Thyristor High Voltage, Phase Control SCR, 40 A

Transcription

1 Thyristor High Voltage, Phase Control SCR, 40 TO-247C 2 () (K) (G) 3 PRIMRY CHRCTERISTICS I T(V) 35 V DRM /V RRM 800 V, 200 V V TM.45 V I GT 50 m T J -40 C to +25 C Package TO-247C Circuit configuration Single SCR FETURES Designed and qualified according to JEDEC -JESD 47 Low I GT parts available 25 C max. operating junction temperature Material categorization: for definitions of compliance please see vailable PPLICTIONS Typical usage is in input rectification crowbar (soft start) and C switch motor control, UPS, welding and battery charge DESCRIPTION The VS-40TPS... high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 25 C junction temperature. MJOR RTINGS ND CHRCTERISTICS PRMETER TEST CONDITIONS VLUES UNITS I T(V) Sinusoidal waveform 35 I RMS 55 V RRM /V DRM 800/200 V I TSM 600 V T 40, T J = 25 C.45 V dv/dt 00 V/μs di/dt 0 /μs T J -40 to +25 C VOLTGE RTINGS PRT NUMBER V RRM /V DRM, MXIMUM REPETITIVE PEK ND OFF-STTE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-40TPS08PbF, VS-40TPS08-M VS-40TPS08PbF, VS-40TPS08-M VS-40TPS2PbF, VS-40TPS2-M VS-40TPS2PbF, VS-40TPS2-M I RRM /I DRM T 25 C m Revision: 4-Sep-7 Document Number: 94388

2 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum average on-state current I T(V) T C = 79 C, 80 conduction half sine wave 35 Maximum continuous RMS I T(RMS) 55 on-state current as C switch Maximum peak, one-cycle ms sine pulse, rated V RRM applied 500 I TSM non-repetitive surge current ms sine pulse, no voltage reapplied 600 Maximum I 2 t for fusing I 2 t ms sine pulse, rated V RRM applied Initial T J = T J max. 250 ms sine pulse, no voltage reapplied s Maximum I 2 t for fusing I 2 t t = 0. ms to ms, no voltage reapplied s Low level value of threshold voltage V T(TO).02 V High level value of threshold voltage V T(TO)2.23 T J = 25 C Low level value of on-state slope resistance r t 9.74 m High level value of on-state slope resistance r t Maximum peak on-state voltage V TM, T J = 25 C.85 V Maximum rate of rise of turned-on current di/dt T J = 25 C 0 /μs Maximum holding current I H node supply = 6 V, resistive load, initial T J =, I T = 25 C 200 Maximum latching current I L node supply = 6 V, resistive load, T J = 25 C 300 T J = 25 C 0.5 Maximum reverse and direct leakage current I RRM/ I DRM V R = Rated V RRM /V DRM T J = 25 C Maximum rate of rise of off-state voltage TPS2 dv/dt T J = T J maximum, linear to 80 % V DRM, R g - k = 0 Maximum rate of rise of off-state voltage 00 40TPS2 m V/μs TRIGGERING PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum peak gate power P GM Maximum average gate power P G(V) 2.5 W Maximum peak gate current I GM 2.5 Maximum peak negative gate voltage - V GM V Maximum required DC gate voltage to trigger V GT T J = 25 C node supply = 6 V resistive load 2.5 T J = - 40 C 4.0 T J = 25 C.7 Maximum required DC gate current to trigger Maximum DC gate voltage not to trigger for 40TPS2 Maximum DC gate current not to trigger for 40TPS2 Maximum DC gate voltage not to trigger for 40TPS2 Maximum DC gate current not to trigger for 40TPS2 I GT V GD T J = - 40 C 270 T J = 25 C node supply = 6 V resistive load 50 T J = 25 C 80 T J = 25 C, for 40TPS08PbF and 40TPS2PbF 40 T J = 25 C, V DRM = Rated value V m 0.25 V I GD 6 m V GD T J = 25 C, V DRM = Rated value 0.5 V I GD m Revision: 4-Sep-7 2 Document Number: 94388

3 THERML ND MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -40 to +25 C Maximum thermal resistance, R thjc 0.6 junction to case DC operation Maximum thermal resistance, R thj 40 C/W junction to ambient Maximum thermal resistance, case to heatsink R thcs Mounting surface, smooth and greased 0.2 pproximate weight Mounting torque Marking device 6 g 0.2 oz. minimum 6 (5) kgf cm maximum 2 () (lbf in) Case style TO-247C 40TPS08 40TPS2 40TPS08 40TPS2 Maximum llowable Case Temperature ( C) 30 R thjc (DC) = 0.6 C/W 20 Conduction ngle Maximum llowable Case Temperature ( C) R thjc (DC) = 0.6 C/ W Conduction Period DC verage On-state Current () Fig. - Current Rating Characteristics verage On-state Current () Fig. 2 - Current Rating Characteristics Revision: 4-Sep-7 3 Document Number: 94388

