High Voltage, Input Rectifier Diode, 20 A

Transcription

1 VS-2ETS..FPPbF Series, VS-2ETS..FP-M3 Series High Voltage, Input Rectifier Diode, 2 A FEATURES Very low forward voltage drop 2 TO-22 FULL-PAK 3 Cathode 2 3 Anode C max. operating junction temperature Designed and qualified according to JEDEC -JESD47 Fully isolated package (V INS = V RMS ) UL E78996 approved Material categorization: For definitions of compliance please see Available PRODUCT SUMMARY Package TO-22FP I F(AV) 2 A V R 8 V to 2 V V F at I F. V I FSM 3 A T J max. C Diode variation Single die APPLICATIONS Input rectification switches and output rectifiers which are available in identical package outlines DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T A = C, T J = C common heatsink of C/W 8 22 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Sinusoidal waveform 2 A V RRM Range 8/2 V I FSM 3 A V F A, T J = C. V T J -4 to C VOLTAGE RATINGS PART NUMBER V RRM, MAXIMUM PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-2ETS8FPPbF, VS-2ETS8FP-M3 8 9 VS-2ETS2FPPbF, VS-2ETS2FP-M3 2 3 I RRM AT C ma Revision: 9-Dec-3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-2ETS..FPPbF Series, VS-2ETS..FP-M3 Series ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) T C = C, 8 conduction half sine wave 2 Maximum peak one cycle non-repetitive surge current Maximum I 2 t for fusing I FSM ms sine pulse, no voltage reapplied 3 ms sine pulse, rated V RRM applied I 2 t ms sine pulse, rated V RRM applied 36 ms sine pulse, no voltage reapplied 442 Maximum I 2 t for fusing I 2 t t =. ms to ms, no voltage reapplied 442 A 2 s A A 2 s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V FM 2 A, T J = C. V Forward slope resistance r t.4 m T J = C Threshold voltage V F(TO).8 V T J = C. Maximum reverse leakage current I RM V R = Rated V RRM T J = C. ma THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range T J, T Stg -4 to C Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight Mounting torque Marking device R thjc DC operation 2.8 R thja 62 R thcs Mounting surface, smooth and greased. C/W 2 g.7 oz. minimum 6. (.) kgf cm maximum 2 () (lbf in) Case style TO-22 FULL-PAK (94/V) 2ETS8FP 2ETS2FP Revision: 9-Dec-3 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-2ETS..FPPbF Series, VS-2ETS..FP-M3 Series Maximum Allowable Case Temperature ( C) Conduction angle Maximum Average Forward Power Loss (W) DC RMS limit Conduction period T J = C 2 Fig. - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics Maximum Allowable Case Temperature ( C) Conduction period 3 Fig. 2 - Current Rating Characteristics 3 Peak Half Sine Wave Forward Current (A) 3 2 At any rated load condition and with rated V RRM applied following surge. Initial T J = C at 6 Hz.83 s at Hz. s Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. - Maximum Non-Repetitive Surge Current Maximum Average Forward Power Loss (W) RMS limit Conduction angle T J = C 24 Peak Half Sine Wave Forward Current (A) 3 2. Maximum non-repetitive surge current versus pulse train duration. Initial T J = C No voltage reapplied Rated V RRM reapplied. Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 9-Dec-3 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-2ETS..FPPbF Series, VS-2ETS..FP-M3 Series T J = C I F - Instantaneous Forward Current (A) T J = C Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Z thjc - Transient Thermal Impedance ( C/W) Single pulse (thermal resistance) D =. D =.33 D =. D =.7 D = Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Revision: 9-Dec-3 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 ORDERING INFORMATION TABLE VS-2ETS..FPPbF Series, VS-2ETS..FP-M3 Series Device code VS- 2 E T S 2 FP PbF product - Current rating (2 = 2 A) - Circuit configuration: E = Single diode - Package: T = TO-22 - Type of silicon: S = Standard recovery rectifier - Voltage ratings 8 = 8 V 2 = 2 V - FULL-PAK - Environmental digit: PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-2ETS8FPPbF Antistatic plastic tubes VS-2ETS8FP-M3 Antistatic plastic tubes VS-2ETS2FPPbF Antistatic plastic tubes VS-2ETS2FP-M3 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-22 FP PbF TO-22 FP -M Revision: 9-Dec-3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 DIMENSIONS in millimeters Outline Dimensions.6.4 Hole R.7 (2 places) R. 2.4 TYP TYP Lead assignments Diodes Cathode 3 - Anode TYP. ±. ±. Conforms to JEDEC outline TO-22 FULL-PAK Revision: 2-Jul- Document Number: 9 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT