Current (A) 0.2 K/W 0.3 K/W 0.4 K/W 0.5 K/ W 0.6 K/W 0.8 K/ W 1 K/ W 1.2 K/W R = 0.1 K/ W - Delta R Maximum Allowable Ambient Temperature ( C) Fig. 4 - On-State Power Loss Characteristics thsa Revision: 11-Mar-14 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = Hz Hz 0.0 s Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125 C No Voltage Reapplied Rated V RRM Reapplied Pulse Train Duration (s) 00 Instantaneous On-state Current (A) 0 Tj = 25 C Tj = 125 C Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thjc (K/W) Steady State Value R thjc = K/W (DC Operation) Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristic Revision: 11-Mar-14 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 Instantaneous Gate Voltage (V) 10 1 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (b) VGD Tj=125 C Tj=25 C Tj=-40 C IGD Device: Frequency Limited by PG(AV) (a) Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms (1) (2) (3) (4) ORDERING INFORMATION TABLE Device code VS- ST 11 0 S 16 P 0 V L PbF product 2 - Thyristor 3 - Essential part marking 4-0 = Converter grade 5 - S = Compression bonding stud 6 - Voltage code x = V RRM (see Voltage Ratings table) 7 - P = Stud base 20UNF threads 8-0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 2 = Flag terminals (for cathode and gate terminals) 9 - V = Glass-metal seal (only up to 1200 V) 10 - None = Ceramic housing (over 1200 V) Critical dv/dt: None = 500 V/µs (standard value) L = 0 V/µs (special selection) 11 - None = Standard production - PbF = Lead (Pb)-free Dimensions LINKS TO RELATED DOCUMENTS Revision: 11-Mar-14 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 TO-209AC (TO-94) for Outline Dimensions DIMENSIONS in millimeters (inches) Glass metal seal Ø 8.5 (0.33) 16.5 (0.65) MAX. Ø 4.3 (0.17) 2.6 (0.10) MAX. 9.5 (0.37) MIN. Flexible lead 20 (0.79) MIN. C.S. 16 mm 2 (0.025 s.i.) Red silicon rubber C.S. 0.4 mm 2 ( s.i.) 157 (6.18) 170 (6.69) Red cathode White gate 215 ± 10 (8.46 ± 0.39) 70 (2.75) MIN. 29 (1.14) MAX. Red shrink 12.5 (0.49) MAX. White shrink Ø 23.5 (0.93) MAX. Fast-on terminals AMP REF (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Document Number: For technical questions, contact: indmodules@vishay.com Revision: 23-Sep-08 1
8 Outline Dimensions TO-209AC (TO-94) for DIMENSIONS in millimeters (inches) Ceramic housing 16.5 (0.65) MAX. Ø 8.5 (0.33) Ø 4.3 (0.17) 2.6 (0.10) MAX. 9.5 (0.37) MIN. Flexible lead 20 (0.79) MIN. C.S. 16 mm 2 (0.025 s.i.) Red silicon rubber C.S. 0.4 mm 2 ( s.i.) 157 (6.18) 170 (6.69) Red cathode White gate 215 ± 10 (8.46 ± 0.39) 70 (2.75) MIN. 29 (1.14) MAX. Red shrink 12.5 (0.49) MAX. White shrink Ø 22.5 (0.88) MAX. 21 (0.83) MAX. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. For technical questions, contact: indmodules@vishay.com Document Number: Revision: 23-Sep-08
9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 90
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