4 Maximum verage On-state Power Loss (W) RMS Limit Conduction ngle T = 25 C J Peak Half Sine Wave On-state Current () t ny Rated Load Condition nd With Rated V RRM pplied Following Surge. Initia l T J= Hz Hz 0.00 s 40TPS.. Se rie s verage On-state Current () Fig. 3 - On-State Power Loss Characteristics Number Of Equal mplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum verage On-state Power Loss (W) DC RMS Lim it Conduction Period 40TPS.. Se rie s T = 25 C J Peak Half Sine Wave On-state Current () Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 25 C No Voltage Reapplied Rated V RRM Reapplied verage On-state Current () Fig. 4 - On-State Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 0 Instantaneous On-state Current () T J= 25 C T J= 25 C 40TPS.. Se rie s Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Revision: 4-Sep-7 4 Document Number: 94388

5 Instantaneous Gate Voltage (V) 0 Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 30 Ω t r = 0.5 μs, t p 6 μs b) Recommended load line for 30 % rated di/dt: 20 V, 65 Ω t r = μs, t p 6 μs b) TJ = 25 C a) TJ = 50 C TJ = - 40 C V GD I GD 40TPS..Series Frequency limited by PG(V) Instantaneous Gate Current () Fig. 8 - Gate Characteristics () PGM = 0 W, t p = 500 μs (2) PGM = 50 W, t p = ms (3) PGM = 20 W, t p = 2.5 ms (4) PGM = W, t p = 5 ms (4) (3) (2) () Instantaneous Gate Voltage (V) 0 Rectangular gate pulse a) Recommended load line for rated di/dt: 20 V, 30 Ω t r = 0.5 μs, t p 6 μs b) Recommended load line for 30 % rated di/dt: 20 V, 65 Ω t r = μs, t p 6 μs T J = 25 C T J = 25 C T J = - 40 C b) a) V GD Frequency limited by PG(V) I 0. GD Instantaneous Gate Current () Fig. 9 - Gate Characteristics, () PGM = 0 W, t p = 500 μs (2) PGM = 50 W, t p = ms (3) PGM = 20 W, t p = 2.5 ms (4) PGM = W, t p = 5 ms (4) (3) (2) () Transient Thermal Impedance Z thjc ( C/W) D = 0.50 D = 0.33 D = 0.25 D = 0.7 D = 0.08 Single Pulse Square Wave Pulse Duration (s) Fig. - Thermal Impedance Z thjc Characteristics Steady State Value (DC Operation) Revision: 4-Sep-7 5 Document Number: 94388

6 ORDERING INFORMTION TBLE Device code VS- 40 T P S 2 PbF product 2 - Current rating (40 = 40 ) 3 - Circuit configuration: 4 - Package: 5 T = Thyristor P = TO Type of silicon: S = standard recovery rectifier 6 - Voltage ratings 7 - = low Igt selection 40 m maximum None = standard Igt selection 8-08 = 800 V 2 = 200 V Environmental digit: PbF = lead (Pb)-free and RoHS compliant -M3 = halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-40TPS08PbF ntistatic plastic tubes VS-40TPS08-M ntistatic plastic tubes VS-40TPS08PbF ntistatic plastic tubes VS-40TPS08-M ntistatic plastic tubes VS-40TPS2PbF ntistatic plastic tubes VS-40TPS2-M ntistatic plastic tubes VS-40TPS2PbF ntistatic plastic tubes VS-40TPS2-M ntistatic plastic tubes Dimensions Part marking information LINKS TO RELTED DOCUMENTS TO-247C PbF TO-247C-M Revision: 4-Sep-7 6 Document Number: 94388

7 TO-247C - 50 mils L/F Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E S 2 Ø K M D B M (6) Φ P (Datum B) D2 Φ P 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L C L See view B (4) E 0.0 M D B M 2 x b2 3 x b 0. M C M b4 2 x e C View - Plating (b, b3, b5) Base metal DDE E (c) c C C (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E E b e 5.46 BSC 0.25 BSC b Ø K b L b L b Ø P b Ø P c Q c R D S 5.5 BSC 0.27 BSC D Notes () Dimensioning and tolerancing per SME Y4.5M-994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (0.54") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c and Q Revision: 20-pr-7 Document Number: 95542

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