Hyperfast Rectifier, 8 A FRED Pt

Transcription

1 Hyperfast Rectifier, 8 FRED Pt Vishay Semiconductors 2L TO-22C Base cathode 2 2L TO-22 FULL-PK FETURES Hyperfast recovery time, extremely low Q rr 75 C maximum operating junction temperature For PFC CCM operation True 2 pin package Low forward voltage drop Low leakage current Fully isolated package (V INS = 25 V RMS ) Compliant to RoHS directive 22/95/EC Halogen-free according to IEC definition Designed and qualified for industrial level Cathode 3 node VS-8E2TX6 PRODUCT SUMMRY Cathode 2 node VS-8E2TX6FP Package 2L TO-22C, 2L TO-22 FP I F(V) 8 V R 6 V V F at I F 3.2 V t rr (typ.) 3 ns T J max. 75 C Diode variation Single die DESCRIPTION/PPLICTIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the ac-to-dc section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST CONDITIONS VLUES UNITS Peak repetitive reverse voltage V RRM 6 V T C = 29 C verage rectified forward current I F(V) 8 FULL-PK T C = 7 C Non-repetitive peak surge current I FSM 77 Peak repetitive forward current I FM 6 Operating junction and storage temperatures T J, T Stg - 65 to 75 C ELECTRICL SPECIFICTIONS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μ I F = Forward voltage V F I F = 8, T J = 5 C V R = V R rated Reverse leakage current I R T J = 5 C, V R = V R rated μ Junction capacitance C T V R = 6 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V Document Number: 937 For technical questions within your region, please contact one of the following: Revision: 8-ug- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com

2 Vishay Semiconductors Hyperfast Rectifier, 8 FRED Pt DYNMIC RECOVERY CHRCTERISTICS ( unless otherwise specified) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Reverse recovery time Peak recovery current Reverse recovery charge t rr I RRM Q rr I F =., di F /dt = /μs, V R = 3 V I F = 8., di F /dt = /μs, V R = 3 V I F = 8 di F /dt = 2 /μs I F = 8 di F /dt = 6 /μs I F = 8 di F /dt = 2 /μs I F = 8 di F /dt = 6 /μs I F = 8 di F /dt = 2 /μs I F = 8 di F /dt = 6 /μs ns nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg C Thermal resistance, R thjc junction to case FULL-PK Thermal resistance, junction to ambient per leg R thj Typical socket mount C/W Typical thermal resistance, case to heatsink Weight Mounting torque Marking device R thcs Mounting surface, flat, smooth and greased Case style TO-22 Case style TO-22 FULL-PK g oz. 6 (5) - 2 () 8E2TX6 8E2TX6FP kgf cm (lbf in) For technical questions within your region, please contact one of the following: Document Number: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 8-ug-

3 Hyperfast Rectifier, 8 FRED Pt Vishay Semiconductors I F - Instantaneous Forward Current () 937_ T J = 75 C T J = 5 C V F - Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage I R - Reverse Current (m) _2... T J = 75 C T J = 5 C T J = C T J = 75 C T J = 5 C V R - Reverse Voltage (V) C T - Junction Capacitance (pf) 937_ V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 937_4.. Single pulse (thermal resistance) D =.5 D =.2 D =. D =.5 D =.2 D =..... t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics (TO-22) Document Number: 937 For technical questions within your region, please contact one of the following: Revision: 8-ug- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 3

4 Vishay Semiconductors Hyperfast Rectifier, 8 FRED Pt Z thjc - Thermal Impedance ( C/W) 937_5.. Single pulse (thermal resistance) D =.5 D =.2 D =. D =.5 D =.2 D =..... t - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance Z thjc Characteristics (FULL-PK) llowable Case Temperature ( C) 937_ Square wave (D =.5) 8 % rated V R applied See note () DC I F(V) - verage Forward Current () Fig. 6 - Maximum llowable Case Temperature vs. verage Forward Current (TO-22) llowable Case Temperature ( C) 937_ Square wave (D =.5) 8 % rated V R applied See note () DC I F(V) - verage Forward Current () Fig. 7 - Maximum llowable Case Temperature vs. verage Forward Current (FULL-PK) 25 verage Power Loss (W) _8 5 D =. D =.2 D =.5 D =. D =.2 D =.5 DC RMS limit I F(V) - verage Forward Current () Fig. 8 - Forward Power Loss Characteristics Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = Rated V R For technical questions within your region, please contact one of the following: Document Number: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 8-ug-

5 Hyperfast Rectifier, 8 FRED Pt Vishay Semiconductors I F = 8, 3 I F = 8, t rr (ns) Q rr (nc) 25 2 I F = 8, 2 I F = 8, 5 937_9 di F /dt (/μs) 937_ di F /dt (/μs) Fig. 9 - Typical Reverse Recovery Time vs. di F /dt Fig. - Typical Stored Charge vs. di F /dt V R = 2 V L = 7 μh. Ω D.U.T. di F /dt adjust G D IRFP25 S Fig. - Reverse Recovery Parameter Test Circuit (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. Q rr = t rr x I RRM 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 2 - Reverse Recovery Waveform and Definitions Document Number: 937 For technical questions within your region, please contact one of the following: Revision: 8-ug- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 5

6 Vishay Semiconductors Hyperfast Rectifier, 8 FRED Pt ORDERING INFORMTION TBLE Device code VS- 8 E 2 T X 6 FP -E Vishay Semiconductors product suffix 2 - Current rating (8 = 8 ) 3 - Circuit configuration: E = Single diode 4-2 = True 2 pin package 5 - T = TO X = Hyperfast recovery time 7 - Voltage code (6 = 6 V) 8 - None = TO-22 FP = FULL-PK 9 - Environmental digit: -E = RoHS compliant and terminations lead (Pb)-free -M = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER TUBE MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-8E2TX6-E 5 ntistatic plastic tubes VS-8E2TX6-M 5 ntistatic plastic tubes VS-8E2TX6FP-E 5 ntistatic plastic tubes LINKS TO RELTED DOCUMENTS Dimensions Part marking information Packaging information TO-22C TO-22 FULL-PK TO-22C TO-22 FULL-PK For technical questions within your region, please contact one of the following: Document Number: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 8-ug-

7 Outline Dimensions Vishay High Power Products True 2 Pin TO-22 DIMENSIONS in millimeters and inches.2".5 mm Ø P E B F Q H D.5" REF. Term. 4 Ø 2. mm REF. 45 L b L b c 6 2 e J SYMBOL MILLIMETERS INCHES MIN. MX. MIN. MX b b c D E e 5.8 BSC.2 BSC F H J L L () Ø P Q Notes () Lead dimension and finish uncontrolled in L These dimensions are within allowable dimensions of JEDEC TO-22B rev. J outline dated Controling dimension: Inch Document Number: For technical questions concerning discrete products, contact: diodestech@vishay.com Revision: 2-Jan- For technical questions concerning module products, contact: indmodules@vishay.com

8 True 2 Pin TO-22 FULL-PK Outline Dimensions Vishay High Power Products DIMENSIONS in millimeters and inches Ø Q F E Q H D Q 2 θ L b L b e C J SYMBOL MILLIMETERS INCHES MIN. MX. MIN. MX b b C D E e 5.8 typical.2 typical F H J L L Ø Q Q Q θ 5 5 Document Number: 9526 For technical questions concerning discrete products, contact: diodestech@vishay.com Revision: 22-Jan- For technical questions concerning module products, contact: indmodules@vishay.com

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