Thyristor High Voltage, Phase Control SCR, 25 A
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1 Thyristor High Voltage, Phase Control SCR, 25 TO-220B () (K) (G) 3 FETURES Easy control peak current at charger power up to reduce passive / electromechanical components Meets JESD 20 class whisker test Flexible solution for reliable C power rectification EC-Q qualified Material categorization: for definitions of compliance please see PRIMRY CHRCTERISTICS I T(V) 6 V DRM /V RRM 200 V V TM.25 V I GT 45 m T J -40 C to +25 C Package TO-220B Circuit configuration Single SCR PPLICTIONS On-board and off-board EV/HEV battery chargers Renewable energy inverters DESCRIPTION The high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. OUTPUT CURRENT IN TYPICL PPLICTIONS PPLICTIONS SINGLE-PHSE BRIDGE THREE-PHSE BRIDGE UNITS Capacitive input filter T = 55 C,, common heatsink of C/W 8 22 MJOR RTINGS ND CHRCTERISTICS PRMETER TEST CONDITIONS VLUES UNITS I T(V) Sinusoidal waveform 6 I RMS 25 V RRM /V DRM 200 V I TSM 320 V T 6,.25 V dv/dt 500 V/μs di/dt 50 /μs T J -40 to +25 C VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM PEK REVERSE VOLTGE V V DRM, MXIMUM PEK DIRECT VOLTGE V I RRM /I DRM T 25 C m Revision: 04-Jun-208 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
2 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES TYP. MX. Maximum average on-state current I T(V) T C = 93 C, conduction half sine wave 6 Maximum RMS on-state current I RMS 25 Maximum peak, one-cycle, non-repetitive surge current I TSM ms sine pulse, rated V RRM applied 270 ms sine pulse, no voltage reapplied 320 Maximum I 2 t for fusing I 2 t ms sine pulse, rated V RRM applied 365 ms sine pulse, no voltage reapplied 55 2 s Maximum I 2 t for fusing I 2 t t = 0. to ms, no voltage reapplied s Maximum on-state voltage drop V TM 6,.25 V On-state slope resistance r t 2.0 m Threshold voltage V T(TO).0 V Maximum reverse and direct leakage 0.5 I current RM /I DM V R = rated V RRM /V DRM node supply = 6 V, resistive load, initial I m Holding current I T =, H - 50 Maximum latching current I L node supply = 6 V, resistive load, 200 Maximum rate of rise of off-state voltage dv/dt T J = T J max., linear to 80 C, V DRM = R g - k = open 500 V/μs Maximum rate of rise of turned-on current di/dt 50 /μs UNITS TRIGGERING PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum peak gate power P GM 8.0 Maximum average gate power P G(V) 2.0 W Maximum peak positive gate current +I GM.5 Maximum peak negative gate voltage -V GM V Maximum required DC gate current to trigger node supply = 6 V, resistive load, 45 m node supply = 6 V, resistive load, T J = - C 60 node supply = 6 V, resistive load, 20 V GT Maximum required DC gate voltage to trigger node supply = 6 V, resistive load, 2.0 node supply = 6 V, resistive load,.0 V node supply = 6 V, resistive load, T J = - C 2.5 Maximum DC gate voltage not to trigger V GD 0.25, V DRM = rated value Maximum DC gate current not to trigger I GD 2.0 m SWITCHING PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Typical turn-on time t gt 0.9 Typical reverse recovery time t rr 4 μs Typical turn-off time t q Revision: 04-Jun Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
3 THERML ND MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -40 to 25 C Maximum thermal resistance, junction to case R thjc DC operation. Maximum thermal resistance, junction to ambient R thj 62 C/W Typical thermal resistance, case to heatsink R thcs Mounting surface, smooth and greased 0.5 pproximate weight 2 g 0.07 oz. minimum 6 (5) kgf cm Mounting torque maximum 2 () (lbf in) Marking device Case style TO-220B 25TTS2H Maximum llowable Case Temperature ( C) 20 0 R thjc (DC) =. C/W Conduction angle Maximum verage On-State Power Loss (W) RMS limit Conduction angle verage On-State Current () verage On-State Current () Fig. - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics Maximum llowable Case Temperature ( C) R thjc (DC) =. C/W Conduction period DC Maximum verage On-State Power Loss (W) DC RMS limit Conduction period verage On-State Current () verage On-State Current () Fig. 2 - Current Rating Characteristics Fig. 4 - On-State Power Loss Characteristics Revision: 04-Jun Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
4 Peak Half Sine Wave On-State Current () t any rated load condition and with rated V RRM applied following surge Initial T J = 50 C at 60 Hz s at 50 Hz 0.00 s VS- Peak Half Sine Wave On-State Current () Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. VS- Initial T J = 50 C No voltage reapplied Rated V RRM reapplied 20 0 Number of Equal mplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current () Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt: V, 20 Ω t r = 0.5 µs, t p 6 µs b) Recommended load line for 30 % rated di/dt: V, 65 Ω t r = µs, t p 6 µs V GD IGD (b) T J = C (a) Instantaneous Gate Current () () P GM = 40 W, t p = ms (2) P GM = 20 W, t p = 2 ms (3) P GM = 8 W, t p = 5 ms (4) P GM = 4 W, t p = ms (4) (3) (2) () Frequency limited by P G(V) Fig. 8 - Gate Characteristics Revision: 04-Jun Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
5 Z thjc - Transient Thermal Impedance ( C/W) 0. Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance Z thjc Characteristics Steady state value (DC operation) ORDERING INFORMTION TBLE Device code VS- 25 T T S 2 H M product 2 - Current rating (25 = 25 ) 3 - Circuit configuration: T = single thyristor 4 - Package: 5 - T = TO-220B Type of silicon: S = standard recovery rectifier 6 - Voltage rating 2 = 200 V 7 - H = EC-Q qualified 8 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION ntistatic plastic tubes Dimensions Part marking information LINKS TO RELTED DOCUMENTS Revision: 04-Jun Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
6 Outline Dimensions TO-220B DIMENSIONS in millimeters and inches (6) E E2 (7) P 0.04 M B M B Seating plane (E) Thermal pad (6) D Q 2 3 (6) (H) D D H (7) C C D2 (6) Detail B L (2) D 3 x b 3 x b2 3 2 Detail B C E (6) L Base metal (b, b2) Plating 0.05 M B M Lead tip 2 x e e c 2 Lead assignments Diodes. - node/open 2. - Cathode 3. - node View - c c (4) (4) b, b3 Section C - C and D - D Conforms to JEDEC outline TO-220B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES E , E E b e b e b H , 7 b L c L c P D Q D to 93 to 93 D Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension and finish uncontrolled in L (3) Dimension D, D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b, b3 and c apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H, D2 and E (7) Dimensions E2 x H define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except 2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Document Number: For technical questions within your region, please contact one of the following: Revision: 08-Mar- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
7 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 207 VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 900
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