High Voltage, Input Rectifier Diode, 20 A

Transcription

1 VS-2ETS8FP-M3, VS-2ETS2FP-M3 High Voltage, Input Rectifier Diode, 2 A 2 2L TO-22 FullPAK PRIMARY CHARACTERISTICS Cathode 2 Anode I F(AV) 2 A V R 8 V, 2 V V F at I F. V I FSM 3 A T J max. C Package 2L TO-22 FullPAK Circuit configuration Single FEATURES Very low forward voltage drop C max. operating junction temperature Glass passivated pellet chip junction Designed and qualified according to JEDEC -JESD 47 Fully isolated package (V INS = V RMS ) UL pending Material categorization: for definitions of compliance please see APPLICATIONS Input rectification switches and output rectifiers which are available in identical package outlines DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T A = C, T J = C common heatsink of C/W 8 22 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Sinusoidal waveform 2 A V RRM Range 8, 2 V I FSM 3 A V F A, T J = C. V T J -4 to + C VOLTAGE RATINGS PART NUMBER V RRM, MAXIMUM PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-2ETS8FP-M3 8 9 VS-2ETS2FP-M3 2 3 I RRM AT C ma Revision: -Sep-7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-2ETS8FP-M3, VS-2ETS2FP-M3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) T C = C, 8 conduction half sine wave 2 Maximum peak one cycle ms sine pulse, rated V RRM applied A I FSM non-repetitive surge current ms sine pulse, no voltage reapplied 3 ms sine pulse, rated V RRM applied 36 Maximum I 2 t for fusing I 2 t ms sine pulse, no voltage reapplied 442 A 2 s Maximum I 2 t for fusing I 2 t t =. ms to ms, no voltage reapplied 442 A 2 s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V FM 2 A, T J = C. V Forward slope resistance r t.4 m T J = C Threshold voltage V F(TO).8 V T J = C. Maximum reverse leakage current I RM V R = Rated V RRM T J = C. ma THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T J, T Stg -4 to + C Maximum thermal resistance, junction to case R thjc DC operation 2.8 Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight Mounting torque Marking device R thja 62 R thcs Mounting surface, smooth, and greased. C/W 2 g.7 oz. minimum 6. (.) kgf cm maximum 2 () (lbf in) Case style 2L TO-22 FullPAK 2ETS8FP 2ETS2FP Revision: -Sep-7 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-2ETS8FP-M3, VS-2ETS2FP-M3 Maximum Allowable Case Temperature ( C) Conduction angle Maximum Average Forward Power Loss (W) DC RMS limit Conduction period T J = C 2 Fig. - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics Maximum Allowable CaseTemperature ( C) Conduction period 3 Fig. 2 - Current Rating Characteristics 3 Peak Half Sine Wave Forward Current (A) 3 2 At any rated load condition and with rated V RRM applied following surge. Initial T J = C at 6 Hz.83 s at Hz. s Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. - Maximum Non-Repetitive Surge Current Maximum Average ForwardPower Loss (W) T J = C 6 2 RMS limit Conduction angle 24 Peak Half Sine Wave Forward Current (A) 3 2. Maximum non-repetitive surge current vs. pulse train duration. Initial T J = C No voltage reapplied Rated V RRM reapplied. Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: -Sep-7 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-2ETS8FP-M3, VS-2ETS2FP-M3 I F - InstantaneousForward Current (A) T J = C T J = C Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Z thjc - Transient Thermal Impedance ( C/W) Single pulse (thermal resistance) D =. D =.33 D =. D =.7 D = Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Revision: -Sep-7 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-2ETS8FP-M3, VS-2ETS2FP-M3 ORDERING INFORMATION TABLE Device code VS- 2 E T S 2 FP -M product - Current rating (2 = 2 A) - Circuit configuration: E = single diode - Package: T = TO-22 - Type of silicon: S = standard recovery rectifier - Voltage ratings - FullPAK - Environmental digit: 8 = 8 V 2 = 2 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-2ETS8FP-M3 Antistatic plastic tubes VS-2ETS2FP-M3 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: -Sep-7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Outline Dimensions 2L TO-22 FullPAK DIMENSIONS in millimeters.6. Hole Mold flash bleeding Exposed Cu TYP TYP R.7 (2 places) R Bottom view ±. ±. Revision: 6-Jul-7 Document Number: 967 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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